Very Fast Transient Overvoltages (VFTO) in Gas-Insulated UHV Substations

519
2
Very Fast Transient Overvoltages (VFTO)
in Gas-Insulated UHV Substations
Working Group
D1.03
December 2012
VERY FAST TRANSIENT
OVERVOLTAGES (VFTO) IN
GAS-INSULATED UHV
SUBSTATIONS
AG D1.03
Members
U. Riechert (CH) – Convenor,
C. Neumann (DE), H. Hama (JP), S. Okabe (JP), U. Schichler (DE),
H. Ito (JP), E. Zaima (JP)
Copyright © 2012
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ISBN : 978-2-85873-212-8
Very Fast Transient Overvoltages (VFTO) in Gas‐Insulated UHV Substations
Very Fast Transient Overvoltages

(VFTO) in Gas-Insulated UHV
Substations
Table of Contents
SUMMARY ................................................................................................................................................. 3
PREFACE ..................................................................................................................................................... 4
KEYWORDS .............................................................................................................................................. 4
LIST OF SYMBOLS AND ABBREVIATIONS........................................................................................... 5
1 INTRODUCTION............................................................................................................................... 6
2 VERY FAST TRANSIENT OVERVOLTAGE (VFTO)....................................................................... 7
3 GENERAL INSULATION CO-ORDINATION APPROACH ........................................................13
3.1 Step 1 – VFTO Calculation .................................................................................................... 15
3.2 Step 2 – Required VFTO withstand level - Comparison with LIWV ..............................16
3.2.1 Case Review........................................................................................................................ 16
3.2.2 Trapped charge voltage (TCV) ....................................................................................... 17
3.2.3 The effect of VFTO on GIS equipment .......................................................................... 18
3.2.4 The effect of VFTO on other equipment ........................................................................22
3.3 Step 3 – Measures according to the insulation co-ordination .........................................22
3.4 Disconnector with damping resistor ...................................................................................... 23
4 SPECIAL REQUIREMENTS FOR TESTING ................................................................................... 27
5 CONCLUSIONS .............................................................................................................................28
REFERENCES ............................................................................................................................................29
Page 2
SUMMARY
During switching of disconnector switches (DS) in gas-insulated switchgear (GIS) a varying number of
pre-strikes and re-strikes occur. Due to the very short duration of the voltage collapse of a few
nanoseconds at the switching gap, travelling surges are generated in the GIS. The multiple refractions
and reflections of these surges at impedance discontinuities within the enclosures create complex
waveforms (very fast transient overvoltages – VFTO). VFTO in GIS are of greater concern at the highest
rated voltages, for which the ratio of the lightning impulse withstand voltage (LIWV) to the system voltage
is lower. As the rated voltage increases, the difference between the rated lightning impulse withstand
voltage and the VFTO decreases. Hence, VFTO can become the limiting dielectric stress which defines
the dimensions in certain cases.
VFTO simulation is a well-known instrument for the calculation of overvoltages needed for the insulation
co-ordination process. Because the accuracy of the simulation strongly depends on the quality of the
model of each individual component, it is important to verify the simulation results by measurements. If
the calculated VFTO level is higher compared to the withstand level, special measures to mitigate the
VFTO are required. Summarizing the different experiences a procedure with three steps is proposed and
described in detail, following the general insulation co-ordination approach:
Step 1 Calculation of VFTO (peak value and rise time)
Step 2 Comparison of calculated VFTO values with LIWV level for the
different equipment by using:
 Co-ordination factor Kc
 Safety factor Ks
 Test conversion factor Ktc
Step 3 Definition of measures according to the insulation co-

ordination
As an indication the required withstand voltage depends on both the dielectric behaviour of the
equipment and the trapped charge behaviour of the DS. A low trapped charge voltage provides an
additional safety margin. As a result the withstand voltages could be different for the different equipment
(oil insulation, SF6 insulation, air insulation) and for a different DS design.
One possible solution for damping of VFTO in GIS is the integration of a damping resistor, a well proven
technology. Overvoltage mitigation technologies can also contribute to reduce the total costs of extra
high voltage (EHV) and ultra high voltage (UHV) systems due to size reduction of substation equipment
and transmission towers. In case of a DS with damping resistor special requirements regarding testing
must be taken into account.
Page 3
PREFACE
Gas-Insulated Switchgear is a technology milestone providing reliable power in numerous applications
throughout the power grid. Recent developments in ultra high voltage gas-insulated switchgear
substations especially for the Chinese and Indian market renewed the importance of the very fast
transient analyses, which became a design factor for such UHV levels. This TB presents the results of
the CIGRÉ ad hoc TF “Very Fast Transient Overvoltages (VFTO) in Gas-Insulated UHV Substations” of
AG D1.03. The content of the TB was discussed in different working groups.
CIGRÉ WG A3.22 Technical Requirements for Substation Equipment Exceeding

800 kV
CIGRÉ WG B3.22 Technical Requirement for Substations Exceeding 800 kV
CIGRÉ WG C4.306 Insulation Coordination for UHV AC Systems
CIGRÉ WG D1.36 Special Requirements for Dielectric Testing of Ultra High Voltage
(UHV) Equipment
CIGRÉ Ad Hoc TF of AG D1.03 VFTO in UHV GIS Systems
CIGRÉ WG A3.28 Switching phenomena and testing requirements for UHV & EHV
equipment
CIGRÉ WG B3.27 Field tests technology on UHV substation during construction and
operation
All their contributions are gratefully acknowledged.
The document was reviewed by a group of expert representatives from Study Committee SC A3 - High
Voltage Equipment, Study Committee SC B3 - Substations and Study Committee SC C4 - System
Technical Performance.
Nominated Expert Representatives
H. Ito (JP) SC A3 Convener Working Group A3.22 / A3.28
E. Kynast (DE) SC A3 Secretary SC A3
U. Riechert (CH) SC B3
E. Zaima (JP) SC C4 Convener Working Group C4.306
C. Neumann (DE) SC C4
KEYWORDS
Ultra-High Voltage (UHV) – Gas-Insulated Switchgear (GIS) – Disconnector Switch (DS) – Bus-
Charging Switching – Very Fast Transient Overvoltage (VFTO) – Trapped Charge Voltage (TCV) –
Damping Resistor
Page 4
LIST OF SYMBOLS AND ABBREVIATIONS

