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Semiconductor plasmon-sensitized broadband upconversion and its


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DOI: 10.1039/C7TA04943A

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Semiconductor plasmon-sensitized broadband


Cite this: J. Mater. Chem. A, 2017, 5,
upconversion and its enhancement effect on the
16559 power conversion efficiency of perovskite solar
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Received 7th June 2017 cells†


Accepted 30th June 2017
Donglei Zhou,a Dali Liu,a Junjie Jin,a Xu Chen,a Wen Xu,*b Ze Yin,a Gencai Pan,a
DOI: 10.1039/c7ta04943a
Dongyu Lia and Hongwei Song *a
rsc.li/materials-a

Photon upconversion (UC) is an attractive strategy to substantially beyond the visible region limited by their intrinsic band gap,
enhance the power conversion efficiency (PCE) of solar cells via which accounts for 55% of the total solar energy.10–12 Conse-
upconverting unavailable near-infrared sunlight to available visible quently, photon energy upconversion has been thought to be
light. However, to date, it is almost infeasible to achieve effective PCE a promising way to harvest of this portion of sunlight and
improvement of solar cells with the assistance of UC materials, limited transform it into available visible light. However the most well-
by their poor UC efficiency and extremely weak and narrowband near- known upconversion materials13–15 (e.g., bulk b-NaYF4:Yb3+, Er3+
infrared absorption. Here, we demonstrate the efficient photon energy with the UC efficiency of 3%) have been used to improve the
UC in semiconductor plasmon mCu2xS@SiO2@Er2O3 (mCSE) nano- power conversion efficiency (PCE) of other types of solar
composites, where the broadband semiconductor plasmon (800– cells11,16–19 (e.g., dye-sensitized solar cells and quantum dot
1600 nm) of mCu2xS serves as an antenna to sensitize UC of Er2O3 sensitized cells). Nevertheless, the improvements of the power
nanoparticles. The overall upconversion luminescence (UCL) of the conversion efficiencies (PCEs) of solar cells based on
composites was dramatically enhanced by a factor of 1000, with upconverters are extremely low and merely serve as a proof of
a maximal inner quantum efficiency of 14.3%. The excitation range was principle, restricted by the lower UC efficiency, the smaller
expanded, ranging from 800 to 1600 nm. As a proof-of-concept, the absorption cross section and narrower excitation band of 4f–4f
highly efficient mCSE nanocomposites were utilized to improve the transitions for upconverters.20 Therefore, to enhance the near-
PCE of perovskite solar cells (PSCs). The expansion of the near- infrared response of PSCs, designing and obtaining a new
infrared response (800–1000 nm) and considerable improvement of class of upconverters with high efficiency as well as broadband
the PCE were obtained, with an optimum PCE of 17.8%. The mCSE absorption of near-infrared light is of high importance.
composites in PSCs enhanced the photocurrent via electron transfer Some lanthanide oxides (e.g., Yb2O3 and Er2O3) demon-
from oxygen defects to the conduction band of TiO2 under irradiation strate efficient UC broadband emissions with an estimated UC
of one sunlight. Under irradiation of 15 suns, the electron transfer and efficiency of as high as 10% under the excitation of a 980 nm
reabsorption of UCL both contributed to the enhancement of PCE. laser diode.21–23 More interestingly, differing from the well-
Our work can provide an insightful thought on boosting UC efficiency known uoride phosphors encountering concentration
as well as broadening the PCE of PSCs. quenching and temperature quenching, lanthanide oxides
even have better performance at high doping concentration
and elevated temperature.24–26 However, the efficient upcon-
Introduction version luminescence (UCL) of lanthanide oxides is always
Perovskite solar cells (PSCs), the fastest-advancing solar tech- obtained under laser irradiation with higher power density,
nology to date,1 have become commercially attractive due to which is both much larger than the power density of sunlight
their low cost,2,3 simple fabrication,4–6 and high efficiency.7–9 and narrower than the spectral range of sunlight. Noticeably,
However, PSCs are usually unable to utilize light (800–1700 nm) Cu2xS, a kind of heavily doped semiconductor material,
displays an intense localized surface plasmon resonance
a
(LSPR) absorption band at near-infrared wavelengths, arising
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and
Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China. from collective oscillations of excess free carriers associated
E-mail: songhw@jlu.edu.cn with constitutional vacancies in the lattice.27–29 It is expected
b
Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta, that plasmon Cu2xS nanoparticles could be explored as an
Midori-ku, Yokohama 226-8503, Japan antenna to sensitize the UCL of lanthanide oxides, degrading
† Electronic supplementary information (ESI) available. See DOI:
10.1039/c7ta04943a

