MITSUBISHI <INTELLIGENT POWER MODULES>

PM100RLA060
FLAT-BASE TYPE
INSULATED PACKAGE

PM100RLA060 FEATURE
a) Adopting new 5th generation IGBT (CSTBT) chip, which
performance is improved by 1µm fine rule process.
For example, typical Vce(sat)=1.5V @Tj=125°C
b) I adopt the over-temperature conservation by Tj detection of
CSTBT chip, and error output is possible from all each con-
servation upper and lower arm of IPM.
c) New small package
Reduce the package size by 10%, thickness by 22% from
S-DASH series.
d) Current rating of brake part increased.
50% for the current rating of inverter part.
• 3φ 100A, 600V Current-sense IGBT type inverter
• 50A, 600V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, short-
circuit, over-temperature & under-voltage (P-Fo available
from upper arm devices)
• Acoustic noise-less 11kW class inverter application
• UL Recognized Yellow Card No.E80276(N)
File No.E80271

APPLICATION
General purpose inverter, servo drives and other motor controls

PACKAGE OUTLINES Dimensions in mm

11 120

7 106
3.25 16
19.75 16 16 16 15.25
2-φ5.5
19.75 3-2 3-2 3-2 6-2 3
MOUNTING HOLES
12

2-φ2.5
17.5

55

1 5 9 13 19
17.5

32
14.5

B U V W
11.75
13.5

6-M5 NUTS

10.75 12 22 +– 10.5
(SCREWING DEPTH)

32.75 23 23 23

Terminal code

19-■0.5 1. VUPC 11. WP

2. UFO 12. VWP1
3. UP 13. VNC
7

13

4. VUP1 14. VN1

31

5. VVPC 15. Br
12

6. VFO 16. UN
7. VP 17. VN
8. VVP1 18. WN
9. VWPC 19. Fo
10. WFO

May 2005
 MITSUBISHI <INTELLIGENT POWER MODULES>

PM100RLA060
FLAT-BASE TYPE
INSULATED PACKAGE

INTERNAL FUNCTIONS BLOCK DIAGRAM

WP VWP1 VP VVP1 UP VUP1

Br Fo VNC WN VN1 VN UN VWPC WFO VVPC VFO VUPC UFO

1.5k
1.5k 1.5k 1.5k

Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc

Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT

B N W V U P

MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)

INVERTER PART
Symbol Parameter Condition Ratings Unit
VCES Collector-Emitter Voltage VD = 15V, VCIN = 15V 600 V
±IC Collector Current TC = 25°C 100 A
±ICP Collector Current (Peak) TC = 25°C 200 A
PC Collector Dissipation TC = 25°C (Note-1) 462 W
Tj Junction Temperature –20 ~ +150 °C

BRAKE PART
Symbol Parameter Condition Ratings Unit
VCES Collector-Emitter Voltage VD = 15V, VCIN = 15V 600 V
IC Collector Current TC = 25°C 50 A
ICP Collector Current (Peak) TC = 25°C 100 A
PC Collector Dissipation TC = 25°C (Note-1) 297 W
VR(DC) FWDi Rated DC Reverse Voltage TC = 25°C 600 V
IF FWDi Forward Current TC = 25°C 50 A
Tj Junction Temperature –20 ~ +150 °C

CONTROL PART
Symbol Parameter Condition Ratings Unit
Applied between : VUP1-VUPC
VD Supply Voltage 20 V
VVP1-VVPC, VWP1-VWPC, VN1-VNC
Applied between : UP-VUPC, VP-VVPC
VCIN Input Voltage 20 V
WP-VWPC, UN • VN • WN • Br-VNC
Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC
VFO Fault Output Supply Voltage 20 V
FO-VNC
IFO Fault Output Current Sink current at UFO, VFO, WFO, FO terminals 20 mA

