• Major points to consider when selecting a process flow involving multiple layers

and materials.

Problems

Problem 1: Review

In this practical problem a student is to find first-hand the cost of facilities and equipment
related to MEMS industrialization and research. Suppose you are charged with building
a microfabrication research facility and are to buy all pieces of equipment necessary to
perform a process depicted in Figure 2. For the purpose of completing this problem, we
assume that major equipments needed in this process include: a photoresist spin coater, a
contact aligner or a stepper, a metal evaporator, a thermal oxidation furnace, a LPCVD
deposition system for polycrystalline silicon, a light microscope with at least 40x
magnification power, a plasma etcher, and a surface profile measurement tool (called a
surface profilometer). Form a team of three students and research prices of used
equipment items from a used equipment dealer (or dealers). Find prices of representative
systems capable of handling at least 4-in-diameter wafers. Compile a spreadsheet listing
each item, the manufacturer, the model number, and the total cost of all major
equipments identified above.

Problem 2: Review

The equipment listed in the previous problem are related to processing. However, many
equipment items are of the behind-the-scene type, for example, those used for sustaining
the operation of clean room environment. Investigate the cost of a new or used system
for generating deionized water, which is a critical piece of equipment for maintaining
stability of chemistry and products. Consult published price information from used-
equipment or new-equipment vendors.

Problem 3: Fabrication
Find a software for drawing MEMS mask layout, and one for drawing process diagrams.
Install those software titles to a convenient computer for future access. Free softwares
are available on the web, such as xkic (for circuit layout). Drawings of process flow can
be made using a variety of software titles. Try to use specialized drawing software
instead of built-in drawing tools in word processors and presentation tools. Specialized
software offers better and easier control of rendering details. (Hint: An instructor may
specify common layout and drawing tools for the entire class).
Problem 4: Fabrication

Draw the fabrication process for the pressure sensor discussed in the text (Figure 6).
Expand the diagram to include all distinct steps, including detailed lithography steps.
Part of the purpose of this exercise is for each student to identify, acquire and become
familiar with a drawing software. Try to represent geometric profile faithfully by

Instructor's Solutions Manual to Accompany Foundations of MEMS by Chang Liu, ISBN 0-13-147483-9.
© 2006 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. 21
This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced,
in any form or by any means, without permission in writing from the publisher.
 including details such as coverage on sidewalls and slopes. (Hint: if necessary, a reader
may benefit by reading sections in Chapter 10 and 11 before proceeding. Alternatively,
an instructor of a class may discuss materials in Chapters 10 and 11 before assigning this
homework problem).

Problem 5: Fabrication
Draw the fabrication process for the surface micromachined cantilever discussed in the
text (Figure 7). Include all detailed steps, including photoresist spinning, development,
and removal. Try to represent geometric profile faithfully by including details such as
coverage on sidewalls and slopes.
Problem 6: Fabrication

In the bulk micromachining process for pressure sensors presented in this chapter (Figure
5), what is the reason that a photoresist layer must be used to pattern oxide, which then
serves as a mask to silicon etching? Is it possible to abbreviate the process by using
patterned photoresist as the silicon-etching mask? Explain the reason. (Find quantitative
evidence and data.)

Answer:

Photoresist would dissolve in the wet silicon etchant. According to Table II of [56], the
etch rate of KOH on photoresist is greater than 13 µm/min, whereas the etch rate on
oxide is only 7.7 nm/min.

Problem 7: Fabrication
Refer to the process described in Figure 5. If silicon nitride is used instead of silicon
oxide, what is the proper chemical treatment to reach step e and h from d and g,
respectively?

Answer:

From step d to e, the silicon nitride can be etched by using plasma etch with photoresist
as a mask.

From step g to h, the etchant is unchanged – wet silicon etchants. Candidate wet etchants
include EDP, KOH, or TMAH.

Problem 8: Fabrication

Draw the cross-section process flow of floating gate transistors discussed in Ref. [57].
Include detailed steps such as photoresist spin coating, development, and stripping. Do
not include details of circuits fabrication.

Instructor's Solutions Manual to Accompany Foundations of MEMS by Chang Liu, ISBN 0-13-147483-9.
© 2006 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. 22
This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced,
in any form or by any means, without permission in writing from the publisher.