Name: Manan Kalavadia

Roll No.: 200553

Lab Report – 3

Experiment 1:
Objective: Measurement of current gain 𝛽.
Design:

Simulation:

IC = 1.957 mA, IB = 4.341 uA, VBE = 658.644 mV, VCE = 4.021 V (linear region)
𝛽 = IC/IB = 1.957m/4.314u = 453.64
Experimental Results:
• RB = 470 k𝛺, RC = 1k𝛺.
VSOURCE = 4.8V.
• Read Values:
VBE = 0.64 V
VCE = 2.1 V (linear region)
• IC = (VSOURCE – VCE)/RC = 2.7 mA
IB = (VSOURCE – VBE)/RB = 8.85 uA
• 𝛽 = IC/IB = 305.085

Conclusions: Each BJT model has it’s own value of current gain 𝛽. The BJT used in lab and
in simulations are different so different values of 𝛽. The 𝛽 can be calculated by measuring
the collector current and base current, but assure that the BJT is in linear region of
operation, and using 𝛽 = IC/IB.
We even see that the value of VBE is 0.64 V which is very near to 0.7 V which we use for
simplifying the calculations.

Experiment 2:
Objective: Measure reverse active current Gain 𝛽𝑟 and base collector forward voltage
drop.

Design:

Simulations:
VSOURCE = 5V, RB = 500 𝛺, RC = 100 k𝛺
IC = 153.539 uA, IB = 43.958 uA
𝛽𝑟 = IC/IB = 153.539/43.958 = 3.49
VBC = 0.604 V

Experimental Results:
• VSOURCE = 5.2 V
VEC = 5.15 V
VBC = 0.47 V
• RE = 1k𝛺, RB = 470 k𝛺
• IE = (VSOURCE – VEC)/RE = 50 uA
IB = (VSOURCE – VBC)/RB = 10 uA
IC = IB + IE = 60 uA
• 𝛽𝑟 = IC/IB = 6

Conclusions: A transistor in reverse active mode conducts, even amplifies, but current
flows in the opposite direction, from emitter to collector. The downside to reverse active
mode is the βr is much smaller.
Experiment 3
Objective: Display IC vs VCE Characteristics on CRO for a fixed IB.
Design:

Simulations:

VCE, Sat = 200 mV

Experimental Results:

• The value of VCE, Sat = 0.197 mV;

Conclusions: BJT is a non linear device, whose collector current depends on the base
current and not the VCE, after a value of VCE = VCE, Sat. This graph shows that how IC depends
on VCE, and the knee point denotes the VCE, Sat.
Experiment 4
Objective: Measurement of VA.
Design:

Simulations:

Vce graph
Vo graph
IC = 4 mA
vce = 0.1 V (AC amplitude)
vo = 4 mV (AC amplitude)
ice = vo/Rfeed = 4m/1k = 4 uA
ro= vce/ic = 25 k 𝛺

VA = ro * IC = 100 𝛺

Experimental Results:

• Frequency of Voltage source = 1k Hz

• IC = 6 mA
• vce = 0.21 V (AC amplitude)
vo = 10 mV (AC amplitude)
• ice = vo/Rfeed = 10 uA
ro = vce/ic = 21 k𝛺
• VA = ro * IC = 126 V

Conclusions: Early Voltage of the BJT can be measured from the slope of the IC vs VCE
graph slope in the linear mode of operation. We can also find it by using small signal
analysis. With proper values of capacitor and resistors, the measured vout will be 180o out of
phase with vCE, as in small signal analysis the capacitor acts as short. We can see that the
early voltage is 126 V, which is near to the real values of early voltage for npn BJT.
Experiment 5
Objective: Measure thermal voltage VT and saturation current IS
Design:

Simulations:
IC1 = 438 uA, IC2 = 44.378 uA, VBE1 = 620 mV, VBE2 = 562.157 mV.
Plugging all the values in the formula:
VT = 25.26 mV
IS = 9.59 fA

Experimental Results:
• For 100k 𝛺
VSOURCE = 5.057V
VBE1 = 532 mV
IC1 = 45.25 uA
• For 1k 𝛺
VSOURCE = 5.167V
VBE1 = 672 mV
IC1 = 4600 uA
• By plugging the values in formulas
VT = 30.4 mV
IS = 1.136 pA

Conclusions: When the base and collector of the BJT are shorted, it acts like a diode and is
called a diode connected BJT. We find collector currents for two cases using different values
of resistors, and then use the formula to fing VT and IS. As the value of VT is 26mV for room
temperature, but we got more than it. This is because the temperature of the BJT has
increased during it’s operation, hence increasing the VT. By this method we can find the
temperature of the BJT.