SILICON CONTROLLED RECTIFIERS

370PA..F Series
Maximum Allowable Heatsink Temperature (°C)

Maximum Allowable Heatsink Temperature (°C)

130 130
370PA..F Series 370PA..F Series
120 (Double Side Cooled) 120 (Double Side Cooled)
R thJ-hs (DC) = 0.08 K/W 110 R thJ-hs (DC) = 0.08 K/W
110
100
100
90
90
Conduction Angle 80 Conduction Period
80
70 30°
70 30°
60 60°
60°
60 50 90°
90°
50 120°
40
180° 120°
40 30
180° DC
30 20
0 50 100 150 200 250 300 350 400 450 0 100 200 300 400 500 600 700

Average On-state Current (A) Average On-state Current (A)

Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)

1000 1400
Maximum Average On-state Power Loss (W)

DC
900 180°
1200 180°
120°
800 120°
90°
90°
700 60° 1000
60°
30°
600 30°
RMS Limit 800
500
600 RMS Limit
400
Conduction Angle Conduction Period
300 400
200
370PA..F Series 370PA..F Series
200
100 TJ = 125°C T J = 125°C

0 0
0 50 100 150 200 250 300 350 400 450 0 100 200 300 400 500 600 700

Average On-state Current (A) Average On-state Current (A)

Fig. 5 - On-state Power Loss Characteristics Fig. 6 - On-state Power Loss Characteristics

4500 5000
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)

At Any Rated Load Condition And With Maximum Non Repetitive Surge Current
Rated VRRM Applied Following Surge. Versus Pulse Train Duration. Control
Initial TJ = 125°C 4500 Of Conduction May Not Be Maintained.
4000 @ 60 Hz 0.0083 s Initial TJ = 125°C
@ 50 Hz 0.0100 s No Voltage Reapplied
4000
Rated VRRM Reapplied
3500
3500
3000
3000

2500
2500
370PA..F Series 370PA..F Series

2000 2000
1 10 100 0.01 0.1 1
Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s)

Fig. 7 - Maximum Non-repetitive Surge Current Fig. 8 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled Single and Double Side Cooled

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 SILICON CONTROLLED RECTIFIERS

370PA..F Series

10000 1

Transient Thermal Impedance Z thJ -hs (K/W)

Instantaneous On-state Current (A)

370PA..F Series 370PA..F Series

0.1

1000
Steady State Value
T J= 25°C R thJ-hs = 0.17 K/W
0.01
(Single Side Cooled)
TJ = 125°C
R thJ-hs = 0.08 K/W
(Double Side Cooled)
(DC Operation)
100 0.001
1 1.5 2 2.5 3 3.5 4 4.5 0.001 0.01 0.1 1 10
Instantaneous On-state Voltage (V) Square Wave Pulse Duration (s)

Fig. 9 - On-state Voltage Drop Characteristics Fig. 10 - Thermal Impedance ZthJ-hs Characteristics

250 160
Maximum Reverse Recovery Current - Irr (A)
Maximum Reverse Recovery Charge - Qrr (µC)

370PA..F Series I
TM
= 500 A ITM = 500 A
T J= 125 °C 140
300 A
200 300 A
120 200 A
200 A
100 A
100
150 100 A 50 A
80
100
60
50 A
40
50 370PA..F Series
20 T J= 125 °C

0 0
0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-state Current - di/dt (A/µs) Rate Of Fall Of Forward Current - di/dt (A/µs)

Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics

1E4
Snubber circuit Snubber circuit
R s = 47 ohms R s = 47 ohms
C s = 0.22 µF Cs = 0.22 µF
Peak On-state Current (A)

V D = 80% V DRM V D = 80% VDRM

200 100 50 Hz
500 400 400 200 100 50 Hz
1500 1000 1000 500
1500
1E3 2500
2500

3000
3000
370PA..F Series
5000 370PA..F Series
5000 Sinusoidal pulse
Sinusoidal pulse
tp TC = 55°C
tp TC = 40°C 10000
10000
1E2
1E1 1E2 1E3 1E41E1
1E4 1E1 1E2 1E3 1E4
Pulse Basewidth (µs) Pulse Basewidth (µs)
Fig. 13 - Frequency Characteristics

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 SILICON CONTROLLED RECTIFIERS

370PA..F Series

1E4
Snubber circuit Snubber circuit
R s = 47 ohms R s = 47 ohms
C s = 0.22 µF C s = 0.22 µF
Peak On-state Current (A)

V D = 80% VDRM V D = 80% V DRM

50 Hz
1E3 200 100 100 50 Hz
500 400 400 200
1000 500
1500 1000
1500
2500
2500
370PA..F Series
3000 370PA..F Series
Trapezoidal pulse 3000 Trapezoidal pulse
T C = 40°C
tp TC = 55°C
5000 di/dt = 50A/µs tp
5000 di/dt = 50A/µs
1E2
1E1 1E2 1E3 1E4 1E1
1E4 1E1 1E2 1E3 1E4
Pulse Basewidth (µs) Pulse Basewidth (µs)

Fig. 14 - Frequency Characteristics

1E4
Snubber circuit Snubber circuit
R s = 47 ohms R s = 47 ohms
C s = 0.22 µF C s = 0.22 µF
Peak On-state Current (A)

V D = 80% VDRM V D = 80% VDRM

1E3 400 200 100 50 Hz 50 Hz

400 200 100
1000 500 500
1500 1000
1500
2500
3000 2500
5000 3000
1E2 10000 5000
370PA..F Series 370PA..F Series
Trapezoidal pulse Trapezoidal pulse
10000
T C = 40°C T C = 55°C
tp tp
di/dt = 100A/µs di/dt = 100A/µs

1E1
1E1 1E2 1E3 1E4 1E1
1E4 1E1 1E2 1E3 1E4
Pulse Basewidth (µs) Pulse Basewidth (µs)

Fig. 15 - Frequency Characteristics

1E5
370PA..F Series
Rectangular pulse
tp di/dt = 50A/µs
Peak On-state Current (A)

1E4
20 joules per pulse
10 20 joules per pulse
4 10
2 4
1 2
0.5
1E3 0.3 1
0.2
0.5
0.1 0.3
0.2
0.1
1E2
370PA..F Series
Sinusoidal pulse
tp

1E1
1E1 1E2 1E3 1E4 1E1
1E4 1E1 1E2 1E3 1E4
Pulse Basewidth (µs) Pulse Basewidth (µs)

Fig. 16 - Maximum On-state Energy Power Loss Characteristics

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 SILICON CONTROLLED RECTIFIERS

370PA..F Series

100
Rectangular gate pulse (1) PGM = 10W, tp = 20ms
a) Recommended load line for (2) PGM = 20W, tp = 10ms
Instantaneous Gate Voltage (V)

rated di/dt : 20V, 10ohms; tr<=1 µs (3) PGM = 40W, tp = 5ms

b) Recommended load line for (4) PGM = 60W, tp = 3.3ms
<=30% rated di/dt : 10V, 10ohms
10 tr<=1 µs (a)
(b)

Tj=-40 °C
Tj=25 °C
Tj=125 °C
1
(1) (2) (3) (4)
VGD
IGD
Device: 370PA..F Series Frequency Limited by PG(AV)
0.1
0.001 0.01 0.1 1 10 100
Instantaneous Gate Current (A)

Fig. 17 - Gate Characteristics

Last Update : Mar. 2006

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