Phillips Semiconductors Product specification NPN 2 GHz RF power transistor BLT11 FEATURES DESCRIPTION + High power gain NPN silicon planar epitaxial transistor . ‘encapsulated in a 4-pin dual-emitter ne SOT103 plastic package. + Small size discrete power amplfior + 1.9 GHz operating area PINNING + Gold metalization ensures PIN DESCRIPTION lent roiabil cecemunargen 1 __ [emitter 2 [osteonr ttm view ser APPLICATIONS 5 Joie + Common emitter class-AB azaleas Fig SoTios. ‘operation in hand-held ra equipment at 1.9 GHz. QUICK REFERENCE DATA EF performance at Tanp = 25 °C in a common-emitter test circuit (soe Fig.7). t Vor PL G, Te MODE OF OPERATION (Giz) wo (mw) (a8) %) Pulsed, class-AB, duty oycle:<1:2[ 1.9 é 600 26 250 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134), ‘SYMBOL PARAMETER ‘CONDITIONS MIN. | MAX. | UNIT Vea | eollector-base voltage open emitter = 20 v Veeo | collectoremiter voltage | open base = 8 v Veoo _[emitterbase voliage ‘open collector = 25 v ie collector current (0) = '500__|mA Teain__ [average collector current = '500__|mA Prt total power dissipation up to T, = 60°C; note 1; 800 Fig2 175 |W Tay [storage temperature 2 (180_—(|C Ti junetion temperature = 175 ~*(-e Note 1. Tyis the temperature at the soldering point of the collector pin, 1995 Mar 09) 2 mm 7110826 0093027 938 mmPhilips Semiconductors Product specification NPN 2 GHz RF power transistor BLT11 ‘THERMAL CHARACTERISTICS ‘SYMBOL PARAMETER CONDITIONS VALUE [UNIT Finjs | thermal resistance from junction to soldering point | up to T, = 60 °C; note 1; 6 KW Pig = 1.75 W Note 1. Ty is the temperature at the soldering point of the collector pin. CHARACTERISTICS T,=25 °C unless otherwise specified ‘SYMBOL PARAMETER ‘CONDITIONS MIN. | MAX. | UNIT Vienyceo_[collector-base breakdown voltage [open emitter le=O1mAile=0 [20 |- Vv Vieroeo_| colector-emitier breakdown votage [open base; Iq = 10 mA; Ip = 0 8 : Vv Veeryeso _[emitter-base breakdown voltage [open collectorile=O1mAjlc=0 [25 |- Vv Toes ___ [collector cut-off current ViVee = 100 [nA hee DC current gain ‘300 mA; Vor =5V_ 23 i(- Ce ‘collector capacitance Veg = 6Vif=1MHz [- 4 PF Cro feedback capacitance i Moe = 6 Vit = 1 MHZ = 3 pF 20 cd a) cc) | oF 15 3 10 : 2 t | os t 1 : so 100 ~=~C«SO at 2 4 6 8 0 a) You te=0:te 1 Me Fig.3 Collector capacitance as a function of Fig.2 Power derating curve collector-base voltage; typical values. 1995 Mar 09 3 @™ 7210826 0093026 574 mmPhilips Semiconductors, Product specification NPN 2 GHz RF power transistor BLT11 APPLICATION INFORMATION RF performance at Tams = 25 °C in a common-emitter test circuit (see Fig.7). t Vee lea PL Gp Tle MODE OF OPERATION (ein) w (may | (mw (2B) 8) 36 250 Pulsed, class-AB, duty cycle:<1:2] 1.9 6 1 60 | wees | yp 60 Ruggedness in class-AB operation ‘The BLT11 is capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated ‘output power under pulsed conditions up to a supply voltage of 8 V, f= 1.9 GHz and a duty cycle of 1 : 2 Poised, class-AB operation. Vee =6 V:Vpe = 0.85 Vit =". GHz; ty oyele <1 2 ira opted for P= 00 mW Fig.4 Power gain and collector efficiency as functions of load power; typical values. 10 100 1000 — oy | ne | | on (dB) | oH) mi) | | : | ® is - | | 6 60 ‘600 f——t t am a «|_| | | woo ate t00 oo sand co 00 300 Pim) Pim Pulsed, class-AB operation. Voe=6¥; Voc = 065 Vit = 1.9 GH city eel «12 Cet optimized for = 600 mi Fig.5 Load power as a function of drive power; typical values, 1995 Mar 09 mm 7210825 0093029 700 mmPhilips Semiconductors Product specification NPN 2 GHz RF power transistor BLT11 SPICE parameters for the BLT11 erystal SEQUENCE No. | PARAMETER | VALUE| UNIT | [ SEQUENCE No. | PARAMETER | VALUE | UNIT 1 is 3,338 | fA 36) WS 750.0 {mv 2 BF 97.14_|- 37 MWS 0,000 |= 3 NE 0.988 _|- 38 Fo o7aa_|- @ VAF 3140_|V Note 5. ca Gea 1. These parameters have not been extracted, the 6 (SE 23.53 | pA default values are shown. 