DEPARTMENT OF PHYSICS AND NANOTECHNOLOGY

SRM INSTITUTE OF SCIENCE AND TECHNOLOGY

18PYB103J –Semiconductor Physics

Lecture 16

Solved Problems

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18PYB101J Module-IV Lecture-16
 PROBLEMS

(1) For a GaAs semiconductor at 300 K the energy of top of

valence band and bottom of conduction band comes to be
0.759 eV and 2.2 eV respectively. If the bound energy Eb of
shallow impurity level is 0.6 eV. Then calculate the energy of
radiative photon.

Answer:

Band gap of GaAs (Eg )= EC-EV = 2.2-0.759=1.441 eV

Eb =0.6 eV
Energy of radiative photon= Eg-Eb = 1.441-0.6=0.841 eV

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18PYB101J Module-IV Lecture-16
 PROBLEMS

(2) Calculate the energy of free exciton in a III-V (AlAs)

semiconductor compound whose effective mass is m*=0.1
m0 and quantum number n=1. e = 10.06

Answer:Hint:

En =2p 2m*e4 /h2ε2n2

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18PYB101J Module-IV Lecture-16