Scribd
Upload
207 views8 pages

MEMS Processes in EE143 Lecture

This document discusses MEMS process technologies and covers the following key points in 3 sentences: The document is about Lecture 14 of the EE143 Microfabrication Technologies course which focuses on MEMS process technologies. It provides an overview of the ADXL-50 accelerometer chip and its differential capacitive sensing mechanism. Examples of MEMS structures that can be fabricated using the EE143 process including resonators, comb drives, and modularly integrated MEMS/CMOS devices are also presented.

Uploaded by

kareem hamed
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
207 views8 pages

MEMS Processes in EE143 Lecture

This document discusses MEMS process technologies and covers the following key points in 3 sentences: The document is about Lecture 14 of the EE143 Microfabrication Technologies course which focuses on MEMS process technologies. It provides an overview of the ADXL-50 accelerometer chip and its differential capacitive sensing mechanism. Examples of MEMS structures that can be fabricated using the EE143 process including resonators, comb drives, and modularly integrated MEMS/CMOS devices are also presented.

Uploaded by

kareem hamed
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

EE143  

– Fall  2016
Microfabrication  Technologies

Lecture  14:  MEMS  Process

Prof.  Ming  C.  Wu  


wu@eecs.berkeley.edu
511  Sutardja Dai  Hall  (SDH)

ADXL-­50  Chip  Diagram

M.  C.  Wu 2
2

1
ADXL  Sensors

http://www.analog.com/publications/magazines/Dialogue/
archives/30-­4/acccel.html

M.  C.  Wu 3
3

ADXL  Differential  Capacitive  Sensor

M.  C.  Wu 4
4

2
Differential  Capacitive  Sensing

x0 x0
C1 = C C2 = C
x0 + dx x0 - dx

For  small  displacement:


æ x0 x0 ö
C1 - C 2 = C çç - ÷÷
è x0 + dx x0 - dx ø
- 2 x dx 2
= C 2 0 2 » -C dx
x0 - dx x0
C1 + C2 » 2C

C1 dx
V0 = -VS + × 2VS V0 » - VS
C1 + C 2 x0
C1 - C 2 Output  voltage  is  linearly  
= VS
C1 + C 2 proportional  to  the  displacement

M.  C.  Wu 5
5

ADXL  Block  Diagram  – Open  Loop

Vamp V demo V OUT


d

time

M.  C.  Wu 6
6

3
Close-­Loop  Force-­Feedback  Accelerometers
-­-­ ADXL  50  Block  Diagram
• The  feedback  signal  is  fed  back  to  the  sensing  comb,  keeping  the  combs  
at  nearly  zero  displacement
• The  signal  =  the  voltage  required  to  keep  the  comb  at  zero  displacement

M.  C.  Wu 7
7

ADI’s  ADXL  Family  of  


Accelerometers

M.  C.  Wu 8
8

4
M.  C.  Wu 9
9

MEMS  Structures  in  EE  143  Process  

10

5
MEMS  Structures  in  EE  143  Process  

11

MEMS  Structures  in  EE  143  Process  

12

6
MEMS  Structures  in  EE  143  Process  

13

Si0.35Ge0.65-­MEMS/CMOS  Technology
Schematic  cross-­sectional  view  of  modularly  integrated  devices

• Conventional  CMOS  process  (Al  metallization)


• Structural  layer:  ~65%  Ge,  2.5  µm  thick
– deposited  by  LPCVD  at  450oC  (1µm/hr),  in-­situ  B  doped  (6  W/o)
– no  post-­dep.  anneal  (-­10  MPa  stress;;  ~10-­4/µm  strain  gradient)
• Sacrificial  layer:  100%  Ge,  2  µm  thick
– deposited  by  LPCVD  at  450oC  (~1  µm/hr)
– selectively  removed  using  H2O2 (80oC)  to  release  microstructures

T.-­J.  King-­Liu,  R.  Howe


14

7
Integrated  SiGe-­MEMS/CMOS

Resonator  next  to  Amplifier Resonator  on  top  of  Amplifier


• conventional  layout  of   • smaller  area  -­-­>  lower  cost
integrated  MEMS • reduced  interconnect  parasitics  
-­-­>  improved  performance

A. E. Franke et al., Solid-State Sensor and Actuator Workshop Technical Digest, pp. 18-21, June 2000

T.-­J.  King-­Liu,  R.  Howe


15

Si0.35Ge0.65 Resonator  Response

-­55 Q=70 150


Magnitude  (dB)

Tested  In  Air 100


Phase  (deg.)

-­65
50
-­75 0
-­50
-­85
-­100
-­95 -­150
16 18 20 22 24
Frequency  (kHz)
Q  =  14,000  at  40  µTorr
T.-­J.  King-­Liu,  R.  Howe
16

You might also like