Ka Altitude correction factor (The altitude correction factor Ka is part of the atmospheric
correction factor Kt.)
Kc Co-ordination factor (factor by which the value of the representative overvoltage must be
multiplied in order to obtain the value of the co-ordination withstand voltage)
Ks Safety factor (overall factor to be applied to the co-ordination withstand voltage, after the
application of the atmospheric correction factor (if required), to obtain the required
withstand voltage, accounting for all other differences in dielectric strength between the
conditions in service during life time and those in the standard withstand voltage test)
Kt Atmospheric correction factor (factor to be applied to the co-ordination withstand voltage
to account for the difference in dielectric strength between the average atmospheric
conditions in service and the standard reference atmospheric conditions It applies to
external insulation only, for all altitudes)
Ktc Test conversion factor (for a given equipment or insulation configuration, the factor to be
applied to the required withstand voltage, which describes the different withstand
behaviour under VFTO stress compared to the stress with standard LI voltages)
kVFTO Safety factor (used for the Chinese 1100 kV pilot project)
pu per unit
R Resistance
RDS Damping resistor
Sm Main arcing contact
Sr Arcing electrode
Ucw_VFTO Co-ordination withstand VFTO
Umax_VFTO Maximum calculated VFTO
Ur Rated voltage
Urw_VFTO required withstand VFTO
UTCV Trapped charge voltage
AC Alternating current
CB Circuit-breaker
CT Current transformer
DC Direct current
DS Disconnector switch
EHV Extra high voltage
EMF electromagnetic field
EMI electromagnetic interference
FT Fast transient
FTO Fast transient overvoltage (The IEC 60071-1 uses FFO fast-front overvoltage instead of
FTO. Because FTO is more generally used, the authors have used FTO.)
GIS Gas-insulated switchgear
Page 5
Hybrid IS Hybrid-insulated switchgear

LIWV Standard rated lightning impulse withstand voltage of an equipment or insulation
configuration
MTS Mixed technology switchgear
SF6 Sulphur hexafluoride
TCV Trapped charge voltage
TEV Transient enclosure voltage
TEMF Transient electromagnetic field
TJ Triple junction
UHV Ultra high voltage
VFF Very-fast-front
VFFO Very-fast-front overvoltage (The IEC 60071-1 uses VFFO fast-front overvoltage instead of
VFTO. Because VFTO is more generally used, the authors have used VFTO.)
VFT Very fast transient
VFTO Very fast transient overvoltage
VT Voltage transformer
1 INTRODUCTION
Very fast transient overvoltages (VFTO) arise within a GIS any time there is an instantaneous change in
voltage. Most often this change occurs as a result of the opening or closing of a disconnector switch
(DS). Other events, such as the operation of a circuit-breaker (CB), the occurrence of a line-to-ground
fault or the closing of an earthing switch can also cause VFTO. However, during a DS operation a high
number of re-strikes and pre-strikes occur due to the low operating speed of DS compared to a circuit-
breaker. Therefore, DS switching is the main source for generating VFTO. The transients are
characterized by their short duration and very high frequencies. The rise times are in the range of some
ns, with dominant frequency components up to 100 MHz. The generation and propagation of VFTO from
their original location throughout a GIS can produce internal and external transient overvoltages (see
Figure 1). The main concerns are internal overvoltages between the conductor and the enclosure.
Internal VFTO cause high stress of the insulation system. It has been found that, particularly at 420 kV
and higher system voltage levels, disruptive discharges to earth might occur when switching small
capacitive currents with gas-insulated DS. The development of an earth fault by branching of the leader
during DS switching depends on parameters such as voltage, gap distance, electrode geometry, contact
speed, gas pressure and magnitude and frequency of VFTO. A proper design of the DS has shown, that
in practice earth faults can be eliminated. The geometry of the contact gap can be designed in such a
way that the strike occurs where the radial field gradient influencing the branching leader discharge is at
a minimum. Screening the strike area with specially designed shielding electrodes and initiating the
strike near the axis of the gap, are suitable measures [2].
However, external VFTO can be dangerous for secondary and adjacent equipment. These external
transients include transient voltages between the enclosure and ground at GIS-air interfaces, voltages
across insulating spacers in the vicinity of GIS current transformers, when they do not have a metallic
screen on the outside surface, voltages on the secondary terminals of instrument transformers, radiated
electromagnetic fields (EMF) which can be dangerous to adjacent control or relay equipment, in sense of
causing damages or malfunctions [3].
Page 6
switching operation in gas-insulated substations
Origin
Very fast transients in gas-insulated substations
VFTO
Internal transient voltages External transient voltages

Transient
Propagation Travelling waves Transient
enclosure Travelling
between inner conductor and electromagnetic fields
voltage waves on overhead lines
enclosure TEMF
TEV
Stresses and
Stresses in connected
electromagnetic
Effect Stresses in insulation equipment (transformer,
interference (EMI) in
VT …)
secondary equipment
Figure 1 Classification of VFTO in gas-insulated substations
2 VERY FAST TRANSIENT OVERVOLTAGE (VFTO)

During switching of DS in GIS a varying number of pre-strikes and re-strikes occur, depending of the
speed of the switching device. Due to the very fast voltage collapse time of a few nanoseconds at the
switching gap, travelling surges are generated in the busbar duct. The multiple reflections and refractions
of these surges at impedance discontinuities within the compartments give rise to complex waveforms,
which depend on the design, the operating conditions and external configurations of the GIS [3].
For the discussion about the severity of the traveling waves, a detailed analysis of the current/voltage
characteristics is necessary. The voltage collapse during the spark development provides the excitation
function for the transients. After the formation time lag has passed, an additional phase with the duration
tb (spark formation time) is needed to complete the breakdown, which is followed by the voltage collapse.
The spark formation time itself is given by the Toepler`s spark law. Due to the high breakdown field of
SF6, the more uniform electric fields, smaller gap distances and higher gas pressure, nanosecond rise
times can be estimated in GIS. Measurements in a 550 kV and 1100 kV gas-insulated DS showed rise
times between 3 ns and 10 ns depending on the gas pressure and field utilization factor at the time of the
strike (see Figure 2) [10].
The rise times of overvoltages generated by an air-insulated DS are in the range between 0.4 μs and
1.5 μs, as shown in Figure 2 [8]. Besides the lower rise time, traveling waves on overhead lines are also
characterized by lower frequency components.
Page 7
Figure 2 Spark formation time for SF 6 and air (calculated and measured values)
The maximum value of the VFTO depends on the voltage difference across the contacts just before
striking and the location considered. Trapped charge remaining on the load side of a DS must be taken
into consideration. A trapped charge on the load side resulting in a voltage of -1 pu (per unit), resulting in
2 pu across the DS is normally taken into account as the most unfavourable case for high speed DS or
phase opposition conditions. This precondition is normally used for the calculation of VFTO [5, 6]. For
this case the maximum VFTO peak in GIS configuration has a typical value between 1.5 pu and 2.8 pu.
Extremely high values of more than 3.0 pu have been reported. It can be shown, however, that these
values have been derived by calculation using unrealistic simplified simulation models [7]. VFTO in GIS
are of greater concern at the highest rated voltages, for which the ratio of the lightning impulse withstand
voltage (LIWV) to the system voltage is lower [5, 12, 15, 16].
As the rated voltage increases, the difference between the rated lightning impulse withstand voltage
(LIWV) and the VFTO decreases, as shown in Figure 3. Figure 3 shows also the calculation results for
different GIS and Hybrid IS (MTS) at different voltage levels. The maximum calculated VFTO in GIS
system may reach the insulation level of LIWV [9]. In case of Hybrid IS a maximum calculated VFTO of
2.2 pu is reported, because of the lower length of busbar sections [5].
The two following simple examples illustrate the generation of VFTO in GIS and the influence of some
parameters. The propagation of VFTO throughout GIS can be analysed by representing GIS sections as
low-loss distributed parameter transmission lines. Each section may be characterized by the surge
impedance and the time of travelling. Travelling waves are reflected and refracted at every point where
they encounter a change in the surge impedance. The generated transients depend on the GIS
configuration and on the superposition of the surges reflected and refracted on line discontinuities like
circuit-breakers, T-junctions, cable connections or bushings. Thereby, the main frequencies depend on
the length of the GIS sections. Due to the travelling wave behaviour of the VFTO, the overvoltages show
a spatial distribution. Normally, the highest overvoltage stress is reached at the open end of the load
side. For the calculation of VFTO stresses, the trapped charge remaining on the load side of the DS
must be taken into consideration. For the first simulations a value of -1 pu (worst case) was used.
Page 8
5.0
Rated lightning impulse withstand voltage
Rated switching impulse withstand voltage
Rated power frequency withstand voltage (peak)
Voltage [pu] 4.0
3.0 GIS
GIS
GIS
MTS
2.0 MTS
1.0
Japan South Africa China
0.0
300 500 700 900 1100
Rated voltage Ur [kV]
Figure 3 Dependency of rated withstand voltages and calculated VFTO on rated

