NORTH SOUTH UNIVERSITY

DEPARTMENT OF ELECTRICAL & COMPUTER ENGINEERING

LAB REPORT
Summer 2021

COURSE NAME: Analog Electronics Lab

COURSE CODE: EEE/ETE 111 L
SECTION: 09
COURSE INSTRUCTOR: Tasmina Imam
EXPERIMENT NO: 06
EXPERIMENT NAME:

The Input-Output characteristics of CE (common emitter) configuration of BJT

EXPERIMENT DATE: 11th August 2021

DATE OF SUBMISSION: 17th August 2021
GROUP NUMBER: 07
SUBMITTED TO: Tasmina Imam

SUBMITTED BY STUDENT ID SCORE

1.Mohammad Iftekhar Bin Ashraf 2013199645
2. Nuzhath Tabassum Orpaa 1931052042
3. Ahanaf Tahomid 1831920642
4. Md. Mehraj Hossain Sani (writer) 2013623043
5. Md Kamran Ahmed 2012356643
Objectives:
 Study of the input-output characteristics of CE (common emitter) configuration of BJT

Theory:
BJT is the short form of Bipolar Junction Transistor, it is a solid-state current-controlled device which can
be used to electronically switch a circuit, you can think of it as your normal Fan or Light switch, but
instead of you turning it on manually it can be controlled electronically. Technically speaking, BJT is a
three-terminal device with an Emitter, collector, and a base pin, the current flow through the emitter and
collector are controlled by the amount of current applied to the base. The BJT is formed by three layers of
semiconductor materials, if it is a PNP transistor, it will have two P-type regions and one N-type region,
likewise, if it is an NPN transistor, it will have two N-type regions and one P-type region .Figure 5.1
shows the biased NPN transistor.

Figure 5.1: Biasing of an NPN transistor.

If the VBB is greater than the barrier potential, emitter electron will enter base region. The free electron
can flow either into the base or into the collector. As base lightly doped and thin, most of the free electron
will enter into the collector. There are three different current in a transistor. They are emitter current (IE),
collector current (IC) and the base current (IB) are shows in figure 5.2.

Figure 5.2: Different current in transistor.

Here, Ie = Ic + lb and current gain, β = IC / IB

The characteristics of a transistor is measured by two characteristics curve :

a) Input characteristics curve.
b) Output characteristics curve.
Input Characteristics Curve:
Input characteristics is defined as the set of curves between input current (IB) vs. input voltage (VBE) for
the constant output voltage (VCE). It is the same curve that is found for a forward biased diode.
Output Characteristics Curve:
Output characteristics is defined by the set of curves between output current (IC) vs. output voltage (VCE)
for the constant input current (IB). The curve has the following features:

 It has three regions namely Saturation, Active and Cutoff region.

 The rising part of the curve, where VCE is between 0 and approximately 1 volt is called saturation
region. In this region, the collector diode is not reversed biased.
 When the base current is zero, but there is some collector current. This region of the transistor
curve is known as the cutoff region. The small collector current is called collector cutoff current.
 Under Common Emitter configuration, The variation of collector current(IC) with Collector-
Emitter voltage (VCE), keeping the base current(IB) constant.

Figure 5.3: (a) Input Characteristic, (b) Output Characteristic of NPN transistor.

Equipment and Components:

Serial Component Details Specification Quantity

no.

1. Transistor 2N2222 1 piece

2. Resistor 100Ω, 1kΩ 1 piece each

3. POT 10 kΩ 1 piece

4. Trainer Board 1 unit

5. DC Power Supply 1 unit

6. Digital Multimeter 1 unit

7. Chords and wire as required

Experimental Setup:
 Figure 5.1: Biasing of an NPN transistor

Data and Table:

Table 1: Input Characteristics of BJT

For VCC=1.32, we get VCE=1.005V

For VCC=5.49, we get VCE= 5V

=1V = 5V

(Volts) (Volts)
(Volts) (Volts) (Volts) (Volts)
(μA)
(μA)
0.1 99.499 mV 501.201uV 4.912 nA 0.1 99.503mV 497.169mV 4.872nA
0.2 198.216mV 1.784 mV 17.646 nA 0.2 198.22mV 1.78mV 17.606nA
0.3 295mV 5 mV 49.716 nA 0.3 295.003mV 4.997mV 49.679nA
0.4 387.36 mV 12.639 mV 126.022 nA 0.4 387.364mV 12.636mV 125.987nA
0.5 470.657mV 29.343mV 292.988 nA 0.5 470.66mV 29.34mV 292.955nA
0.6 534.582mV 65.418 mV 653.722 nA 0.6 534.583mV 65.417mV 653.69nA
0.7 569.728mV 130.272 mV 1.302 uA 0.7 569.731mV 130.269mV 1.302 uA
0.8 588.136 mV 211.864 mV 2.118 uA 0.8 588.144mV 211.856mV 2.118uA
0.9 599.603 mV 300.397 mV 3.004 uA 0.9 599.616mV 300.384mV 3.004uA
1.0 607.724 mV 392.276 mV 3.923 uA 1.0 607.742mV 392.258mV 3.922uA
1.2 618.969 mV 581.031 mV 5.81 uA 1.2 618.999mV 581.001mV 5.81uA
1.4 626.766mV 773.234mV 7.732 uA 1.4 626.807mV 773.193mV 7.732uA
1.6 632.71mV 967.29 mV 9.673 uA 1.6 632.761mV 967.239mV 9.673uA
1.8 637.497mV 1.163V 11.626 uA 1.8 637.564mV 1.162V 11.625uA
2.0 640.825 mV 1.359V 13.593 uA 2.0 641.586mV 1.358V 13.585uA
4.0 643.82mV 3.356V 33.565 uA 4.0 664.209mV 3.336V 33.361uA
6.0 644.799mV 5.355V 53.557 uA 6.0 675.786mV 5.324V 53.247uA
8.0 645.59 mV 7.354V 73.551 uA 8.0 679.66mV 7.32V 73.21uA
10.0 646.3 mV 9.354V 93.546 uA 10.0 680.153mV 9.32V 93.207uA
12.0 646.963mV 11.535V 113.541 uA 12.0 680.532mV 11.319V 113.205uA
 Table 2: Output Characteristics of BJT

For VBB=1.525V, we get IB=10.002 uA

For VBB=5.57V, we get IB=50.02 uA

= 10 μA = 50 μA
(Volts)
(Volts) (Volts) (Volts)
(Volts)
(mA) (mA)
0.1 51.298 mV 48.702 mV 48.702 uA 24.289mV 75.7114mV 75.7114uA
0.2 74.983 mV 125.017 mV 125.017 uA 37.25mV 162.75 mV 162.75 uA
0.3 90.972 mV 209.128 mV 209.128 uA 46.304mV 253.696mV 253.696 uA
0.4 103.924 mV 296.076 mV 296.076 uA 53.306mV 346.694mV 346.694 uA
0.5 116.105 mV 383.895 mV 383.895 uA 59.061mV 440.94 mV 440.94 uA
0.6 128.723 mV 471.277 mV 471.277 uA 63.984mV 536.017mV 536.017 uA
0.7 143.318 mV 556.682 mV 556.682 uA 68.318mV 631.682mV 631.682 uA
0.8 162.932 mV 637.068 mV 637.068 uA 72.216mV 727.784mV 727.784 uA
0.9 196.473 mV 703.527 mV 703.527 uA 75.781mV 824.219mV 824.219 uA
1.0 263.573 mV 736.428 mV 736.428 uA 79.085mV 920.915mV 920.915 uA
1.2 440.783 mV 759.218 mV 759.218 uA 85.109mV 1.115V 1.115mA
1.5 709.524 mV 790.476 mV 790.476 uA 93.171mV 1.407 V 1.407 mA
2.0 1.157 V 842.566 mV 842.566 uA 105.283 mV 1.895 V 1.895 mA
2.5 1.605 V 894.656 mV 894.656 uA 117.014 mV 2.383V 2.383 mA
3.0 2.053 V 946.746 mV 946.746 uA 129.602 mV 2.87V 2.87 mA
5.0 3.845 V 1.155 V 1.155 mA 512.266 mV 3.488V 3.488 mA
10.0 8.324 V 1.676 V 1.676 mA 3.439 V 6.561V 6.561 mA
15.0 12.803 V 2.197 V 2.197 mA 6.367V 8.633V 8.633 mA
20.0 17.282 V 2.717 V 2.717 mA 9.294V 10.706V 10.706 mA

