2016 2nd International Conference on Intelligent Energy and Power Systems (IEPS)

Power Losses in MOSFET Switch of Quasi-Resonant

Pulse Converter with Series Resonant Circuit
Yuriy Denisov1, Viacheslav Gordienko1, Alexey Gorodny1, Serhii Stepenko2,
Roman Yershov1, Aliona Prokhorova1, Ɉleksandra Kostyrieva1
1
Department of Industrial Electronics, 2Department of Information-Measuring Technologies, Metrology and Physics
Chernihiv National University of Technology
Chernihiv, Ukraine
den71ltd@gmail.com, aleksey.gorodny@gmail.com, roman.d.yershov@gmail.com

Abstract íThis article presents the analysis of electromagnetic
processes in MOSFET switch of a zero-current switching quasi-
resonant pulse converter with series resonant circuit. The
analysis performed by stitching equations illustrating change of
MOSFET current and MOSFET voltage. The obtained results
for each switching interval allowed to estimate the overall power
dissipation and power losses for all switching intervals.
Keywords í MOSFET switch; power losses; quasi-resonant
pulse converter; switching intervals; zero-current switching
I. INTRODUCTION
The majority of power electronics systems comprise serial
and parallel pulse converters (PC) with pulse-width
modulation (PWM) and frequency modulation (FM) control
systems [1]. Increasing of switching frequency leads to
improve their boundary parameters, but contemporaneously
reduces their efficiency due to increase of dynamic losses in
power switches [2, 3]. One of the way of reducing dynamic
losses [4, 5] at high commutation frequencies is applied of
zero-current switching quasi-resonant pulse converter (ZCS-
QRPC), where the control of output power is made by use of
FM. ZCS-QRPC were firstly proposed in [6] and the
principles of these converters' operation have been described
in details in [7] as well as a digital control system for such
converter [8, 9].
Due to the better dynamic and timing characteristics
Metal-Oxide-Semiconductor Field-Effect Transistor
(MOSFET) is commonly used as power switch in pulse
converters, where commutation frequency greater than 100
kHz [2, 10]. Experts estimate that up to 60% of the energy
losses in the PC takes place in MOSFET power switches.
Thus, evaluation and reduction of energy losses in MOSFET
switches are the main tasks within development of power
supplies for radioelectronic devices. Also global task is
determination of overall power dissipation reducing in
distributed electrical networks and Smart Grids which can be
performed in similar way as shown in [11, 12, 20].
The estimation of energy losses for the serial ZCS-QRPC
and PC with PWM are given in [13], where the generalized
method of switching processes' calculation was used. This
method takes into account all the parameters of converter's
power stage, parasitic parameters of the MOSFET switch, load
characteristics and supply voltage. Analysis and computation
of electromagnetic processes and static characteristics for the
parallel ZCS-QRPC with series resonant circuit were held in
[14, 21]. However, this analysis was carried out without taking
into account the influence of parasitic parameters of the power
switch.
Considering the application field of this converter, it
should be emphasized, that modern DC-stabilizers [15] and
Power Factor Correctors [16-19] are commonly based on
quasi-resonant (or similar principle) switching circuit. The
performed investigations are topical and results of this work
will find practical use in assessing energy performance of the
mentioned structures. Therefore this converter was selected as
a key study system. Results of power losses analysis of the
MOSFET switch of ZCS-QRPC allow us to estimate the
influence of reactive circuit elements values on energy
performance. Thus one can find a compromise solution with
regard to the requirements of efficiency and the specific
characteristics of the circuit parameters.
II. THE MAIN PRINCIPLES AND SIMPLIFICATIONS
The schematic diagram of boost ZCS-QRPC with series
resonant circuit is represented in Fig. 1.
Fig. 1. Schematic diagram of boost ZCS-QRPC with series resonant circuit
Time diagrams of the power converter are shown in Fig. 2.
The single operation period of the converter can be divided
into three intervals:
1) on-state interval of MOSFET switch (t0í t1);
2) on-state interval of reverse diode (t1í t2);
3) off-state interval of MOSFET switch, when the
energy, previously harvested in the input filter inductor, is
transferred to the load (t2 í t3).