voltage as per IEC 62271-203 [20], calculated values from [5, 6, 21, 22] (different
symbols for different substation)
Figure 4 (left – case A) shows a very simple case: a GIS busbar. The reflections of the travelling wave at
both terminals produce at the open end a pulse-shaped transient of constant magnitude of +3 pu and
constant frequency (Figure 5 – left). Maximum voltages can reach higher values in more complex GIS
configurations. Figure 4 (right – case B) shows a T-junction GIS network. The simulations show that the
voltage at the open end of the longer busbar section is higher. The worst case occurs if the length ratio
between the two busbars is in the range of 2 (for comparison see Figure 6). The fact that each GIS
contains T- or X-connections gives an indication that the maximum VFTO in GIS is normally higher
compared to a Hybrid-IS.
10 m
5m 5m
U
U
20 m
Figure 4 Model network; left: case A, right: case B
Figure 5 (right) shows the simulation result obtained with a more realistic representation of the source
(R = 10 Ω). The frequency is still the same. The maximum VFTO at the open end is lower for both cases
and the transient is damped. The maximum voltage for case B is 3.3 pu.
Page 9
6 4
5 Case B 3 Case B
4 Case A Case A
2
3
Voltage [pu]
Voltage [pu]
2 1
1
0
0
-1
-1
-2 -2
0 100 200 300 400 500 0 100 200 300 400 500
Time [ns] Time [ns]
Figure 5 Simulation results with trapped charge voltage of -1 pu; left: ideal source,
right: R = 10 Ω
Depending on the design of the disconnector, especially on contact speed, dielectric design of the
contacts and SF6 gas pressure the assumption of trapped charge resulting in -1 pu voltage is a very
conservative assumption for VFTO calculations [13]. Detailed measurements in a 380 kV substation
have shown that the measured VFTO peak voltage is approximately 20 % lower compared to the
calculated VFTO peak value using a trapped charge voltage of -1 pu [14].
For a slow acting DS (< 1 m/s) the trapped charges were evaluated statistically [33]. The evaluation of
type test results for the 1100 kV DS have revealed that the 99 % voltage associated with trapped
charges where 0.45 pu at a source voltage of 1 pu.
Figure 6 shows that the voltage at the open end for case B is reduced to a value of 2.7 pu (-20 %) by
using a realistic value for the trapped charge voltage. Depending on the trapped charge voltage
characteristic of the DS the resulting additional safety factor for the insulation co-ordination can be > 1.4
for the traditional VFTO calculations assuming -1 pu trapped charges.
4 3
3 Case B
Case A 2
2
Voltage [pu]
Voltage [pu]
1 1
0
0 Case B
-1 Case A
-2 -1
0 100 200 300 400 500 0 100 200 300 400 500
Time [ns] Time [ns]
Figure 6 Simulation results with trapped charge voltage of -0.45 pu; right: the length
of both busbars in case B was set to 10 m
Summarizing, the explanation suggests that normally the maximum VFTO is lower in Hybrid IS
compared to GIS arrangements. For verification, an accurate model for a typical Hybrid IS connected to
Page 10
a transformer via overhead line is used. Figure 7 shows the calculation results. For the simulation the
worst case assumption for the trapped charge voltage of -1 pu was used. The maximum VFTO inside the
GIS is lower than 2.1 pu. The maximum VFTO at the transformer terminal is lower than 1.7 pu
respectively [25].
2 2.5
20 m 2 20 m
50 m 50 m
1.5 1.5
Voltage [pu]
Voltage [pu]
1
1 0.5
0.5 -0.5
-1
0 -1.5
0 1 2 3 4 5 0 1 2 3 4 5
Time [us] Time [us]
Figure 7 VFTO simulation results for a typical Hybrid IS; left: at the transformer
terminal, right: directly at the DS on the load side, the length of the overhead line between
the Hybrid IS and the transformer was 20 m or 50 m [25]
The main portion of the damping of the VFT occurs by out-coupling at the transition to the overhead line.
This propagation of VFTO on air-insulated lines and busses is lossy and results in an increase of the
VFT rise time (lower rate of voltage rise). Therefore, a longer overhead line between GIS and
transformer mitigates the VFTO stress at the connected transformer. Figure 7 illustrates this effect. A
30 m longer overhead line connection results in a 10 % lower VFTO peak value both at the transformer
bushing and at the load side of the DS [25].
One special case is a transformer directly connected to the GIS. This configuration could lead to higher
VFTO peak values at the transformer terminal. One typical example is shown in Figure 8 [25].
2.5
1.5
Voltage [pu]
0.5
0
DS
-0.5
Transformer
-1
-1.5
1 1.5 2
Time [us]
Figure 8 VFT overvoltage at the transformer terminal and at the DS (GIS) [25]
Page 11
It can be concluded, that in most cases the maximum VFTO is lower in Hybrid IS compared to a GIS.
Based on a literature survey, it can be assumed, that the maximum VFTO peak value in GIS using the
worst case assumption for the trapped charge voltage of -1 pu is lower than 2.5 pu to 2.6 pu. Whereas
for a Hybrid IS, the maximum reported value is lower than 2.2 pu. Using a realistic value for the trapped
charge voltage of -0.45 pu the maximum VFTO value is lower than 2.1 pu for GIS or 1.8 pu for Hybrid IS.
Because the generated transients depend strongly on the specific configuration and on the superposition
of travelling waves it is not possible to give generally admitted values, valid for each case. An accurate
simulation for each substation, especially in the UHV range, is necessary for the insulation co-ordination
as basis for the decision making about possible countermeasures. The accuracy of VFTO simulations
itself depends strongly on the quality of the model of each individual component. Therefore, it is
important to verify the simulation results by measurements [11].
Concluding it could be necessary to design and maybe to test considering the VFTO level or to suppress
severe VFTO. Different approaches are known and used to determine the necessary measures
according to the insulation co-ordination.
For the 1100 kV transmission in Japan GIS technology was used for the first time. One important design
aspect was the evaluation of overvoltage mitigation possibilities. Overvoltage mitigation technologies can
contribute to reduce the total costs of EHV and UHV systems due to size reduction of substation
equipment and transmission towers. The keys for these technologies are suppressing various incidents
of overvoltage and finding ways to reduce lightning and switching surges [23].
Since a UHV transformer is directly connected to GIS, overvoltages occurring during switching of DS or
ground switches may directly enter the transformer terminal [29]. The level of these switching
overvoltages has to be suppressed as much as possible. To keep VFTO below 1.3 pu, new DS were
provided with 500 Ω damping resistors for both closing and opening [30, 31]. Moreover, DS with damping
resistor reduces magnitudes of transmitted VFT surges effectively which penetrate into secondary
equipment installed near GIS.
The VFTO of each substation for the Chinese 1100 kV pilot project was calculated using the most
unfavourable case corresponding to a remaining trapped charge voltage of -1 pu. The calculated values
were compared to the LIWV for the different equipment by introducing a co-ordination coefficient. The
VFTO withstand level is equal to the LIWV divided by the co-ordination coefficient. If the calculated
VFTO level is higher compared to the withstand level, special measures to mitigate the VFTO are
required [5].
Page 12
3 GENERAL INSULATION CO-ORDINATION APPROACH

