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Based on the prior knowledge in semiconductor and knowing the importance of transistor
biasing and its three regions of operation; discuss between the members of the group on how
electron movement is affected based on the (Forward or Reverse) biasing applied in a PNP
transistor.
There are three types of biasing of diodes-
1. Forward biasing: In forwarding bias, the P terminal is connected to the battery's positive terminal
and the N terminal to the negative.
2. Reversed bias: In reversed bias, the P terminal is connected to the battery's negative terminal and
the N terminal to positive.
3. No bias or unbiased: when there is no biasing applied to the diode. For the PNP transistor, when
VBE is used, then PN terminals will be forward bias and the force applied at P and N terminals
by the battery to move the electrons and holes due to this force, electron holes charges can easily
penetrate the PN junction and moved across the intersection and therefore current will flow in
opposite directions of battery applied. NP will be reversed bias when we use it, and it will start
attracting the electrons and holes at the terminal due to opposite charges applied at terminals. The
junction width will increase as we increase applied voltage. A time comes when depletion width
breaks and a large amount of current will flow in this current, called reverse Saturation current.
Explain the difference among the saturation, cut-off, and active regions.
Saturation is the entirely conducting condition in a semiconductor junction. In diode and bipolar
transistor applications, the term is most often used. A bipolar transistor is considered to be saturated when
the base-emitter current reaches a maximum under changing bias. While cutoff is a state of negligible
conduction that occurs when a control parameter typically a well-defined voltage or electric current, but it
could also be incident light intensity, or a magnetic field is lowered or increased beyond a value or the
conduction threshold, it is a property of several types of electronic components. The transition from
normal conduction to cutoff may be more or less sudden, depending on the type of device in issue, and
the rate of this transition also varies substantially. Finally, the active region is the region between cutoff
and saturation. The collector-base junction remains to reverse biased in the active part, but the base-
emitter hub remains forward biased. As a consequence, the transistor will continue to function normally
in this location.