978-1-5090-1769-0/16/$31.00 ©2016 IEEE

 Ucontr(t)

Uds(t)

t
t0 t1 t2 t3 t4
ɿVT(t)

Fig. 2. Time diagrams of boost ZCS-QRPC with series resonant circuit

Fig. 3. Time diagrams of MOSFET switch in boost ZCS-QRPC under
influence of parasitic parameters
When we take into account the most significant among
existing parasitic parameters of the real MOSFET switch and Power dissipation at the switching intervals:
their influence, the entertainment time diagrams of ZCS-
tn +1
QRPC operation, which are shown in Fig. 3, will differ from 1 (3)
corresponding which shown at Fig. 2. That is why we also Pn =
tn+1 − tn
⋅ ³ U ( t ) ⋅ I ( t ) dt
ds VT
must take them into account during the calculation of tn

electromagnetic processes in the circuit mentioned above.

The switching process of MOSFET in that case comprises
four intervals:
1) switching-on interval of the switch (t0 í t1);
2) on-state interval of the switch (t1 í t2);
3) on-state interval, when the current flows through the
reverse diode (t2 í t3);
4) switching-off interval of switch (t3 í t4).
To perform the analysis we take into account the following
considerations:
í the reactive elements of scheme and reverse diode D
are ideal (the diode switching time could be neglected);
– within the on-state interval of the power switch its
model is represented by resistance of open channel RiVT;
where Uds – MOSFET drain-to-source voltage; IVT = ILr –
MOSFET current; n í switching interval number.
For currents and voltages calculation the generalized
vector-matrix method of node potentials has been used (state-
space method) [7, 8, 19, 20].
III. ELECTROMAGNETIC PROCESSES CALCULATION WITHIN
MOSFET SWITCHING-ON INTERVAL
The equivalent scheme of ZCS-QRPC for MOSFET
switching-on interval is shown in Fig. 4(a) and its
corresponding scheme for calculation is shown in Fig. 4(b).
The initial conditions are as follow:
1 E
UCr (t0 ) = ((Uload − UsaturD) − E) ≈ ; Uds(t0 ) ≈ 2⋅ E; iLr(t0 ) = 0. (4)
2 2
According to the scheme (Fig. 4) the conductivity matrix:

í within MOSFET switching intervals its model ª1 1 1 º

comprises open channel resistance RiVT, parasitic capacity Cds « pL + pL + pCr -
pL
0 »
« r r
»
and current source IVT, where: « 1 1 », (5)
[Y ] = «- + YiVT − K − YiVT + K »
pL r pL r
IVT = K ⋅ U ds . (1) « »
« 0 − YiVT + K YiVT − K + pCds »
K = tgĮ, where Į is angle of tangent slope on the output « »
¬ ¼
characteristics of the MOSFET current.
and column vectors of reference currents and target voltages
The mentioned assumptions allow consider the main are represented by (6) and (7):
parameters influencing on converter operation within the
analysis. The integrated power dissipation calculated as: ª E § 1 ·º
« 2 + Cr ⋅ ( E − U ɋr ( t0 ) ) − L ⋅ iL ( t0 ) ⋅ ¨ + p ⋅ Cr ¸»
«p L © pLr ¹» ,(6)
PTOTAL = PSW _ ON + PON _ ST + POPEN _ D + PSW _ OFF . (2) «
[I ] = «
L ⋅ iL ( t0 ) »
»
« pLr »
« U ds ( t0 ) ⋅ Cds »
« »
« »
¬ ¼
 a) b)
Fig. 4. Equivalent schemes of ZCS-QRPC for MOSFET switching-on interval

ªU 2 ( p)º 1 .
U (p) = U (p) , U Cr (p) = i Cr (p) ⋅ (11)
[U ] = ««U 5 ( p)»» , (7) ds 5 pC
r