Summarizing the different experiences a procedure can be proposed, following the general insulation co-
ordination approach [17, 19]. The procedure consists of the following three steps (see Figure 9):
 System analysis (travelling wave computer simulation

program)
 Calculation of the maximum peak value and rise time for the
GIS and the connected equipment
 Use of real trapped charge behaviour of the disconnector, if
known
 Otherwise the worst case assumption of a trapped charge
voltage (TCV) of -1 pu should be used for the simulation.
 The accuracy of the simulation model must be verified.
Step 2 Calculation of the required VFTO withstand voltage UCW_VFTO for the
 Co-ordination factor Kc (statistical distribution, inaccuracy of

simulation, frequency of occurrence, volume effect)
 Safety factor Ks (atmospheric correction if applicable, aging
behaviour in service, quality of installation)
 Test conversion factor Ktc (for a given equipment or insulation
configuration, the factor to be applied to the required withstand
voltage, which describes the different withstand behaviour
under VFTO stress compared to the stress with standard LI
voltages)
Comparison of calculated required VFTO withstand voltage values with

LIWV level
Step 3 Definition of measures according to the insulation co-ordination
 No damping measure required

 Damping measure required (DS with low TCV, Damping
resistor – definition of required resistance value, other
mitigation methods)
Page 13
Trapped charge voltage

(TCV) behavior
known
NO YES: UTCV = - 0.3 … - 1.0 pu

System analysis
VFTO calculation
NO: UTCV = - 1.0 pu (verified calculation
method)
Evaluation of trapped
charge behavior Maximum
calculated VFTO
Umax_VFTO
Insulation characteristic
 Statistical distribution
 Inaccuracy of simulation Kc Selection of the insulation
Co-ordination factor KC
meeting the
performance criterion
Correction factors
Co-ordination withstand
 Atmospheric correction
factor Kt voltage
Ucw_VFTO
 Aging in service
 Quality of installation
Ks
Safety factor KS Application of factors to
account for the
differences between
YES: Kt
External type test and actual
insulation service conditions
Required withstand
voltage
Urw_VFTO
Test conditions
Test conversion factor Ktc Ktc
Comparison with LIWV
Conversion oft VFTO to
standard lightning impulse LIWV ≥ Urw_VFTO
withstand voltage (LIWV)
NO
Definition of required
mitigation measures YES
 Trapped charge behavior

 Resistance value for
No mitigation measures
damping resistor
 Other mitigation methods necessary
Sided boxes refer to required input
Sided boxes refer to performed actions
Sided boxes refer to obtained results
Figure 9 Insulation co-ordination according to IEC 60071-1
Page 14
3.1 Step 1 – VFTO Calculation

The concept that GIS is a network of interconnected transmission lines can be demonstrated with
simulation using travelling wave computer programs. The accuracy of a simulation depends on the
quality of the model of each individual GIS component. In order to achieve reasonable results even for
time periods of some micro-seconds or for very complex GIS structures, highly accurate models for each
internal component and also for external components, connected to the GIS, are necessary. Modelling
guidelines are given in [3, 7].
An accurate modelling of each individual GIS component makes it possible to reproduce VFTO
waveforms with a relatively high precision (differences lower than 5 %), especially in short GIS structures
or test equipment. Figure 10 shows a comparison of simulated and measured VFTO. The measured
voltage progressions coincide very well with the simulation results as regards VFTO amplitude and rise
time [33].
1500
1300
1100
900
Voltage [kV]
700
500
300
100 Measurement
Calculation
-100
1.8 1.9 2 2.1 2.2 2.3 2.4 2.5
Time [us]
Figure 10 VFTO calculation and measurement when switching busbars with a GIS DS
as per IEC 62271-102 [1], without pre-charging (left), test set-up (right)
Nevertheless, variations of more than 10 % depending on the calculation methods are reported (see
Table 1). Therefore, it is important to verify the simulation results by measurements.
VFTO appearing in GIS are caused not only by DS operation. Other events, such as the operation of a
circuit-breaker, the occurrence of a line-to-ground fault or the closing of an earthing switch can also
cause VFTO. However, during a DS operation a high number of re-strikes and pre-strikes occur due to
the low operating speed of DS compared to a circuit-breaker.
A flashover or breakdown within GIS produces VFTO. The VFTO amplitude depends on the time to
breakdown which is higher in case of a homogeneous than in an inhomogeneous field. If the breakdown
occurs in an almost homogeneous field, a maximum voltage enhancement factor of 1.7 compared to the
applied voltage peak has to be assumed [2]. In case of a breakdown at a defect having an extremely
inhomogeneous field the voltage collapse time is longer and this leads to a higher damping and a lower
enhancement factor of 1.45 [2]. Nevertheless, subsequent breakdowns at defects with inhomogeneous
field distribution may result. Therefore the breakdown to earth is of special concern during on-site
testing.
Page 15
Because of the trapped charge voltage remaining on the busbar, a making operation of an earthing
switch can produce VFTO. The maximum VFTO measured during the field test of the 1100 kV GIS in
Japan was 1.13 pu [12].
Circuit-breakers may also generate transients in GIS. But due to their very fast operation only a few
number of strikes occur. VFTO occur during making of CB. Especially under out-of-phase conditions, the
amplitude can reach up to 2 pu. A larger number of re-strikes may occur for the special case of switching
of small inductive current during shunt-reactor switching.
3.2 Step 2 – Required VFTO withstand level - Comparison with LIWV
3.2.1 CASE REVIEW
For the Chinese UHV pilot project a detailed VFTO study was carried out for the substations Jindongnan,
Nanyang and Jingmen. The calculation results are summarized in Table 1. The calculated peak values
of VFTO at Jindongnan GIS can reach 2742 kV (3.05 pu) which is higher compared to the LIWV. For
Hybrid IS, the peak values of VFTO at GIS parts, bushing, shunt reactor and current and voltage
transformer don't exceed their insulation withstand strength. In some cases, extremely high values
(higher than 3 pu) are reported. As stated above most probably these values have been derived by
calculation using unrealistic simplified simulation models. Therefore it is very important to verify the
simulation results by measurements.
Table 1 VFTO calculation results for the Chinese pilot project

