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Chemical Bonding and Single Crystal Growing of ADP
Chemical Bonding and Single Crystal Growing of ADP
ABSTRACT
From the viewpoint of chemical bonding, we show that the oriented distribution of chemical bonding of H2 PO4−
ion can dominate the growth of ammonium dihydrogen phosphate (ADP) single crystals. The effective distribu-
tion coefficient of chemical bonding is proposed to describe the modification of chemical bonds between growth
units during crystallization process, which is the intrinsic origin of morphology evolution of ADP crystals under
different pH values. From both theoretical calculations and experimental observations, we demonstrate that the
growth of ADP crystals along the a- and b-directions depends on the chemical bonding conditions of hydrogen
bonds between H2 PO4− groups during the crystallization, which leads to the morphology transformation of ADP
ARTICLE
from the podgy to slender under different pH values.
KEYWORDS: ADP, Chemical Bonding, H2 PO4− Groups, pH Values.
H2 PO4− and H3 PO4 can generate different aggregations, length of 1.414 Å occur between two adjacent PO4 groups,
including H2 PO4− , H4 (PO4 22− , and H5 (PO4 2− , the chem- which are perpendicular to the c-axis. Therefore, the
ical bonding conditions of which dominate the growth anionic phosphate groups bonded together by a 3D bond-
morphology of ADP crystals. The calculated morpholo- ing network dominate the crystal chemistry of ADP. When
gies of ADP crystals are in a good agreement with our ADP crystallizes from the solution, the bonding interac-
experimental observations, confirming the dominant role tion between H2 PO4− and adjacent ions is the dominant
of chemical bonding during the growth process. factor for the crystallization process. H2 PO4− groups are
selected as central ions. When central ions incorporate into
2. THEORETICAL BASIS the crystal lattice, the bonding number N of each central
ion with symmetry equivalent positions is constant. The
Crystal growth can be considered as the forming and total chemical bonding capability i Ni × si per molecule
breaking of bonds between crystallizing particles such is determined by the Brown’s Rules of Valence.18 Accord-
as atoms, ions or molecules. When the crystal crystal- ing to the symmetry operators within the crystallographic
lizes from a growth system, the growth units gradually frame, the chemical bonding capability contributions per
come close together by the interactions with neighboring molecule are therefore quantitatively apportioned between
atoms and enter the crystal lattices along special bond- the interplanar and internal planes and written as
ing directions. The crystallization driving force at the
growth interface is directly proportional to the chemical
Nti × si + Nni × si = Ni × si (1)
bonding capability per molecule. Therefore, growth habits i i i
of crystalline materials depend on the detailed crystallo-
graphic structure and bonding interactions between con- where Nti is the total number of i type bonds per molecule
within a selected slice, Nni is the total number of i type
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2
Interface
2
Bulk crystal
1 3
1 3
Fig. 1. The relationship between of chemical bonding characteristics and crystal growth habit. Number 1, 2 and 3 describe the discrepancies in
chemical bonding conditions of growth unit situated in bulk crystal and interface, which further lead to anisotropy of crystal growth.
α Bond
H β Bond Chain a (b)
N
O
P c
β Bond
γ Bond
α Bond Chain
Fig. 2. Schematic drawing of chemical bonds formed between constituent units for ADP crystals. bonds are HN −O covalent bonds with a longer
nitrogen-to-oxygen length of 3.169 Å, bonds are also HN −O covalent bonds with a shorter nitrogen-to-oxygen length of 2.915 Å, bonds are the
HO O hydrogen bonds with bond length of 1.414 Å.
contribution i Ni∗ × si per molecule may be expressed The
criterion is thought as an important habit factor to
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as an average of contributions from the face, edges and reflect the normal growth rate of every plane, that is, the
corners, then planes having smaller
values may emerge at the end
of growth while the planes having bigger
values vanish
∗ face edge
Ni × si = Delivered
Ni ×by si + N
Publishing
i × s
Technology
i
finally. According to the structural dominance of central
to: Northeastern University Campus
i i i
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and2015
their04:45:51
sensitivity for environments, the discrepan-
Copyright: American cies in chemical
Scientific bonding can be obtained. Therefore,
Publishers
+ Nicorner × si fj (2) can describe the shape evolution of crystalline materials.