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the threshold power as well as expanding the spectral structure is formed (d(Er) > d(Si) > d(S, Cu)). From the high
absorption range of lanthanide oxides. resolution transmission electron microscopy (HR-TEM) of
In this work, we fabricated mCu2xS@SiO2@Er2O3 (mCSE) the mCSE nanocomposites (Fig. 1f), two different fringe
nanocomposites, which displayed an efficient broadband spacings are determined, 0.307 nm and 0.196 nm, which
emission in the visible region with an optimum UC efficiency of correspond with the spacing of the (2,2,2) plane of cubic
14.3% under 980 nm excitation, enabling UC within 800– Er2O3 (0.307 nm) (JCPDS no. 77-0464) and the (0,1,20) plane
1600 nm excitation. Moreover, the mCSE nanocomposites were of rhombohedral Cu2xS (0.196 nm) (JCPDS no. 47-1748),
successfully applied to improve the PCE (10% enhancement) respectively. The XRD patterns of Cu2xS and mCSE nano-
of PSCs. composites annealed at different temperatures ranging from
400 to 700  C were further recorded (Fig. 1g). The peaks of
pure Cu2xS nanoparticles are indexed to the (0,0,15),
Results (1,0,10), (0,1,20), and (1,1,15) planes of rhombohedral Cu2xS
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Structure and optical properties of mCSE nanocomposites (digenite) with the space group R3 m (JCPDS no. 47-1748),
Scheme 1 shows the fabrication process of mCu2xS@SiO2@- respectively. The peaks of Cu2xS and Er2O3 can be identied
Er2O3 nanocomposites and the structure of mCu2xS@SiO2@- in the patterns of mCu2xS@SiO2@Er2O3 nanocomposites
Er2O3-based PSCs. First, spherical Cu2xS nanoparticles were annealed at 400 and 500  C. While for samples annealed at
synthesized through a hot-injection method,27 which were 600 and 700  C, the peaks of Cu2xS are quite weak and only
mono-dispersed and homogeneous, with an average size of the peak of (0,1,20) plane could be identied. At high
6.5 nm (Fig. 1a). Cu2xS nanoparticles were further capsulated annealing temperatures a part of the Cu2xS particles were
in a SiO2 nanosphere via a modied Stober method,30,31 forming oxidized to CuO, which is veried by the distinguished peaks
mCu2xS@SiO2 with a diameter of 45 nm (Fig. 1b). Then, the of CuO in the pattern of the sample annealed at 700  C. Note
mCu2xS@SiO2@Er(OH)CO3 composites were prepared by that no peaks of SiO2 are observed in the XRD patterns owing
a urea coprecipitation method.26 Aer being annealed at 400– to its amorphous phase. Based on the above, mCSE nano-
700  C for 2 hours, the mCu2xS@SiO2@Er2O3 nanocomposites composites were successfully fabricated.
were nally fabricated with a 7 nm Er2O3 shell. The UV-Vis-Infrared absorption spectra (Fig. 1h) of Cu2xS
To fabricate mCu2xS@SiO2@Er(OH)CO3 composite sensi- and mCSE nanocomposites annealed at different temperatures
tized PSCs, the mCu2xS@SiO2@Er(OH)CO3 composites were ranging from 400 to 700  C were recorded. In pure Cu2xS
mixed with mesoporous TiO2 and then annealed at 500  C for nanoparticles, a surface plasmon absorption band centered at
half an hour. The transmission electron microscopy (TEM) 1200 nm can be conrmed. Differing from the free electron
images of mCSE nanoparticles (Fig. 1c and d) show that the induced localized surface plasmon resonance (LSPR) of novel
Cu2xS particles are distributed in a SiO2 sphere and an Er2O3 metal nanoparticles, the LSPR of Cu2xS nanoparticles stems
shell could be clearly distinguished. Meanwhile, the energy- from the Cu defect induced charge carriers. Based on the
dispersive X-ray analysis (EDX) spectrum of mCSE nano- modied Mie–Drude theory by Luther et al.,28 the localized
composites (Fig. S1†) demonstrates that the mCSE nano- surface plasmon resonance (LSPR) absorption frequency usp
composites are indeed formed. depends on the density of charge carriers (Nh), which can be
The elemental analysis of EDX mapping was further expressed as
employed to identify the internal structure of the mCSE 
30 mh ð1 þ 23m Þ usp 2 þ g2
sample annealed at 500  C (Fig. 1e). It shows that all of the Nh ¼
e2
elements (copper, sulphur, silicon, and erbium elements) are
distributed homogeneously in the sphere and a core–shell where 3m is the dielectric constant of the environmental
medium, e is the elemental charge, 30 is the free space permit-
tivity, mh is the hole effective mass, approximated to be 0.8m0,
where m0 is the electron mass, g is the full-width at half
maximum of the LSPR related absorption peak. The density of
charge carriers (Nh) was estimated to be 3.5  1021 cm3. In the
annealed mCSE nanocomposites, the LSPR absorption
decreases, broadens and shis to the red with increasing the
annealing temperature, which can be attributed to the gradual
oxidation of Cu2xS nanoparticles.32 When the annealing
temperature is above 600  C, the LSPR absorption becomes very
weak and disappears, suggesting that most of the Cu2xS
particles are oxidized and even transformed into CuO, which
can be conrmed by the XRD patterns (Fig. 1g). No obvious peak
is observed in the extinction spectrum of Er2O3 NPs (Fig. 1h).
The extinction decrease of Er2O3 nanoparticles with the
Scheme 1 Fabrication process of mCSE nanocomposites and their increase of wavelength should be attributed to the scattering of
application in PSCs. the Er2O3 nanoparticles.

