Lab Assignment 9

Student Name: Wajahat Murtaza - FA19-EPE-125

Saifullah Khan - FA19-EPE-101
Uzair Sharif - FA19-EPE-124

Registration Number: FA19-EPE-125

Class/Section: EPE-3C
Semester: Third

Lab Engineer Name: Miss Madiha Naeem

Corse Teacher Name: Dr. Ahmed Fayyaz
Submission Date: 8 Dec 2020

Marks:

A P C
LAB 9-
Input and Output Characteristics of Common Base Configuration:
 Relation between input voltage, (VBE)and input current (IE) taking VCB as a parameter
in common base configuration.
 Relation between output voltage, (VCB) and output current (IC) taking IE as a parameter
in common base configuration

Apparatus:
1. Two variable DC Power supplies

2. Bipolar Junction Transistor (NPN)

3. Ammeter

4. Volt meter

5. Capacitor

6. Resistors

7. Connecting wires

Procedure:
For input characteristics of common base, the base emitter is forward biased and the base collector
junction is reverse biased. For input characteristics the emitter Current (IE) and base emitter
Voltage (VBE) are variables and VCB is a parameter. Graphical relation between IE and VBE are
similar of diode except VCB, will effect on IE and VBE. More the value of VCB more will be the
emitter current (IE) because more the value of collector to base Voltage, more will be the minority
carriers across the junction for fix value of base emitter Voltage. The emitter current varies with
variation of base to emitter voltage (VBE) for fix value of collector to Base Voltage (VCB).
For output characteristics of common base, the emitter Current (IE) is taken as a parameter, base
Collector voltage (VCB) and output Collector current are variables. For fix value of Emitter
current, the Collector current increases the ratio of IC/IE must also be increases by increase of
VCB. The ratio of IC/IE is called α here α is not fix its values lies between 0-1 When VCB become
negative the transistor is saturated because both junctions are forwarded biased. Connect the
circuit as shown in the circuit diagram above. Measure the emitter current for different value of
base to emitter voltages for fix value of VCB.
Circuit Diagram:

Observation 1:

For VCB = 0V
For VCB = 5V

For VCB = 10V

 For VCB = 0V For VCB = 5V

S. No VBE IE S. No VBE IE

1. 0.1V 0.1V 0.0mA 1. 0.1V 0.1V 0.0mA

2. 0.3V 0.3V 0.0mA 2. 0.3V 0.3V 0.0mA

3. 0.5V 0.49V 0.0mA 3. 0.5V 0.496V 0.0mA

4. 0.7V 0.58V 0.12mA 4. 0.7V 0.582V 0.12mA

5. 0.9V 0.64V 0.29mA 5. 0.9V 0.606V 0.29mA

6. 1.5V 0.69V 0.80mA 6. 1.5V 0.635V 0.87mA

7. 2.5V 0.72V 1.77mA 7. 2.5V 0.689V 1.81mA

For VCB = 10V

S. No VBE IE

1. 0.1V 0.1 0.0

2. 0.3V 0.3 0.0

3. 0.5V 0.496 0.0

4. 0.7V 0.58 0.12

5. 0.9V 0.604 0.30

6. 1.5V 0.633 0.87

7. 2.5V 0.655 1.85

Graph:

1.5

1
V(CB)=0V
V(CB)=5V
V(CB)=10V
0.5

0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

-0.5

Observation 2:

