IRF540, SiHF540

Vishay Siliconix

Power MOSFET

FEATURES
PRODUCT SUMMARY
• Dynamic dV/dt Rating
VDS (V) 100
• Repetitive Avalanche Rated Available
RDS(on) () VGS = 10 V 0.077
• 175 °C Operating Temperature RoHS*
Qg (Max.) (nC) 72 COMPLIANT
•F ast Switching
Qgs (nC) 11
Qgd (nC) 32
• Ease of Paralleling
Configuration Single • Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
D
TO-220AB DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combi nation of fast swi tching,
ruggedized device des ign, low on -resistance a nd
G
cost-effectiveness.
The TO-220AB package is univers ally preferred for all
S commercial-industrial app lications at powe r dissipation
D
G S levels to approximately 50 W. The low thermal resistance
N-Channel MOSFET
and low package c ost of th e TO- 220AB con tribute to its
wide acceptance throughout the industry.

ORDERING INFORMATION
Package TO-220AB
IRF540PbF
Lead (Pb)-free
SiHF540-E3
IRF540
SnPb
SiHF540

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER S YMBOL LIMIT UNIT
Drain-Source Voltage VDS 100
V
Gate-Source Voltage VGS ± 20
TC = 25 °C 28
Continuous Drain Current VGS at 10 V ID
TC = 100 °C 20 A
Pulsed Drain Currenta IDM 110
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energyb EAS 230 mJ
Repetitive Avalanche Currenta IAR 28 A
Repetitive Avalanche Energya EAR 15 mJ
Maximum Power Dissipation TC = 25 °C PD 150 W
Peak Diode Recovery dV/dtc dV/dt 5.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175
°C
Soldering Recommendations (Peak Temperature) for 10 s 300d
10 lbf · in
Mounting Torque 6-32 or M3 screw
1.1 N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 440 μH, Rg = 25 , IAS = 28 A (see fig. 12).
c. ISD  28 A, dI/dt  170 A/μs, VDD  VDS, TJ  175 °C.
d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91021 www .vishay.com
S11-0510-Rev. B, 21-Mar-11 1 http://www.Datasheet4U.com

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF540, SiHF540
Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMB OL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 62
Case-to-Sink, Flat, Greased Surface RthCS 0.50 - °C/W
Maximum Junction-to-Case (Drain) RthJC - 1.0

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 100 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.13 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V
Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA
VDS = 100 V, VGS = 0 V - - 25
Zero Gate Voltage Drain Current IDSS μA
VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250
Drain-Source On-State Resistance RDS(on) V GS = 10 V ID = 17 Ab -- 0.077 
Forward Transconductance gfs VDS = 50 V, ID = 17 Ab 8.7 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V, - 1700 -
Output Capacitance Coss - VDS = 25 V, 560 - pF
Reverse Transfer Capacitance Crss - f = 1.0 MHz, see fig. 5 120 -
Total Gate Charge Qg -- 72
ID = 17 A, VDS = 80 V,
Gate-Source Charge Qgs -- VGS = 10 V 11 nC
see fig. 6 and 13b
Gate-Drain Charge Qgd -- 32
Turn-On Delay Time td(on) -1 1 -
Rise Time tr VDD = 50 V, ID = 17 A -4 4 -
ns
Turn-Off Delay Time td(off) -5 Rg = 9.1 , RD = 2.9, see fig. 10b 3 -
Fall Time tf -4 3 -
Between lead, D
Internal Drain Inductance LD -4 .5 -
6 mm (0.25") from
nH
package and center of G

Internal Source Inductance LS die contact -7 .5 -

S

Drain-Source Body Diode Characteristics

MOSFET symbol
Continuous Source-Drain Diode Current IS showing the
D
-- 28
integral reverse G
A
Pulsed Diode Forward Currenta ISM p - n junction diode S
- - 110

Body Diode Voltage VSD TJ = 25 °C, IS = 28 A, VGS = 0 Vb -- 2.5 V

Body Diode Reverse Recovery Time trr - 180 360 ns
TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μsb
Body Diode Reverse Recovery Charge Qrr - 1.3 2.8 μC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

www.vishay.com Document Number: 91021

2 S11-0510-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF540, SiHF540
Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

VGS 102
102 Top 15 V
10 V 25 °C
8.0 V
ID, Drain Current (A)

ID, Drain Current (A)

7.0 V
6.0 V 175 °C
5.5 V
5.0 V
Bottom 4.5 V
101
4.5 V
101

20 µs Pulse Width 20 µs Pulse Width

TC = 25 °C VDS = 50 V

10-1 100 101 4 56 789 10

91021_01 VDS, Drain-to-Source Voltage (V) 91021_03 VGS, Gate-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics

RDS(on), Drain-to-Source On Resistance

VGS 3.0
102 ID = 17 A
Top 15 V VGS = 10 V
10 V 2.5
8.0 V
ID, Drain Current (A)

7.0 V
6.0 V 2.0
(Normalized)

5.5 V
5.0 V
101 Bottom 4.5 V 4.5 V 1.5

1.0

0.5
20 µs Pulse Width
TC = 175 °C
0.0
10-1 100 101 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160180
91021_02 VDS, Drain-to-Source Voltage (V) 91021_04 TJ, Junction Temperature (°C)