May 2005
 MITSUBISHI <INTELLIGENT POWER MODULES>

PM100RLA060
FLAT-BASE TYPE
INSULATED PACKAGE

TOTAL SYSTEM
Symbol Parameter Condition Ratings Unit
Supply Voltage Protected by VD = 13.5 ~ 16.5V, Inverter Part,
VCC(PROT) Tj = +125°C Start 400 V
SC
VCC(surge) Supply Voltage (Surge) Applied between : P-N, Surge value 500 V
Tstg Storage Temperature –40 ~ +125 °C
Viso Isolation Voltage 60Hz, Sinusoidal, Charged part to Base, AC 1 min. 2500 Vrms

THERMAL RESISTANCES
Limits
Symbol Parameter Condition Unit
Min. Typ. Max.
Rth(j-c)Q Inverter IGBT (per 1 element) (Note-1) — — 0.27*
Rth(j-c)F Junction to case Thermal Inverter FWDi (per 1 element) (Note-1) — — 0.43*
Rth(j-c)Q Resistances Brake IGBT (Note-1) — — 0.42*
°C/W
Rth(j-c)F Brake FWDi (Note-1) — — 0.71*
Case to fin, (per 1 module)
Rth(c-f) Contact Thermal Resistance — — 0.038
Thermal grease applied (Note-1)
* If you use this value, Rth(f-a) should be measured just under the chips.

(Note-1) Tc (under the chip) measurement point is below. (unit : mm)

arm UP VP WP UN VN WN Br
axis IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi
X 28.3 28.0 65.0 65.2 87.0 87.2 39.3 39.5 54.0 53.7 76.0 75.7 17.5 18.7
Y –8.5 1.7 –8.5 1.7 –8.5 1.7 6.5 –5.2 6.5 –5.2 6.5 –5.2 –10.4 4.0

Bottom view

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)

INVERTER PART
Limits
Symbol Parameter Condition Unit
Min. Typ. Max.
Collector-Emitter VD = 15V, IC = 100A Tj = 25°C — 1.6 2.1
VCE(sat) V
Saturation Voltage VCIN = 0V (Fig. 1) Tj = 125°C — 1.5 2.0
VEC FWDi Forward Voltage –IC = 100A, VD = 15V, VCIN = 15V (Fig. 2) — 2.2 3.3 V
ton 0.5 1.0 2.4
VD = 15V, VCIN = 0V↔15V
trr — 0.2 0.4
VCC = 300V, IC = 100A µs
tc(on) Switching Time — 0.4 1.0
Tj = 125°C
toff — 1.2 2.5
Inductive Load (Fig. 3,4)
tc(off) — 0.5 1.0
Collector-Emitter Tj = 25°C — — 1
ICES VCE = VCES, VCIN = 15V (Fig. 5) mA
Cutoff Current Tj = 125°C — — 10

May 2005
 MITSUBISHI <INTELLIGENT POWER MODULES>

PM100RLA060
FLAT-BASE TYPE
INSULATED PACKAGE

BRAKE PART
Limits
Symbol Parameter Condition Unit
Min. Typ. Max.
Collector-Emitter VD = 15V, IC = 50A Tj = 25°C — 1.6 2.1
VCE(sat) V
Saturation Voltage VCIN = 0V (Fig. 1) Tj = 125°C — 1.5 2.0
VFM FWDi Forward Voltage IF = 50A (Fig. 2) — 2.2 3.3 V
Collector-Emitter Tj = 25°C — — 1
ICES VCE = VCES, VCIN = 15V (Fig. 5) mA
Cutoff Current Tj = 125°C — — 10

CONTROL PART
Limits
Symbol Parameter Condition Unit
Min. Typ. Max.
VN1-VNC — 20 30
ID Circuit Current VD = 15V, VCIN = 15V mA
V*P1-V*PC — 5 10
Vth(ON) Input ON Threshold Voltage Applied between : UP-VUPC, VP-VVPC, WP-VWPC 1.2 1.5 1.8
V
Vth(OFF) Input OFF Threshold Voltage UN • VN • WN • Br-VNC 1.7 2.0 2.3
Inverter part 200 — —
SC Short Circuit Trip Level –20 ≤ Tj ≤ 125°C, VD = 15V (Fig. 3,6) A
Brake part 100 — —
Short Circuit Current Delay
toff(SC) VD = 15V (Fig. 3,6) — 0.2 — µs
Time
OT VD = 15V Trip level 135 145 —
Over Temperature Protection °C
OTr Detect Tj of IGBT chip Reset level — 125 —
UV Supply Circuit Under-Voltage Trip level 11.5 12.0 12.5
–20 ≤ Tj ≤ 125°C V
UVr Protection Reset level — 12.5 —
IFO(H) — — 0.01
Fault Output Current VD = 15V, VFO = 15V (Note-2) mA
IFO(L) — 10 15
Minimum Fault Output Pulse
tFO VD = 15V (Note-2) 1.0 1.8 — ms
Width
(Note-2) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to
protect it.

