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內容
白光發光二極體用之螢光粉原理、組成、製作與發展
量子點原理、合成與顯示元件
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白光發光二極體用之
螢光粉原理、組成、
製作與發展
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Colors Perceived
Red 630-780
Orange 600-630
Yellow 565-600
Green 500-565
Blue 435-500
Violet 380-435
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10 000 K Color Appearance
=
Color temperature
Kelvin (K)
0°C = 273 K
1000 K
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sky
10 000 K
Light of the North
6000 K
Daylight
In the afternoon
5000 K
Sunlight
Twilight
2000 K
Sunset
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Mercury
4100 K
Neutral white
Ceramic discharge
Artificial lighting
3000 K
“Crisp” warm
White sodium
2500 K
“Cosy” warm
Sodium
1950 K
“Functional” orange
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gives indication of:
Color Temperature appearance of light
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Color Temperature
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Color Rendering index; Ra (演色性)
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Color Temperature & Color Rendering
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The Nobel Prize in Physics 2014
Nobel Prize in Physics 2014
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Taipei 2017 Universiade 8/19-30/2017
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Phosphors for Solid State Lighting-
White Light-emitting Diodes
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GaN Blue Chip/YAG for WLEDs
Nichia
(light)
(Phosphor)
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Y3Al5O12;Yttrium Aluminum Garnet ( YAG )
Y(X)
X3(A3B2)O12
Al;Tetrahedral(A) Cubic (I a -3 d)
Engrgy transfer
Al;Octahedral(B)
H A A H
H H A H
H
H: Host (Y3Al5O12)
A Activator (Ce3+)
A: H A H H
H H A
A H
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Ce3+
5d
4f
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Packaged LED Cost
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LED industry chain in Taiwan
Epistar
Equipment Lextar
Everlight
CYT、WEC、Single
Unity Opto Technology
Well、Fittech、
Lumileds (Shanghai)
Wecon Rapitech
Mitsubishi (Japan)
Merck (Germany)
Substrate Epi-Wafer Packaging Application
(Ref: http://www.lumileds.com)
Three Methods of Generating White Light from LED
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螢光粉製作方法
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Solid state reaction
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Nitrogen Gas Pressure Syst
- 2300 oC - 0.95 MPa (9.5 atm)
1900 ℃ 3 hours
@ 0.90 MPa N2
SrSi6N8
SrSi6N7.95O0.05
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檸檬酸鹽凝膠法合成YAG粉體
HO M 黃灰色粉末
+ H H
O 於1000℃之空氣中煆燒
H N N H
OH 24小時
HO CH2CH2
O H H 黃色粉末
M
OH H N N H HO + 於1500℃之空氣中燒結
O CH2CH2 O
24小時
O
HO 黃色粉末
OH H H 於1500℃之氮氫(95%/5%)混合
OH H N N H
+ 還原氣體中退火6至12小時
O CH2CH2
M 產物
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Citrate Gel
SEM
-鈰摻雜釔鋁氧石榴石微細螢光粉粉末的製備方法
(台灣發明專利號碼1235231)
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白光發光二極體之發展
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CCFL LED
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http://digiphoto.pixnet.net/blog/post/24444745
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Competition of lighting equipments
Competition of lighting
equipments
Color
temperature (K)
2,500~3,000 3,000~10,000 3,000~10,000
Response time <100 ms <60 ms <0.001 ms
Luminescence
Heat Gas cold
Life time ~1,000 h ~ 5,000 h ~50,000 h
Electricity 100 % Saving 50 % Saving 90 %
consumable
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Black Pearl-Nikkei
Taiwan LED Lighting Architecture (Nichia,7000sets)
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Everlight
Ceiling
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量子點原理、製作與顯示元件
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1.量子點原理
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⊙ 多電子原子中軌域填入的次序
7N 1s22s22p3
1s 2s 2p
1s22s22p4
8O
1s 2s 2p
1s22s22p5
9F 1s 2s 2p
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The Molecular Orbital Model (MO)
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e.g. The combination of hydrogen 1s atomic orbitals to form
molecular orbitals
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於分子中只有分子軌域可以 ∵兩個分子軌域間的
被電子占據,表示氫原子之 電子恰分布兩原子核
1s原子軌域不再存在,因為 的中心線 (即核間軸)
氫分子將有新的軌域生成
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‧ MO1 之能階比 H 原子之 1s orbital 還低,而MO2則
比單一氫原子的 1s 軌域高
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A molecular orbital energy – level diagram for the H2 molecule
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⊙ Bond order = ( number of bonding electrons
–– number of antibonding electrons ) / 2
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e.g. Bond order ==> H2 , H2
H2-
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e.g. He2 是否 stable ?