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Fig. 1 (a) TEM image of Cu2xS nanoparticles. (b) TEM image of mCu2xS@SiO2. (c and d) TEM images of mCSE nanocomposites. (e) Energy
dispersive X-ray (EDX) mapping of the mCSE sample. (f) HR-TEM images of mCSE nanocomposites. (g) XRD patterns of Cu2xS and mCSE
nanocomposites annealed at different temperatures. (h) Extinction spectra of Cu2xS and mCSE nanocomposites annealed at different
temperatures.

UCL of mCSE nanocomposites SiO2@Er2O3 nanocomposites (Fig. 2c). It also demonstrates the
strongest broadband emission intensity illuminated at the
The UCL of all the mCSE and SiO2@Er2O3 composites (Fig. 2a
and S2†) is power-dependent. For the typical mCSE composites same excitation power density of 1.23 W mm2 (Fig. 2d).
(annealed at 500  C), the green 2H11/2/4S3/2–4I9/2 and red Fig. 2e shows the power density dependence of the integral
UCL intensity of SiO2@Er2O3 and mCSE nanocomposites on the
4
F9/2–4I15/2 inner-shell transitions of Er3+ can be clearly distin-
excitation power density of 980 nm light in logarithmic coor-
guished in a lower excitation power range. Owing to the strong
dinates. In general, UCL intensity (IUC) increases with
cross relaxation of 4F7/2 + 4I11/2–4F9/2 for Er3+ ions, the red
increasing excitation power (P) with a power law of IUC  Pn,
emissions are dominant (Fig. 2b). As the excitation power is
where n represents the number of pumping photons required to
high enough (beyond 0.21 W mm2), the narrow-line emis-
excite rare earth ions from the ground state.33,34 For SiO2@Er2O3
sions disappear completely and bright white broadband emis-
sions centering around 650 nm appear and dramatically nanocomposites (independent of annealing temperature), the
increase with excitation power, which can be attributed to the power-density dependence of intensity can be divided into three
periods. In the rst period, before the generation of UC
efficient charge transfer from 4F9/2 of Er3+ to oxygen defect states
broadband emission, the slope is 1.26. In the second period,
through the tunneling effect. Electrons in oxygen vacancy states
accompanying by the generation of UC broadband emission,
further recombine with holes in the valence band of Er2O3,
the intensity increases dramatically with a slope of 10.5. This
generating broadband emissions.24,26 The generation of holes
super-large slope suggests the occurrence of a photon avalanche
can be conrmed by the occurrence of photocurrent accompa-
or thermal avalanche.35,36 In the third period, the slope n drops
nying the broadband emissions in SiO2@Er2O3 and mCSE
composites (Fig. S3a†). In contrast to the SiO2@Er2O3 with the to 1.97 again. The power-density dependence of UCL intensity
same size, the threshold power densities for generating broad- for the mCSE composites is similar to that for SiO2@Er2O3,
except that the rst period is not obvious. This is because the
band emissions in mCSE nanocomposites decrease, depending
threshold power density for the broadband emission of mCSE is
on the annealing temperature of the samples. The sample
too low. Fig. 2f shows the enhancement factor (EF), which is
annealed at 500  C has the lowest threshold power density of
dened as the ratio of UCL intensity of the mCSE composites to
90 mW mm2, which decreases 6 times than that of
that of SiO2@Er2O3 composites as a function of excitation