7 NE 2.986 _|- 8 8A 1373_|- 9 NR 0.989 [= co 70 VAR 2448 _|V + a KR 100.0_[A 7 12 Isc 54.10 [1A portnbemos co patinoc 8 NC t224_|- x 14 RB 1.740 [2 Coe ce 6 IRB 1.000 [wa te 16 REM 1740 [a se 7 RE 5965_|ma 7 18 RC 0.124 [a 10) xTB 0.000 _|- e Zot EG 1.110 [ev 210 xT 3.000__|- lp =50; Ale = 50; get) = Otel 2 CIE 3555 [pF Cain regime “8 She 23 WE 0.600 _|V 5 = = oe Fig 6 Package equivalent circuit SOT103, 25 TF 12.96 [ps es — on List of components (see Fig.6) 27 VIF 0.866 [Vv DESIGNATION VALUE UNIT 28 ITF 5.940 [A Coe 241 Lia 29 PTF 0.000 [deg Cop 12 ia 30 Cie 4274 [pF Cor 238 i 31 WiC 0650 _|V u 0.64 nH 32 WG 0.392 2 057 nH 39 XGIC 0.150_|= iB 0.40 oH 34() TR 0.000 [ns be 0.40 oH 35) CUS 0.000 | F be 0.05, nH 1905 Mar 09 mm 7110826 0093030 422 mmPhilips Semiconductors Product specification NPN 2 GHz RF power transistor BLT11 Test circuit information Fig.7 Common-emitter test circu for class-AB operation at 1900 MHz. 1995 Mar 09 6 mm 7120826 009303) 369 aPhilips Semiconductors Product specification NPN 2 GHz RF power transistor BLT11 List of components used in test circuit (see Fig.7) ‘COMPONENT DESCRIPTION VALUE _ | DIMENSIONS | CATALOGUE No, Gi, ©8, 69, C10 | mulilayer ceramic chip capaciion note 1 _[24 pF 2 ‘multilayer ceramic chip capacitor; note 1_|0.6 pF 3,05 multilayer ceramic chip capacitor, note 1 [0.4 pF cH multilayer ceramic chip capacitor, note 1_|0.7 pF 6,67 ‘multilayer ceramic chip capacitor, note 1_|0.5 pF ci, C12 electrolytic capacitor 1500 nF; 10V) 2222 082 15162 a ‘stipine; note 2 Tength 23 mm width 0.93 mm @ ‘Stipine; note 2 Tength 6.8 mm width 0.93 mm 13 striping; note 2 Tength 15.9 mm ‘width 0.93 mm ua stripline; note 2 Tength 4:4 mm width 31mm is stripline; note 2 Tength 7.5 mm width 3 mm rr Stipine; note 2 Tength 4 mm width 0.93 mm 7 ‘stipline; note 2 length 17.3 mm width 0.98 mm iB ‘shiping; note 2 Tength 10 mm width 0.99 mm 3 ‘stipline; note Tength § mm with 0.4 mm U0 ‘stipling; note 2 Tength 19:3 mm with 0.98 mm uit Stipling; note 2 Tength 20.8 mm with 0.4 mm ua micro choke 7 e028 Rt metal fm resistor 209; 04W 2822 187 10209 Re ‘metal film resistor 500 0; 0.4 W 2822 187 15001 Notes 1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 2, The striplines are on a Ye inch double copper-clad printed-circult board with PTFE fibre-glass dielectric (¢, = 6). 1995 Mar 09 mm 7230826 0093032 275 mmPhilips Semiconductors Product specification NPN 2 GHz RF power transistor Dimensions in am. “The componens are stusied on one ste of the copperciad PTFE micrfore las board. the oer ses not etched and serves a aground plano. Ear comectons om the component isto he eed plane ae mage by tough metalation, Fig.8 Printed-circuit board and component lay-out for common-emitter test circult in Fig.7. 1995 Mar 09, 8 mm 7110825 0093033 13) mmPhilips Semiconductors Product specification NPN 2 GHz RF power transistor BLT11 PACKAGE OUTLINE ‘ype number ‘marking 48 026 max-a! le SP bsemax 27 max Danson in mn Fig.9 SOT103. DEFINITIONS Data Sheet Status Objective specification ‘This data sheet contains target or goal specifications for product development. Preliminary specification | This data sheet contains preliminary data; supplementary data may be published later. Product specification ‘This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134), Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification Is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information ‘Where application information is given, itis advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale, 1995 Mar 09 9 mm 7220826 0093034 073 mm