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High voltage discharge, High speed switching,

Low Noise (−60V, −3A)


2SA2072

zFeatures zDimensions (Unit : mm)


1) High speed switching. ( tf : Typ. : 20ns at IC = −3A)
2) Low saturation voltage, typically. CPT3
(Typ. : −200mV at IC = −2.0A, IB = −200mA) (SC-63)
<SOT-428>
3) Strong discharge power for inductive load and capacitance load.
4) Low Noise.
5) Complements the 2SC5825.

zApplications
High speed switching, Low noise (1) Base
(2) Collector
(3) Emitter
zStructure Abbreviated symbol : A2072
PNP silicon epitaxial planar transistor

zPackaging specifications
Package Taping
Type Code TL
Basic ordering unit (pieces) 2500
2SA2072

zAbsolute maximum ratings (Ta=25°C)


Parameter Symbol Limits Unit
Collector-base voltage VCBO −60 V
Collector-emitter voltage VCEO −60 V
Emitter-base voltage VEBO −6 V
DC IC −3 A
Collector current ∗1
Pulsed ICP −6 A
∗2
1.0 W
Power dissipation PC ∗3
10.0 W
Junction temperature tj 150 °C
Range of storage temperature tstg −55 to 150 °C
∗1 Pw=100ms
∗2 Ta=25°C
∗3 Tc=25°C

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c 2009 ROHM Co., Ltd. All rights reserved. 1/3 2009.02 - Rev.B
2SA2072 Data Sheet

zElectrical characteristics (Ta=25°C)


Parameter Symbol Min. Typ. Max. Unit Condition
Collector-emitter breakdown voltage BVCEO −60 − − V IC = −1mA
Collector-base breakdown voltage BVCBO −60 − − V IC = −100µA
Emitter-base breakdown voltage BVEBO −6 − − V IE = −100µA
Collector cut-off current ICBO − − −1.0 µA VCB = −20V
Emitter cut-off current IEBO − − −1.0 µA VEB = −4V
∗1 IC = −2A
Collector-emitter saturation voltage VCE (sat) − −200 −500 mV
IB = −0.2A
VCE = −2V
DC current gain hFE 120 − 270 −
IC = −100mA
∗1
VCE = −10V
Transistor frequency fT − 180 − MHz IE =100mA
f =10MHz
VCB = −10V
Collector output capacitance Cob − 50 − pF IE =0mA
f =1MHz
Turn-on time ton ∗2 − 20 − ns IC = −3A
∗2 IB1 = −300mA
Storage time tstg − 150 − ns IB2 =300mA
Fall time tf ∗2 − 20 − ns VCC −25V
∗1 Non repetitive pulse
∗2 See switching characteristics measurement circuits

zhFE RANK
Q
120−270

zElectrical characteristics curves

200 10 1000
IB=1000µA VCE=2V Ta=25°C
COLLECTOR CURRENT : IC (mA)

900µA
COLLECTOR CURRENT : IC(A)

VCE=5V
DC CURRENT GAIN : hFE

160
800µA
1 VCE=3V
700µA 100
120 VCE=2V
600µA
25°C
500µA
125°C −40°C
80 400µA 0.1 10
300µA

40 200µA
100µA
0.01 1
0µA 0 0.1 0.2 0.3 0.4 0.50.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
0 0.001 0.01 0.1 1 10
0 1 2 3 4 5
BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (A)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter propagation Fig.3 DC current gain
Fig.1 Typical output characteristics
characteristics vs.collector current ( Ι )

1000 1 1
COLLECTOR SATURATION VOLTAGE : VCE(sat)(V)

COLLECTOR SATURATION VOLTAGE : VCE(sat)(V)

Ta=25°C Ta=25°C IC/Ib=10/1


125°C 125°C
DC CURRENT GAIN : hFE

25°C

100 0.1
−40°C Ic/Ib=20/1
25°C
0.1
Ic/Ib=10/1
−40°C
10 0.01

1 0.001 0.01
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10

COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A)

Fig.4 DC current gain Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage
vs.collector current ( ΙΙ ) vs.collector current ( Ι ) vs.collector current ( ΙΙ )

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c 2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.02 - Rev.B
2SA2072 Data Sheet
BASE EMITTER SATURATION VOLTAGE : VBE(sat)(V)

10 1000 1000

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)


IC/Ib=10/1 Ta=25°C Ta=25°C

TRANSITION FREQUENCY : fT (MHz)


VCE=10V f=1MHz

100 100

1 −40°C

25°C 10 10
125°C

0.1 1 1
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.1 1 10 100
COLLECTOR CURRENT : IC (A) EMITTER CURRENT : IE (A) COLLECTOR TO BASE VOLTAGE : VCB (V)

Fig.7 Base-emitter saturation voltage Fig.8 Transition frequency Fig.9 Collector output capacitance
vs. collector current

1000
Ta=25°C
VCC=25V
IC/IB=10/1
tstg

tf
SW (ns)

ton
100

10
0.01 0.1 1 10
COLLECTOR CURRENT : IC (A)

Fig.10 Switching Time

zSwitching characteristics measurement circuits

RL=8.3Ω

IB1 IC
VIN PW

VCC −25V
IB2
PW 50µs
DUTY CYCLE 1%

IB2

IB1
BASE CURRENT
WAVEFORM ton tstg tf
90%

IC
COLLECTOR CURRENT 10%
WAVEFORM

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c 2009 ROHM Co., Ltd. All rights reserved. 3/3 2009.02 - Rev.B
Appendix

Notes
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