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Fig. 2 (a) Power-dependent upconversion spectra of mCSE composites annealed at 500  C. (b) Schematic of the mechanism of upconversion
broadband emission in mCSE nanocomposites. (c) Broadband threshold power of SiO2@Er2O3 and mCSE nanocomposites annealed at different
temperatures. (d) Emission spectra of SiO2@Er2O3 and mCSE nanocomposites annealed at different temperatures. (e) Log–log plot of the
upconversion emission intensity against the excitation laser power for mCSE composites. (f) Enhancement factor of mCSE composites
compared to that of the SiO2@Er2O3 composite as a function of excitation power density. (g) Power-dependent upconversion efficiency of
SiO2@Er2O3 and mCSE composites annealed at 500  C. (h) Excitation spectra of SiO2@Er2O3 and mCSE composites annealed at 500  C. The
power density of excitation light was 1.3 W mm2. (i) Simulated electric field intensity distribution of mCSE nanocomposites. The incident light
wavelengths are 808 nm, 980 nm, 1540 nm and 650 nm, respectively. The jEj2 =jE0 j2 represents the averaged electric field enhancement factor.

power density. With the increase of excitation power, the EFs reported until now. Moreover, the absolute brightness of the
rst quickly increase and approach an optimum at the power sample was determined to be as high as 7778 cd m2 under the
density of 0.87 W mm2 and then drastically decrease for all power density of 1.23 W mm2. The inner quantum efficiency of
the annealed samples. The mCSE sample annealed at 500  C mCSE composites increases 2 fold compared to that of the
has the largest EFs (around 1100 times under the excitation SiO2@Er2O3 composites, which can be attributed to the
power density of 800 mW mm2), which is consistent with the coupling of Er2O3 emissions with plasmon Cu2xS nano-
results of Fig. 2b and c. This can be attributed to the stronger particles and the increased temperature induced by extra pho-
LSPR of mCu2xS nanoparticles and better crystallinity of the tothermal effects in mCSE composites (Fig. S3b†). In the light of
samples annealed at 500  C. Note that the UC intensity uctu- our previous result,26 the UCL intensity increases with the
ation for the mCSE nanocomposites is within 4% under increase of temperature in the studied temperature range (<200
980 nm continuous illumination for 160 min (1.23 W mm2), 
C). The excitation spectra of mCSE and SiO2@Er2O3 compos-
which implies their high stability (Fig. S4†). ites are compared (Fig. 2h). In the SiO2@Er2O3 composites, two
In SiO2@Er2O3 and mCSE composites (annealed at 500  C), sharp peaks situated at 800 and 980 nm can be identied,
the power-density-dependent inner quantum efficiency for the corresponding to the 4I15/2–4I9/2 and 4I15/2–4I11/2 transitions. It is
UCL of Er3+ is recorded under 980 nm excitation (Fig. 2g). interesting to observe that in the mCSE composites, the exci-
Naturally, it gradually increases with increasing power density, tation bands are broadened ranging from 800 to 1600 nm. This
from 0.1% to 6% for SiO2@Er2O3 and from 0.3% to 14.3% for could be attributed to the amplication of LSPR to the excita-
mCSE in the range of 0.09–1.47 W mm2. Besides upconversion tion eld and the increase of phonon density in the mCSE,
induced by blackbody radiation,22 the inner quantum efficiency which results in the efficient phonon-assisted transitions of
of 14.3% in mCSE composites is almost the most efficient Er3+.