Jingdongnan [GIS] Nanyang [MTS] Jingmen [MTS]
double double single double double double double
busbar busbar busbar busbar busbar busbar busbar
single future future double
busbar extension extension busbar
Damping resistor Yes Yes Yes Yes

No No No No 500 Ohm 500 Ohm No 500 Ohm No No 500 Ohm
Transformer
LIWV [kV] 2250 2250 2250 2250 2250 2250 2250 2250 2250
safety factor 1.15 1.15 1.15 1.15 1.15 1.15 1.15 1.15 1.15
Protection level VFTO [kV] 1957 1957 1957 1957 1957 1957 1957 1957 1957
VFTO [kV] 954 1123 942 1083 905 969 1016 1355 981
VFTO [pu] 1.06 1.25 1.05 1.21 1.01 1.08 1.13 1.51 1.09
VFTO / Protection level 0.49 0.57 0.48 0.55 0.46 0.50 0.52 0.69 0.50
GIS
LIWV [kV] 2400 2400 2400 2400 2400 2400 2400 2400 2400 2400 2400
safety factor 1.15 1.15 1.15 1.15 1.15 1.15 1.15 1.15 1.15 1.15 1.15
Protection level VFTO [kV] 2087 2087 2087 2087 2087 2087 2087 2087 2087 2087 2087
VFTO [kV] 2249 1940 2260 2742 1250 1157 1878 1204 1836 1409 1268
VFTO [pu] 2.50 2.16 2.52 3.05 1.39 1.29 2.09 1.34 2.04 1.57 1.41
VFTO / Protection level 1.08 0.93 1.08 1.31 0.60 0.55 0.90 0.58 0.88 0.68 0.61
GIS bushing
LIWV [kV] 2400 2400 2400 2400 2400 2400 2400 2400 2400 2400 2400
safety factor 1.15 1.15 1.15 1.15 1.15 1.15 1.15 1.15 1.15 1.15 1.15
Protection level VFTO [kV] 2087 2087 2087 2087 2087 2087 2087 2087 2087 2087 2087
VFTO [kV] 2295 2120 1722 2024 1141 1134 1850 1199 1948 1733 1266
VFTO [pu] 2.56 2.36 1.92 2.25 1.27 1.26 2.06 1.33 2.17 1.93 1.41
VFTO / Protection level 1.10 1.02 0.83 0.97 0.55 0.54 0.89 0.57 0.93 0.83 0.61
Literature [5] [4] [5] [5] [5] [5] [5] [5] [5] [4] [5]
Page 16
Basis for the insulation co-ordination is the calculation of the required VFTO withstand voltage.
According to the Chinese approach the insulation withstand strength is equal to LIWV divided by the
safety factor kVFTO [5]. The safety factor was set to 1.15. The same safety factor was used for all types of
equipment excluding the air-insulated busbar.
An exact definition of the safety factor cannot be given at the moment. The necessary safety depends on
many factors and could be different for the different kinds of equipment. The requirements have to be
studied in detail to give recommendations for future applications. The CIGRÉ WG C4.306 “Insulation Co-
ordination for UHV AC Systems” will review and discuss insulation co-ordination practice in the UHV AC
range [17]. The task of the WG should cover the co-ordination of withstand voltages and safety factors
for the equipment. Generally, the safety factor to be defined is influenced by the breakdown behaviour of
the insulating material, the frequency of occurrence and the probability of trapped charge voltages as a
basis for the simulation. When selecting the insulation withstand level with respect to fast and very fast
transient overvoltage stresses further aspects should not be disregarded, e. g.:
 The absolute number of occurrence of overvoltage processes caused by disconnector switching

during the total lifetime of the equipment is in the range of some thousands up to ten thousand
whereas the number of overvoltage processes due to lightning is in the range of some tens up to a
few hundred. It has to be mentioned, that the number of sparks depends on the disconnector
design and especially on the contact speed. A higher contact speed reduces both sparking time
and the number of sparks [18].
 Overvoltages due to disconnector switching cannot be limited by arresters, as they are internal
overvoltages.
3.2.2 TRAPPED CHARGE VOLTAGE (TCV)
The maximum value of the VFTO depends on the voltage drop at the DS just before striking and on the
location considered. For the calculation of VFTO stresses, the trapped charges remaining on the load
side of the DS must be taken into consideration. Before disconnecting, all sections within one phase had
the same voltage and phase angle. Afterwards the opened section remains at the potential it had at the
moment after the last re-strike. The floating section of busbar has therefore been charged to a DC
voltage. Since the GIS section has a known capacitance, the DC voltage can be expressed as a trapped
charge. The amplitude of the remaining DC voltage depends on the DS characteristics, mainly the
contact speed and geometry.
Switching by a slow acting DS generates numerous re-strikes between the moving and fixed contacts,
but 99 % of the trapped charge voltages were limited to 0.4 pu [2]. The trapped charge left when opening
a pure capacitive load gives remaining voltages ranging from 0.1 pu to 0.5 pu, peaked around 0.3 pu.
This produces values of the voltage across the DS at first strike of 1.1 pu to 1.5 pu. Figure 11 shows an
example of measured trapped charge voltages during testing of DS, for both applications 550 kV and
1100 kV [4]. For these cases, the resulting VFTO is in the range of 1.7 pu and reach 2.0 pu for very
specific cases. Fast operating DS on the other hand can leave trapped charge levels corresponding to
1 pu in a non-negligible number of cases [3]. The trapped charge voltage behaviour strongly depends on
the contact speed, as shown in the simulation plot (see Figure 11) [33]. A lower trapped charge voltage
gives a higher safety margin compared to the calculation based on a trapped charge voltage of 1 pu. For
the insulation co-ordination this additional margin has to be considered.
Page 17
8%
1
1100 kV calculated
Trapped charge voltage (abs.) [pu]