Graph:
Figure 5.4: Input characteristic graph (IB vs VBE) of NPN transistor when VCE = 1V, 5V.

Saturation Region Cut-off region

Figure 5.5: Output characteristic graph (IC vs VCE) of NPN transistor when IB = 10 uA, 50 uA.
Result analysis and Discussion:
In this experiment, our main goal was to determine the input-output characteristics of CE (common
emitter) configuration of BJT. At the time of input curve we have measured VRB, VBE and IB for the
different value of VBB. We have done this twice once when VCE was 1V and once when VCE was 5V. We
have drawn an IB vs VBE curve from these data which is our input curve. At the time of output curve we
have measured VRC, VCE and IC for the different value of VCC. We have also done this twice once when IB
was 10 uA and once when IB was 50 uA. We have drawn an IC vs VCE curve from these data which is our
output curve. As we have done this experiment in Multisim those values were almost accurate for which
we can say that %error was close to 0. This is how we have done this experiment successfully.

Question/Answer:
1. Plot IB vs VBE for different values of VCE .
Ans:

Figure 5.4: Input characteristic graph (IB vs VBE) of NPN transistor when VCE = 1V, 5V.
2. Plot IC vs VCE for different values of IB. Show different region operations.
Ans:

Saturation Region Cut-off region

Figure 5.5: Output characteristic graph (IC vs VCE) of NPN transistor when IB = 10 uA, 50 uA.

3. Find β for each IB [for active region only]

Ans:
4. For VCC =15 V, draw load line and write the coordinates of the Q-point.
Ans:
5. Which region of operation does your Q-point cut?
Ans: Q-point Cuts the curve at active region of operations.

6. Explain whether your transistor performed as an amplifier or not.

Ans: The transistor performed as an amplifier as the Q-point of the biased point is within the active
region of the transistor.
Contributions:
Name STUDENT ID Contribution
1.Mohammad Iftekhar Bin Ashraf (writer) 2013199645 Cover page, Theory, Components,
Question/Answer, Discussion and Result
Analysis.
2. Nuzhath Tabassum Orpaa 1931052042 Question/Answer, Discussion and Result
Analysis.
3. Ahanaf Tahomid 1831920642 No Contribution
4. Md. Mehraj Hossain Sani 2013623043 Question/Answer, Graph, Experimental
set up, Data, Attachment.
5. Md Kamran Ahmed 2012356643 No Contribution

Attachment: Class Assignment.