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In mCSE nanocomposites, on one hand, the LSPR of Cu2xS UC nanocomposites (16.2%). The PSC with mCSE composites
nanoparticles can couple with excitation light/emission light, maintained a PCE of 16.9% aer being stored in a glovebox for
leading to excitation eld enhancement or the Purcell effect, 500 h (Fig. S6†). The average PCE of PSCs with mCSE compos-
and the improvement of the radiative transition rate as well as ites is 17.1% calculated with y PSC devices (Fig. 3c). The Jsc
inner quantum efficiency of UCL. On the other hand, the photo- and Voc both increase until the proportion of mCSE nano-
thermal effect of Cu2xS nanoparticles should occur, resulting composites increases to 5 wt%. The increase of Jsc can be
in an increased temperature, which is benecial to enhance the attributed to the contribution of mCSE composites. The
broadband emission.26,37 To understand the amplication of the increase of Voc can be mainly induced by increasing charge
excitation/emission eld, we simulated the |E|2 surrounding recombination resistance, which is discussed in Fig. 3i. Beyond
the mCSE composites using the nite-difference time-domain 5 wt%, PCEs decrease mainly due to the reduction of the lling
(FDTD) solution (Note 1 in the ESI†), as shown in Fig. 2i. It is factor and photocurrent. Differently, aer introducing the
clear that the |E|2 of Cu2xS is concentrated around the mCSE SiO2@Er2O3 composites, the PCE decreases to 12.6%,
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composites with a maximum intensity enhancement of 90 times accompanying by the reduction of Jsc and Voc. The PSC con-
at the hot spots under the excitation of 980 nm light. When taining mCu2xS@SiO2 composites exhibits a PCE of 16.3%.
changing the wavelength of excitation light to 808 nm or The slight increase of the PCE might be ascribed to the LSPR
1540 nm, the enhancement of |E|2 at the hot spots decreases scattering of mCSE composites. The enhancement of PCE
a little. The enhancement decreases to 12 when changing the induced by the LSPR of mCSE composites was quite little
wavelength to 650 nm (central emission wavelength), because compared to the enhancement induced by noble metal NPs (Au
the 650 nm wavelength is far away from the LSPR central or Ag NPs).38 As the density of free carriers in Cu2xS NPs is one-
wavelength (1200 nm) of Cu2xS nanoparticles. The averaged order lower than that in noble metals, the intensity of LSPR in
electric eld enhancement factors are obtained by calculating Cu2xS NPs is weaker than that in metal NPs. The introduction
the average value of the electric eld intensity enhancement in of SiO2@Er2O3 composites alone is disadvantageous to the PCE.
the mesh range, which shows 15.7 times enhancement at the When the Cu2xS NPs were absent, the light absorption of Er2O3
excitation of 980 nm and 2.5 times at the emission wavelength was quite weak and the contribution to photocurrent was quite
(650 nm). Because the broadband upconversion emission is little. In addition, the SiO2@Er2O3 NPs were a poor conductor
a two-photon process, the enhancement of UCL induced by the and decreased the charge mobility (see EIS results in Fig. 3i and
excitation eld amplication is calculated to be 220 times Table S3†), resulting in a decreased photocurrent.
(Fig. 2f). In the light of the result of the inner quantum effi- To elucidate the mechanism of enhancement of PCE, the UV-
ciency, the coupling of LSPR with emission light induces about Vis-Infrared extinction spectra of the mesoporous TiO2 layer
2-fold UCL enhancement. As the excitation power increases, the and perovskite layer were recorded (Fig. 3d). The TiO2 layers
temperature in mCSE composites (Fig. S3b†) is about 100–250 K mixed with mCu2xS@SiO2 and mCSE composites have an
higher than that in SiO2@Er2O3 composites. According to the enhanced extinction, especially in the infrared region. The
previous reports,26 the luminescence enhancement induced by extinction of the TiO2/perovskite layer mixed with mCSE
temperature variation in mCSE composites is about 2–3 folds. composites enhances 40% in intensity in the near-infrared
Therefore, the practical UC enhancement is roughly consistent region compared to that without mCSE composites, while it
with the theoretical prediction. only enhances 5% in the visible region, indicating that the
Overall, the intense strength, high inner quantum efficiency mCSE composites in the solar cell had little inuence on the
(14.3%) and broad excitation bands (800–1600 nm) of mCSE light harvesting of the perovskite layer. The incident photon-to-
composites provide them with the possibility to be an ideal current conversion efficiency (IPCE) spectra of PSCs without
upconverter in the application of PSCs. mCSE composites all demonstrate the generation of photocur-
rent in the range of 370 nm to 820 nm (Fig. 3e). Consistent
with the extinction spectra (Fig. 3d), the generation of photo-
Perovskite solar cell with mCSE upconverter current in the PSC with mCSE composites extends to 1000 nm.
Scheme 1 illustrates the PSC with the mCSE upconverter, con- This can be attributed to the fact that mCSE composites
sisting of a compact TiO2 layer (50 nm), mesoporous TiO2 absorbed the near-infrared light and contributed to the photo-
mixed with 0–10 wt% mCSE and a perovskite layer (520 nm), current. The response of photocurrent in the region from 400 to
a hole transport layer (150 nm) and an Au electrode (80 nm) 800 nm was enhanced as well. This can be attributed to the
(Fig. 3a). The cross-sectional image (Fig. S5†) indicates that the decreased charge transfer resistance (Fig. 3i) in the presence of
solar cell is at and uniform. The PCEs of four groups of PSCs, mCSE composites. Although the TiO2 layer mixed with
the traditional PSC, the cell containing SiO2@Er2O3, the cell mCu2xS@SiO2 exhibits strong absorption in the near-infrared
containing mCu2xS@SiO2 and the solar cell containing mCSE region (Fig. 3d), it does not effectively contribute to the photo-
composites were compared (Fig. 3b and Table S1†). PSCs with current and extend the response region (Fig. 3e), indicating that
different proportions of upconverters in weight were prepared the response in the range of 800–1000 nm of PSCs does not
with their efficiencies shown in Table 1. Interestingly, the PSC come from the contribution of LSPR absorption of Cu2xS
with the optimized (5 wt%) mCSE nanocomposites displays directly. Meanwhile, the solar cell containing mCSE composites
the highest PCE of 17.8% (Fig. 3b and Table S1†), which is exhibits response and the photocurrent (Jsc) increases with the
enhanced by 10% compared with that of the solar cell without 980 nm power density increasing (Fig. 3f and S7†), indicating