«¬U 6 ( p)»¼ The obtained values of currents and voltages in operator

calculus form allow returning in time domain using the
where E is the input supply voltage of the circuit. Inverse Laplace Transformation. The duration of the
Based on the node potentials and the initial conditions, switching-on interval is determined from the condition:
currents iLr(p), iL(p), iCr(p) and voltages Uds(p), Uɋr(p) could be
found: dU DS ( t ) (12)
= 0.
dt
U5 (p) − U6 (p) , (8)
iLr (p) = iVT (p) =
RiVT IV. ELECTROMAGNETIC PROCESSES CALCULATION WITHIN
MOSFET ON-STATE INTERVAL
E(p) − U2 (p) , (9)
iL (p) = The equivalent scheme of ZCS-QRPC for MOSFET on-
pL state interval is shown in Fig. 5(a) and its equivalent scheme
for calculation by vector-matrix method is shown in Fig. 5(b).
pL , (10)
iCr (p) = ⋅ iVT (p) The initial conditions iLr(t1), iL(t1), iCr(t1), Uds(t1), UCr(t1)
1 were found based on the values of current and voltages at the
pL +
pCr end of the previous switching interval.

a) b)
Fig. 5. Equivalent schemes of ZCS-QRPC for MOSFET on-state interval
 The conductivity matrix for the scheme in Fig. 5b: V. ELECTROMAGNETIC PROCESSES CALCULATION WITHIN
REVERSE DIODE FORWARD CONDUCTION INTERVAL
ª 1 1 1 º
« pL + pL + pC r - pL », (13)
The equivalent scheme of ZCS-QRPC for reverse diode
[Y ] = « r r
» forward conduction interval is shown in Fig. 6(a) and
« 1 1 » corresponding calculation scheme is shown in Fig. 6(b).
« - + YiVT »
¬ pL r pL r ¼
The initial conditions for the scheme in Fig. 6b iLr ( t 2 ) ,
and column vectors of reference currents and target voltages: iL ( t2 ) , U ds ( t2 ) , U Cr ( t2 ) were found from the values of iLr ( t ) ,
ª E 1 º iL ( t ) , U Cds ( t ) , U Cr ( t ) at the end of the previous interval.
« p 2 L + C r ⋅ ( E − U ɋr (t1 )) − L ⋅ i L (t `1 ) ⋅ ( pL + p ⋅ C r )» ,(14)
According to Fig. 6b, the conductivity matrix:
[I ] = « r
»
« L ⋅ i L (t1 ) YiVT ⋅ U ds (t1 ) »
« pL − L r ⋅ i (t
Lr 1 ) ⋅ YiVT + » ª 1 1 1 º
¬ p ¼ « pL + pC r + pL - »
r ,
r
pL (20)
[Y ] = « r
»
« 1 1 1 »
[U ] = ª«
U 2 ( p )º . (15)
» « - pL + »
¬U 5 ( p ) ¼ ¬ r pL r RiVT ¼
and column vectors of reference currents and target voltages:
The currents and voltages equations in voltages in operator
calculus form were found based on the node potentials: ª E 1 L ⋅ iL (t 2 ) º
⋅ + + U ɋr (t 2 ) ⋅ C r » , (21)
U 2 (p) − U5 (p) + L ⋅ iL (t1 ) ; (16) [I ] = «« p pL Lp
»
i L (p) = i VT (p) =
r p ⋅ Lr «¬0 »¼