B.O = 2 – 2 = 0
2
∴ He2 unstable
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Bonding in Homonuclear Diatomic Molecules
e.g. Li2
Li electron configuration : 1s2 2s1
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Figure 14.34 : Li2 energy-level diagram
∵ B.O. = (2 – 0)/2 = 1
Li2 => stable molecules ( 但事實上常溫常壓下,許
多Li 原子是互相鍵結在一起,
而以固體之型式存在 )
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e.g. Be2 ( 4 個價電子)
B.O. = (2 – 2) / 2
=0
∴ Be2 unstable
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物體如何導電—Band Theory
電子未填滿
e- e- 能帶
E = = (Energy Band)
(能階) e- e -
e- e-
電子填滿
1H 2H 3H NH
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Intrinsic semiconductors
× Band structure of
Semiconductor (Si) band
Empty band→conduction
×
× ×
σ*band
Si1 Si2
1
2
σband
3s23p2 sp3 Valence band →full
4個價電子 hybridization
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金屬、半導體、絕緣體的導電模式
金屬
半導體 絕緣體
e-
e-
e-
e- Phonon
聲子
不需給予能量 需給予能量0.5~3 eV 需給予能量≧6 eV
(無能階差) (能階差0.5~3 eV) (能階差≧6 eV)
導電性佳 導電性一般或不良 導電性不良或不導電
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Ref: Quantum Dots conference 2014-Dr. Jonathan Owen
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Ref: Quantum Dots conference 2014-Dr. Jonathan Owen
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Quantum dots
ℎ2𝜋2
𝐸𝑛 = 𝐸𝑔 +
2𝜇𝑅2
En = Band gap of quantum dots
Eg = Band gap of bulk semiconductor
h = Planck’s constant
R = Radius of quantum dots
m = Reduce mass of exciton
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Ref: Quantum Dots conference 2014-Dr. Jonathan Owen
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Ref: Quantum Dots conference 2014-Dr. Jonathan Owen
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Perovskite
Mineral
Cubic structure CaTiO3
A X
B
ABX3 Photodectors
A= Cs+,CH3NH3 + (MA+),
CH(NH2)2 (FA+)
B = Pb, Sn
X = Cl, Br and I Solar cells
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2. 量子點製作
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3. 量子點之重要
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Why we need to use perovskite quantum dots in LEDs?
Ref : https://www.cnet.com/how-to/should-you-be-worried-about-8k-tv/
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PL
LCD LCD(LED)
(flourescent) Q-LCD
EL
OLED QLED
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QLED
Ref. https://www.youtube.com/watch?v=CxwXK
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On Chip type Film type
Advantages: Advantages:
Low cost
Commercial product (3M QDEF)
Easy fabrication
Highly stability
Mini display (cell phone, tablet,
flash light) Disadvantages:
Disadvantages: Only for bigger display (TV,
Photo stability Laptop)
Thermal stability High cost
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Challenges :
Solutions :
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Various QDs
Cd-QDs InP-QDs Perovskite QDs
CsPb(Br1-x/Ix)3
x=0
Wavelength (nm)
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White light LEDs Organic Light emitting diode (OLEDs)
Q-LED (PL) QLED (EL)
Blue chip
White light
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Q-LED (PL)
β-SiAlON
green phosphor
f-d transition
50~55 nm
K2SiF6:Mn4+
red phosphors
2E -4A transition
g 2g
~50 nm
Quantum dots
CB-VB transition
20~40 nm
Ref: Nat. Mater, 2015, 14, 454.
Ref: Nano Lett., 2015, 15, 3692.
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QLED (EL)
OLED Advantages:
Commercial product
(Sumsung TV)
Highly luminescence
blue device
Disadvantages:
High cost
Ref : Chem. Mater.,2006, 18, 5789.
Lifetime
QD-LED Advantages:
High NTSC color gamut
low cost
Good Lifetime
Disadvantages:
Toxic QDs (CdSe/ZnS)
Immature technology
Ref: ACS Nano., 2013, 7, 9019.
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未來展望
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Micro and Mini LEDs
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MicroLED - self-emitting display
technology that uses very small
LED subpixels.
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Display technologies
each pixel
RGB mixture create colors
OLED
OLED emit light from its
organic thin film
microLED
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Comparative performance of MicroLED
Parameters LCD OLED MicroLED
Reaction time ms μs ns
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MicroLED assembly
Massively Parallel Transfer Arrays Monolithic Integration
“Pick-and-place”
backplane
‘picker’
epiwafer
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MicroLED market
http://www.ecouterre.com/
http://www.ledinside.com/
https://www.linkedin.com/pulse/virtual-augmented-
reality-vrar-change-workplace-forever-onesto
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Ref.: USA DOE, LED report 2009; Stanley Myers, SEMI, “Components of
Supply Chain Excellence,” SSL Workshop, Fairfax VA, April 21, 2009.
Evolution of Fluorescent-materials
Market
Applications
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Published books
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