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 FGH40N60SFD — 600 V, 40 A Field Stop IGBT
March 2015

FGH40N60SFD
600 V, 40 A Field Stop IGBT
Features General Description
• High Current Capability Using novel field stop IGBT technology, Fairchild’s field stop
• Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A IGBTs offer the optimum performance for solar inverter, UPS,
welder, microwave oven, telecom, ESS and PFC applications
• High Input Impedance
where low conduction and switching losses are essential.
• Fast Switching
• RoHS Compliant

Applications
• Solar Inverter, UPS, Welder, PFC, Microwave Oven, Tele-
com, ESS

E C
C
G

COLLECTOR
(FLANGE) E

Absolute Maximum Ratings

Symbol Description Ratings Unit
VCES Collector to Emitter Voltage 600 V
Gate to Emitter Voltage ±20
VGES V
Transient Gate-to-Emitter Voltage ±30
Collector Current @ TC = 25oC 80 A
IC
Collector Current @ TC = 100oC 40 A
ICM (1) Pulsed Collector Current @ TC = 25oC 120 A
o
Maximum Power Dissipation @ TC = 25 C 290 W
PD
Maximum Power Dissipation @ TC = 100oC 116 W
o
TJ Operating Junction Temperature -55 to +150 C
o
Tstg Storage Temperature Range -55 to +150 C
Maximum Lead Temp. for soldering oC
TL 300
Purposes, 1/8” from case for 5 seconds

Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature

Thermal Characteristics
Symbol Parameter Typ. Max. Unit
o
RθJC(IGBT) Thermal Resistance, Junction to Case - 0.43 C/W
o
RθJC(Diode) Thermal Resistance, Junction to Case - 1.45 C/W
o
RθJA Thermal Resistance, Junction to Ambient - 40 C/W

©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGH40N60SFD Rev.1.5
 FGH40N60SFD — 600 V, 40 A Field Stop IGBT
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FGH40N60SFDTU FGH40N60SFD TO-247 Tube N/A N/A 30

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 μA 600 - - V
ΔBVCES Temperature Coefficient of Breakdown
VGE = 0 V, IC = 250 μA - 0.6 - V/oC
/ ΔTJ Voltage
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 μA
IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 250 μA, VCE = VGE 4.0 5.0 6.5 V
IC = 40 A, VGE = 15 V - 2.3 2.9 V
VCE(sat) Collector to Emitter Saturation Voltage IC = 40 A, VGE = 15 V,
- 2.5 - V
TC = 125oC

Dynamic Characteristics
Cies Input Capacitance - 2110 - pF
VCE = 30 V, VGE = 0 V,
Coes Output Capacitance - 200 - pF
f = 1 MHz
Cres Reverse Transfer Capacitance - 60 - pF

Switching Characteristics
td(on) Turn-On Delay Time - 25 - ns
tr Rise Time - 42 - ns
td(off) Turn-Off Delay Time VCC = 400 V, IC = 40 A, - 115 - ns
tf Fall Time RG = 10 Ω, VGE = 15 V, - 27 54 ns
Inductive Load, TC = 25oC
Eon Turn-On Switching Loss - 1.13 - mJ
Eoff Turn-Off Switching Loss - 0.31 - mJ
Ets Total Switching Loss - 1.44 - mJ
td(on) Turn-On Delay Time - 24 - ns
tr Rise Time - 43 - ns
td(off) Turn-Off Delay Time VCC = 400 V, IC = 40 A, - 120 - ns
tf Fall Time RG = 10 Ω, VGE = 15 V, - 30 - ns
Inductive Load, TC = 125oC
Eon Turn-On Switching Loss - 1.14 - mJ
Eoff Turn-Off Switching Loss - 0.48 - mJ
Ets Total Switching Loss - 1.62 - mJ
Qg Total Gate Charge - 120 - nC
VCE = 400 V, IC = 40 A,
Qge Gate to Emitter Charge - 14 - nC
VGE = 15 V
Qgc Gate to Collector Charge - 58 - nC