550 kV 90% probability
6%
0.8 95% probability
99% probability
measured
Probability
0.6
4%
0.4
2%
0.2
0% 0
-1 -0.75 -0.5 -0.25 0 0.25 0.5 0.75 1 0 0.5 1 1.5 2 2.5 3 3.5
Trapped charge voltage [pu] Contact speed [m/s]
Figure 11 Measured trapped charge voltage during DS switching under laboratory

conditions, probability density (left), Influence of contact speed on trapped charge voltage
during DS switching (right) [33]
Annex F of IEC 62271-102 describes the requirements for switching of bus-charging currents by DS for
rated voltages of 72.5 kV and above [1]. During type testing of bus charging current switching a trapped
charge voltage of -1.1 pu has to be applied. Test duty 1, switching of a very short section of busbar duct
is a normal type test and is mandatory for DS. The test circuit was chosen in such a way, that maximum
peak values for VFTOs were generated and it was assumed that they would also be the highest possible
in the GIS. Typical VFTO peak values during type testing are in the range between 2.5 pu and 2.8 pu,
covering the maximum transient overvoltages measured onsite.
For testing the established TCV value of -1.1. pu is reasonable in order to generate maximum possible
VFTO peak values. For the insulation co-ordination the real trapped charge behaviour of the
disconnector has to be considered. The assumption of a more realistic TCV value leads to more realistic
insulation co-ordination calculations and thus allows for reducing the total cost of UHV substations. The
trapped charge voltage is specific for each design and depends mainly on the contact speed and the
field homogeneity of the contact system. The TCV could be analyzed during type testing or simulated
with high accuracy as basis for the insulation co-ordination.
3.2.3 THE EFFECT OF VFTO ON GIS EQUIPMENT
Breakdown caused by VFTO is improbable in a well-designed GIS insulation system during normal
operations. However, breakdown values can be reduced by insulation irregularities like protrusions. The
breakdown probability is very low for low VFTO amplitudes. It increases with the frequency of the
oscillations and the degree of the field homogeneity. The VFTO stress has been related to the LIWV,
which is generally the base for GIS design. For sound insulating system the VFTO stress is covered by
the withstand capability for standard LI voltages (see Figure 12) [2]. Caused by the statistical and
formative time lag for the breakdown channel, all VFTO breakdown or flashover voltages are above the
LIWV.
Figure 13 a shows voltage-time characteristics of an 84 kV bus system including epoxy cone-type barrier
insulators at 0.3 MPa SF6 as an example [24]. The computed voltage-time curves by electric field
analysis are compared with the experimental data. For times longer than several microseconds, the
Page 18
voltage-time characteristics of quasi-homogeneous field arrangements are relatively flat for negative and
positive polarity. For times shorter than 1 μs, the breakdown voltage increases with decreasing time.
This phenomenon is more pronounced with increasing gas pressure and field non-uniformity.
Figure 12 Principal voltage-time characteristic of SF 6 [2]
Special attention has to be paid when defects are present. Irregularities of the insulation system like
needle shape protrusions or triple junctions of insulators cause extremely inhomogeneous fields. The
inhomogeneous fields due to defects give considerably lower breakdown values compared to a sound
system. But also in case of inhomogeneous fields the minimum breakdown voltage occurs for lightning
impulse waveform having a front time of 5 µs. For times shorter than 1 μs, the breakdown voltage
increases with decreasing time caused by the changing leader inception conditions. This behaviour
applies to both, fixed metallic particle on high voltage electrode (see Figure 13 b) and arrangements with
local field concentration at triple junction at which solid insulator meets the metal electrode in SF6 (see
Figure 13 c) [24, 26].
Only for VFTO containing small damping (Figure 14 a), the breakdown voltage value for VFTO might be
lower as for LI voltage stress (Figure 15) [2]. During disconnector operations in real GIS the composite
VFT stress according to Figure 14 c has to be considered. In this case the breakdown value for LI stress
and VFTO stress is almost the same.
Moreover, fixed protrusions on live parts are usually avoided by a proper design, quality control and
adequate testing in both factory and on-site. They can be detected by sensitive diagnostic
measurements under AC voltage stress [28].
Page 19
Configuration Voltage-time Characteristic
a) Quasi-homogeneous field
b) Inhomogeneous field
Metallic particle
c) Inhomogeneous field
Triple junction (TJ)
Figure 13 Voltage-time characteristics of typical homogeneous and inhomogeneous

electric fields in GIS; a) without defects in GIS coaxial electrode system, b) with fixed
metallic particle on high voltage electrode, c) with local field concentration at triple
junction at which solid insulator meets metal electrode in SF 6 [24, 26]
Page 20
a) VFTO stress with small

damping
b) Example of composite
voltage stress in GIS with FT
and VFT components
c) Example of composite
voltage stress in GIS with FT
and VFT components
(typical case)
Figure 14 Composite stress with different FT and VFT components [2]
A properly designed SF6 insulating system is able to withstand the transient and very fast transient
overvoltages, since the GIS insulation stressed by VFTO can be covered by the standard lightning
impulse stress. Special attention has to be paid when defects are present in the insulation system. The
field enhancement due to the defects gives considerably lower breakdown voltages. Failures even
occurred due to disconnector switching generated VFTO, often in the vicinity of the disconnector itself or
at the end of busbar sections.
Page 21
Figure 15 Voltage-time characteristic for transient voltage stress, fixed metallic particle
(l = 15 mm) in SF 6 : LI stress (◇); composite stress acc. to Figure 14 a (-) and Figure 14 c
(·) [2]
3.2.4 THE EFFECT OF VFTO ON OTHER EQUIPMENT
SF6 insulated bushings can be affected as other SF6 equipment. Very few problems have been reported
with capacitive graded bushings. Transformer are either directly connected through SF6 bushings or
indirectly by SF6–air bushings, overhead lines and air-oil bushings. Direct connected transformers can
experience an extremely nonlinear voltage distribution along the high voltage winding, connected to the
oil–SF6 bushings, due to steep fronted wave impulses. Moreover transient oscillations within the GIS can
develop extremely high part winding resonance voltages in the transformer winding [29]. The need of
proving the VFTO withstand ability of insulating systems used in GIS adjacent equipment may not be
covered by standard lightning tests, due to the steepness of VFTO [35]. Performing of chopped impulse
tests or even special tests with chopped waveforms generated in SF6 atmosphere are possible solutions.
The specific needs are considered by the test conversion factor for the insulation co-ordination.
When a DS surge passes a bushing, a wave-front time of about 10 ns is extended to about 60 ns. This
reduces the voltage generated between turns or sections to 60 % - 80 % of that when a DS surge is
applied directly without a bushing [29].
3.3 Step 3 – Measures according to the insulation co-ordination