[U ] = ª«
E(p) − U 2 (p) (17) U 2 ( p)º . (22)
i L (p) = ; »
pL ¬U 5 ( p) ¼
pL (18) Based on the node potentials, the currents and voltages in
i Cr (p) = ⋅ i VT (p);
1 operator calculus form were found:
pL +
pCr U2 (p) − U5 (p) + L ⋅ iL (t 2 ) ;
iL (p) = iVT (p) = (23)
1 . (19)
r p ⋅ Lr
U (p) = U (p) + Lr ⋅ iLr (t1 ) , U Cr (p) = i Cr (p) ⋅
ds 5 pCr E(p) − U 2 (p) (24)
i L (p) = ;
The obtained values of the currents and voltages in pL
operator calculus form allow returning in time domain through
p 2 ⋅ L ⋅ Cr
the Inverse Laplace Transformation. Duration of MOSFET i C r ( p) = 2
⋅ i VT (p) ; (25)
on-state interval is determined by the condition: IVT =0. p ⋅ L ⋅ Cr + 1

1 .
U (p) = U (p) , U Cr (p) = i Cr (p) ⋅ (26)
ds 5 pC r

a) b)
Fig. 6. Equivalent schemes of ZCS-QRPC for reverse diode forward conduction interval
 Using the obtained values of the currents and voltages in The target currents and voltages in operator calculus form:
operator calculus form, their values in time domain could be
found using the Inverse Laplace Transformation. Duration of U2 (p) − U5 (p) + L ⋅ iL (t 3 ) , (30)
iL (p) = iVT (p) =
the reverse diode on-state interval is determined by IVT = 0. r p ⋅ Lr

E(p) − U 2 (p) (31)

VI. ELECTROMAGNETIC PROCESSES CALCULATION WITHIN i L (p) = ;
pL
MOSFET SWITCHING-OFF INTERVAL
The equivalent scheme of ZCS-QRPC for MOSFET p 2 ⋅ L ⋅ Cr
switching-off interval is shown in Fig. 7(a) and corresponding i C r (p) = 2
⋅ i VT (p) ; (32)
p ⋅ L ⋅ Cr + 1
equivalent scheme for calculation by vector-matrix method is
shown in Fig. 7(b). 1 .
U (p) = U (p) , U Cr (p) = i Cr (p) ⋅ (33)
ds 5 pC
The initial conditions iLr(t3), iL(t3), Uds(t3), UCr(t3) were r
found from the final values of variables iLr(t), iL(t), Uds(t),
The obtained equations for currents and voltages allow
UCr(t) at the previous interval. According to the scheme
returning in time domain using the Inverse Laplace
(Fig. 7b), the conductivity matrix:
Transformation. Duration of the MOSFET switching-off
ª 1 1 1 º interval is determined by the condition: Uds= E.
« + pC r + - 0 »
« pL pL r pL r » The obtained equations for currents and voltages for
« 1 1 1 1 », (27) switching processes allowed calculation of the power losses
[Y ] = « - + - » and energy dissipation for PC based on ZCS-QRPC with rated
« pLr pLr R iVT R iVT »
power 200 W, switching frequency 500 kHz, and power
« 1 1 » switch SPW17N80C3. The results of these calculations are
« 0 - +Ʉ + pC »
¬ R iVT R iVT ¼ presented in Table 1. The calculated values of the power
losses differ from experimental results less than 10%.
and column vectors of reference currents and target voltages:
ª ȿ 1 L ⋅ i L (t 3 ) º TABLE I. RESULTS OF POWER AND ENERGY LOSSES CALCULATION
« p ⋅ pL + Lp + U ɋr (t 3 ) ⋅ C r » Name of the
« », (28) t, ns Q, ȝJ P, W
[I ] = « 0 »
1
switching interval
MOSFET switching-on 10 0.001 0.120
« »
« Uɫ DS (t 3 ) ⋅ C DS » 2 MOSFET on-state 253 0.256 1.010
«¬ »¼ Reverse diode
3 161 0.007 0.045
forward conduction
ªU 2 ( p )º 4 MOSFET switching-off 1400 1.232 0.880
[U ] = ««U 5 ( p) »» . (29) Total: 1824 1.496 0.820a
a.
«¬U 6 ( p ) »¼ The average power dissipation for one-cycle switching process is specified

a) b)
Fig. 7. Equivalent schemes of ZCS-QRPC for MOSFET switching-off interval
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