Power Electronics 1: Two Main Terminal and A Gate Terminal

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Power Electronics 1
Q1. A Triac has three terminals viz ………………
1. Drain, source, gate

2. Two main terminal and a gate terminal
3. Cathode, anode, gate
4. None of the above
Q2. A triac is equivalent to two SCRs …………..
1. In parallel
2. In series
3. In inverse-parallel
Q3. A triac is a …………. switch
1. Bidirectional
2. Unidirectional
3. Mechanical
Answer : 1
Q4. The V-I characteristics for a triac in the first and
third quadrants are essentially identical to those of ………………. in its
first quadrant
1. Transistor
2. SCR
3. UJT
4. none of the above
Answer : 2
Q5. A triac can pass a portion of …………… half-cycle through the load
1. Only positive
2. Only negative
3. Both positive and negative
Answer : 3
Q6. A diac has ………….. terminals
1. Two
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2. Three
3. Four
Answer : 1
Q7. A triac has …………….. semiconductor layers
1. Two
2. Three
3. Four
4. Five
Answer : 3
Q8. A diac has …………… pn junctions
1. Four
2. Two
3. Three
Answer : 2
Q9. The device that does not have the gate terminal is ……………….
1. Triac
2. FET
3. SCR
4. Diac
Answer : 4
Q10. A diac has ……………… semiconductor layers
1. Three
2. Two
3. Four
Answer : 1
Q11. A UJT has ……………….
1. Two pn junctions
2. One pn junction
3. Three pn junctions
Answer : 2
Q12. The normal way to turn on a diac is by ………………..
1. Gate current
2. Gate voltage
3. Breakover voltage
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Answer : 3
Q13. A diac is …………………. switch
1. Ac
2. A d.c.
3. A mechanical
Answer : 1
Q14. In a UJT, the p-type emitter is ……………. doped
1. Lightly
2. Heavily
3. Moderately
Answer : 2
Q15. Power electronics essentially deals with control of a.c. power at …………
1. Frequencies above 20 kHz

2. Frequencies above 1000 kHz
3. Frequencies less than 10 Hz
4. 50 Hz frequency
Answer : 4
Q16. When the emitter terminal of a UJT is open, the resistance between the base terminal
is generally ………………..
1. High
2. Low
3. Extremely low
Answer : 1
Q17. When a UJT is turned ON, the resistance between emitter terminal and lower base
terminal …………….
1. Remains the same

2. Is decreased
3. Is increased
Answer : 2
Q18. To turn on UJT, the forward bias on the emitter diode should be …………… the peak
point voltage
1. Less than
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2. Equal to
3. More than
Answer : 3
Q19. A UJT is sometimes called …………. diode
1. Low resistance
2. High resistance
3. Single-base
4. Double-base
Answer : 4
Q20. When the temperature increases, the inter-base resistance (RBB) of a UJT ………….
1. Increases
2. Decreases
3. Remains the same
Answer : 1
Q21. This question will be available soon
Q22. When the temperature increases, the intrinsic stand off ratio ……….
1. Increases
2. Decreases
3. Essentially remains the same
Answer : 3
Q23. Between the peak point and the valley point of UJT emitter characteristics we have
………….. region
1. Saturation
2. Negative resistance
3. Cut-off
Answer : 2
Q24. A diac is turned on by …………………
1. A breakover voltage
2. Gate voltage
3. Gate current
Answer : 1
Q25. The device that exhibits negative resistance region is ………………..
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1. Diac
2. Triac
3. Transistor
4. UJT
Answer : 4
Q26. The UJT may be used as ……………….
1. Am amplifier
2. A sawtooth generator
3. A rectifier
Answer : 2
Q27. A diac is simply ………………
1. A single junction device

2. A three junction device
3. A triac without gate terminal
Answer : 3
Q28. After peak point, the UJT operates in the ……………. region
1. Cut-off
2. Saturation
Answer : 3
Q29. Which of the following is not a characteristic of UJT?
1. Intrinsic stand off ratio

3. Peak-point voltage
4. Bilateral conduction
5.
6. Q30. The triac is …………….
7. Like a bidirectional SCR
8. A four-terminal device
9. Not a thyristor
10. Answers (1) and (2)
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Power Electronics 2
1) Unipolar modulation is generally used in

a. AC – AC converters
b. AC– DC converters
c. DC– AC converters
d. DC– DC converters
ANSWER: DC – DC converter
2) The quadrant operation of BJT is represented by
a. 1
b. 2
c. 3
d. 4
ANSWER: 2
3) The switching function of semiconductor devices can be characterized with

a. Duty ratio only
b. Frequency only
c. Duty ratio and frequency
d. Duty ratio, frequency and time delay
ANSWER: Duty ratio, frequency and time delay
4) AC power in a load can be controlled by using

a. two SCR’s in parallel opposition
b. two SCR’s in series
c. three SCR’s in series
d. four SCR’s in series
ANSWER: two SCR’s in parallel opposition
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5) An SCR is made up of silicon because

a. silicon has large leakage current than germanium
b. silicon has small leakage current than germanium
c. silicon has small leakage voltage than germanium
d. silicon has large leakage voltage than germanium
ANSWER: silicon has small leakage current than germanium
6) The output power of the cascaded amplifier / attenuator system can be determined
using
a. Actual gain of amplifier
b. Actual gain of amplifier and attenuator
c. Gain in dB of amplifier and attenuator
d. Actual gain of attenuator
ANSWER: Actual gain of amplifier and attenuator
7) LISN is a device used to measure conducted emissions. LISN stands for

a. Line integrated stabilization network
b. Line impedance stabilization network
c. Line integrated stored network
d. Laser integrated stabilization networking
ANSWER: Line impedance stabilization network
8) In current commutated DC-DC choppers, the voltage spike appears across the load when
a. Voltage across the commutating inductances collapses
b. The capacitance voltage adds to the supply voltage
c. Both (a) and (b)
d. None of these
ANSWER: Both (a) and (b)
9) In a load commutated DC – DC chopper, the capacitor has a

a. Symmetric triangular voltage across itself
b. Symmetric rectangular voltage across itself
c. Symmetric trapezoidal voltage across itself
d. Symmetric sinusoidal voltage across itself
ANSWER: Symmetric trapezoidal voltage across itself
10) Voltage commutation circuit can be converted into a current commutation by