©2008 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FGH40N60SFD Rev.1.5
 FGH40N60SFD — 600 V, 40 A Field Stop IGBT
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max Unit

TC = 25oC - 1.95 2.6
VFM Diode Forward Voltage IF = 20 A V
TC = 125oC - 1.85 -
TC = 25oC - 45 -
trr Diode Reverse Recovery Time ns
TC = 125oC - 140 -
IF =20 A, diF/dt = 200 A/μs
TC = 25oC - 75 -
Qrr Diode Reverse Recovery Charge nC
o
TC = 125 C - 375 -

©2008 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FGH40N60SFD Rev.1.5
 FGH40N60SFD — 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

120 120
o o
TC = 25 C TC = 125 C
20V
20V 15V
100 15V 100 12V
Collector Current, IC [A]

Collector Current, IC [A]

80 80
12V

60 60

10V
40 40
10V
20 20
VGE = 8V VGE = 8V
0 0
0.0 1.5 3.0 4.5 6.0 0.0 1.5 3.0 4.5 6.0
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics

Characteristics
80 120
Common Emitter Common Emitter
VCE = 20V
VGE = 15V
o
o TC = 25 C
Collector Current, IC [A]

TC = 25 C
Collector Current, IC [A]

60 o TC = 125 C
o
TC = 125 C
80

40

40
20

0 0
0 1 2 3 4 6 8 10 12 13
Collector-Emitter Voltage, VCE [V] Gate-Emitter Voltage,VGE [V]

Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
4.0
Common Emitter 20
Common Emitter
VGE = 15V
Collector-Emitter Voltage, VCE [V]

o
Collector-Emitter Voltage, VCE [V]

TC = -40 C
3.5
80A 16

3.0
12
2.5
40A
8
2.0

IC = 20A 80A
40A
1.5 4
IC = 20A

1.0 0
25 50 75 100 125 4 8 12 16 20
o
Case Temperature, TC [ C] Gate-Emitter Voltage, VGE [V]

©2008 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FGH40N60SFD Rev.1.5
 FGH40N60SFD — 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics

Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE
20 20
Common Emitter Common Emitter
o o
Collector-Emitter Voltage, VCE [V]

TC = 25 C TC = 125 C

Collector-Emitter Voltage, VCE [V]

16 16

12 12

8 8

80A 40A
40A 80A
4 4
IC = 20A
IC = 20A

0 0
4 8 12 16 20 4 8 12 16 20
Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]

Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics

5000 15
Common Emitter Common Emitter
VGE = 0V, f = 1MHz o
TC = 25 C
Gate-Emitter Voltage, VGE [V]

o
4000 Ciss TC = 25 C 12
200V
Capacitance [pF]

Vcc = 100V 300V

3000 9

Coss
2000 6

1000 3
Crss

0 0
0.1 1 10 30 0 50 100 150
Collector-Emitter Voltage, VCE [V] Gate Charge, Qg [nC]

Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.

Gate Resistance
400 200

100 10μs
100
Collector Current, Ic [A]

Switching Time [ns]

10 100μs

1ms
tr
10 ms
1
DC
Single Nonrepetitive Common Emitter
VCC = 400V, VGE = 15V
Pulse TC = 25oC td(on)
0.1 IC = 40A
Curves must be derated o
linearly with increase TC = 25 C
in temperature o
TC = 125 C
0.01 10
1 10 100 1000 0 10 20 30 40 50
Collector-Emitter Voltage, VCE [V] Gate Resistance, RG [Ω]

©2008 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FGH40N60SFD Rev.1.5
 FGH40N60SFD — 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics

Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.
Gate Resistance Collector Current
5500 500
Common Emitter Common Emitter
VCC = 400V, VGE = 15V VGE = 15V, RG = 10Ω
o
IC = 40A TC = 25 C
o o
1000 TC = 25 C TC = 125 C

