Simulation Activity 3.

THE BIPOLAR JUNCTION TRANSISTOR FAMILIARIZATION AND CHARACTERISTICS

Course: ECE027 Section:

Instructor: Date Performed:

Date Submitted:

1. Objective(s):

The activity aims to give the basic theories, operations and characteristics of transistors.

2. Intended Learning Outcomes (ILOs):

The students shall be able to:

1) Familiarize with bipolar junction transistors

2) Analyze how a transistor is biased and consider transistor currents and their relationships

3) Observe the input (base) characteristic of a transistor; the relationship between the base current
and the base-emitter junction voltage.

4) Analyze the characteristics of BJT

5) Calculate h-parameters from the characteristics obtained.

3. Discussion:

The word “Transistor” is a contraction of “Current-Transferring Resistor”. This is an excellent description of

what a bipolar transistor does. Bipolar transistors have two P-N junctions connected together. This is done in either of
two ways: a P-type layer sandwiched between two N-type layers, or an N type layer between two P-type layers.
Bipolar transistors, like diodes, can be made from various semiconductor substances. Silicon is probably the most
common material used.
The P-type, or center, layer is called the base. The thinner of the N-type semiconductors is the
emitter, and the thicker is the collector. Sometimes these are labeled B, E, and C. The base current is
through the base-emitter junction because of the low impedance path to ground and, therefore, I C is zero.
When both junctions are forward-biased, the transistor is in the saturation region of its operation junction.
Ideally, when V CE exceeds 0.7 V, the base-collector junction becomes reverse-biased and the transistor
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goes into the active or linear region of its operation. When I B = 0, the transistor is in the cutoff region
although there is a very small collector leakage current.

Transistor Packages and dimensions in mm

(1) Input Characteristics: The input characteristics is obtained by plotting a curve between Ie and Vbe
keeping voltage Vcb or Vce constant. This is very similar to that of a forward-biased diode and the slope of
the plot at a given operating point gives information about its input dynamic resistance.

4. Procedure:

Activity 1. Input Characteristic curve

1. Connect the circuit in Multisim as shown in the Figure 1. You can locate the BJT 2N2222 as shown
in Fig. 2

2. Complete Table 1 by setting first Vcc to zero and varying Vbb gradually as stated on the said table
and then measure the voltage across resistor Rb (VRb) and the voltage across the base – emitter
terminals of the BJT for each values of Vbb. And from the measured VRb, calculate Ib using Ohm’s
law.

3. Repeat above procedure (step 3) for Vcc = 6V and Vcc = 12V

4. After completing Table 1, plot input current Ib vs input voltage Vbe for different values of Vce.

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Figure 1. Input Characteristics of Bipolar Junction Transistor (BJT)

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Figure 2

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Table 1. Input Characteristic curve of BJT

Vcc = 0V Vcc = 6V Vcc = 12V

Vbb
Vrb Ib Vbe Vrb Ib Vbe Vrb Ib Vbe

1V 447.874 44.779 552.126 325.274 32.527 674.726 321.566 32.157 678.434

mV uA mV mV uA mV mV uA mV

2V 1.41V 141 uA 590.424 1.324V 132.4 676.056 1.305V 130.5 695.289

mV uA mV uA mV

3V 2.393V 239.3 606.713 2.323V 232.3 677.057 2.304V 230.4 695.836

uA mV uA mV uA mV

4V 3.383V 338.3 617.151 3.322V 332.2 678.039 3.304V 330.4 696.373

uA mV uA mV uA mV

5V 4.375V 437.5 624.846 4.321V 432.1 679.008 4.303V 430.3 696.91m

uA mV uA mV uA V

6V 5.369V 536.9 630.946 5.32V 532 uA 679.963 5.303V 530.3 697.448

uA mV mV uA mV

7V 6.364V 636.4 636.001 6.319V 631.9 680.904 6.302V 630.2 697.986

mV uA mV uA mV
uA

8V 7.36V 736 uA 640.319 7.318V 731.8 681.829 7.301V 730.1 698.523

mV uA mV uA mV

9V 8.356V 835.6 644.088 8.317V 831.7 682.736 8.301V 830.1 699.057

uA mV uA mV uA mV

10V 9.353V 935.3 647.432 9.316V 931.6 683.627 9.3V 930 uA 699.569
uA mV uA mV mV

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Activity 2 Output Characteristic curve

1. Connect the circuit as shown in the Figure 3.

2. Set Vbb = 2V then measure the voltage across Rb. Calculate the current Ib with measured voltage
across Rb. Record the value of Ib at Table 3.

3. Complete Table 2 by varying Vcc gradually as stated on the said table and then measure the
voltage across resistor Rc (VRc) and the voltage across the collector – emitter terminals of the BJT
for each values of Vcc. And from the measured VRc, calculate Ic.

4. Repeat above procedure (step 3) for Vbb = 4V and Vbb = 6V

5. After completing Table 2, plot output current Ic vs output voltage Vce for different values of Ib.

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Figure 3.Output Characteristics of Bipolar Junction Transistor (BJT)

Table 3. Output Characteristic curve of BJT

Vbb = 2V; Ib = 13.45uA Vbb = 4V; Ib = 33.21uA Vbb = 6V; Ib = 53.16uA

Vcc
Vrc Ic Vce Vrc Ic Vce Vrc Ic Vce

1V 277.801 2.78mA 722.199 677.15 6.77mA 322.84 809.97 8.10mA 190.03

mV mV 1mV 9mV mV mV

2V 280.526 2.81mA 1.719V 689.00 6.89mA 1.311V 1.091V 10.91m 908.57

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mV 2mV A 6mV

3V 283.25 2.83mA 2.717V 695.70 6.96mA 2.304V 1.102V 11.02m 1.898V

mV 1mV A

4V 285.975 2.86mA 3.714V 702.4m 7.02mA 3.298V 1.113V 11.13m 2.887V

mV V A

5V 288.7mV 2.89mA 4.711V 709.09 7.09mA 4.291V 1.123V 11.23m 3.877V

9mV A

6V 291.424 2.91mA 5.709V 715.79 7.16mA 5.284V 1.134V 11.34m 4.866V

mV 8mV A

7V 294.149 2.94mA 6.706V 722.49 7.22mA 6.278V 1.145V 11.45m 5.855V

mV 7mV A

8V 296.873 2.97mA 7.703V 729.19 7.29mA 7.271V 1.155V 11.55m 6.845V

mV 6mV A

9V 299.598 3mA 8.7V 735.89 7.36mA 8.264V 1.166V 11.66m 7.834V

mV 5mV A

10V 302.322 3.02mA 9.698V 742.59 7.43mA 9.257V 1.176V 11.76m 8.824V
mV 3mV A

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5. Conclusion:

6. Assessment Task:

1) What is the primary function of a bipolar junction transistor? Briefly discuss you answer.

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