interchanging the positions of
a. Diode and capacitor
b. Capacitor and SCR
c. Inductor and capacitor
d. Capacitor and load
ANSWER: Diode and capacitor
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11) For swept frequency measurements, the input impedance of the mismatched
transmission line would vary with frequency as the electrical length of the transmission line
would
a. Decrease with frequency
b. Remains same with change in frequency
c. Increase with frequency
d. Either (a) or (b)
ANSWER: Increase with frequency
12) In EMC signal, the source delivers maximum power to the input of transmission line
when the transmission line input impedance
a. Is equal to the source resistance
b. Greater than the source resistance
c. Smaller than the source resistance
d. None of these
ANSWER: Is equal to the source resistance
13) In radiative coupling, the emitter radiation field

a. Decays as 1 / R, where R is the separation distance between the emitter and the receptor
b. Decays as R, where R is the separation distance between the emitter and the receptor
c. Decays as 1 / 2 R, where R is the separation distance between the emitter and the receptor
d. Decays as 2R, where R is the separation distance between the emitter and the receptor
ANSWER: Decays as 1 / R, where R is the separation distance between the emitter and the
receptor
14) The effects of EMI can be reduced by

a. Suppressing emissions
b. Reducing the efficiency of the coupling path
c. Reducing the susceptibility of the receptor
d. All of these
ANSWER: All of these
15) Between the incoming and outgoing devices in voltage commutation

a. Large overlapping takes place
b. Small overlapping operation
c. No overlapping operation
d. None of these
ANSWER: No overlapping operation
16) During the commutation period in 3 phase converter, overlap time is

a. Dependent on the load current
b. Dependent
on the voltage
c. Dependent on both the load current and load voltage behind the short circuit current
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d. Independent
on both the load current and load voltage
ANSWER: Dependent on both the load current
and load voltage behind the short circuit current
17) In a three phase converter, the number of notches per cycle is

a. One
b. Three
c. Six
d. Nine
ANSWER: Six
18) In a 3 phase CSI, if the required line output voltages are balanced and 120
degree out of phase, then the chopping angles are used to eliminate only the
harmonics at frequencies
a. 5
b. 7
c. 11
d. All of these
19) For similar carrier and modulating signals, the line current used in CSI is
a.Identical to line voltage in a VSI
b. Identical to line current in VSI
c. Identical to phase voltage in VSI
d. Identical to phase voltage in CSI
ANSWER: Identical to line voltage in a VSI
20) Under harmonic free load voltages, the 3 phase VSI

a. Does not contains second harmonic
b. Does
not contains third harmonic
c. Does
not contains fifth harmonic
d. Does
not contains seventh harmonic
ANSWER: Does not contains second harmonic
21) The square wave operation of 3 phase VSI lines contains the harmonics. The
amplitudes are
a. Directly proportional to their harmonic order
b. Inversely proportional to their harmonic order
c. Not
related to their harmonic order
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d. None
of these
ANSWER: Inversely proportional to their
harmonic order
22) In bipolar modulation, the carrier is symmetric about zero with amplitude equal to Cm,
the PWM output
a. Zero
b. Switches between – 1 / 2 and + 1 / 2
c. Switches
between – 1 and + 1
d. Switches
between 0 and + 1
ANSWER: Switches between – 1 / 2 and + 1 / 2
23) Double fourier series analysis of PWM is

a. Two dimensional functions
b. Three
dimensional functions
c. One
dimensional functions
d. All
of these
ANSWER: Two dimensional functions
24) In single phase VSI, the harmonic which is not present is

a. 2nd
b. 3rd
c. 5th
d. 7th
ANSWER: 2nd
25) Very large values of modulation index (greater than 3.24) lead to
a. Square AC output voltage
b. Sine
AC output voltage
c. Triangular
AC output voltage
d. Trapezoidal
AC output voltage
ANSWER: Square AC output voltage
26) Single phase VSI are mainly used in

a. Power supplies
b. Ups
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c. Multilevel configuration
d. All of these
27) For bidirectional operation of converters

a. A parallel combination of controllable switch and a diode is used
b. A
parallel combination of controllable switch and capacitor is used
c. A
series combination of controllable switch and a diode is used
d. A
series combination of controllable switch and a capacitor is used
ANSWER: A parallel combination of
controllable switch and a diode is used
28) For a buck converter to reduce the conduction losses in diode

a. A high on – resistance switch can be added in parallel
b. A low on – resistance switch can be added in parallel
c. A
high on – resistance switch can be added in series
d. A
low on – resistance switch can be added in series
ANSWER: A low on – resistance switch can be
added in parallel
29) The conduction losses in IGBT is

a. More than that of MOSFET
b. Lower than that of MOSFET
c. Equal
to that of MOSFET
d. Equal
to that of BJT
ANSWER: Lower than that of MOSFET
30) The power MOSFET device is a

a. Current controlled unipolar device
b. Voltage controlled unipolar device
c. Current
controlled bipolar device
d. Voltage
controlled bipolar device
ANSWER: Voltage controlled unipolar device
31) With increase in firing angle,
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a. Both harmonic distortion and quality of input current

increases
b. Harmonic distortion increases and quality of input current decreases
c. Harmonic
distortion decreases and quality of input current increases
d. Both
harmonic distortion and quality of input current decreases
ANSWER: Harmonic distortion increases and
quality of input current decreases
32) The most suited gate pulses given to the AC regulator with R – L load can be in
the form of
a. Continuous signal
b. Large
isolating pulse transformer
c. A train of pulses
d. None
of these
ANSWER: A train of pulses
34) Harmonics in 3 phase inverters can be reduced by using

a. Passive filter
b. Active
filter
c. Both passive and active filters
d. None
of these
ANSWER: Both passive and active filters
35) The advantage of using free – wheeling diode in half controlled bridge converter is that
a. There is always a path for the dc current independent of the ac line
b. There
is always a path for the ac current independent of the ac line
c. There
is always a path for the dc current dependent of the ac line
d. There
is always a path for the ac current independent of the ac line
ANSWER: There is always a path for the dc
current independent of the ac line
36) The input current waveform of a bridge controlled rectifier when the load is perfectly
filtered is
a. Sine wave
b. Square wave
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c. Saw
– tooth wave
d. Trapezoidal
wave
ANSWER: Square wave
37) A full wave rectifier with resistive load produces

a. Second harmonic
b. Third
harmonic
c. Fifth
harmonic
d. Do not produce harmonics
ANSWER: Do not produce harmonics
38) A crowbar is a circuit which is used to protect a

a. voltage sensitive load from excessive dc power supply output voltages
b. current
sensitive load from excessive dc power supply output voltages
c. voltage
sensitive load from excessive ac power supply output voltages
d. current
sensitive load from excessive ac power supply output voltages
ANSWER: voltage sensitive load from
excessive dc power supply output voltages
39) An SCR can be used