Switching Time [ns]

Switching Time [ns]

o tr
TC = 125 C
td(off) 100

100
td(on)
tf

10 10
0 10 20 30 40 50 20 40 60 80
Gate Resistance, RG [Ω] Collector Current, IC [A]

Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs. Gate Resistance
Collector Current
500 10
Common Emitter Common Emitter
VGE = 15V, RG = 10Ω VCC = 400V, VGE = 15V
o IC = 40A
TC = 25 C
o o
TC = 125 C TC = 25 C
Switching Loss [mJ]
Switching Time [ns]

td(off)
o
TC = 125 C Eon
100

tf
1

Eoff

10 0.2
0.3
20 40 60 80 0 10 20 30 40 50
Collector Current, IC [A] Gate Resistance, RG [Ω]

Figure 17. Switching Loss vs. Collector Current Figure 18. Turn off Switching
SOA Characteristics
30 200
Common Emitter
VGE = 15V, RG = 10Ω 100
10 o
TC = 25 C
Eon
Collector Current, IC [A]

o
TC = 125 C
Switching Loss [mJ]

Eoff
1
10

Safe Operating Area

0.1 o
VGE = 15V, TC = 125 C
1
20 30 40 50 60 70 80 1 10 100 1000
Collector Current, IC [A] Collector-Emitter Voltage, VCE [V]

©2008 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FGH40N60SFD Rev.1.5
 FGH40N60SFD — 600 V, 40 A Field Stop IGBT
Typical Performance Characteristics

Figure 19. Forward Characteristics Figure 20. Reverse Current

200
80
100
o
TJ = 125 C

Reverse Current , IR [μA]

Forward Current, IF [A]

o 10
TJ = 125 C
10
o o
TJ = 25 C TJ = 75 C
1
o
TJ = 75 C

o
1 TC = 25 C 0.1
o
o TJ = 25 C
TC = 75 C
o
TC = 125 C
0.01
0.2 50 200 400 600
0 1 2 3 4
Forward Voltage, VF [V] Reverse Voltage, VR [V]

Figure 21. Stored Charge Figure 22. Reverse Recovery Time

100 60
Stored Recovery Charge, Qrr [nC]

Reverse Recovery Time, trr [ns]

80 200A/μs

50
diF/dt = 100A/μs

60
200A/μs
diF/dt = 100A/μs 40

40

o
o TC = 25 C
TC = 25 C
30
20 5 10 20 30 40
5 10 20 30 40 Forward Current, IF [A]
Forward Current, IF [A]

Figure 23.Transient Thermal Impedance of IGBT

1
Thermal Response [Zthjc]

0.5
0.1 0.2
0.1
0.05
0.02
0.01 0.01 PDM

single pulse t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5 1E-4 1E-3 0.01 0.1 1
Rectangular Pulse Duration [sec]

©2008 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FGH40N60SFD Rev.1.5
 4.82
15.87
E 4.58
E B
15.37
A
4.13 12.81 E
3.53 6.85 3.65
E
6.61 3.51
0.254 M B A M

5.58
E 1.35
5.34
5.20 0.51
4.96
20.82
E 13.08 MIN
20.32

1 2 3 3 1
3.93 1.87
3.69
E 1.53 (2X) 16.25
E
15.75
1.60

2.77
2.43
0.71
5.56 0.51

1.35 2.66
1.17 2.29
0.254 M B A M
11.12

NOTES: UNLESS OTHERWISE SPECIFIED.

A. PACKAGE REFERENCE: JEDEC TO-247,

ISSUE E, VARIATION AB, DATED JUNE, 2004.
B. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD
FLASH, AND TIE BAR EXTRUSIONS.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DRAWING CONFORMS TO ASME Y14.5 - 1994

E DOES NOT COMPLY JEDEC STANDARD VALUE

F. DRAWING FILENAME: MKT-TO247A03_REV04
 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

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