If the required withstand very fast transient overvoltage (Urw_VFTO) is equal or lower compared to the
insulation withstand strength of the equipment, no damping measures are necessary. If the required
withstand VFTO is higher compared to the insulation withstand strength of the equipment, it is necessary
to define measures reducing the risk of failures. There are two possibilities: an increase of the LIWV or a
mitigation of VFTO. The first choice is easy to realize, but cost-intensive. Nevertheless in some cases
this solution has advantages. For the Chinese 1100 kV project this method was used for the air insulated
busbar in case of Hybrid IS [5]. The second choice aims for mitigation of amplitudes of VFTO and finally
for a reduction of the effect of VFTO on the equipment.
For the different sources of VFTO and for the different equipment many mitigation methods are known.
One possible solution for damping of VFTO generated during DS switching in GIS is the integration of a
damping resistor. If a damping resistor is used for the DS at opening and closing, overvoltage can be
limited to values such as 1.3 pu. The damping of VFTO by integration of a damping resistor is a well
Page 22
proven technology. The technique can be implemented by means of an additional switching element to
perform the commutation or by adjusting the disconnector switch design to force the spark by the
electromagnetic forces to carry out the commutation process. Another way is to use other internal
damping measures. The mitigation of VFTOs is an active field of research. Several other methods have
been proposed and examined in the past, like ferrite rings or high frequency resonators [27]. The internal
damping of the VFTO influencing the highest frequency components is determined by the spark
resistance. Using a disconnector design with more than one contact zones could reduce the VFTO peak
by series connection of spark resistances.
The main techniques which can be used to mitigate the effects externally are summarized as follow [7]:
The main portion of the damping of the VFTO occurs by out-coupling at the transition to the overhead
line. This propagation of VTFO on air-insulated lines and busbars is lossy and results in a decrease of
the VFTO rise time. Therefore, a longer overhead line between GIS and transformer mitigate the VFTO
stress at the connected transformer. For instance, a 100 m longer overhead line results in a 10 % lower
VFTO peak at the transformer bushing. Normally, transformers can withstand the stress built up by steep
front waves. In critical cases, it might be necessary to install arrestors to protect tap changers against
very high frequency transient oscillations. The re-ignition overvoltages or overvoltages produced during
making of CB can be limited or avoided by a closing and / or opening resistor or controlled switching.
The effect of transient enclosure voltages (TEV) on enclosure can be minimized by a proper design and
arrangement of substation mats, by keeping ground leads as short and straight as possible in order to
minimize the inductance, by increasing the number of connections to ground, by introducing shielding to
prevent internally generated VFT from reaching the outside of the enclosure or by installing voltage
limiting arrestors where spacers must be employed. Correct cable connection procedures may minimize
interference. The coupling of radiated energy may be reduced by mounting control cables closely along
the enclosure supports and other grounded structures, by grounding cable shields at both ends by leads
as short as possible or by using optical coupling services. Voltage limiting devices may have to be
installed.
3.4 Disconnector with damping resistor

If the maximum VFTO in an UHV GIS system reach the insulation level of LIWV, it is necessary to
design and maybe to test considering the VFTO level or to suppress severe VFTO for the insulation co-
ordination. The damping of VFTO by integration of a damping resistor is a well proven technology.
Service experiences exist since more than 10 years [6, 30, 34]. Generally, the mitigation effect of the
damping resistor depends on the value of the resistance. To verify the mitigation effect, calculations and
measurements were performed for the Japanese and Chinese UHV projects.
Figure 16 shows a relation between resistance and VFTO peak for a typical GIS layout with 8 bays and a
double busbar scheme. The calculation is based on the assumption that re-striking occurs when the
trapped charge voltage at the load side and the voltage at the source side were -1 pu and +1 pu
respectively. Without damping resistor, the VFTO amplitude reaches a value of 2.49 pu. This exceeds
the LIWV according to the insulation co-ordination. In case of integration of a damping resistance higher
than 200 Ω, the VFTO amplitude can be suppressed below 1.5 pu. A damping resistance of more than
500 Ω mitigates the maximum VFTO amplitude to a level lower than 1.13 pu [32].
Page 23
Figure 16 VFTO in relation to the resistance of the damping resistor [32]
Typical calculated VFTO waveforms and the effect of the damping resistor on the VFTO amplitude are
shown in Figure 17. Consequently the resistance of the damping resistor could be chosen and defined
according to the maximum calculated VFTO and the required mitigation effect. A 110 Ω damping resistor
was used in the Italian 1000 kV project [22]. For the Chinese, Japanese and Korean UHV and EHV
projects, it was decided to use a 500 Ω damping resistor [22].
Figure 17 Calculated VFTO without damping resistor (left) and with 500 Ω damping
resistor (right) [32]
An example of gas insulated DS structure with damping resistor is shown in Figure 18. Figure 18
illustrates also the switching process for both opening and closing. At the beginning of the opening
operation, the moving contact starts to move and separates the main arcing contact Sm on the stationary
contact side. The bus-charging current interrupts. However, re-strikes occur because of the low dielectric
strength at that moment. As the distance between the two electrodes increases, the re-strike moves to
the part between the arcing electrode Sr of the resistor RDS and the moving contact. At this moment, the
damping resistor is inserted in series to the re-strikes, leading to a suppression of the VFTO. The re-
striking repeats [23]. During a closing operation the same principle works in reversed order.
Page 24
Figure 18 Working principle and structure of DS with damping resistor [23]
The damping resistor has to withstand the dielectric stress during striking. The highest voltage across
the resistor occurs shortly after the first pre-strike during closing operation. Therefore, it is necessary to
prove the voltage withstanding characteristic and the energy absorption capability of the resistor in case
of re-strikes and pre-strikes between the moving contact and the arcing electrode of the resistor. A
flashover across the resistor may lead to high VFTO comparable to a DS without damping resistor and
has to be avoided [30].
A higher resistance value leads to a higher voltage stress across the damping resistor and can reach
values in the range of 2 pu (see Figure 19) [23, 34]. Moreover the rate of rise of the voltage across the
resistor could be very high and depends on the set-up and the capacitances on the load and source
side. The rate of rise of the voltage across the resistor has to be considered especially during testing.
Figure 19 Calculated voltage across the damping resistor [23]
Page 25
The development of a fault by branching of the leader during DS switching depends on voltage, gap
distance, electrode geometry, contact speed, gas pressure and on the decay time of the voltage across
the damping resistor. The growth of the branching leader speeds up with increasing decay time constant.
As a consequence the probability for a flashover across the resistor increases. If these phenomena are
taken into account, it is necessary to adjust the damping of the discharge current through the resistor at
the time of striking in the test circuit according to actual systems. A proper design of the DS has shown
that in practice such faults can be eliminated. Nevertheless, the design has to be proven by tests. For
the test, it is important to consider the maximum load side capacitance as the worst case regarding
leader branching.
The absorption energy strongly depends on the load side capacitance and the voltage across the DS.
The required capacity of thermal energy absorption for the resistor could be calculated by summing up
all close-open operations containing a high number of strikes. For typical applications the required
energy absorption for a 500 Ω resistor ranges between 20 kJ and 35 kJ for one close-open operation
[34]. Mostly the thermal absorption capability is defined to withstand the thermal stress for one close-
open operation. The possibility to operate more than one close-open operation within some minutes
which corresponds to the thermal time constant of the damping resistor is estimated to be very short.
Page 26
4 SPECIAL REQUIREMENTS FOR TESTING

