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Features
· Metal silicon junction, majority carrier conduction
· High current capability, Low forward voltage drop DO-35(GLASS)
· Extremely low reverse current lR
· Ultra speed switching characteristics 0.075(1.9)
MAX.
· Small temperature coefficient of forward characteristics DIA. 1.083(27.5)
MIN.
· Satisfactory Wave detection efficiency
· For use in RECORDER, TV, RADIO, TELEPHONE as detectors,
super high speed switching circuits, small current rectifier 0.154(3.9)
MAX.
Value
Symbols Parameters Units
1N60 1N60P
VRRM Zenerepetitive Peak Reverse Voltage 40 45 Volts
TL Maximum Lead Temperature for soldering 10S at 4mm from Case 230 ℃
Electrical characteristics
Value
Symbols Parameters Test Conditions Units
Min Typ. Max.
1N60 0.32 0.5
IF=1mA
1N60P 0.24 0.5
VF Forward Voltage IF=30mA 1N60 0.65 1.0 Volts
IF=200mA 1N60P 0.65 1.0
1N60 0.1 0.5
lR Reverse Current VR=15V
1N60P 0.5 1.0
μA
VR=1V f=1MHz 1N60 2.0
CJ Junction Capacitance
VR=10V f=1MHz 1N60P 6.0
pF
IF(mA) IR(UA)
500 0.70
450
0.60
400
350 0.50
300
0.40
250
0.30
200
150 0.20
100
0.10
50
0 5 10 15 20 25 30 VR(V)
0 0.2 0.4 0.6 0.8 1.0 VF(V)
C(pF)
20
18
16 output
14 D.U.T.
12
CL RL
10
Input:3VRMS 10pF 3.8kW
8
0 1 2 3 4 5 6 VR(V)