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Fig. 3 (a) Cross-sectional SEM image of the PSC. The mCSE composites were mixed with mesoporous TiO2 5% in weight. (b) Current–density/
voltage curves of the best-performing PSC, solar cell with SiO2@Er2O3, solar cell with mCu2xS@SiO2 and solar cell with mCSE composites under
simulated AM1.5, 100 mW cm2 irradiance (simulated sunlight). (c) PCE distribution and the average PCE of PSCs, PSCs with SiO2@Er2O3, PSCs
with mCu2xS@SiO2 and PSCs with mCSE composites. (d) UV-Vis-Infrared extinction spectra of the mesoporous TiO2 layer and perovskite layer
with/without mCSE composites. (e) IPCE curves of the best-performing PSC. (f) Current–density/voltage curves of the PSC with mCSE
composites under AM1.5G standard sunlight and an additional 980 nm NIR laser. (g) Current–density/voltage curves of the best-performing PSC
under simulated AM1.5, 100 mW cm2 irradiance (simulated sunlight) with different intensities. The solar irradiance intensity was tuned by using
a convex lens. The photo-current of PSCs under 7 suns or 15 suns was normalized to 1 sun. (h) Emission spectra of mCSE composites,
composites in the TiO2 layer and composites in the PSC irradiated by a concentration of 15 suns with a 900 nm short-pass filter. (i) Electro-
chemical impedance spectroscopy (EIS) of CH3NH3PbI3 PSCs containing mCSE composites. (j) Schematic illustration of the energy transfer
process in CH3NH3PbI3 solar cells using mCSE composites.

Table 1 Open-circuit voltages, short-circuit currents, fill factors and Further experiments demonstrate that solar cells with mCSE
efficiencies of PSCs with 0–10 wt% mCu2xS@SiO2@Er(OH)CO3 composites have better performance at the higher power irra-
composites
diance of simulated sunlight (Fig. 3g). For the sake of compar-
Proportion (wt%) 0 1 3 5 7 10 ison, the photo-current of PSCs under 7 suns or 15 suns was
Voc (V) 1.07 1.07 1.08 1.1 1.1 1.09 normalized to 1 sun. Note that the efficiency of the PSC without
Jsc (mA) 23.3 24.1 24.7 25.1 24.8 24.5 composites varies little when increasing the solar irradiance
Fill factor (%) 65 64 64 64 59 58 intensity. The irradiance power dependence of the PCEs of the
Efficiency (%) 16.2 16.5 17.1 17.8 16.1 15.5
PSCs with mCSE composites indicates that the contribution of
mCSE composites to the photocurrent is power dependent,
the contribution of the UC process. The current transient vs. which is consistent with the higher quantum efficiency and
time curves (Fig. S8†) showed that the photocurrent of the PSC more effective electronic transition from the valence band to
with mCSE composites was higher than that of the PSC with oxygen defects in mCSE composites at the higher excitation
mCu2xS@SiO2 when 980 nm light was on. All these results power. The PCE of the best-performing solar cell reached 18.8%
indicate that the infrared light is absorbed by the UC mCSE at a concentration of 15 suns.
composites and further contributes to the enhanced photo- The UC broadband emission of mCSE composites was
current and PCEs of the PSC. observed under a concentration of 15 suns using a 900 nm

