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Abstract
The advanced negative thermal expansion (NTE) properties of the ultrafine-grained
Mn3 (Cu1−x Gex )N compound bulk have been reported. The developed preparation route has
reduced the fabrication time by more than ten times in contrast to previous studies. As
compared with the coarse-grained compound bulk, the NTE start temperature of the ultrafine
Mn3 (Cu1−x Gex )N (x = 0.5) bulk is reduced to 250 K, and the coefficient of negative thermal
expansion (CNTE) reaches −23.7 × 10−6 K−1 , which is remarkably improved. It is found that
the nitrogen content in the starting manganese nitride also has significant effects on the NTE
start temperature, operating temperature range and CNTE.
(Some figures in this article are in colour only in the electronic version)
As a particular type of functional materials, negative thermal been reported in the literature so far [2, 3, 5]. The Ge-doped
expansion (NTE) materials can be used to compensate or Mn3 CuN compounds reveal the NTE property around room
control the conventional (positive) thermal expansion by means temperature. With the increase in Ge addition, the Néel
of forming zero thermal expansion composites, which have temperature and the NTE operation temperature range of this
the potential for wide application in the fields of high- compound increase, while the absolute value of CNTE and the
precision optical mirrors, refractive index gratings, printed magnetization decrease. To obtain the low-temperature NTE
circuit boards, heat sinks, etc [1]. The recent discoveries of property, as well as the broader NTE operation temperature
excellent NTE properties in antiperovskite-structured Mn3 AN range, Huang et al attempted to substitute Ge with Nb
(A = Cu, Zn, etc) doped with Ge, Sn or Ga [2–4] have and Si in Mn3 (Cu1−x Gex N) (x = 0.4) [6, 7]. However,
attracted considerable interest. These kinds of compounds even with the maximum addition of Nb as 0.2 at%, the
have the advantages of being uniquely metallic, isotropic, absolute CNTE of the compound had a fairly low value of
having adjustable coefficient of NTE (CNTE) and operating 5 × 10−6 K−1 . It is worth noting that to achieve the low-
temperature range (T ) [2, 3] in comparison with the known temperature NTE, the broad NTE operation temperature range
NTE materials. and the large CNTE value, the method of Ge substitution
Among the Mn3 CuN-based NTE materials, the Ge-doped is limited by the type and the content of the doping
Mn3 CuN compounds exhibit the best NTE property that has elements.
2
J. Phys. D: Appl. Phys. 42 (2009) 122004 Fast Track Communication
3
J. Phys. D: Appl. Phys. 42 (2009) 122004 Fast Track Communication
4
J. Phys. D: Appl. Phys. 42 (2009) 122004 Fast Track Communication