K. J.
Somaiya College of Engineering, Mumbai-77
(A Constituent College of Somaiya Vidyavihar University)
Department of Electronic and Computer Engineering
Course Name: Analog Electronics Circuits Semester: III
Date of Performance: Batch No: A1
Student Name: MRUNAL BAPARDEKAR Roll No: 16014022006
Faculty Sign & Date: Grade/Marks: /25
Experiment No: 6
Title: Study of CB and CC BJT characteristics (Spice simulation)
Aim and Objective of the Experiment: Study of BJT Characteristics
Study of CB and CC characteristics of npn BJT
COs to be achieved:
CO1: Analyze BJT transistor circuits for DC and AC operations
Theory:
Transistors are three terminal active devices made from different semiconductor materials that can act
as either an insulator or a conductor by the application of a small signal voltage. The transistor’s ability
to change between these two states enables it to have two basic functions: “switching” (digital
electronics) or “amplification” (analogue electronics). Then bipolar transistors have the ability to
operate within three different regions:
1. Active Region: the transistor operates as an amplifier and IC = β*IC
2. Saturation Region: the transistor is “Fully-ON” operating as a switch and IC = IC(saturation)
3. Cut-off Region: the transistor is “Fully-OFF” operating as a switch and IC = 0
BJT Working Principle:
The NPN transistor is a biased active region. Here, the base-emitter junction is forward biased and
the collector-base junction is reversed biased. So, the width of the depletion region of the base-
emitter junction is small, while compared to the width of the collector-base junction. The forward
biased BE junction will reduce the barrier potential and help the current to flow from the emitter to
the base.
Usually, the base of NPN transistors is thin and lightly doped, so it has fewer holes while compared
with the electrons in the emitter. The recombination of holes in the base with electrons in the emitter
region will constitute the flow of the base current. Usually, the direction of conventional current
flow will remain opposed to the flow of electrons. Then the remaining large number of electrons in
the emitter will cross the reverse-biased collector junction in the form of collector current. According
to Kirchhoff's Current Law, the emitter current is equal to the sum of collector current and base
AEC Semester: III Academic Year: 2023-24
K. J. Somaiya College of Engineering, Mumbai-77
(A Constituent College of Somaiya Vidyavihar University)
Department of Electronic and Computer Engineering
current. Generally, the base current IB will remain small when compared to the emitter current IE and
the collector current IC
IE = IC + IB
The only major difference between the NPN and PNP transistors are their majority charge carriers.
The majority charge carriers of NPN transistors are electrons and the majority charge carriers of PNP
transistors are holes. All other working principles and their doping ratio will remain the same for
both NPN and PNP transistors.
In the transistor, if the collector current increases, then the collector junction temperature will
increase. So, the resistance provided by the collector also gets reduced. As a result the collector
current increases. This phenomenon is known as the thermal runway in BJT transistors.
Circuit Diagram:
NPN Common Base BJT circuit
NOTE: VEE is negative for BE junction to be in forward biased
NPN Common collector BJT circuit
AEC Semester: III Academic Year: 2023-24
K. J. Somaiya College of Engineering, Mumbai-77
(A Constituent College of Somaiya Vidyavihar University)
Department of Electronic and Computer Engineering
Stepwise-Procedure:
1. Open a new Schematic and create it as per above circuit diagram.
2. Note down the parameters as per the observation table.
3. Record input and output characteristics for CB & CC configuration. Take npn BJT as BC547B
a) Plot input characteristic VBE Vs IE by dc analysis, vary VEE from 0V to 2V in steps of
0.1Volts and vary VCC from 5V to 15V in steps of 5V (CB configuration)
b) Plot output characteristic VCB Vs IC by dc analysis, vary VCC from 0V to 10V in steps of
0.1Volts and vary VEE from 0 to 2V in steps of 0.5V (CB configuration)
c) Plot input characteristic VCB Vs IB by dc analysis, vary VBB from 0V to 2V in steps of
0.1Volts and vary VEE from 6.5V to 6.8V in steps of 0.3V (CC configuration)
d) Plot output characteristic VCE Vs IE by dc analysis, vary VEE from 0V to 10V in steps of
0.1Volts and vary VBB from 0.5V to 2V in steps of 0.5V (CC configuration)
Observation Table:
1. CB input characteristics
(Keeping VCC constant means we are keeping VCB constant since, VB = 0, VCB = VC and VC =
VCC – IC RC)
VCC = 5V VCC = 10V VCC = 15V
VEE VBE (V) IE (mA) VBE (V) IE (mA) VBE (V) IE (mA)
0 0 0 0 0 0 0
100mV 0.1 1.04823e-13 0.1 1.04823e-13 0.1 1.04823e-13
200mV 0.2 4.30403e-13 0.2 4.30403e-13 0.2 4.30403e-13
300mV 0.3 1.13046e-11 0.3 1.13046e-11 0.3 1.13046e-11
500mV 0.49 2.50803e-08 0.49 2.50803e-08 0.49 2.50803e-08
600mV 0.59 1.14702e-06 0.59 1.14702e-06 0.59 1.14702e-06
800mV 0.71 8.86874e-05 0.71 8.86874e-05 0.71 8.86874e-05
1V 0.73 0.00026079 0.73 0.00026079 0.73 0.00026079
2V 0.77 0.00122086 0.77 0.00122086 0.77 0.00122086
AEC Semester: III Academic Year: 2023-24
K. J. Somaiya College of Engineering, Mumbai-77
(A Constituent College of Somaiya Vidyavihar University)
Department of Electronic and Computer Engineering
2. CB output characteristics
(Keeping VEE constant means we are keeping IE constant since, VB = 0, VE = IE RE, as VEE and RE
are fixed, IE is fixed)
VEE = 0V VEE = 1V VEE = 2V
VCC VCB (V) IC (mA) VCB (V) IC (mA) VCB (V) IC (mA)
0 0 0 0 0 0 0
100mV 0.1 1.00196e-13 -0.258206 0.000258208 -0.753195 0.000753195
300mV 0.3 3.002e-13 -0.158208 0.000258208 -0.747211 0.000847204
500mV 0.5 5.002e-13 0.0417925 0.000258208 -0.72923 0.00102909
1V 1 1.0002e-12 0.241792 0.000258208 -0.680949 0.00118088
3V 3 3.0002e-12 0.741792 0.000258208 -0.208777 0.00120878
5V 5 5.0002e-12 2.74179 0.000258208 1.79122 0.00120878
8V 8 8.0002e-12 4.74179 0.000258208 3.79122 0.00120878
10V 10 1.00002e-11 7.74179 0.000258208 6.79122 0.00120878
9.74179 0.000258208 8.79122 0.00120878
3. CC input characteristics
(Keeping VEE constant means we are keeping VCE constant since, VC = 0, VCE = -VE )
VEE = 6.5V VEE = 6.8V
VBB VCB (V) IB (µA) VCB (V) IB (µA)
100mV 2.78476 2.88477e-05 2.93336 3.03337e-05
200mV 2.73428 2.9343e-05 2.8829 3.08292e-05
300mV 2.68381 2.98384e-05 2.83244 3.13247e-05
500mV 2.58286 3.08291e-05 2.73152 3.23156e-05
600mV 2.53242 3.13246e-05 2.68108 3.28112e-05
800mV 2.43155 3.23157e-05 2.58022 3.38024e-05
1V 2.33067 3.33067e-05 2.47936 3.47936e-05
2V 1.8264 3.8264e-05 1.97516 3.97516e-05
AEC Semester: III Academic Year: 2023-24
K. J. Somaiya College of Engineering, Mumbai-77
(A Constituent College of Somaiya Vidyavihar University)
Department of Electronic and Computer Engineering
4. CC output characteristics
(Keeping VBB constant means we are keeping IB constant)
VBB = 0V VBB = 1V VBB = 2V
VEE VCE (V) IE (mA) VCE (V) IE (mA) VCE (V) IE (mA)
0 0 0 -3.21129e-05 3.21129e-08 -8.73457e-05 8.73457e-08
100mV 0.1 1.04723e-13 0.0637223 3.62829e-05 0.0435707 5.64345e-05
300mV 0.3 1.13045e-11 0.116643 0.000183427 0.0784215 0.000221594
500mV 0.490 2.50562e-08 0.158595 0.000341405 0.0976086 0.000402455
1V 0.86 0.000139203 0.377785 0.000622215 0.133246 0.000866752
3V 1.88 0.00111711 1.38519 0.00161481 0.886202 0.0021138
5V 2.88 00.0021138 2.38647 0.00261353 1.88626 0.00311374
8V 4.38 0.00361429 3.88491 0.00411509 3.38392 0.00461608
10V 5.38 0.00461608 4.88277 0.00511723 4.38149 0.00561851
Calculation:
Show here calculations of values of Rin and Rout which are obtained from various characteristics. Do
handwritten calculations on a blank page and upload images of those pages here.