a. as static conductor
b. for power control
c. for speed control of dc shunt motor
d. all of these
ANSWER: all of these
40) TRIAC is a semiconductor power electronic device which contains

a. Two SCR’s connected in reverse parallel
b. Two SCR’s connected in parallel
c. Two SCR’s connected in series
d. Two BJT’s connected in series
ANSWER: Two SCR’s connected in reverse parallel
41) Silicon controlled rectifier can be turned on

a. By applying a gate pulse and turned off only when current becomes zero
b. And
turned off by applying gate pulse
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c. By
applying a gate pulse and turned off by removing the gate pulse
d. By
making current non zero and turned off by making current zero
ANSWER: By applying a gate pulse and
turned off only when current becomes zero
42) In a square – wave operation of 3 phase CSIs, the power values are on for
a. 60 degree
b. 90
degree
c. 120 degree
d. 150
degree
ANSWER: 120 degree
43) A carrier based PWM technique in CSI is composed of

a. A switching pulse generator and a shorting pulse generator
b. A shorting pulse distributor
c. A switching and shorting pulse combination
d. All of these
44) In variable frequency, PWM gain

a. Phase lead helps to increase the phase margin of the control loop
b. Phase
lag helps to increase the phase margin of the control loop
c. Phase
lead helps to decrease the phase margin of the control loop
d. Phase
lag helps to decrease the phase margin of the control loop
ANSWER: Phase lead helps to increase the
phase margin of the control loop
45) In constant frequency PWM, at perturbation the amplitude of the sinusoidal

component is
a
a. Linear function
b. Non
linear function
c. Constant
function
d. None of these
ANSWER: None of these
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46) The transfer function of PWM is generally developed in

a. Time domain
b. Frequency domain
c. Either (a) or (b)
d. None
of these
ANSWER: Either (a) or (b)
47) In the SPWM, the modulating signal is

a. Square
b. Sinusoidal
c. Triangular
d. Saw– tooth
ANSWER: Sinusoidal
48) In a full bridge VSI, in order to avoid the short circuit across the DC bus and the
undefined AC output voltage condition, the modulating technique should ensure that
a. Top switch of each leg is on at any instant
b. Bottom switch of each leg is on at any instant
d. None
of these
49) In a lossless inverter, the average power absorbed in one period by the load must be
a. Equal to the average power supplied by the dc source
b. Greater
than the average power supplied by the dc source
c. Lesser
than the average power supplied by the dc source
d. Equal
to the average power supplied by the ac source
ANSWER: Equal to the average power supplied by the dc source
50) A step – down choppers can be used in

a. Electric traction
b. Electric vehicles
c. Machine tools
d. All of these
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power_25.html
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Power Electronics 3
1) The output current in PWM DC – DC converters is equal to

a. Average value of the output inductor current
b. Product of an average inductor current and a function of duty ratio
d. None of these
2) The opposite of susceptibility is
a. Immunity
b. Emission
c. Interference
d. Electromagnetic compatibility
ANSWER: Immunity
3) The ability of an electronic system to function properly in its intended electromagnetic

environment
and should not be a source of pollution to that electromagnetic environment is known as
a. Susceptibility
b. Emission
c. Interference
d. Electromagnetic compatibility
ANSWER: Electromagnetic compatibility
4) If all the SCR’s of 3 phase PAC is replaced by diodes, they would be triggered
a. 120 degree after the zero crossing of the corresponding line voltages
b. 60 degree after the zero crossing of the corresponding line voltages
c. 120 degree before the zero crossing of the corresponding line voltages
d. 60 degree before the zero crossing of the corresponding line voltages
ANSWER: 60 degree after the zero crossing of the corresponding line voltages
5) For commutation in three phase PAC, normally balanced three phase voltages VR,
VY and VB are connected to the three legs of the converter via
a. Three inductances
b. Three capacitances
c. Three resistance
d. Three transistors
ANSWER: Three inductances
6) In square wave operation mode of 3 phase VSI, the VSI
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a. Can control the load voltage

b. Cannot control the load voltage
c. Cannot control the load voltage except by means of dc link voltage
d. Cannot control the load voltage except by means of dc link current
ANSWER: Cannot control the load voltage except by means of dc link voltage
7) In a 3 phase VSI SPWM to use a single carrier signal and preserve the features of PWM
technique, the normalized carrier frequency should be
a. Multiple of two
b. Odd multiple of three
c. Odd multiple of five
d. Odd multiple of seven
ANSWER: Odd multiple of three
8) Regulator sampling PWM is usually used in

a. High power inverters
b. Rectifiers
c. Low power inverters
d. Only (a) and (b)
ANSWER: Only (a) and (b)
9) A combination of synchronized leading edge and trailing edge modulation has also been
used to control a
a. Boost single – phase power factor converter

b. A buck dc – dc converter to reduce ripple in the intermediate dc bus capacitor
c. Both (a) and (b)
d. None f these
10) If energy is taken from the AC side of the inverter and sends it back into the DC side,
then it is known as
a. Motoring mode operation

b. Braking mode operation
c. Regenerative mode operation
d. None of these
ANSWER: Regenerative mode operation
11) The ac output voltage waveform of VSI and AC output current waveform of CSI
respectively is composed of
a. High dv / dt, low di / dt

b. Low dv / dt, low di / dt
c. Low dv / dt, high di / dt
d. High dv / dt, high di / dt
ANSWER: High dv / dt, high di / dt
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12) Advantages of Cuk converter is / are
a. Large number of reactive component

b. Low stress on switch
c. Low stress on capacitor
d. None of these
ANSWER: None of these
13) In a flyback converter, the inductor of the buck-boost converter has been replaced by a
a. Flyback capacitor
b. Flyback resistor
c. Flyback transformer
d. Flyback transistor
ANSWER: Flyback transformer
14) In a push – pull converter, the filter capacitor can be obtained as
a. Cmin = V / ( Vr L f2 )
b. Cmin= ( 1 – D ) V / ( Vr L f2 )
c. Cmin= ( 1 – 2 D ) V / 32 ( Vr L f2 )
d. Cmin= ( 1 – 2 D ) V / 42 ( Vr L f2 )
ANSWER: Cmin= ( 1 – 2 D ) V / 32 ( Vr L f2 )
15) MOSFET stands for
a. Metal – oxide semiconductor field effect transistor

b. Molybdenum – oxide semiconductor field effect transistor
c. Metal – oxide silicon field effect transistor
d. Metal – oxide semiconductor field effect transmitter
ANSWER: Metal – oxide semiconductor field effect transistor
16) A MOSFET, for its conduction uses
a. Only minority carriers

