PD - 97249A

DIGITAL AUDIO MOSFET

IRFI4212H-117P
Features Key Parameters g
Ÿ Integrated half-bridge package VDS 100 V
Ÿ Reduces the part count by half RDS(ON) typ. @ 10V 58 m:
Ÿ Facilitates better PCB layout Qg typ. 12 nC
Ÿ Key parameters optimized for Class-D Qsw typ. 6.9 nC
audio amplifier applications RG(int) typ. 3.4 Ω
Ÿ Low RDS(ON) for improved efficiency TJ max 150 °C
Ÿ Low Qg and Qsw for better THD and
improved efficiency
Ÿ Low Qrr for better THD and lower EMI
Ÿ Can delivery up to 150W per channel into
4Ω load in half-bridge configuration
amplifier
Ÿ Lead-free package

TO-220 Full-Pak 5 PIN

G1, G2 D1, D2 S1, S2

Description Gate Drain Source
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It
consists of two power MosFET switches connected in half-bridge configuration. The latest process is used
to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery,
and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors
such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and
reliable device for Class D audio amplifier applications.
Absolute Maximum Ratings g
Parameter Max. Units
VDS Drain-to-Source Voltage 100 V
VGS Gate-to-Source Voltage ±20
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 11 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 6.8
IDM Pulsed Drain Current c 44
PD @TC = 25°C Power Dissipation f 18 W
PD @TC = 100°C Power Dissipation f 7.0
Linear Derating Factor 0.14 W/°C
EAS Single Pulse Avalanche Energyd 41 mJ
TJ Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds
300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lbxin (1.1Nxm)
Thermal Resistance g
Parameter Typ. Max. Units
RθJC Junction-to-Case f ––– 7.1 °C/W
RθJA Junction-to-Ambient (free air) ––– 65

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IRFI4212H-117P
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) g
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.09 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 58 72.5 mΩ VGS = 10V, ID = 6.6A e
VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -11 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 100V, VGS = 0V
––– ––– 250 VDS = 100V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -20V
gfs Forward Transconductance 11 ––– ––– S VDS = 50V, ID = 6.6A
Qg Total Gate Charge ––– 12 18
Qgs1 Pre-Vth Gate-to-Source Charge ––– 1.6 ––– VDS = 80V
Qgs2 Post-Vth Gate-to-Source Charge ––– 0.71 ––– nC VGS = 10V
Qgd Gate-to-Drain Charge ––– 6.2 ––– ID = 6.6A
Qgodr Gate Charge Overdrive ––– 3.5 ––– See Fig. 6 and 15
Qsw Switch Charge (Qgs2 + Qgd) ––– 6.9 –––
RG(int) Internal Gate Resistance ––– 3.4 ––– Ω
td(on) Turn-On Delay Time ––– 4.7 ––– VDD = 50V, VGS = 10Ve
tr Rise Time ––– 8.3 ––– ID = 6.6A
td(off) Turn-Off Delay Time ––– 9.5 ––– ns RG = 2.5Ω
tf Fall Time ––– 4.3 –––
Ciss Input Capacitance ––– 490 ––– VGS = 0V
Coss Output Capacitance ––– 64 ––– pF VDS = 50V
Crss Reverse Transfer Capacitance ––– 34 ––– ƒ = 1.0MHz, See Fig.5
Coss eff. Effective Output Capacitance ––– 110 ––– VGS = 0V, VDS = 0V to 80V
LD Internal Drain Inductance ––– 4.5 ––– Between lead, D

nH 6mm (0.25in.)
G
LS Internal Source Inductance ––– 7.5 ––– from package
S
and center of die contact

Diode Characteristics g
Parameter Min. Typ. Max. Units Conditions
IS @ TC = 25°C Continuous Source Current ––– ––– 11 MOSFET symbol
(Body Diode) A showing the
ISM Pulsed Source Current ––– ––– 44 integral reverse
(Body Diode)c p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 6.6A, VGS = 0V e
trr Reverse Recovery Time ––– 36 54 ns TJ = 25°C, IF = 6.6A
Qrr Reverse Recovery Charge ––– 56 84 nC di/dt = 100A/µs e

Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 1.9mH, RG = 25Ω, IAS = 6.6A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ Rθ is measured at TJ of approximately 90°C.
… Specifications refer to single MosFET.

