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FEATURES
Low cos t
Diffus ed junction
DO - 41
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon,Alcohol,Is opropanol
and s im ilar s olvents
The plas tic m aterial carries U/L recognition 94V-0
MECHANICAL DATA
Cas e:JEDEC DO--41,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Dimensions in millimeters
Polarity: Color band denotes cathode
Weight: 0.012ounces ,0.34 gram s
Mounting pos ition: Any
1N 1N 1N 1N 1N 1N 1N
UNITS
4001 4002 4003 4004 4005 4006 4007
Maximum recurrent peak reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage V R MS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Maximum average f orw ard rectif ied current
IF (AV) 1.0 A
9.5mm lead lengths, @TA =75
Peak f orw ard surge current
8.3ms s ingle half -s ine-w av e IF SM 40.0 A
superimposed on rated load @TJ =125
Maximum instantaneous f orw ard voltage
VF 1.0 V
@ 1.0 A
Maximum reverse current @TA =25 5.0
IR A
at rated DC blocking voltage @TA =100 50.0
Typical junction capacitance (Note1) CJ 15 pF
Typical thermal resistance (Note2) Rθ JA 50 /W
Operating junction temperature range TJ - 55 ---- + 150
Storage temperature range TSTG - 55 ---- + 150
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance from junction to ambient.
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Diode Semiconductor Korea 1N4001 - - - 1N4007
100
JUNCTION CAPACITANCE,pF
10 TJ=25 100
Pulse Width=300us
4 60
f=1MHz
2 40 TJ=25
1.0
20
0.4
AMPERES
10
0.2
0.1
4
0.06
0.04
2
0.02
0.01 1
0.6 0.8 1.0 1.2 1.4 1.6 .1 .2 .4 1.0 2 4 10 20 40 100
50
1.0
40 0 .8
TJ=125 C
8.3ms Single Half
sine-wave
AMPERES
30 .6
AMPERES
20 .4
Single Phase
Half Wave 60HZ
Resistive or
10 .2 Inductive Load
0.375"(9.5)Lead Length
0 0
1 10 100 25 50 75 100 125 150 175 200
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