MECHANICAL RATINGS AND CHARACTERISTICS

Limits
Symbol Parameter Condition Unit
Min. Typ. Max.
— Mounting torque Main terminal screw : M5 2.5 3.0 3.5 N•m
— Mounting torque Mounting part screw : M5 2.5 3.0 3.5 N•m
— Weight — — 380 — g

RECOMMENDED CONDITIONS FOR USE

Symbol Parameter Condition Recommended value Unit
VCC Supply Voltage Applied across P-N terminals ≤ 400 V
Applied between : VUP1-VUPC, VVP1-VVPC
VD Control Supply Voltage 15 ± 1.5 V
VWP1-VWPC, VN1-VNC (Note-3)
VCIN(ON) Input ON Voltage Applied between : UP-VUPC, VP-VVPC, WP-VWPC ≤ 0.8
V
VCIN(OFF) Input OFF Voltage UN • VN • WN • Br-VNC ≥ 9.0
fPWM PWM Input Frequency Using Application Circuit of Fig. 8 ≤ 20 kHz
Arm Shoot-through
tdead For IPM’s each input signals (Fig. 7) ≥ 2.0 µs
Blocking Time

(Note-3) With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peak

May 2005
 MITSUBISHI <INTELLIGENT POWER MODULES>

PM100RLA060
FLAT-BASE TYPE
INSULATED PACKAGE

PRECAUTIONS FOR TESTING

1. Before appling any control supply voltage (VD), the input terminals should be pulled up by resistores, etc. to their corre-
sponding supply voltage and each input signal should be kept off state.
After this, the specified ON and OFF level setting for each input signal should be done.
2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be al-
lowed to rise above VCES rating of the device.
(These test should not be done by using a curve tracer or its equivalent.)
P, (U,V,W,B) P, (U,V,W)

IN IN

VCIN
Fo
V Ic VCIN
Fo
V –Ic
(0V) (15V)

U,V,W, (N) U,V,W,B, (N)

VD (all) VD (all)
Fig. 1 VCE(sat) Test Fig. 2 VEC, (VFM) Test

a) Lower Arm Switching

P
Fo trr
VCIN Signal input VCE
Irr Ic
(15V) (Upper Arm) U,V,W
CS Vcc
90%
Signal input Fo 90%
VCIN (Lower Arm)
N
VD (all) Ic 10% 10%
b) Upper Arm Switching 10% 10%
P
Fo tc(on) tc(off)
VCIN Signal input
(Upper Arm) VCIN
U,V,W
CS Vcc td(on) tr td(off) tf
VCIN Fo
Signal input
(15V) (Lower Arm) (ton= td(on) + tr) (toff= td(off) + tf)
N

VD (all) Ic

Fig. 3 Switching time and SC test circuit Fig. 4 Switching time test waveform

VCIN
Short Circuit Current

P, (U,V,W,B)
A Constant Current

IN SC
Fo Pulse VCE
VCIN
(15V) Ic

U,V,W, (N) Fo
VD (all)

toff(SC)
Fig. 5 ICES Test

Fig. 6 SC test waveform

IPM’ input signal VCIN

(Upper Arm)
1.5V 2V 1.5V t
0V
IPM’ input signal VCIN
(Lower Arm)
2V 1.5V 2V t
0V
tdead tdead tdead

1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value

Fig. 7 Dead time measurement point example

May 2005
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PM100RLA060
FLAT-BASE TYPE
INSULATED PACKAGE

