Dear Sir,

I have developed a MATLAB code for PV cell modeling. The following equivalent one-diode
model is used.

The following formulations are used for solar cell modeling

Tn = Nominal Temperature
T= operating temperature

Jon
 Jscn

Irradiance data set: R. Hulstrom, R. Bird and C. Riordan, Spectral solar irradiance datasets
for selected terrestrial condition, solar cells 15(1985) 365 391

Vocn=log ((Iscn/Ion) +1)*A*((k*Tn)/q);

Gn = Nominal Irradiance: G= Operating Irradiance;

Ipvn = Iscn;

Orientation-dependent Parameters
 Density of states of conduction and valence  Effective mass of hole and electron changes
band Nc and Nv with orientation.
 Intrinsic carrier concentration ni  Band gap, Nc and Nv changes with orientation.
 Nominal SC current and Nominal OC voltage  Band gap change; all parameters change.
 Mobility of hole and electron changes  Effective mass of carriers changes
 Let’s see for GaAs single junction solar cell

At T=300K, G= 1000 W/m2 , Eg = 1.424 eV, electron mass=0.067, hole mass= 0.473,(100) plane

Isc= 0.2383A with Voc = 1.4132 volt and Pmax = 0.32 watt (For Area=4cm2)

n-GaAs
p-GaAs

At T=300K, G= 1000 W/m2 , Eg = 1.46 eV, electron mass=0.067, hole mass= 0.662,(110) plane

Isc= 0.2312A with Voc = 1.4498 volt and Pmax = 0.29 watt (For Area=4cm2)

Following the same procedure, we can extract information for InGaP/GaAs/Ge Tripple and GaAs/Ge
double junction solar cell.[ Lattice matched system]

InGaP
GaAs
Ge