2SC1472(K)

Silicon NPN Epitaxial, Darlington

Application

High gain amplifier

Outline

TO-92 (1)

2
1. Emitter
2. Collector 1
3. Base

3
2
1
2SC1472 (K)

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit
Collector to base voltage VCBO 40 V
Collector to emitter voltage VCEO 30 V
Emitter to base voltage VEBO 10 V
Collector current IC 300 mA
Collector peak current iC(peak) 500 mA
Collector power dissipation PC 500 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

2
 2SC1472 (K)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown V(BR)CEO 30 — — V I C = 1 mA, RBE = ∞
voltage
Collector cutoff current I CBO — — 100 nA VCB = 30 V, IE = 0
Emitter cutoff current I EBO — — 100 nA VEB = 10 V, IC = 0
1
DC current transfer ratio hFE1* 2000 — 100000 I C = 10 mA, VCE = 5 V
1
hFE2* 3000 — — I C = 100 mA, VCE = 5 V
(Pulse Test)
hFE3* 1 3000 — — I C = 400 mA, VCE = 5 V
(Pulse Test)
Collector to emitter saturation VCE(sat) — — 1.5 V I C = 100 mA, IB = 0.1 mA
voltage
Base to emitter voltage VBE(sat) — — 2.0 V I C = 100 mA, IB = 0.1 mA
Gain bandwidth product fT 50 — — MHz VCE = 5 V, IC = 10 mA
Collector output capacitance Cob — — 10 pF VCB = 10 V, IE = 0, f = 1 MHz
Turn on time t on — 60 — ns VCC = 11 V
I C = 100 IB1 = 100 mA
I B2 = –IB1
Turn off time t off — 800 — ns
Storage time t stg — 350 — ns
Note: 1. The 2SC1472(K) is grouped by h FE as follows.
A B
hFE1 2000 to 100000 5000 to 100000
hFE2 3000 min 10000 min
hFE3 3000 min 10000 min

Switching Time Test Circuit Response Waveform

D.U.T. CRT
6k
13 V 90%
100 Input
6k
0.002 0.002 0 10%
P.G. 50
tr, tf ≤ 15 ns 90% 90%
– + – + Output
PW ≥ 10 µs 50 50 10%
–6 V 11 V 0 10%
duty ratio ≤ 10% td tstg
Unit R : Ω
C : µF ton toff

3
2SC1472 (K)

Maximum Collector Dissipation Curve Typical Output Characteristics

600 500

30
35
25
20 8
Collector Power Dissipation PC (mW)

1 6
1 4
1
12

Collector Current IC (mA)

400
10
400 8
300

6
200
200 4
100 PC = 50
2 µA 0m W
IB = 0

0 50 100 150 0 2.0 4.0 6.0 8.0 10

Ambient Temperature Ta (°C) Collector to Emitter Voltage VCE (V)

Collector Cutoff Current vs.

Typical Output Characteristics Collector to Emitter Voltage
200 10,000
0 100
5. 5 Collector Cutoff Current ICEO (nA)
4. 0 RBE = ∞
Pulse 1,000
4.
Collector Current IC (mA)

160
75
3.5
100
120
3.0
10
50
2.5
80
1.0
2.0
40 TC = 25°C
1.5 0.1
PC = 500
1.0 mW
0.5 µA
IB = 0
0.01
0 10 20 30 40 50 0 10 20 30
Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V)

4
 2SC1472 (K)

DC Current Transfer Ratio vs. Collector to Emitter Saturation

Collector Current Voltage vs. Collector Current
80 1.1

Collector to Emitter Saturation Voltage

DC Current Transfer Ratio hFE (×103)

70 VCE = 5 V 1.0 IC = 1,000 IB

Pulse 0°C
Ta = –5
60 0.9
–25
0

VCE (sat) (V)

50 0.8 25

5075 C
0°
10 50
40 0.7 75
=

100
Ta

30 0.6
25
20 0 0.5
–25 0.4 Pulse
10 –50
0 0.3
2.0 5.0 10 20 50 100 200 500 1 2 5 10 20 50 100 200 500
Collector Current IC (mA) Collector Current IC (mA)

Collector to Emitter Saturation Base to Emitter Saturation

Voltage vs. Base Current Voltage vs. Collector Current
2.0
2.4
Collector to Emitter Saturation Voltage

Pulse
Base to Emitter Saturation Voltage

1.8 IC = 1,000 IB
Ta = 25°C
2.0
Ta = –50°C
Pulse
1.6
–25
1.6 1.4 0
VBE (sat) (V)
VCE (sat) (V)

25
20 50 100 200 IC = 500 mA 1.2 50
1.2
75
1.0 100
0.8
0.8
0.4
0.6

0 0.4
1 3 10 30 100 300 1,000 1 2 5 10 20 50 100 200 500
Base Current IB (µA) Collector Current IC (mA)

5
2SC1472 (K)
Input and Output Capacitance vs. Voltage
10 Switching Time vs. Collector Current
Collector Output Capacitance Cob (pF)

30
IC = 100 IB1 = –100 IB2
Emitter Input Capacitance Cib (pF)

f = 1 MHz
8 VCC = 10.5 V
10

Switching Time t (µs)

6 C (I = 0) 3 toff
ib C

Cob(IE = 0) 1.0
4 tstg

0.3
2 ton
td
0.1
0
0.1 0.3 1.0 3 10 30 0.03
Collector to Base Voltage VCB (V) 0.3 1.0 3 10 30 100 300
Emitter to Base Voltage VEB (V) Base Current IC (mA)

Response Waveform
Switching Time Test Circuit
13 V 90%
D.U.T. CRT
Input
0 10%

P.G. 50 0.002 0.002 90% 90%

Unit R : Ω Output
tr, tf ≤ 15 ns C : µF 10% 10%
PW ≥ 10 µs – + – + 0
–6 V 50 50 10.5 V td tstg
duty ratio ≤ 10% ton toff

6
 Unit: mm

4.8 ± 0.3 3.8 ± 0.3

5.0 ± 0.2
2.3 Max
12.7 Min
0.60 Max
0.7

0.5 ± 0.1 0.5

1.27
2.54

Hitachi Code TO-92 (1)

JEDEC Conforms
EIAJ Conforms
Weight (reference value) 0.25 g
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