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Irfb4110Pbf: V 100V R Typ. 3.7M Max. 4.5M I 180A C I 120A
Irfb4110Pbf: V 100V R Typ. 3.7M Max. 4.5M I 180A C I 120A
G D S
Gate Drain Source
Standard Pack
Base Part Number Package Type Orderable Part Number
Form Quantity
IRFB4110PbF TO-220 Tube 50 IRFB4110PbF
Thermal Resistance
Symbol Parameter Typ. Max. Units
RθJC Junction-to-Case k ––– 0.402
RθCS Case-to-Sink, Flat Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient j ––– 62
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
IRFB4110PbF
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 75A, VGS = 0V g
trr Reverse Recovery Time ––– 50 75 ns TJ = 25°C VR = 85V,
––– 60 90 T = 125°C IF = 75A
g
J
Qrr Reverse Recovery Charge ––– 94 140 nC TJ = 25°C di/dt = 100A/µs
––– 140 210 TJ = 125°C
IRRM Reverse Recovery Current ––– 3.5 ––– A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable junction ISD ≤ 75A, di/dt ≤ 630A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
temperature. Bond wire current limit is 120A. Note that current
Pulse width ≤ 400µs; duty cycle ≤ 2%.
limitations arising from heating of the device leads may occur with Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements. as Coss while VDS is rising from 0 to 80% VDSS .
Repetitive rating; pulse width limited by max. junction Coss eff. (ER) is a fixed capacitance that gives the same energy as
temperature. Coss while VDS is rising from 0 to 80% VDSS.
Limited by TJmax, starting TJ = 25°C, L = 0.033mH When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
RG = 25Ω, IAS = 108A, VGS =10V. Part not recommended for use mended footprint and soldering techniques refer to application note #AN-994.
above this value. Rθ is measured at TJ approximately 90°C.
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IRFB4110PbF
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
ID, Drain-to-Source Current (A)
2.5
100
2.0
(Normalized)
10 T J = 25°C
1.5
T J = 175°C
1
1.0
VDS = 25V
≤60µs PULSE WIDTH
0.1 0.5
1 2 3 4 5 6 7 -60 -40 -20 0 20 40 60 80 100120140160180
100000 12.0
VGS = 0V, f = 1 MHZ
ID= 75A
C iss = C gs + C gd, C ds SHORTED
C rss = C gd 10.0
VGS, Gate-to-Source Voltage (V)
6.0
Coss
1000 4.0
Crss
2.0
100 0.0
1 10 100 0 50 100 150 200
VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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IRFB4110PbF
1000 10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
T J = 175°C
100
100
T J = 25°C 100µsec
10 10
1 1msec
1
10msec
0.1 Tc = 25°C DC
Tj = 175°C
VGS = 0V Single Pulse
0.1 0.01
0.0 0.5 1.0 1.5 2.0 0.1 1 10 100 1000
VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area
120
100 110
80 105
60
100
40
95
20
0 90
25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100120140160180
TC , Case Temperature (°C) T J , Temperature ( °C )
Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Drain-to-Source Breakdown Voltage
5.0 800
ID
EAS , Single Pulse Avalanche Energy (mJ)
2.5 400
2.0
300
1.5
200
1.0
100
0.5
0.0 0
0 20 40 60 80 100 120 25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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IRFB4110PbF
D = 0.50
Thermal Response ( Z thJC )
0.1 0.20
0.10
0.05
τi (sec)
R1 R2 R3
0.01 0.02 R1 R2 R3 Ri (°C/W)
τJ τC
0.01 τJ
τ1
τC 0.09876251 0.000111
τ2 τ3
τ1 τ2 τ3 0.2066697 0.001743
Ci= τi/R i 0.09510464 0.012269
Ci= τi/Ri
0.001 SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.05
10 0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
IRFB4110PbF
4.0 25
IF = 30A
VGS(th), Gate threshold Voltage (V)
3.5 V R = 85V
20
TJ = 25°C
3.0 TJ = 125°C
15
2.5
IRR (A)
ID = 250µA
2.0 ID = 1.0mA 10
ID = 1.0A
1.5
5
1.0
0.5 0
-75 -50 -25 0 25 50 75 100 125 150 175 200 0 200 400 600 800 1000
T J , Temperature ( °C ) diF /dt (A/µs)
Fig 16. Threshold Voltage vs. Temperature Fig. 17 - Typical Recovery Current vs. dif/dt
25 560
IF = 45A IF = 30A
320
10
240
5 160
0 80
0 200 400 600 800 1000 0 200 400 600 800 1000
Fig. 18 - Typical Recovery Current vs. dif/dt Fig. 19 - Typical Stored Charge vs. dif/dt
560
IF = 45A
480 V R = 85V
TJ = 25°C
TJ = 125°C
400
QRR (nC)
320
240
160
80
0 200 400 600 800 1000
diF /dt (A/µs)
VGS=10V *
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
Recovery Body Diode Forward
-
+ Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
Ripple ≤ 5% ISD
V(BR)DSS
15V
tp
L DRIVER
VDS
RG D.U.T +
V
- DD
IAS A
VGS
20V
tp 0.01Ω
I AS
Fig 21a. Unclamped Inductive Test Circuit Fig 21b. Unclamped Inductive Waveforms
LD
VDS VDS
90%
+
VDD -
D.U.T 10%
VGS VGS
Pulse Width < 1µs
Duty Factor < 0.1% td(on) tr td(off) tf
Fig 22a. Switching Time Test Circuit Fig 22b. Switching Time Waveforms
Id
Vds
Vgs
L
VCC
DUT Vgs(th)
0
1K
Fig 23a. Gate Charge Test Circuit Fig 23b. Gate Charge Waveform
7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
IRFB4110PbF
ASSEMBLY
IRFB4110
PYWW?
DATE CODE
P = LEAD-FREE
OR ASSEMBLY
IRFB4110
YWWP
DATE CODE
Y = LAST DIGIT OF YEAR
LOT CODE Y = LAST DIGIT OF YEAR LOT CODE WW = WORK WEEK
LC LC WW = WORK WEEK LC LC P = LEAD-FREE
? = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
IRFB4110PbF
Qualification information†
†
Industrial
Qualification level ††
(per JEDEC JESD47F guidelines)
Moisture Sensitivity Level TO-220 N/A
RoHS compliant Yes
Revision History
Date Comment
• Updated data sheet with new IR corporate template.
• Updated package outline & part marking on page 8.
4/28/2014
• Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.
• Updated typo on the Fig.19 and Fig.20, unit of Y-axis from "A" to "nC" on page 6.
9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014