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Diode Resistance
Diode Resistance
by Dennis L Feucht
The electronic circuits literature, beginning with textbooks, does not usually distinguish
clearly between static and dynamic resistance. This article explains the difference, why it
matters in design, and then offers some circuits with input resistances that at first might
seem hard to believe.
What adds to the confusion is another related pair of yet different quantities: total-
variable (or large-signal) versus incremental (or small-signal). This distinction arises
because of nonlinear circuit components, primarily semiconductors. Nonlinear circuits
are generally difficult to analyze. The most common approach is to approximate their
nonlinear functions with linear functions in the region of operation. This can be done by
either deriving the nonlinear equations for the entire nonlinear circuit, then linearizing the
result around the operating point, or (as is usually done) by linearizing the individual
components of the circuit and then doing a linear circuit analysis. The linear
approximations for nonlinear components -- mainly semiconductors -- depend on where
in the domain of the characteristic device function the linearization occurs. The accuracy
of the analysis then depends on maintaining minor, or incremental, variations around this
operating point.
Diode Resistances
Different kinds of resistance are better explained by a simple but common example, the
diode. Shown below is a graph of (nonlinear) diode current as a function of diode
voltage.
At the operating point, Q, the static (dc) current and voltage are I and V. Consequently,
the total-variable resistance is R = V/I. Because V and I are constant, R is also the static
resistance of the diode at Q. For incremental (small-signal) variations around Q, a change
in v will produce a corresponding change in i. The resulting resistance is the incremental
resistance:
dv ∆v
r= ≅
di ∆i
Where, r is calculated at operating point Q. This incremental resistance is sometimes
referred to as the dynamic resistance because it involves changes in v and i.
Recommended
Old terminology Notes
terminology
dc (direct current) static constant quantities
ac (alternating current) dynamic ac can mean either bipolar or varying
low-frequency ac quasistatic real dynamics
large-signal total-variable complete model
small-signal incremental linearized model at op. pt.
Transconductance Amplifier Input Resistance
With these distinctions (and preferred language), consider a more involved example of
dynamic input resistance for the amplifier circuit shown above. The amplifier circuit is
linear and involves two capacitances. The (triangular) amplifier element has a
transconductance -Gm = io /vin, where, with -io, the Gm amplifier sinks current with positive
vin. What is the input resistance?
The real component of Zin is the input resistance. Dynamic in this case refers to
incremental resistance resulting from varying quantities. Beginning with the static
resistance, the ideal Gm amplifier element with voltage input will have infinite input
resistance. It is shunted by Cf, which statically is an open circuit. Consequently, with both
paths infinite in static resistance, the input static resistance is infinite. However, the
dynamic resistance is not.
To find the dynamic input resistance, an incremental input current, iin, is caused by an
incremental input voltage, vin, which causes Gm vin of current to be sunk by the Gm
amplifier output. This incremental current splits between the two capacitances (assuming
no load on the amplifier). Summing currents at the output node, in the s-domain,
− Gm ⋅ vin = s ⋅ C L ⋅ vout + s ⋅ C f ⋅ (vout − vin )
Solving this equation for the overall amplifier voltage gain, it is:
vout ( s ) − s ⋅ Rm ⋅ C f +1
=−
vin ( s ) s ⋅ Rm ⋅ (C L + C f )
Where, Rm = 1/Gm. The closed-loop voltage gain has a pole at the origin and a right-half-
plane (RHP) zero. Now the quantity of interest, Zin, can be derived as vin/iin, where:
v
iin = i f = − s ⋅ C f ⋅ (vout − vin ) = s ⋅ C f ⋅ 1 − out ⋅ vin
vin
Solving for Zin by substituting the voltage gain, and putting the result in continued
fraction form:
1 1
Z in = =
v 1
s ⋅ C f ⋅ 1 − out s ⋅ (C f || C L ) +
vin C
Rm ⋅ L + 1
C
f
Where, || refers to the mathematical operation for parallel component values and not
circuit topology. From the Zin expression, the equivalent circuit (a) for the input
impedance (b) is shown below.
From the input, the two capacitances are in series, as shown in (b). (Keep in mind that the
output of the Gm amplifier is a current source, which presents infinite resistance in
parallel with the capacitances.) In parallel with these capacitances, as seen from the input,
is a resistance -- a dynamic resistance -- of value Rm (CL/Cf + 1). This resistance is not the
static resistance, which is infinite, but a resistance that occurs only due to changing
electrical quantities. As vin changes, the output current of the Gm amplifier is input to a
capacitive current divider. The fraction of this current, which is if , is proportional to vin,
thus causing the input to effectively appear to have a resistive component in Zin.
The transconductance amplifier of the previous circuit can be implemented with a single
BJT with static current-source collector load. For simplicity of analysis, assume that the
transistor is ideal (infinite β, zero re). Then the transconductance is 1/RE and Rm = RE. For
the circuit values shown, the series capacitances present to the input 0.9 pF.
This mathematical result has an intuitive causal explanation. Suppose a 1-V step is
applied to the input. The collector will sink 1 mA, divided between the capacitances
according to the current-divider formula. Then 0.9 mA will flow through CL and 0.1 mA
through Cf. The resistance corresponding to this current is 1 V/0.1 mA, or 10 kΩ.
In addition to the current generated by the transistor, the series-C path is also a parallel
component of Zin and presents a non-inverting, non-amplifying, feed-forward path to the
output. The contribution to the output voltage from this path corresponds to the RHP
zero.
Closure