b. Only majority carriers
c. Both minority and majority carriers
d. None of these
ANSWER: Only majority carriers
17) An RC snubber network used in BJT
a. Divert the collector current during turn – off

b. Improves the reverse bias safe operating area
c. Dissipates a fair amount of switching power
d. All of these
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18) The ac voltage controller can be used for

a. Lighting and heating control
b. On – line transformer tap changing
c. Soft starting
d. All of these
19) The phase angle of gate signal in TRIAC can be shifted by using
a. A capacitor
b. A variable resistor
c. An inductor
d. Only (a) and (b)
20) A TRIAC can be turned on with
a. Positive voltage at the gate terminal

b. Negative voltage at the gate terminal
d. None of these
21) DIAC and TRIAC both are semiconductors devices and conduct in
a. DIAC conducts in forward direction and TRIAC conducts in reverse direction

b. Both conducts in forward direction
c. Both conducts in reverse direction
d. Both conducts in either direction
ANSWER: Both conducts in either direction
22) The Graetz bridge makes excellent use of
a. Current transformer
b. Potential transformer
c. Power transformer
d. SCR
ANSWER: Power transformer
23) If the firing angle becomes negative, then the rectifier begins to work as
a. A rectifier
b. An inverter
c. A chopper
d. A regulator
ANSWER: An inverter
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24) In a 3 phase half wave rectifier, when firing angle is less than 90 degree, then the
average dc output voltage becomes
a. Positive
b. Negative
c. Zero
d. None of these
ANSWER: Positive
25) Transformer utilization factor is a measure of the merit of a rectifier circuit. It is the
ratio of
a. AC input power to the transformer volt – amp rating required by secondary

b. AC input power to the transformer volt – amp rating required by primary
c. DC output power to the transformer volt – amp rating required by secondary
d. DC output power to the transformer volt – amp rating required by primary
ANSWER: DC output power to the transformer volt – amp rating required by secondary
26) Ripple factor is the ratio of
a. Rms value of the ac component of load voltage to the dc voltage

b. Average value of the ac component of load voltage to the peak value of voltage
c. Average value of the dc component of load voltage to the ac voltage
d. Peak value of the dc component of load voltage to the ac voltage
ANSWER: Rms value of the ac component of load voltage to the dc voltage
27) Form factor of a rectifier is the ratio of
a. Root mean square value of voltage and current to its peak value
b. Root mean square value of voltage and current to its average value
c. Average value of current and voltage to its root mean square value
d. Peak value of current and voltage to its root mean square value
ANSWER: Root mean square value of voltage and current to its average value
`
28) The curve between V and I of SCR when anode is positive w.r.t cathode and
when anode is negative w.r.t cathode are known as
a. both as forward characteristics
b. both as reverse characteristics
c. former as forward characteristics and later as reverse characteristics
d. former as reverse characteristics and later as forward characteristics
ANSWER: former as forward characteristics and later as reverse characteristics
29) With gate open, the maximum anode current at which SCR is turned off from ON
condition is called
a. breakdown voltage
b. peak reverse voltage
c. holding current
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d. latching current
ANSWER: holding current
30) Bidirectional semiconductor device is
a. Diode
b. BJT
c. SCR
d. TRIAC
ANSWER: TRIAC
31) An ideal diode is
a. Unidirectional
b. Bidirectional
c. Fixed voltage polarity
d. Only (a) and (c)
ANSWER: Only (a) and (c)
32) The IGBT resulted in higher switching speed and lower energy losses. It can be used for
a. Uninterruptible power supplies

b. Induction heating system
c. Constant voltage and frequency power supplies
d. All of these
33) To detect an over – current fault condition, the most reliable method is to connect a
a. Current sensor across IGBT

b. Voltage sensor across IGBT
c. Current sensor in series with IGBT
d. Voltage sensor in series with IGBT
ANSWER: Current sensor in series with IGBT
34) The on – state voltage drop of IGBT consists of
a. Drop across the collector junction

b. Drop across the drift region
c. Drop across MOSFET portion
d. All of these
35) The maximum firing angle in the half wave controlled regulator is
a. 180 degree
b. 190 degree
c. 200 degree
d. 210 degree
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ANSWER: 210 degree
36) In a phase controlled 3 phase ac voltage controller, the harmonic present is
a. 2nd
b. 3rd
c. 5th
d. 7th
ANSWER: 2nd
37) In dual converters,
a. Both rectifiers provides positive current to the load

b. Both rectifiers provide negative current to the load
c. One rectifiers provide positive current to the load and the other negative current
d. One rectifier provide positive current to the source and the other negative current to the load
ANSWER: Both rectifiers provides positive current to the load
38) Advantages of HVDC transmission over AC system is / are

a. Reversal of power can be controlled by firing angle
b. Very good dynamic behavior
c. They can link two AC system operating un synchronized
d. All of these
39) In rectifiers, load current flow is
a. Unidirectional
b. Bidirectional
d. Non directional
ANSWER: Unidirectional
40) Due to non sinusoidal waveform of the input current, the power factor of the rectifier
is
a. Negatively affected by firing angle

b. Negatively affected by distortion of the input current
c. Positively affected by both firing angle and distortion of the input current
d. Both (a) and (b)
41) The man made noise sources is / are
a. Motors
b. Switches, radio interferences
c. Computers, digital electronics
d. All of these
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42) Any electrical signal present in a circuit other than the desired signal is known as
a. Noise
b. Distortion
c. Interference
d. All of these
ANSWER: Noise
43) In commutation PAC stands for
a. Permanent angle converter

b. Phase angle converter
c. Phase angle commutation
d. Phase and commutation
ANSWER: Phase angle converter
44) In the operation and control of both naturally commutated and forced commutated
SCR base converter,
commutation plays an important role. The converters is / are
a. AC – DC
b. DC – DC
c. DC – AC
d. All of these
45) In a 3 phase VSI out of eight valid states, the number of valid states that produce zero
ac line voltages is/are
a. One
b. two
c. Three
d. Four
ANSWER: two
46) In a three phase voltage source inverters
a. Only amplitude of voltage is controllable

b. Only phase is controllable
c. Both amplitude and phase is controllable
d. Amplitude, phase and frequency of voltages should always be controllable
ANSWER: Amplitude, phase and frequency of voltages should always be controllable
47) Double edge modulation eliminates certain harmonics when the reference is a
a. Sine wave
b. Square wave
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c. Triangular wave
d. Trapezoidal wave
ANSWER: Sine wave
48) The carrier which are commonly used in constant – frequency PWM is
a. Sawtooth carrier
b. Inverted sawtooth carrier
c. Triangle carrier
d. All of these
49) A capacitive load in voltage source inverters generates
a. Small current spikes and can be reduced by using an inductive filter

