2N6338, 2N6341 High-Power NPN Silicon Transistors

2N6338, 2N6341
High-Power NPN Silicon

Transistors
. . . designed for use in industrial−military power amplifier and
switching circuit applications.
• High Collector−Emitter Sustaining Voltage −
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VCEO(sus) = 100 Vdc (Min) − 2N6338
= 150 Vdc (Min) − 2N6341
• High DC Current Gain − 25 AMPERE
hFE = 30 − 120 @ IC = 10 Adc POWER TRANSISTORS
= 12 (Min) @ IC = 25 Adc
NPN SILICON
• Low Collector−Emitter Saturation Voltage −
VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
• Fast Switching Times @ IC = 10 Adc
tr = 0.3 ms (Max)
ts = 1.0 ms (Max)
tf = 0.25 ms (Max)
• Pb−Free Packages are Available
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*MAXIMUM RATINGS
TO−204AA
Rating Symbol 2N6338 2N6341 Unit CASE 1−07
Collector−Base Voltage VCB 120 180 Vdc
ÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Voltage VCEO 100 150 Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Emitter−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current
VEB
IC
6.0 Vdc
Adc
Device
ORDERING INFORMATION
Package Shipping
Continuous 25
Peak 50 2N6338 TO−204AA 100 Units / Tray
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Base Current
ÎÎÎ
Total Device Dissipation
IB
PD
10 Adc 2N6338G TO−204AA
(Pb−Free)
100 Units / Tray
@ TC = 25_C 200 W 2N6341 TO−204AA 100 Units / Tray
Derate above 25_C 1.14 W/°C
2N6341G TO−204AA 100 Units / Tray
Operating and Storage TJ, Tstg – 65 to + 200 _C (Pb−Free)
Junction
Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case θJC 0.875 _C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*Indicates JEDEC Registered Data.
© Semiconductor Components Industries, LLC, 2011 1 Publication Order Number:

October, 2011 − Rev. 12 2N6338/D
2N6338, 2N6341
200
175
PD, POWER DISSIPATION (WATTS)

150
125
100
75
50
25
0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage (1) 2N6338 VCEO(sus) 100 − Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 50 mAdc, IB = 0)
Collector Cutoff Current
2N6341
ICEO
150 −
μAdc
(VCE = 50 Vdc, IB = 0) 2N6338 − 50
(VCE = 75 Vdc, IB = 0) 2N6341 − 50
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Collector Cutoff Current
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc)
ICEX
− 10 μAdc
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 150_C) − 1.0 mAdc
Collector Cutoff Current (VCB = Rated VCB, IE = 0)
ICBO − 10 μAdc
Emitter Cutoff Current (VBE = 6.0 Vdc, IC = 0)
IEBO − 100 μAdc
ON CHARACTERISTICS (1)
DC Current Gain) hFE −
(IC = 0.5 Adc, VCE = 2.0 Vdc) 50 −
(IC = 10 Adc, VCE = 2.0 Vdc) 30 120
(IC = 25 Adc, VCE = 2.0 Vdc) 12 −
Collector Emitter Saturation Voltage VCE(sat) Vdc
(IC = 10 Adc, IB = 1.0 Adc) − 1.0
(IC = 25 Adc, IB = 2.5 Adc) − 1.8
Base−Emitter Saturation Voltage VBE(sat) Vdc
(IC = 10 Adc, IB = 1.0 Adc) − 1.8
(IC = 25 Adc, IB = 2.5 Adc) − 2.5
Base−Emitter On Voltage (IC = 10 Adc, VCE = 2.0 Vdc) VBE(on) − 1.8 Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (2) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 10 MHz) fT 40 − MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob − 300 pF
SWITCHING CHARACTERISTICS
Rise Time (VCC ≈ 80 Vdc, IC = 10Adc, IB1 = 1.0 Adc, VBE(off) = 6.0 Vdc) tr − 0.3 μs
Storage Time (VCC ≈ 80 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)
Fall Time (VCC ≈ 80 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)
*Indicates JEDEC Registered Data.
ts
tf
−
−
1.0
0.25
μs
μs
(1) Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.
(2) fT = |hfe| • ftest.
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2
2N6338, 2N6341
VCC 1000
700
+ 80 V VCC = 80 V
500
RC IC/IB = 10
8.0 OHMS td @ VBE(off) = 6.0 V TJ = 25°C
300
10 μs RB SCOPE 200
t, TIME (ns)
+ 11 V 10 OHMS
0 100 tr
70
1N4933
- 9.0 V 50
tr, tf v 10 ns 30
- 5.0 V
DUTY CYCLE = 1.0%
20
NOTE: For information on Figures 3 and 6, RB and RC were 10