Table 1: Input Characteristics of BJT

For VCC=1.32, we get VCE=1.005V

For VCC=5.49, we get VCE= 5V

=1V = 5V

(Volts) (Volts)
(Volts) (Volts) (Volts) (Volts)
(μA)
(μA)
0.1 99.499 mV 501.201uV 4.912 nA 0.1 99.503mV 497.169mV 4.872nA
0.2 198.216mV 1.784 mV 17.646 nA 0.2 198.22mV 1.78mV 17.606nA
0.3 295mV 5 mV 49.716 nA 0.3 295.003mV 4.997mV 49.679nA
0.4 387.36 mV 12.639 mV 126.022 nA 0.4 387.364mV 12.636mV 125.987nA
0.5 470.657mV 29.343mV 292.988 nA 0.5 470.66mV 29.34mV 292.955nA
0.6 534.582mV 65.418 mV 653.722 nA 0.6 534.583mV 65.417mV 653.69nA
0.7 569.728mV 130.272 mV 1.302 uA 0.7 569.731mV 130.269mV 1.302 uA
0.8 588.136 mV 211.864 mV 2.118 uA 0.8 588.144mV 211.856mV 2.118uA
0.9 599.603 mV 300.397 mV 3.004 uA 0.9 599.616mV 300.384mV 3.004uA
1.0 607.724 mV 392.276 mV 3.923 uA 1.0 607.742mV 392.258mV 3.922uA
1.2 618.969 mV 581.031 mV 5.81 uA 1.2 18.999mV 581.001mV 5.81uA
1.4 626.766mV 773.234mV 7.732 uA 1.4 626.807mV 773.193mV 7.732uA
1.6 632.71mV 967.29 mV 9.673 uA 1.6 632.761mV 967.239mV 9.673uA
1.8 637.497mV 1.163V 11.626 uA 1.8 637.564mV 1.162V 11.625uA
2.0 640.825 mV 1.359V 13.593 uA 2.0 641.586mV 1.358V 13.585uA
4.0 643.82mV 3.356V 33.565 uA 4.0 664.209mV 3.336V 33.361uA
6.0 644.799mV 5.355V 53.557 uA 6.0 675.786mV 5.324V 53.247uA
8.0 645.59 mV 7.354V 73.551 uA 8.0 679.66mV 7.32V 73.21uA
10.0 646.3 mV 9.354V 93.546 uA 10.0 680.153mV 9.32V 93.207uA
12.0 646.963mV 11.535V 113.541 uA 12.0 680.532mV 11.319V 113.205uA
 Table 2: Output Characteristics of BJT

For VBB=1.525V, we get IB=10.002 uA

For VBB=5.57V, we get IB=50.02 uA

= 10 μA = 50 μA
(Volts)
(Volts) (Volts) (Volts)
(Volts)
(mA) (mA)
0.1 51.298 mV 48.702 mV 48.702 uA 24.289mV 75.7114mV 75.7114uA
0.2 74.983 mV 125.017 mV 125.017 uA 37.25mV 162.75 mV 162.75 uA
0.3 90.972 mV 209.128 mV 209.128 uA 46.304mV 253.696mV 253.696 uA
0.4 103.924 mV 296.076 mV 296.076 uA 53.306mV 346.694mV 346.694 uA
0.5 116.105 mV 383.895 mV 383.895 uA 59.061mV 440.94 mV 440.94 uA
0.6 128.723 mV 471.277 mV 471.277 uA 63.984mV 536.017mV 536.017 uA
0.7 143.318 mV 556.682 mV 556.682 uA 68.318mV 631.682mV 631.682 uA
0.8 162.932 mV 637.068 mV 637.068 uA 72.216mV 727.784mV 727.784 uA
0.9 196.473 mV 703.527 mV 703.527 uA 75.781mV 824.219mV 824.219 uA
1.0 263.573 mV 736.428 mV 736.428 uA 79.085mV 920.915mV 920.915 uA
1.2 440.783 mV 759.218 mV 759.218 uA 85.109mV 1.115V 1.115mA
1.5 709.524 mV 790.476 mV 790.476 uA 93.171mV 1.407 V 1.407 mA
2.0 1.157 V 842.566 mV 842.566 uA 105.283 mV 1.895 V 1.895 mA
2.5 1.605 V 894.656 mV 894.656 uA 117.014 mV 2.383V 2.383 mA
3.0 2.053 V 946.746 mV 946.746 uA 129.602 mV 2.87V 2.87 mA
5.0 3.845 V 1.55 V 1.55 mA 512.266 mV 3.488V 3.488 mA
10.0 8.324 V 1.676 V 1.676 mA 3.439 V 6.561V 6.561 mA
15.0 12.803 V 2.197 V 2.197 mA 6.367V 8.633V 8.633 mA
20.0 17.282 V 2.717 V 2.717 mA 9.294V 10.706V 10.706 mA
Figure-01: Screenshots of the simulated circuits during taking data for table 01
Figure-02: Screenshots of the simulated circuits during taking data for table 02