Fig. 2 - Typical Output Characteristics, TC = 175 °C Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91021 www .vishay.com

S11-0510-Rev. B, 21-Mar-11 3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF540, SiHF540
Vishay Siliconix

3000
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted 150 °C

ISD, Reverse Drain Current (A)

2400 Crss = Cgd
Coss = Cds + Cgd
Capacitance (pF)

101 25 °C
Ciss
1800

1200
Coss 100

600
Crss
VGS = 0 V
0 10-1
100 101 0.4 0.8 1.2 1.6

91021_05 VDS, Drain-to-Source Voltage (V) 91021_07 VSD, Source-to-Drain Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage

20 103
ID = 17 A Operation in this area limited
VGS, Gate-to-Source Voltage (V)

5 by RDS(on)
VDS = 80 V
16 2
VDS = 50 V
ID, Drain Current (A)

102 10 µs
VDS = 20 V
12 5
100 µs
2
8 1 ms
10

4 5 10 ms
TC = 25 °C
For test circuit
2 TJ = 175 °C
see figure 13 Single Pulse
0 1
2 5 25 25 25 25
0 10 20 30 40 50 60 70 0.1 1 10 102 103 104

91021_06 QG, Total Gate Charge (nC) 91021_08 VDS, Drain-to-Source Voltage (V)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area

www.vishay.com Document Number: 91021

4 S11-0510-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF540, SiHF540
Vishay Siliconix

RD
VDS

VGS
D.U.T.
30 RG
+
- VDD
25
10 V
ID, Drain Current (A)

20 Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

15
Fig. 10a - Switching Time Test Circuit

10

VDS
5
90 %

0
25 50 75 100 125 150 175

91021_09 TC, Case Temperature (°C)

10 %
VGS
td(on) tr td(off) tf

Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms

10
Thermal Response (ZthJC)

1
0 − 0.5
PDM
0.2
0.1 0.1 t1
0.05 t2
0.02 Single Pulse Notes:
0.01 (Thermal Response) 1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5 10-4 10-3 10-2 0.1 1 10

91021_11 t1, Rectangular Pulse Duration (s)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91021 www .vishay.com

S11-0510-Rev. B, 21-Mar-11 5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF540, SiHF540
Vishay Siliconix

L VDS
VDS
Vary t p to obtain tp
required IAS VDD
RG D.U.T +
V DD
- VDS
IAS
10 V
tp 0.01 Ω
IAS

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

600
ID
Top
EAS, Single Pulse Energy (mJ)

11 A
500 20 A
Bottom 28 A
400

300

200

100

VDD = 25 V
0
25 50 75 100 125 150 175

91021_12c Starting TJ, Junction Temperature (°C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator
Same type as D.U.T.

QG 50 kΩ
10 V 12 V 0.2 µF
0.3 µF

QGS QGD +
VDS
D.U.T. -

VG
VGS

3 mA

Charge
IG ID
Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

www.vishay.com Document Number: 91021

6 S11-0510-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF540, SiHF540
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+ Circuit layout considerations

D.U.T.
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-

- +
-

Rg • dV/dt controlled by Rg +
• Driver same type as D.U.T. VDD
-
• ISD controlled by duty factor “D”
• D.U.T. - device under test

Driver gate drive

Period P.W.
D=
P.W. Period

VGS = 10 Va

D.U.T. lSD waveform

Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD

Re-applied
voltage
Body diode forward drop
Inductor current

Ripple ≤ 5 % ISD

Note
a. VGS = 5 V for logic level devices

Fig. 14 - For N-Channel

Vishay S iliconix maintains worldw ide manufacturin g capabili ty. Products ma y be m anufactured at on e of several qua lified locatio ns. R eliability data for Silicon
Technology and P ackage Reli ability rep resent a composit e of all qualifi ed locat ions. For r elated do cuments su ch as package/tape drawings, pa rt ma rking, and
reliability data, see http://www.vishay.com/ppg?91021.

Document Number: 91021 www .vishay.com

S11-0510-Rev. B, 21-Mar-11 7
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Package Information
www.vishay.com
Vishay Siliconix
TO-220AB
MILLIMETERS INCHES
A
E DIM. MIN. MAX. MIN. MAX.
F
A 4.25 4.65 0.167 0.183
ØP b 0.69 1.01 0.027 0.040
b(1) 1.20 1.73 0.047 0.068
Q
H(1)

c 0.36 0.61 0.014 0.024

D 14.85 15.49 0.585 0.610
E 10.04 10.51 0.395 0.414
D

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
H(1) 6.09 6.48 0.240 0.255
1 2 3 J(1) 2.41 2.92 0.095 0.115
L 13.35 14.02 0.526 0.552
L(1)

L(1) 3.32 3.82 0.131 0.150

M* ØP 3.54 3.94 0.139 0.155
Q 2.60 3.00 0.102 0.118
b(1) ECN: T13-0724-Rev. O, 14-Oct-13
L

DWG: 5471
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM

C
b
e
J(1)
e(1)

Revison: 14-Oct-13 1 Document Number: 71195

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Intertech nology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill th e
definitions and rest rictions defi ned under Directive 2011/65/EU of Th e European Parliam ent and of the Cou ncil
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12 1 Document Number: 91000