For IE = 1mA
 For IE = 2mA

For IE = 3mA
 For IE = 4mA

For IE = 1mA For IE = 2mA

S. No VCB IC S. No VCB IC

1. 0V 0.68 0.68 1. 0V 0.72 0.72

2. 1V 0.0 1 2. 1V 0.68 1.68

3. 2V 1 1 3. 2V 0.0 1.99

4. 3V 2 1 4. 3V 1.01 1.99

5. 4V 3 1 5. 4V 2.01 1.99

6. 5V 4 1 6. 5V 3.01 1.99

7. 6V 5 1 7. 6V 4.01 1.99

8. 7V 6 1 8. 7V 5.01 1.99
 For IE = 3mA For IE = 4mA

S. No VCB IC S. No VCB IC

1. 0V 0.74 0.74 1. 0V 0.75 0.75

2. 1V 0.72 1.72 2. 1V 0.74 1.74

3. 2V 0.68 2.68 3. 2V 0.72 2.72

4. 3V 0.01 2.99 4. 3V 0.68 3.68

5. 4V 1.01 2.99 5. 4V 0.01 3.99

6. 5V 2.01 2.99 6. 5V 1.01 3.99

7. 6V 3.01 2.99 7. 6V 2.01 3.99

8. 7V 4.01 2.99 8. 7V 3.01 3.99

Graph:
4.5

3.5

3
IE=1mA
2.5
IE=2mA
2 IE=3mA
IE=4mA
1.5

0.5

0
0 1 2 3 4 5 6 7
Questions:
1- Define the mode of operation of Transistor.
Answer:
Transistors are non-linear devices. They have four distinct modes of operation, which describe the
current flowing through them.
The four transistor operation modes are:
i. Saturation: The transistor acts like a short circuit. Current freely flows from collector to
emitter.
ii. Cut-off: The transistor acts like an open circuit. No current flows from collector to emitter.
iii. Active: The current from collector to emitter is proportional to the current flowing into the
base.
iv. Reverse-Active: Like active mode, the current is proportional to the base current, but it
flows in reverse. Current flows from emitter to collector (not, exactly, the purpose
transistors were designed for).

2- Explain the ICBO?

Answer:
ICBO is the Reverse Leakage Current between Collector and Base while Emitter is Open. (IE=0). It
is the collector current with collector junction reverse biased and base open-circuited.

3- Explain the reason of decrease of VBE due to increase of VCB in common base
configuration.
Answer:
When VCB increases, CB junction width increases, while EB junction width decreases. The result
of this less recombination of electrons and holes at EB junction. It means more electrons can now
flow between Base and Emitter. Which implies that emitter current, IE increases and VBE
decreases and vice versa. Now we know in Common Base Configuration is;

𝑰𝑪 = 𝜶𝑰𝑬
4- Define the amplification factor of common base configuration.
Answer:
The ratio of output current to input current is known as a Current Amplification Factor. In the
common base configuration, the collector current IC is the output current, and the emitter current
IE is the input current. Thus, the ratio of change in emitter current to the collector at constant
collector-base voltage is known as a current amplification factor of a transistor in common base
configuration. It is represented by α (alpha).
𝚫𝐈𝐂
𝛂=
𝚫𝐈𝐄

5- Explain the doping level of emitter, base and collector region.

Answer:
Emitter:

 Emitter has moderate area.

 It has high doping level.
 The emitter region has more number of charge carriers. Hence it has high doping.
Collector:

 Collector region has a larger area than the other two regions.
 It has moderate doping.
 Compared to the other two regions, the collector carries more current and generates a larger
amount of heat.
 In order to dissipate the heat, collector is made of a larger area.

Base:

 Base has the least area among the 3 regions.

 It has very low doping levels.
 This terminal is also known as control terminal.
 Base terminal is used to control the collector output current of the transistor.

6- Why the collector region of Transistor is larger in size than all other
regions?
Answer:
The reason behind the collector is having the largest size in BJT is because it is the region which
receives the majority of the current carriers, which for a NPN transistor are electrons and for PNP
transistors are holes. The collector receives the current carriers from the base and the emitter
regions of the transistor. When a BJT transistor receives sufficient current at the base, current then
travels from the emitter to the collector.

Because it receives the most current carriers, it generates more heat than all other regions. The
collector region is the largest of all regions because it must dissipate more heat than the emitter or
base regions. It is designed to be large because in order to dissipate all the heater, the extra surface
area allows it to do so. If the collector were smaller, it would overheat quicker, and, thus, the
transistor would overheat easily. The larger area ensures that it has more surface area to dissipate
heat.

THE END