b. Large current spikes and can be increased by using an inductive filter
c. Small current spikes and can be increased by using an inductive filter
d. Large current spikes and can be reduced by using an inductive filter
ANSWER: Large current spikes and can be reduced by using an inductive filter
50) The main objective of static power converters is to
a. Obtain an dc output waveform from a dc power supply

b. Obtain an ac output waveform from a dc power supply
c. Obtain an dc output waveform from a dc power supply
d. Obtain an ac output waveform from a ac power supply
ANSWER: Obtain an ac output waveform from a dc power supply
51) The control method used for PWM dc – dc converter is
a. Voltage mode control

b. Current mode control
c. Hysteric control
d. All of these
52) The average value of the output voltage in a step – down dc chopper is given by
a. V 0 = V s
b. V 0 = D V s
c. V 0 = V s / D
d. V 0 = V s / ( 1 – D )
ANSWER: V 0 = D V s
53) Choppers is a
a. AC – DC converters
b. AC – AC converters
c. DC – AC converters
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d. DC – DC converters
ANSWER: DC – DC converters
54) In BJT, switching losses occurs
a. Only at turn – on
b. Only at turn – off
c. Both at turn on and off
d. None of these
ANSWER: Both at turn on and off
55) In BJT, the forward biased base emitter junction inject holes from base to emitter, the
holes
a. Do not contribute to the collector current

b. Result in net current flow component into the base
c. Contribute to the collector current
d. Only (a) and (b)
e. Only (b) and (c)
56) As the breakdown voltage reached, the DIAC exhibits
a. Negative resistance characteristics

b. Goes into avalanche condition
c. Voltage drop snaps back
d. All of these
57) DIAC are specifically designed to trigger
a. TRIAC
b. SCR
c. GTO
d. Only (a) and (b)
58) In a 3 phase bridge rectifier the ripple frequency is

a. Equal to the input frequency
b. Twice the input frequency
c. Three times the input frequency
d. Six times the input frequency
ANSWER: Six times the input frequency
59) The sum of all phase current in a star connected primary winding with no neutral
connection is equal to
a. Phase current
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b. Three times the phase current

c. Three times the line current
d. Zero at all times
ANSWER: Zero at all times
60) For power output higher than 15 kW, the suitable rectifier is
a. Single phase
b. 3 phase
c. Poly phase
d. Only (b) and (c)
ANSWER: Only (b) and (c)
61) In a full wave rectifier, the rectification ratio is approximately equal to
a. 61%
b. 71%
c. 81%
d. 91%
ANSWER: 81%
62) In a single phase full wave rectifier, during blocking state the pea inverse voltage of
diode is
a. V m
b. 2 V m
c. V m / 2
d. 4 V m
ANSWER: 2 V m
63) A single phase ac – dc converter is also known as
a. rectifier
b. inverter
c. chopper
d. regulator
ANSWER: rectifier
64) If the gate voltage of an SCR is removed, then the
a. anode current decreases

b. anode current does not decrease at all
c. anode current increases
d. cathode current increases
ANSWER: anode current does not decrease at all
65) Anode of an operational SCR is
a. Always positive w.r.t cathode
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b. Always negative w.r.t anode

c. Always positive w.r.t anode
d. Always negative w.r.t cathode
ANSWER: Always positive w.r.t cathode
66) In a silicon controlled rectifier, the load is connected
a. Across anode
b. In series with anode
c. Across cathode
d. In series with cathode
ANSWER: In series with anode
67) Number of PN junction in an SCR is
a. Two
b. Three
c. Four
d. Five
ANSWER: Three
68) IGBT stands for

a. Insulated gate bipolar transistor
b. Insulated gate bidirectional transistor
c. Inductive gate bipolar transistor
d. Inductive gate bidirectional transistor
ANSWER: Insulated gate bipolar transistor
69) An ideal switch is
a. Lossless
b. Carry current in any direction when it is on
c. Does not carry any current in any direction when it is off
d. All of these
70) In ac – dc conversion, when the switch is closed then the sum of voltages around the
loop is
a. Zero
b. Non zero
c. Equal to the sum of voltage when switch is open
d. Twice of the voltage when switch is open
ANSWER: Non zero
71) A rectifier with an external low pass filter is an example of
a. Indirect switch matrix circuits
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b. Direct switch matrix circuits

c. Embedded converters
d. All of these
ANSWER: Direct switch matrix circuits
Original URL:http://www.allexamreview.com/2017/01/ee-and-ece-important-mcq-power_3.html
Written By Maxthon
13
12/2/2021
Semiconductor Diode 1
Q1. A crystal diode has ………
1. one pn junction
2. two pn junctions
3. three pn junctions
Answer : 1
Q2. A crystal diode has forward resistance of the order of ……………
1. kΩ
2. Ω
3. MΩ
Answer : 2
Q3. If the arrow of crystal diode symbol is positive w.r.t. bar, then diode is ………….. biased.
1. forward
2. reverse
3. either forward or reverse
Answer : 1
Q4. The reverse current in a diode is of the order of ……………….
1. kA
2. mA
3. μA
4. A
Answer : 3
Q5. The forward voltage drop across a silicon diode is about …………………
1. 2.5 V
2. 3 V
3. 10 V
4. 0.7 V
Answer : 4
Q6. A crystal diode is used as ……………
1. an amplifier
2. a rectifier
3. an oscillator
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4. a voltage regulator
Answer : 2
Q7. The d.c. resistance of a crystal diode is ………….. its a.c. resistance
1. the same as
2. more than
3. less than
Answer : 3
Q8. An ideal crystal diode is one which behaves as a perfect ……….. when forward biased.
1. conductor
2. insulator
3. resistance material
Answer : 1
Q9. The ratio of reverse resistance and forward resistance of a germanium crystal diode is
about ………….
1. 1 : 1
2. 100 : 1
3. 1000 : 1
4. 40,000 : 1
Answer : 4
Q 10. The leakage current in a crystal diode is due to …………….
1. minority carriers
2. majority carriers
3. junction capacitance
Answer :1
Q11. If the temperature of a crystal diode increases, then leakage current ………..
1. remains the same

2. decreases
3. increases
4. becomes zero
Answer :3
Q12. The PIV rating of a crystal diode is ………….. that of equivalent vacuum diode
1. the same as
2. lower than
3. more than
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Answer :2
Q13. If the doping level of a crystal diode is increased, the breakdown voltage………….
1. remains the same