AEC Semester: III Academic Year: 2023-24
K. J. Somaiya College of Engineering, Mumbai-77
(A Constituent College of Somaiya Vidyavihar University)
Department of Electronic and Computer Engineering
Waveform
CB Input characteristics:
Circuit:
MEAS STATEMENT:
IE vs VBE graph:
AEC Semester: III Academic Year: 2023-24
K. J. Somaiya College of Engineering, Mumbai-77
(A Constituent College of Somaiya Vidyavihar University)
Department of Electronic and Computer Engineering
FOR VCC AT 5V:
VCC AT 10V:
AEC Semester: III Academic Year: 2023-24
K. J. Somaiya College of Engineering, Mumbai-77
(A Constituent College of Somaiya Vidyavihar University)
Department of Electronic and Computer Engineering
VCC AT 15V:
AEC Semester: III Academic Year: 2023-24
K. J. Somaiya College of Engineering, Mumbai-77
(A Constituent College of Somaiya Vidyavihar University)
Department of Electronic and Computer Engineering
CB Output Characteristic
Schematic:
MEAS ST:
AEC Semester: III Academic Year: 2023-24
K. J. Somaiya College of Engineering, Mumbai-77
(A Constituent College of Somaiya Vidyavihar University)
Department of Electronic and Computer Engineering
IC vs VCB graph (VEE varies, family of curves) –
FOR VEE AT 0V:
AEC Semester: III Academic Year: 2023-24
K. J. Somaiya College of Engineering, Mumbai-77
(A Constituent College of Somaiya Vidyavihar University)
Department of Electronic and Computer Engineering
WHEN VEE=1V:
AEC Semester: III Academic Year: 2023-24
K. J. Somaiya College of Engineering, Mumbai-77
(A Constituent College of Somaiya Vidyavihar University)
Department of Electronic and Computer Engineering
WHEN VEE=2V:
AEC Semester: III Academic Year: 2023-24
K. J. Somaiya College of Engineering, Mumbai-77
(A Constituent College of Somaiya Vidyavihar University)
Department of Electronic and Computer Engineering
CC input characteristics:
AEC Semester: III Academic Year: 2023-24
K. J. Somaiya College of Engineering, Mumbai-77
(A Constituent College of Somaiya Vidyavihar University)
Department of Electronic and Computer Engineering
IB vs VCB graph –
AEC Semester: III Academic Year: 2023-24
K. J. Somaiya College of Engineering, Mumbai-77
(A Constituent College of Somaiya Vidyavihar University)
Department of Electronic and Computer Engineering
For VEE=6.5V
IB vs VCB graph
AEC Semester: III Academic Year: 2023-24
K. J. Somaiya College of Engineering, Mumbai-77
(A Constituent College of Somaiya Vidyavihar University)
Department of Electronic and Computer Engineering
FOR VEE=6.8V
AEC Semester: III Academic Year: 2023-24
K. J. Somaiya College of Engineering, Mumbai-77
(A Constituent College of Somaiya Vidyavihar University)
Department of Electronic and Computer Engineering
CC output characteristics
(Keeping VBB constant means we are keeping IB constant)
SCHEMATIC:
.MEAS STATEMNET:
AEC Semester: III Academic Year: 2023-24
K. J. Somaiya College of Engineering, Mumbai-77
(A Constituent College of Somaiya Vidyavihar University)
Department of Electronic and Computer Engineering
GRAPH IE VS VCE:
WHEN VBB=0V
AEC Semester: III Academic Year: 2023-24
K. J. Somaiya College of Engineering, Mumbai-77
(A Constituent College of Somaiya Vidyavihar University)
Department of Electronic and Computer Engineering
WHEN VBB=1V:
AEC Semester: III Academic Year: 2023-24
K. J. Somaiya College of Engineering, Mumbai-77
(A Constituent College of Somaiya Vidyavihar University)
Department of Electronic and Computer Engineering
WHEN VBB=2V:
AEC Semester: III Academic Year: 2023-24
K. J. Somaiya College of Engineering, Mumbai-77
(A Constituent College of Somaiya Vidyavihar University)
Department of Electronic and Computer Engineering
Post Lab Subjective/Objective type Questions: (hand written)
1. Comparison of CB, CC, CE characteristics of BJT
AEC Semester: III Academic Year: 2023-24
K. J. Somaiya College of Engineering, Mumbai-77
(A Constituent College of Somaiya Vidyavihar University)
Department of Electronic and Computer Engineering
AEC Semester: III Academic Year: 2023-24
K. J. Somaiya College of Engineering, Mumbai-77
(A Constituent College of Somaiya Vidyavihar University)
Department of Electronic and Computer Engineering
2. Comparison of NPN and PNP Bipolar junction transistor
Conclusion: (to be written in own words)
Analyzed BJT transistor circuits for DC and AC operations using LT spice.
Signature of faculty in-charge with Date:
AEC Semester: III Academic Year: 2023-24
K. J. Somaiya College of Engineering, Mumbai-77
(A Constituent College of Somaiya Vidyavihar University)
Department of Electronic and Computer Engineering
AEC Semester: III Academic Year: 2023-24
