Mid Term Examination

B.Sc. Semester-V [2021-2022]

Course-BPT-504 [Electronic Devices and Circuits]
Full marks-15 [Fifteen] Time: 45 minutes

Attempt any 3 [Three] out of the following questions each question carries 5
[Five] marks:

1. When is the channel of a JFET said to be pinched off? Explain with a clear sketch the depletion
region before and after pinch-off?

2. In which portion of the drain characteristics is the Q-point of a FET amplifier is chosen and
why? Draw the source self bias circuit of a JFET and depletion-mode MOSFET.

3. The transfer characteristic of an n-channel JFET is given, with usual symbols, by

VGS 2
IDS = IDSS(1 −
VP )

(a) Explain how you can find the pinch-off voltage VP by drawing a tangent to the transfer
characteristic at (VGS = 0).
(b) Find an expression for gm from the above parabolic equation of the transfer characteristic, and
show how gm varies with VGS and IDS.

4. An n-channel JFET operating in the active region carries a drain current of 4 mA when
VGS = − 2 V, and a drain current of 6 mA when VGS = − 1 V. Calculate the pinch-off voltage and
the saturated drain current for VGS = 0 . If VDS = 10 V , find the channel resistance for
VGS = − 2 V, − 1 V, and − 0 V.

5. Draw and explain the voltage-divider bias circuit of a FET amplifier. What are DC and AC load
lines of this circuit?