2. is increased
3. is decreased
Answer :3
Q14. The knee voltage of a crystal diode is approximately equal to ………….
1. applied voltage
2. breakdown voltage
3. forward voltage
4. barrier potential
Answer :4
Q15. When the graph between current through and voltage across a device is a straight line,
the device is referred to as ……………….
1. linear
2. active
3. nonlinear
4. passive
Answer :1
Q16. When the crystal current diode current is large, the bias is …………
1. forward
2. inverse
3. poor
4. reverse
Answer :1
Q17. A crystal diode is a …………… device
1. non-linear
2. bilateral
3. linear
Answer :1
Q18. A crystal diode utilises …………….. characteristic for rectification
1. reverse
2. forward
3. forward or reverse
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Answer :2
Q19. When a crystal diode is used as a rectifier, the most important consideration is ………..
1. forward characteristic
2. doping level
3. reverse characteristic
4. PIC rating
Answer :4
Q20. If the doping level in a crystal diode is increased, the width of depletion layer………..
1. remains the same

2. is decreased
3. in increased
Answer :3
Q21. A zener diode has ………..
1. one pn junction
2. two pn junctions
Answer :1
Q22. A zener diode is used as …………….
1. an amplifier
2. a voltage regulator
3. a rectifier
4. a multivibrator
Answer :2
Q23. The doping level in a zener diode is …………… that of a crystal diode
1. the same as
2. less than
3. more than
Answer :3
Q24. A zener diode is always ………… connected.
1. reverse
2. forward
3. either reverse or forward
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Answer :1
Q25. A zener diode utilizes ……….. characteristics for its operation.
1. forward
2. reverse
3. both forward and reverse
Answer :2
Q26. In the breakdown region, a zener didoe behaves like a …………… source.
1. constant voltage
2. constant current
3. constant resistance
Answer :1
27. A zener diode is destroyed if it…………..
1. is forward biased
2. is reverse biased
3. carrier more than rated current
Answer :3
Q28. A series resistance is connected in the zener circuit to………..
1. properly reverse bias the zener

2. protect the zener
3. properly forward bias the zener
Answer :2
A29. A zener diode is …………………. device
1. a non-linear
2. a linear
3. an amplifying
Answer :1
Q30. A zener diode has ………….. breakdown voltage
1. undefined
2. sharp
3. zero
Answer :2
Q31. ……………. rectifier has the lowest forward resistance
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1. solid state
2. vacuum tube
3. gas tube
Answer :1
Q32. Mains a.c. power is converrted into d.c. power for ……………..
1. lighting purposes
2. heaters
3. using in electronic equipment
Answer :3
Q33. The disadvantage of a half-wave rectifier is that the……………….
1. components are expensive

2. diodes must have a higher power rating
3. output is difficult to filter
Answer :3
Q34. If the a.c. input to a half-wave rectifier is an r.m.s value of 400/√2 volts, then diode PIV
rating is ………………….
1. 400/√2 V
2. 400 V
3. 400 x √2 V
Answer :2
Q35. The ripple factor of a half-wave rectifier is …………………
1. 2
2. 1.21
3. 2.5
4. 0.48
Answer :4
Q36. There is a need of transformer for ………………..
1. half-wave rectifier
2. centre-tap full-wave rectifier
3. bridge full-wave rectifier
Answer :2
Q37. The PIV rating of each diode in a bridge rectifier is ……………… that of the equivalent
centre-tap rectifier
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1. one-half
2. the same as
3. twice
4. four times
Answer :1
Q38. For the same secondary voltage, the output voltage from a centre-tap rectifier is
………… than that of bridge rectifier
1. twice
2. thrice
3. four time
4. one-half
Answer :4
Q39. If the PIV rating of a diode is exceeded, ………………
1. the diode conducts poorly

2. the diode is destroyed
3. the diode behaves like a zener diode
Answer :2
Q40. A 10 V power supply would use …………………. as filter capacitor.
1. paper capacitor
2. mica capacitor
3. electrolytic capacitor
4. air capacitor
Answer :3
Q41. A 1,000 V power supply would use ……….. as a filter capacitor
1. paper capacitor
2. air capacitor
3. mica capacitor
4. electrolytic capacitor
Answer :1
Q42. The ……………….. filter circuit results in the best voltage regulation
1. choke input
2. capacitor input
3. resistance input
Answer :1
Q43. A half-wave rectifier has an input voltage of 240 V
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r.m.s. If the step-down transformer has a turns ratio of 8:1, what is

the peak load voltage? Ignore diode drop.
1. 27.5 V
2. 86.5 V
3. 30 V
4. 42.5 V
Answer :4
Q44. The maximum efficiency of a half-wave rectifier is ………………..
1. 40.6 %
2. 81.2 %
3. 50 %
4. 25 %
Answer :1
Q45. The most widely used rectifier is ……………….
1. half-wave rectifier
2. centre-tap full-wave rectifier
3. bridge full-wave rectifier
Answer :3
Original URL:http://www.allexamreview.com/2017/01/ee-and-ece-important-mcq-
semiconductor_22.html
Written By Maxthon
8
12/2/2021
Semiconductor Theory 1
Q1. A semiconductor is formed by ……… bonds.
1. Covalent
2. Electrovalent
3. Co-ordinate
Answer : A
Q2. A semiconductor has ………… temperature coefficient of resistance.
1. Positive
2. Zero
3. Negative
Answer : C
Q3. The most commonly used semiconductor is ………..
1. Germanium
2. Silicon
3. Carbon
4. Sulphur
Answer : B
Q4. A semiconductor has generally ……………… valence electrons.
1. 2
2. 3
3. 6
4. 4
Answer : D
Q5. The resistivity of pure germanium under standard conditions is about ……….
1. 6 x 104 Ω cm
2. 60 Ω cm
3. 3 x 106 Ω cm
4. 6 x 10-4 Ω cm
Answer : B
Q6. The resistivity of a pure silicon is about ……………
1. 100 Ω cm
2. 6000 Ω cm
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3. 3 x 105 Ω m
4. 6 x 10-8 Ω cm
Answer : B
Q7. When a pure semiconductor is heated, its resistance …………..
1. Goes up
2. Goes down
3. Remains the same
4. Can’t say
Answer : B
Q8. The strength of a semiconductor crystal comes from ……..
1. Forces between nuclei