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short-pass lter (Fig. 3h), indicating that the infrared light can electrons in the oxygen defects are directly transferred to the
be effectively harvested by the mCSE composites by the conduction band of TiO2. The other part of electrons are relaxed
upconversion process. The emission intensity decreases by the radiative transition process, which can be reabsorbed by
dramatically aer mixing them with the TiO2 layer (FTO/TiO2 the perovskite layer. Above all, the incorporation of mCSE
(mCSE)), which can be attributed to the luminescence composites provides a promising route to reduce the non-
quenching by the TiO2 layer. The emission intensity of the absorption photon loss in PSCs.
mCSE composites decreases further but only a little aer the
introduction of perovskite (FTO/TiO2 (mCSE)/perovskite), which
implies that electrons in the oxygen defects are mainly trans-
Conclusions
ferred to TiO2, leading to the enhanced photocurrent of solar A novel kind of photon energy UC material, semiconductor
cells. Considering that the irradiation might induce thermal plasmon-sensitized mCSE nanocomposites, was prepared,
effects, the temperature of the PSCs was measured by using which could efficiently convert broadband infrared light (800–
Published on 30 June 2017. Downloaded by Jilin University on 16/08/2017 02:27:59.

a thermocouple (Table S2†). Irradiated by the AM1.5G standard, 1600 nm) to visible beneting from the LSPR of Cu2xS. The
the temperatures were nearly the same for the PSCs with and nanocomposites demonstrated three-order UCL enhancement,
without mCSE composites. Under irradiation of a concentration a considerably decreased threshold power density compared to
of 15 suns, the temperature of the PSC device with mCSE that of SiO2@Er2O3 and an inner quantum efficiency as high as
composites increased from 22 to 31  C. Such a small variation of 14.3% under the excitation of 980 nm light (1.5 W mm2). The
temperature should have no inuence on the lifespan and light mCSE upconverter was then applied in a PSC and led to an
harvesting of the perovskite layer. To evaluate the stability of expanded response in the range of 800–1000 nm and 10%
PSCs continuously working under a concentration of 15 suns, enhancement of PCE under standard solar irradiation. The PCE
the PCEs of the PSC with/without mCSE composites were of the PSC reached 17.8% aer introducing the mCSE
measured (Fig. S9†). The PCE of the PSC with mCSE composites composites, which increased with increasing the irradiating
decreases by 10% aer irradiation by 15 suns for 10 h contin- power, and approached 18.8% at a concentration of 15 suns.
uously, while it decreases by 8% for the PSC without mCSE This work displays a highly effective UC material and provides
composites. The decreases of PCEs are nearly the same, indi- a method of enhancing the utilization of infrared light via the
cating that the introduction of mCSE composites into PSCs had upconversion process in PSCs.
no effect on the stability and lifespan of PSCs. To ascertain the
location of the oxygen defect level of mCSE composites relative
to the vacuum level, ultraviolet photoelectron spectroscopy Experimental section
(UPS) studies were performed (Fig. S10†). The results showed Synthesis of Cu2xS nanoparticles
that mCSE composites possess an oxygen defect level near
The Cu2xS nanoparticles were synthesized via a typical hot-
4.1 eV (Fig. 3j), which matched with the conduction band of
injection method.27,28 The copper precursor was prepared by
TiO2 (4.2 eV). Electrons on the oxygen defect level should
mixing CuCl (0.01 mol) with a mixture of 4 mL of oleic acid (OA)
transfer to the conduction band of TiO2, leading to the decrease
and 5 mL of oleylamine (OM) at 130  C for 30 min. Then the as-
of UC broadband emission of mCSE composites (Fig. 3h). The
prepared copper precursor was cooled to room temperature.
electrochemical impedance spectroscopy (EIS) measurements
Meanwhile, the sulfur precursor was prepared by dissolving
(Fig. 3i, S11 and Table S3†) demonstrate that the charge transfer
sulfur powder (0.01 mol) in 40 mL of octadecene at 200  C for
resistance (Rco  17.4 U) in the PSC with mCSE composites is
30 min. And the sulfur solution was maintained at 180  C, fol-
much lower than that in the pure PSC (Rco  49.6 U). This
lowed by swi injection of the copper precursor. Before cooling
suggests that the mobility of electrons in the PSC with mCSE
to the room temperature, the resulting solution was maintained
composites was enhanced. The charge recombination resis-
at 180  C for 5–15 min. Cu2xS nanoparticles in the solution
tance (Rrec) in the PSC with mCSE composites increased
were precipitated by adding excess acetone and collected by
compared to that of the pure PSC, which resulted in the
centrifugation of the suspension (two times). Finally, the
enhanced Voc in Fig. 3b.
precipitate was redispersed in an organic solvent such as carbon
Fig. 3j shows the schematic illustration of the energy transfer
tetrachloride, trichloromethane, or cyclohexane.
process of the PSC with mCSE composites. Under irradiation of
one sunlight, as the power density of sunlight is much lower
than the power threshold for generating broadband emission of Synthesis of mCu2xS@SiO2@Er2O3 nanocomposites
mCSE composites, the mCSE composites absorbed the infrared The as-prepared Cu2xS nanoparticles (0.2 g), 10 mL cyclo-
light and electrons in the ground state of Er3+ were populated to hexane, 0.5 mL ammonia, 10 mL Triton X-100, 8 mL hexyl
the oxygen defect level and then transferred to the conduction alcohol, 2 mL water, and 0.1 mL TEOS were mixed together and
band of TiO2, contributing to the charge mobility and photo- stirred for 24 hours at room temperature. Then, the precipitates
currents. The presence of Cu2xS NPs can enhance the were collected and washed three times with alcohol. Aer that,
absorption of sunlight by Er2O3. At a concentration of 15 suns, the precipitates (mCu2xS@SiO2) were dissolved in deionized
the mCSE composites displayed a broadband upconversion water, added into 0.3 g Er(NO3)3 and 2.5 g urea, heated at 90  C
emission, which was mainly quenched by the TiO2 layer or for an hour and cleaned with alcohol three times. Then, the
reabsorbed by the perovskite layer. In other words, a part of obtained sample was annealed at 500  C for 2 hours. Finally, the