i j
Fig. 3. SEM images of ADP crystallites in solution with different pH values: (A) pH = 6.42; (B) pH = 6.05; (C) pH = 5.65; (D) pH = 4.68;
(E) pH = 4.24; (F) pH = 3.97; (G) pH = 3.83; (H) pH = 3.65; (I) pH = 3.43; (J) pH = 3.30; (K) pH = 1.64; (L) pH = 1.15, scale bar = 200 m.
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them may exist in equilibrium with each other, the succes- through two hydrogen bonds, they also can incorporate
sive dissociation and complex equilibriums in solution are into the crystal lattice as growth units and hold the sim-
proposed as follows: ilar chemical bonding to H2 PO4− ions. Nevertheless, in
the bonding process of H4 (PO4 22− ions, there exists the
H3 PO4 H+ + H2 PO4− (5) H4 (PO4 22− ion in order to
Delivered by Publishing Technology to:breaking of one University
Northeastern bond within
Campus
− + IP: 50.50.154.8 On:
H2 PO4 H + HPO 4
2−
(6)Sat, 17
formOct 2015
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bond with adjacent phosphate groups, and
Copyright: American Scientific
then the Publishers
net increase of chemical bonding is four bonds
H2 PO4− + H2 PO4− H4 PO4 22− (7) and four bonds. The two typical bonding processes are
H2 PO4− + H3 PO4 H5 PO4 2− (8) schematically given in Figure 6.
The effective distributions of chemical bonding per
It is obvious that the chemical equilibriums in Eqs. (5) molecule between the interplanar and internal planes for
and (6) move to the left side with decreasing pH, which different crystal faces in ADP crystals can be calculated
implies a tendency for the complex reaction to progress by Eqs. (2) and (3). Furthermore,
values of both typical
A B
pH = 6.42
pH = 3.83
pH = 3.43
pH = 1.15
Fig. 5. Scheme of the detailed effects of pH on the characteristics of anionic species in solution, and further on the morphology evolution of ADP
crystallites. (A) Experimental observations under the corresponding conditions taken from Figure 3. Theoretical growth forms of ADP crystallites.
(Double blue arrows indicate the inhibiting impacts brought by the inhibitors on the {101} faces, which leads to the relative expansion of {100} faces
represented by brown arrows.)
NH4+
H2PO4−
γ hydrogen bond
ΔNγ = 2
ΔNγ = 0
Fig. 6. Schematic representation of the habit evolution of ADP crystallites under different chemical bonding conditions between central H2 PO4−
anions: (1) central H2 PO4− anions existing as monomers and dimers in growth solutions, respectively; (2) hydrogen chemical bonding between
central H2 PO4− anions ( N : the net increase of hydrogen bonds); (3) chemical bonding of central H2 PO4− anions in crystal lattice; (4) growth
habits of ADP crystallites obtained by theoretical calculation.