2. Forces between protons
3. Electron-pair bonds
Answer : C
Q9. When a pentavalent impurity is added to a pure semiconductor, it becomes ………
1. An insulator
2. An intrinsic semiconductor
3. p-type semiconductor
4. n-type semiconductor
Answer : D
Q10. Addition of pentavalent impurity to a semiconductor creates many ……..
1. Free electrons
2. Holes
3. Valence electrons
4. Bound electrons
Answer : A
Q11. A pentavalent impurity has ………. Valence electrons
1. 3
2. 5
3. 4
4. 6
Answer : B
A12. An n-type semiconductor is ………
1. Positively charged
2. Negatively charged
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3. Electrically neutral
Answer : C
Q13. A trivalent impurity has ….. valence electrons
1. 4
2. 5
3. 6
4. 3
Answer : D
A14. Addition of trivalent impurity to a semiconductor creates many ……..
1. Holes
2. Free electrons
3. Valence electrons
4. Bound electrons
Answer : A
Q15. A hole in a semiconductor is defined as …………….
1. A free electron
2. The incomplete part of an electron pair bond
3. A free proton
4. A free neutron
Answer : B
Q16. The impurity level in an extrinsic semiconductor is about ….. of pure semiconductor.
1. 10 atoms for 108 atoms

2. 1 atom for 108 atoms
Answer : B
Q17. As the doping to a pure semiconductor increases, the bulk resistance of the
semiconductor ………..
1. Remains the same

2. Increases
3. Decreases
Answer : C
Q18. A hole and electron in close proximity would tend to ……….
1. Repel each other

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2. Attract each other

3. Have no effect on each other
Answer : B
Q19. In a semiconductor, current conduction is due to ……..
1. Only holes
2. Only free electrons
3. Holes and free electrons
Answer : C
Q20. The random motion of holes and free electrons due to thermal agitation is called
……….
1. Diffusion
2. Pressure
3. Ionisation
Answer : A
Q21. A forward biased pn junction diode has a resistance of the order of
1. Ω
2. kΩ
3. MΩ
Answer : A
Q22. The battery connections required to forward bias a pn junction are ……
1. +ve terminal to p and –ve terminal to n

2. -ve terminal to p and +ve terminal to n
3. -ve terminal to p and –ve terminal to n
Answer : A
Q23. The barrier voltage at a pn junction for germanium is about ………
1. 5 V
2. 3 V
3. Zero
4. 3 V
Answer : D
Q24. In the depletion region of a pn junction, there is a shortage of ……..
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1. Acceptor ions
2. Holes and electrons
3. Donor ions
Answer : B
Q25. A reverse bias pn junction has …………
1. Very narrow depletion layer

2. Almost no current
3. Very low resistance
4. Large current flow
Answer : B
Q26. A pn junction acts as a ……….
1. Controlled switch
2. Bidirectional switch
3. Unidirectional switch
Answer : C
Q27. A reverse biased pn junction has resistance of the order of
1. Ω
2. kΩ
3. MΩ
Answer : C
Q28. The leakage current across a pn junction is due to …………..
1. Minority carriers
2. Majority carriers
3. Junction capacitance
Answer : A
Q29. When the temperature of an extrinsic semiconductor is increased, the pronounced

effect is on……
1. Junction capacitance
2. Minority carriers
3. Majority carriers
Answer : B
5
12/2/2021
Q30. With forward bias to a pn junction , the width of depletion layer ………
1. Decreases
2. Increases
3. Remains the same
Answer : A
Q31. The leakage current in a pn junction is of the order of
1. Aa
2. mA
3. kA
4. µA
Answer : D
Q32. In an intrinsic semiconductor, the number of free electrons ………
1. Equals the number of holes

2. Is greater than the number of holes
3. Is less than the number of holes
Answer : A
Q33. At room temperature, an intrinsic semiconductor has ……….
1. Many holes only

2. A few free electrons and holes
3. Many free electrons only
4. No holes or free electrons
Answer : B
Q34. At absolute temperature, an intrinsic semiconductor has ……….
1. A few free electrons

2. Many holes
3. Many free electrons
4. No holes or free electrons
Answer : D
Q35. At room temperature, an intrinsic silicon crystal acts approximately as ……
1. A battery
2. A conductor
3. An insulator
4. A piece of copper wire
Answer : C
6
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Transistors 1
Q1. A transistor has …………………
1. one pn junction
2. two pn junctions
4. four pn junctions
Answer : 2
Q2. The number of depletion layers in a transistor is …………
1. four
2. three
3. one
4. two
Answer : 4
Q3. The base of a transistor is ………….. doped
1. heavily
2. moderately
3. lightly
Answer : 3
Q4. The element that has the biggest size in a transistor is ………………..
1. collector
2. base
3. emitter
4. collector-base-junction
Answer : 1
Q5. In a pnp transistor, the current carriers are ………….
1. acceptor ions
2. donor ions
3. free electrons
4. holes
Answer : 4
Q6. The collector of a transistor is …………. doped
1. heavily
2. moderately
3. lightly
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Answer : 2
Q7. A transistor is a …………… operated device
1. current
2. voltage
3. both voltage and current
Answer : 1
Q8. In a npn transistor, ……………. are the minority carriers
1. free electrons
2. holes
3. donor ions
4. acceptor ions
Answer : 2
Q9. The emitter of a transistor is ………………… doped
1. lightly
2. heavily
3. moderately
Answer : 2
Q10. In a transistor, the base current is about ………….. of emitter current
1. 25%
2. 20%
3. 35 %
4. 5%
Answer : 4
Q11. At the base-emitter junctions of a transistor, one finds ……………
1. a reverse bias
2. a wide depletion layer
3. low resistance
Answer : 3
Q12. The input impedance of a transistor is ………….
1. high
2. low
3. very high
4. almost zero
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12/2/2021
Answer : 2
Q13. Most of the majority carriers from the emitter ………………..
1. recombine in the base

2. recombine in the emitter
3. pass through the base region to the collector
Answer :3
Q14. The current IB is …………
1. electron current
2. hole current
3. donor ion current
4. acceptor ion current
Answer : 1
Q15. In a transistor ………………..
1. IC = IE + IB
2. IB = IC + IE
3. IE = IC – IB
4. IE = IC + IB
Answer : 4
Q16. The value of α of a transistor is ……….
1. more than 1
2. less than 1
3. 1
Answer : 2
Q17. IC = αIE + ………….
1. IB
2. ICEO
3. ICBO
4. βIB
Answer : 3
Q18. The output impedance of a transistor is ……………..
1. high
2. zero
3. low
4. very low
Answer : 1
Q19. In a tansistor, IC = 100 mA and IE = 100.2 mA. The value of β is …………
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12/2/2021
1. 100
2. 50
3. about 1
4. 200
Answer : 4
Q20. In a transistor if β = 100 and collector current is 10 mA, then IE is …………
1. 100 mA
2. 100.1 mA
3. 110 mA
Answer : 2
Q21. The relation between β and α is …………..
1. β = 1 / (1 – α )
2. β = (1 – α ) / α
3. β = α / (1 – α )
4. β = α / (1 + α )
Answer : 3
Q22. The value of β for a transistor is generally ………………..
1. 1
2. less than 1
3. between 20 and 500
4. above 500
Answer : 3
Q23. The most commonly used transistor arrangement is …………… arrangement
1. common emitter
2. common base
3. common collector
Answer : 1
Q24. The input impedance of a transistor connected in …………….. arrangement is the
highest
1. common emitter
2. common collector
3. common base
Answer : 2
Q25. The output impedance of a transistor connected in ……………. arrangement is the