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Journal of Materials Chemistry A Communication

mCu2xS@SiO2@Er2O3 composites were collected. For D. L., W. X., G. P., and H. S. analyzed the data and discussed the
comparison, SiO2@Er2O3 NPs were synthesized by a similar result. D. Z., W. X. and H. S. were primarily responsible for the
method. ESI. D. Z. prepared the Figures. H. S. and D. Z. wrote the main
manuscript text. All the authors contributed to data analysis,
Solar cell fabrication discussions and manuscript preparation.
First, FTO glasses were cleaned in an ultrasonic bath containing
ethanol for 15 min and treated in a UVO cleaner for 15 min. To Acknowledgements
make a dense TiO2 blocking layer, the cleaned FTO glasses were
This work was supported by the Major State Basic Research
coated with 0.15 M titanium diisopropoxide bis(acetylaceto-
Development Program of China (973 Program) (no.
nate) (75% Aldrich) in 1-butanol (Aldrich) solution by a spin-
2014CB643506), the National Key Research and Development
coating method, which was heated at 125  C for 5 min. FTO
Program (2016YFC0207101), the National Natural Science
glasses with TiO2 precursor solutions were heated at 500  C for
Published on 30 June 2017. Downloaded by Jilin University on 16/08/2017 02:27:59.

Foundation of China (grant no. 61674067, 11304118, 11504131,


30 min. On the prepared dense TiO2 blocking layer, the nano-
11374127, 81201738, and 11674127), the Jilin Province Natural
crystalline TiO2 paste mixed with mCu2xS@SiO2@Er(OH)CO3
Science Foundation of China (No. 20160418055FG), Jilin
composites was prepared and was deposited by spin-coating
Provincial Economic Structure Strategic Adjustment Fund
and the deposited lm was annealed at 500  C for 30 min to
Special Projects (No. 2014Y082), the Jilin Province Natural
produce a mesoporous TiO2 lm with mCu2xS@SiO2@Er2O3
Science Foundation of China (No. 20150520090JH,
composites. PbI2 was deposited on the surface of the TiO2 layer
20170101170JC), the Jilin Province Science Fund for Excellent
by vapor deposition. Then the lm was immersed in a CH3NH3I
Young Scholars (No. 20170520129JH, 20170520111JH) and the
solution (10 mg mL1) to form the (CH3NH3)PbI3 perovskite
Graduate Innovation Fund of Jilin University (No. 2016191).
layer. The hole transport material spiro-OMeTAD was spin-
coated on the lm at 3000 rpm. For the counter electrode, 100
nm-thick Au was deposited on the top of the HTM over layer by Notes and references
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