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 IRFI4212H-117P
100 100
VGS VGS
TOP 15V TOP 15V
12V 12V
10V 10V
ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

9.0V 9.0V
8.0V 8.0V
7.0V 7.0V
BOTTOM 6.0V BOTTOM 6.0V

6.0V
10 10
6.0V

≤60µs PULSE WIDTH ≤60µs PULSE WIDTH

Tj = 25°C Tj = 150°C
1 1
0.1 1 10 100 0.1 1 10 100
V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 2.5
ID = 6.6A
R DS(on) , Drain-to-Source On Resistance VGS = 10V
ID, Drain-to-Source Current (A)

2.0
10
(Normalized)

T J = 150°C
1.5
T J = 25°C
1
1.0
VDS = 50V
≤60µs PULSE WIDTH
0.1 0.5
3 4 5 6 7 8 9 -60 -40 -20 0 20 40 60 80 100 120 140 160

VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature

10000 12.0
VGS = 0V, f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
ID= 6.6A
C rss = C gd 10.0 VDS= 80V
VGS, Gate-to-Source Voltage (V)

C oss = C ds + C gd VDS= 50V

VDS= 20V
C, Capacitance (pF)

1000 8.0
Ciss
6.0
Coss
100 4.0
Crss

2.0

10 0.0
1 10 100 0 2 4 6 8 10 12 14
VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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IRFI4212H-117P
100 1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100

ID, Drain-to-Source Current (A)

ISD, Reverse Drain Current (A)

T J = 150°C
10 10
100µsec

1
T J = 25°C

1 0.1 1msec

10msec
0.01 Tc = 25°C
Tj = 150°C
VGS = 0V Single Pulse DC
0.1 0.001
0.0 0.5 1.0 1.5 1 10 100 1000
VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area
12 4.5

VGS(th) , Gate Threshold Voltage (V)

10 4.0
ID, Drain Current (A)

8 3.5

ID = 250µA
6 3.0

4 2.5

2 2.0

0 1.5
25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150
T J , Junction Temperature (°C) T J , Temperature ( °C )
Fig 9. Maximum Drain Current vs. Junction Temperature Fig 10. Threshold Voltage vs. Temperature

10

D = 0.50

0.20
Thermal Response ( Z thJC )

1 0.10
0.05
0.02
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.1 0.01 τJ τC 0.7942 0.000208
τJ τ
τ1 τ2
1.3536 0.001434
τ3 τ4
τ1 τ2 τ3 τ4 2.2345 0.100647
Ci= τi/Ri 2.7177 1.9398
SINGLE PULSE Ci i/Ri
0.01 ( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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 IRFI4212H-117P
200 175
RDS(on), Drain-to -Source On Resistance (m Ω) ID

EAS , Single Pulse Avalanche Energy (mJ)

ID = 6.6A
175 150 TOP 1.2A
2.1A
125 BOTTOM 6.6A
150

T J = 125°C 100
125
75
100
50

75 T J = 25°C
25

50 0
4 5 6 7 8 9 10 11 12 13 14 15 16 25 50 75 100 125 150

VGS, Gate -to -Source Voltage (V) Starting T J , Junction Temperature (°C)
Fig 13a. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage

V(BR)DSS
15V
tp

L DRIVER
VDS

RG D.U.T +
V
- DD
IAS A
VGS
20V
tp 0.01Ω
I AS

Fig 13b. Unclamped Inductive Test Circuit Fig 13c. Unclamped Inductive Waveforms

LD
VDS VDS
90%
+
VDD -

D.U.T 10%
VGS VGS
Pulse Width < 1µs
Duty Factor < 0.1% td(on) tr td(off) tf

Fig 14a. Switching Time Test Circuit Fig 14b. Switching Time Waveforms
Id
Vds

Vgs

L
VCC
DUT Vgs(th)
0
1K

Qgs1 Qgs2 Qgd Qgodr

Fig 15a. Gate Charge Test Circuit Fig 15b Gate Charge Waveform
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IRFI4212H-117P
TO-220 Full-Pak 5-Pin Package Outline, Lead-Form Option 117
(Dimensions are shown in millimeters (inches))

TO-220 Full-Pak 5-Pin Part Marking Information

14

TO-220AB Full-Pak 5-Pin package is not recommended for Surface Mount Application.

Data and specifications subject to change without notice.

This product has been designed for the Consumer market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/06
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