varied to obtain desired test conditions. 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IC, COLLECTOR CURRENT (AMP)
Figure 2. Switching Time Test Circuit Figure 3. Turn−On Time
1.0
THERMAL RESISTANCE (NORMALIZED)
0.7 D = 0.5
0.5
r(t), EFFECTIVE TRANSIENT
0.3 0.2
0.2
0.1 P(pk)
0.1 θJC = r(t) θJC
0.05 θJC = 0.875°C/W MAX
0.07 0.02
0.05 D CURVES APPLY FOR POWER
t1 PULSE TRAIN SHOWN
0.03 0.01 t2 READ TIME AT t1
0.02 SINGLE PULSE TJ(pk) - TC = P(pk) θJC(t)
DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000
t, TIME (ms)
Figure 4. Thermal Response
100 There are two limitations on the power handling ability of

50 a transistor: average junction temperature and second
200 μs
IC, COLLECTOR CURRENT (AMP)
20 breakdown. Safe operating area curves indicate IC−VCE

10
dc
1.0 ms limits of the transistor that must be observed for reliable
5.0 5.0 ms operation; i.e., the transistor must not be subjected to greater
2.0 TJ = 200°C dissipation than the curves indicate.
1.0 BONDING WIRE LIMITED The data of Figure 5 is based on TJ(pk) = 200_C; TC is
0.5 THERMALLY LIMITED @ variable depending on conditions. Second breakdown pulse
0.2 TC = 25°C (SINGLE PULSE) limits are valid for duty cycles to 10% provided TJ(pk)
SECOND BREAKDOWN
0.1 v 200_C. TJ(pk) may be calculated from the data in
LIMITED CURVES APPLY 2N6338
0.05
BELOW RATED VCEO 2N6341 Figure 4. At high case temperatures, thermal limitations will
0.02 reduce the power that can be handled to values less than the
0.01
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
limitations imposed by second breakdown.
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
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3
2N6338, 2N6341
5.0 5000
3.0 VCC = 80 V 3000 TJ = 25°C
ts IB1 = IB2 Cib
2.0 2000
IC/IB = 10
C, CAPACITANCE (pF)
TJ = 25°C
1.0 1000
t, TIME (s)
0.7 700
μ
0.5 500
0.3 300
0.2 tf 200 Cob
0.1 100
0.07 70
0.05 50
0.3 0.5 0.7 1.0 2.0 3.0 5.0 10 20 30 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (AMP) VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Turn−Off Time Figure 7. Capacitance
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4
2N6338, 2N6341
PACKAGE DIMENSIONS
TO−204AA (TO−3
CASE 1−07
ISSUE Z
A
N NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C Y14.5M, 1982.
−T− SEATING
PLANE
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
E REFERENCED TO-204AA OUTLINE SHALL APPLY.
D 2 PL K
INCHES MILLIMETERS
0.13 (0.005) M T Q M Y M DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
U
L −Y− B --- 1.050 --- 26.67
V C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
2 E 0.055 0.070 1.40 1.77
G B G 0.430 BSC 10.92 BSC
H 1 H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
−Q− N --- 0.830 --- 21.08
Q 0.151 0.165 3.84 4.19
0.13 (0.005) M T Y M U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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2N6338, 2N6341 High-Power NPN Silicon Transistors

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2N6338, 2N6341 High-Power NPN Silicon Transistors

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2N6338, 2N6341

High-Power NPN Silicon

© Semiconductor Components Industries, LLC, 2011 1 Publication Order Number:

PD, POWER DISSIPATION (WATTS)

NOTE: For information on Figures 3 and 6, RB and RC were 10

Figure 2. Switching Time Test Circuit Figure 3. Turn−On Time

100 There are two limitations on the power handling ability of

20 breakdown. Safe operating area curves indicate IC−VCE

Figure 6. Turn−Off Time Figure 7. Capacitance

PUBLICATION ORDERING INFORMATION

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