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TK10A60D: Switching Regulator Applications
TK10A60D: Switching Regulator Applications
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TK10A60D
Switching Regulator Applications Unit: mm
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics 2
Note 1: Ensure that the channel temperature does not exceed 150℃.
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TK10A60D
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Marking
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ID – VDS ID – VDS
10 20
COMMON SOURCE 8 COMMON SOURCE
6.5 10
Tc = 25°C 7 Tc = 25°C
7.5
PULSE TEST 7 PULSE TEST
(A)
(A)
8 10,8 16
6.25
DRAIN CURRENT ID
DRAIN CURRENT ID
6.75
6 12
6
6.5
4 8
6
5.5
2 4 5.5
5
0 0
0 2 4 6 8 10 0 10 20 30 40 50
VDS = 20 V Tc = 25℃
(A)
16 8 PULSE TEST
PULSE TEST
DRAIN CURRENT ID
DRAIN-SOURCE VOLTAGE
12 6
ID = 10 A
8 4
100 Tc = −55°C 5
4 2
25
2.5
0 0
0 2 4 6 8 10 0 4 8 12 16 20
GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V)
VDS = 20 V Tc = 25°C
PULSE TEST PULSE TEST
Tc = −55°C
10
RDS (ON) (Ω)
⎪Yfs⎪ (S)
25
100
1
VGS = 10 V、15V
0.1
0.1
0.1 1 10 100 0.1 1 10 100
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10
RDS (ON) ( Ω)
1.5 ID=10A
(A)
5A
1.0 2.5A
1
10
0.5
5
3
1 VGS = 0, −1 V
0 0.1
−80 −40 0 40 80 120 160 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4
Ciss
GATE THRESHOLD VOLTAGE
4
(pF)
1000
C
Coss 3
CAPACITANCE
Vth (V)
100
1 0
0.1 1 10 100 −80 −40 0 40 80 120 160
(V)
DRAIN POWER DISSIPATION
VDS
VGS
400 16
60
DRAIN-SOURCE VOLTAGE
GATE-SOURCE VOLTAGE
300 12
PD (W)
VDD = 100 V
40 400
0 0 0
0 40 80 120 160 200 0 10 20 30 40
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rth – tw
10
NORMALIZED TRANSIENT THERMAL
IMPEDANCE rth (t)/Rth (ch-c)
1 Duty = 0.5
Duty=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
0.01
SINGLE PULSE
Duty = t/T
Rth (ch-c) = 2.78°C/W
0.001
10μ 100μ 1m 10m 100m 1 10
100 μs *
400
AVALANCHE ENERGY
ID max (continuous) * 1 ms *
10
(A)
EAS (mJ)
300
DRAIN CURRENT ID
1
200
DC operation
Tc = 25°C
100
0.1
0
25 50 75 100 125 150
*: SINGLE NONREPETITIVE PULSE
0.01
Tc = 25°C CHANNEL TEMPERATURE (INITIAL)
CURVES MUST BE DERATED
Tch (°C)
LINEARLY WITH INCREASE IN VDSS max
0.001 TEMPERATURE. BVDSS
1 10 100 1000 15 V
DRAIN-SOURCE VOLTAGE VDS (V) IAR
−15 V
VDD VDS
RG = 25 Ω 1 ⎛ B VDSS ⎞
Ε AS = ⋅ L ⋅ I2 ⋅ ⎜ ⎟
VDD = 90 V, L = 6.36mH 2 ⎜B − V ⎟
⎝ VDSS DD ⎠
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