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bonding processes were also obtainedIP: by
50.50.154.8
Eq. (4) andOn: Sat, 17
listed OctI. 2015
Table 04:45:51
Calculated
values of different crystal planes of ADP single
in Table I. The calculated results showCopyright: American
that {100} and Scientific
crystal. Publishers
{101} planes are still predominant for ADP crystals under Growth unit (hkl) plane
hkl
hkl /
100
two conditions, while their morphological importance has
−
a significant change. When H2 PO4− ions as dominant H2 PO4 (100) 0.389 1
(101) 0.360 0925
growth units incorporate into the crystal lattice, the distri-
(001) 0.610 1568
bution i Nni ∗ within {101} planes is smaller than that (110) 0.780 2
of {100} planes. It means that {101} planes have a larger (112) 0.610 1568
morphology importance and finally the habit of ADP crys- H4 (PO4 22− (100) 0.332 1
2− (101) 0.417 1256
tallites inclines to the podgy. When H4 P2 O8 dimers enter
(001) 0.667 2009
the lattice site, the reform of hydrogen bonds in the ab (110) 0.665 2003
plane retards the growth along the a- or b-directions. (112) 0.667 2009
Therefore, the
value for {100} planes decreases and cor-
respondingly increases for {101} planes, which leads to
the transition of crystal habits from the podgy to slen- In contrast, anionic species H5 (PO4 2− can more readily
der with decreasing pH from 3.83 to 3.43. The theo- adsorb onto this surface. Moreover, the steric conformation
retical predictions obtained are well consistent with the of H5 (PO4 2− ion is similar to that of the two-phosphate
observations. cluster expected for the pure ADP growth, therefore, they
When the pH value further decreases to 1.15, there would have a comparative ability to occupy the sites
is an amount of phosphoric acid in high acid solution, of growth units through the hydrogen bonding interac-
which would be favored to form H5 (PO4 2− ions accord- tions with the exposed O-H bonds. These that act as
ing to the chemical equilibrium in Eq. (8). Since there inhibiting agents are known to preferentially adsorb in
exist the differences in the charge and stoichiometry the active sites (such as corner or ledge sites) of (101)
between H5 (PO4 2− and H4 (PO4 22− , H5 (PO4 2− ions as surface more strongly than others. Consequently the nor-
inhibitors have an influence on the growth habit. In terms mal growth of {101} planes would be slowed. However,
of the characteristics of surface structure of ADP crys- when pH increases to 6.42, although there are some lim-
tals in aqueous solution,27 the positively charged {101} ited HPO42− ions available in the solution, the effect of
+
surface with only NH4 ions provides a large barrier to HPO42− ions is relatively pronounced in view of the higher
the adsorption of positively charged metal ion impurities. charge than that of H5 (PO4 2− ions. Therefore, both of
ARTICLE
National Natural Science Foundation of China (grant 20. J. Leroudier, J. Zaccaro, M. Ildefonso, S. Veesler, J. Baruchel, and
A. Ibanez, Cryst. Growth Des. 11, 2592 (2011).
nos. 51125009, 50872016 and 20973033), National Nat- 21. I. Pritula, O. Bezkrovnaya, M. Kolybayeva, A. Kosinova,
ural Science Foundation for Creative Research Group D. Sofronov, V. Tkachenko, and V. Tsurikov, Mater. Chem. Phys.
(grant nos. 20921002 and 21221061)
Delivered by Publishing andTechnology
Hundred to: Northeastern
129, 777 (2011).University Campus
Talents Program of Chinese Academy of Sciences is 22. M. K.
IP: 50.50.154.8 On: Sat, 17 Oct Cerreta
2015 and K. A. Berglund, J. Cryst. Growth 84, 577
04:45:51
acknowledged. (1987).Publishers
Copyright: American Scientific
23. M. Cherif, A. Mgaidi, N. Ammar, G. Vallée, and W. Fürst, J. Solu-
tion Chem. 29, 255 (2000).
References and Notes 24. C. M. Preston and W. A. Adams, J. Phys. Chem. 83, 814 (1979).
25. C. W. Childs, J. Phys. Chem. 73, 2956 (1969).
1. J. Liu, H. Xia, D. Xue, and L. Lu, J. Am. Chem. Soc. 131, 12086 26. K. Sangwal and E. Olczyk, Cryst. Res. Technol. 25, 65 (1990).
(2009). 27. J. Arsic, M. F. Reedijk, A. J. R. Sweegers, Y. S. Wang, and E. Vlieg,
2. C. Yan and D. Xue, Adv. Mater. 20, 1055 (2008). Phys. Rev. B 64, 2334021 (2001).