highest
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12/2/2021
1. common emitter
2. common collector
3. common base
Answer : 3
Q26. The phase difference between the input and output voltages in a common base
arrangement is …………….
1. 180o
2. 90o
3. 270o
4. 0o
Answer : 4
Q27. The power gain in a transistor connected in ……………. arrangement is the highest
1. common emitter
2. common base
3. common collector
Answer : 1
Q28. The phase difference between the input and output voltages of a transistor connected
in common emitter arrangement is ………………
1. 0o
2. 180o
3. 90o
4. 270o
Answer : 2
Q29. The voltage gain in a transistor connected in ………………. arrangement is the highest
1. common base
2. common collector
3. common emitter
Answer : 3
Q30. As the temperature of a transistor goes up, the base-emitter resistance ……………
1. decreases
2. increases
3. remains the same
Answer : 1
Q31. The voltage gain of a transistor connected in common collector arrangement is ………..
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12/2/2021
1. equal to 1
2. more than 10
3. more than 100
4. less than 1
Answer : 4
Q32. The phase difference between the input and output voltages of a transistor connected
in common collector arrangement is ………………
1. 180o
2. 0o
3. 90o
4. 270o
Answer : 2
Q33. IC = β IB + ………..
1. ICBO
2. IC
3. ICEO
4. αIE
Answer : 3
Q34. IC = [α / (1 – α )] IB + ………….
1. ICEO
2. ICBO
3. IC
4. (1 – α ) IB
Answer : 1
Q35. IC = [α / (1 – α )] IB + […….. / (1 – α )]
1. ICBO
2. ICEO
3. IC
4. IE
Answer : 1
Q36. BC 147 transistor indicates that it is made of …………..
1. germanium
2. silicon
3. carbon
Answer : 2
Q37. ICEO = (………) ICBO
1. β
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12/2/2021
2. 1 + α
3. 1 + β
Answer : 3
Q38. A transistor is connected in CB mode. If it is not connected in CE mode with same bias
voltages, the values of IE, IB and IC will …………..
1. remain the same

2. increase
3. decrease
Answer : 1
Q39. If the value of α is 0.9, then value of β is ………..
1. 9
2. 0.9
3. 900
4. 90
Answer : 4
Q40. In a transistor, signal is transferred from a …………… circuit
1. high resistance to low resistance

2. low resistance to high resistance
3. high resistance to high resistance
4. low resistance to low resistance
Answer : 2
Q41. The arrow in the symbol of a transistor indicates the direction of ………….
1. electron current in the emitter

2. electron current in the collector
3. hole current in the emitter
4. donor ion current
Answer : 3
Q42. The leakage current in CE arrangement is ……………. that in CB arrangement
1. more than
2. less than
3. the same as
Answer : 1
Q43. A heat sink is generally used with a transistor to …………
1. increase the forward current

2. decrease the forward current
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12/2/2021
3. compensate for excessive doping

4. prevent excessive temperature rise
Answer : 4
Q44. The most commonly used semiconductor in the manufacture of a transistor is ………….
1. germanium
2. silicon
3. carbon
Answer : 2
Q45. The collector-base junction in a transistor has ……………..
1. forward bias at all times

2. reverse bias at all times
3. low resistance
Answer : 2
Original URL:http://www.allexamreview.com/2017/01/ee-and-ece-important-mcq-transistors-
1.html
Written By Maxthon

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Power Electronics 1: Two Main Terminal and A Gate Terminal

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12/2/2021

Q1. A Triac has three terminals viz ………………

1. Drain, source, gate

Q2. A triac is equivalent to two SCRs …………..

Q3. A triac is a …………. switch

4. None of the above

1. Frequencies above 20 kHz

1. Remains the same

1. A single junction device

1. Intrinsic stand off ratio

1) Unipolar modulation is generally used in

2) The quadrant operation of BJT is represented by

3) The switching function of semiconductor devices can be characterized with

4) AC power in a load can be controlled by using

5) An SCR is made up of silicon because

7) LISN is a device used to measure conducted emissions. LISN stands for

9) In a load commutated DC – DC chopper, the capacitor has a

10) Voltage commutation circuit can be converted into a current commutation by

13) In radiative coupling, the emitter radiation field

14) The effects of EMI can be reduced by

15) Between the incoming and outgoing devices in voltage commutation

16) During the commutation period in 3 phase converter, overlap time is

17) In a three phase converter, the number of notches per cycle is

20) Under harmonic free load voltages, the 3 phase VSI

23) Double fourier series analysis of PWM is

24) In single phase VSI, the harmonic which is not present is

26) Single phase VSI are mainly used in

27) For bidirectional operation of converters

28) For a buck converter to reduce the conduction losses in diode

29) The conduction losses in IGBT is

30) The power MOSFET device is a

31) With increase in firing angle,

a. Both harmonic distortion and quality of input current

34) Harmonics in 3 phase inverters can be reduced by using

37) A full wave rectifier with resistive load produces

38) A crowbar is a circuit which is used to protect a

39) An SCR can be used

40) TRIAC is a semiconductor power electronic device which contains

41) Silicon controlled rectifier can be turned on

43) A carrier based PWM technique in CSI is composed of

44) In variable frequency, PWM gain

45) In constant frequency PWM, at perturbation the amplitude of the sinusoidal

46) The transfer function of PWM is generally developed in

47) In the SPWM, the modulating signal is

ANSWER: Either (a) or (b)

50) A step – down choppers can be used in

1) The output current in PWM DC – DC converters is equal to

2) The opposite of susceptibility is

3) The ability of an electronic system to function properly in its intended electromagnetic

6) In square wave operation mode of 3 phase VSI, the VSI

a. Can control the load voltage

8) Regulator sampling PWM is usually used in

a. Boost single – phase power factor converter

a. Motoring mode operation

a. High dv / dt, low di / dt

12) Advantages of Cuk converter is / are

a. Large number of reactive component

14) In a push – pull converter, the filter capacitor can be obtained as

15) MOSFET stands for

a. Metal – oxide semiconductor field effect transistor

16) A MOSFET, for its conduction uses

a. Only minority carriers