The bus-charging switching tests according to [1] are also applicable for UHV DS. The VFTO amplitude
has to be verified by measurements. Moreover it could be recommended to measure also the VFTO
amplitude with full trapped charge voltage at the load side. By this, a comparison of the required VFT
withstand voltage for the substation equipment with maximum VFTO amplitudes during testing and a
verification of the VFTO simulation method would be possible.
The same tests are also applicable for DS with a damping resistor. A verification of the VFTO peak and
rise time according to [1] is not possible, because of the mitigation effect. Verification possibilities are an
additional test without damping resistor or the simulation of the test voltages. The calculation can also be
used to check the validation of the simulation technique.
In case of DS with damping resistor, attention should be paid to disruptive discharges across the
damping resistor. Discharges across the resistor have to be avoided, because these discharges cause
high VFTO stress of the equipment. It is essential that disruptive discharges to earth or across the
resistor can be detected properly by adequate measuring or detecting equipment, for instance by a fast
transient measurement during the switching operations.
The specification for the damping resistor tests depends on the design, the system configuration and the
resistance. Special tests could be carried out according to the specification by agreement between
manufacturer and user. Japanese experiences on DS with damping resistor for the UHV project could be
used as a reference [22].
Especially the resistance, the capacitances of load and source side and the speed of the moving contact
affect the dielectric withstand capability and the thermal absorption capability. Therefore, a general
specification for these values is not helpful. In general, for the determination of the required energy
absorption capability one close-open operation has to be considered, except there is a special
specification for higher frequency of switching operations.
Page 27
5 CONCLUSIONS
VFTO simulation is a well-known instrument for the calculation of overvoltages needed for the insulation
co-ordination process. Because the accuracy of the simulation strongly depends on the quality of the
model of each individual component, it is important to verify the simulation results by measurements. If
the calculated VFTO level is higher compared to the withstand level, special measures to mitigate the
VFTO are required. Summarizing the different experiences a procedure with three steps is proposed,
following the general insulation co-ordination approach:
Step 2 Comparison of calculated VFTO values with LIWV level for the
 Co-ordination factor Kc
 Safety factor Ks
 Test conversion factor Ktc
Step 3 Definition of measures according to the insulation co-

ordination
The accuracy of a simulation depends on the quality of the model of each individual GIS component. In
order to achieve reasonable results even for time periods of some micro-seconds or for very complex
GIS structures, highly accurate models for each internal component and also for external components,
connected to the GIS, are necessary.
Because the generated transients depend strongly on the specific configuration and on the superposition
of travelling waves it is not possible to give generally admitted values, valid for each substation layout.
An accurate simulation for each substation, especially in the UHV range, is necessary for the insulation
co-ordination as basis for the decision making about possible countermeasures. Concluding it could be
necessary to design and maybe to test considering the VFTO level or to suppress severe VFTO.
Different approaches are known and used to determine the necessary measures according to the
insulation co-ordination.
As an indication the required withstand voltage depends on both the dielectric behaviour of the
equipment and the trapped charge behaviour of the DS. A low trapped charge voltage provides an
additional safety margin. As a result the withstand voltages could be different for the different equipment
(oil insulation, SF6 insulation, air insulation) and for a different DS design.
One possible solution for damping of VFTO in GIS is the integration of a damping resistor. This method
is a well proven technology. Service experiences exist since more than 10 years. In case of a DS with
damping resistor special requirements regarding the rate of rise of the voltage across the resistor, the
energy absorption and the branching behaviour must be taken into account. Especially the maximum
load side capacitance, the ratio between load-side and source-side capacitance and the maximum
trapped charge voltage according to the actual substation layout have to be considered.
Page 28
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Page 29
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Page 31

Very Fast Transient Overvoltages (VFTO) in Gas-Insulated UHV Substations

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Very Fast Transient Overvoltages (VFTO) in Gas-Insulated UHV Substations

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Very Fast Transient Overvoltages

Step 1 Calculation of VFTO (peak value and rise time)

Step 3 Definition of measures according to the insulation co-

CIGRÉ WG A3.22 Technical Requirements for Substation Equipment Exceeding

CIGRÉ WG B3.22 Technical Requirement for Substations Exceeding 800 kV

CIGRÉ WG C4.306 Insulation Coordination for UHV AC Systems

CIGRÉ Ad Hoc TF of AG D1.03 VFTO in UHV GIS Systems

All their contributions are gratefully acknowledged.

Nominated Expert Representatives

H. Ito (JP) SC A3 Convener Working Group A3.22 / A3.28

E. Kynast (DE) SC A3 Secretary SC A3

E. Zaima (JP) SC C4 Convener Working Group C4.306

LIST OF SYMBOLS AND ABBREVIATIONS

Hybrid IS Hybrid-insulated switchgear

switching operation in gas-insulated substations

Internal transient voltages External transient voltages

Figure 1 Classification of VFTO in gas-insulated substations

2 VERY FAST TRANSIENT OVERVOLTAGE (VFTO)

Figure 3 Dependency of rated withstand voltages and calculated VFTO on rated

Figure 4 Model network; left: case A, right: case B

3 GENERAL INSULATION CO-ORDINATION APPROACH

Step 1 Calculation of VFTO (peak value and rise time)

 System analysis (travelling wave computer simulation

 Co-ordination factor Kc (statistical distribution, inaccuracy of

Comparison of calculated required VFTO withstand voltage values with

Step 3 Definition of measures according to the insulation co-ordination

 No damping measure required

Trapped charge voltage

NO YES: UTCV = - 0.3 … - 1.0 pu

 Trapped charge behavior

Sided boxes refer to required input

Sided boxes refer to performed actions

Sided boxes refer to obtained results

Figure 9 Insulation co-ordination according to IEC 60071-1

3.1 Step 1 – VFTO Calculation

3.2 Step 2 – Required VFTO withstand level - Comparison with LIWV

3.2.1 CASE REVIEW

Table 1 VFTO calculation results for the Chinese pilot project

Damping resistor Yes Yes Yes Yes

 The absolute number of occurrence of overvoltage processes caused by disconnector switching

3.2.2 TRAPPED CHARGE VOLTAGE (TCV)

Trapped charge voltage (abs.) [pu]

Figure 11 Measured trapped charge voltage during DS switching under laboratory

3.2.3 THE EFFECT OF VFTO ON GIS EQUIPMENT

Figure 12 Principal voltage-time characteristic of SF 6 [2]

Configuration Voltage-time Characteristic

Triple junction (TJ)

Figure 13 Voltage-time characteristics of typical homogeneous and inhomogeneous

a) VFTO stress with small

Figure 14 Composite stress with different FT and VFT components [2]

3.2.4 THE EFFECT OF VFTO ON OTHER EQUIPMENT

3.3 Step 3 – Measures according to the insulation co-ordination

3.4 Disconnector with damping resistor

Figure 16 VFTO in relation to the resistance of the damping resistor [32]

Figure 18 Working principle and structure of DS with damping resistor [23]

Figure 19 Calculated voltage across the damping resistor [23]

4 SPECIAL REQUIREMENTS FOR TESTING

Step 1 Calculation of VFTO (peak value and rise time)

Step 3 Definition of measures according to the insulation co-

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