P
20k ≥10µ VUP1
Vcc OT
→ UFo 1.5k OUT
Fo +
VD IF
UP Si
In
–
VUPC U
GND GND
≥0.1µ
VVP1 OT
Vcc
VFo 1.5k OUT
Fo
VD VP
Si
In
VVPC V
GND GND M
VWP1 OT
Vcc
WFo 1.5k OUT
Fo
VD WP Si
In
VWPC W
GND GND
20k
OT
→ Vcc
≥10µ OUT
IF Fo
UN Si
In
GND GND
≥0.1µ
N

20k OT
→ Vcc
≥10µ OUT
IF Fo Si
VN
In
GND GND
≥0.1µ
20k VN1 OT
→ Vcc
≥10µ
Fo OUT
VD IF
WN Si
In
GND GND
≥0.1µ VNC B
4.7k OT
→ Vcc
OUT
IF Fo
Br Si
In

5V 1k GND GND
Fo 1.5k

: Interface which is the same as the U-phase

Fig. 8 Application Example Circuit

NOTES FOR STABLE AND SAFE OPERATION ;

•Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the
stray capacity between the input and output wirings of opto-coupler.
•Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.
•Fast switching opto-couplers: tPLH, tPHL ≤ 0.8µs, Use High CMR type.
•Slow switching opto-coupler: CTR > 100%
•Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the
power supply.
•Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N
terminal.
•Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line
and improve noise immunity of the system.

May 2005
 MITSUBISHI <INTELLIGENT POWER MODULES>

PM100RLA060
FLAT-BASE TYPE
INSULATED PACKAGE

PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
OUTPUT CHARACTERISTICS VOLTAGE (VS. Ic) CHARACTERISTICS
(INVERTER PART · TYPICAL) (INVERTER PART · TYPICAL)
120 2

SATURATION VOLTAGE VCE (sat) (V)

Tj = 25°C 15V VD = 15V
COLLECTOR CURRENT IC (A)

100

COLLECTOR-EMITTER
VD = 17V 13V 1.5
80

60 1

40
0.5
20
Tj = 25°C
Tj = 125°C
0 0
0 0.5 1 1.5 2 0 20 40 60 80 100

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. VD) CHARACTERISTICS SWITCHING TIME CHARACTERISTICS
(INVERTER PART · TYPICAL) (TYPICAL)
2 101
SATURATION VOLTAGE VCE (sat) (V)

7 VCC = 300V
SWITCHING TIME tc(on), tc(off) (µs)

5 VD = 15V
4 Tj = 25°C
COLLECTOR-EMITTER

1.5 3 Tj = 125°C
2 Inductive load

1 100
7 tc(off)
5
4
0.5 3 tc(on)
IC = 100A
Tj = 25°C 2 tc(off)
Tj = 125°C
0 10–1
12 13 14 15 16 17 18 4 5 7 101 2 3 4 5 7 102 2 3

CONTROL SUPPLY VOLTAGE VD (V) COLLECTOR CURRENT IC (A)

SWITCHING TIME CHARACTERISTICS SWITCHING LOSS CHARACTERISTICS

SWITCHING LOSS ESW(on), ESW(off) (mJ/pulse)

(TYPICAL) (TYPICAL)
101 101
VCC = 300V 7 ESW(on)
7
VD = 15V 5
SWITCHING TIME ton, toff (µs)

5 4
4 Tj = 25°C
Tj = 125°C 3
3
Inductive load 2
2 ton
100 ESW(off)
100 7
5
7 toff 4
5 toff 3
4
VCC = 300V
2
3 VD = 15V
10–1 Tj = 25°C
2 Tj = 125°C
7
5 Inductive load
10–1 4
4 5 7 101 2 3 4 5 7 102 2 3 2 3 4 5 7 101 2 3 4 5 7 102 2

COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A)

May 2005
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PM100RLA060
FLAT-BASE TYPE
INSULATED PACKAGE

DIODE FORWARD CHARACTERISTICS DIODE REVERSE RECOVERY CHARACTERISTICS

(INVERTER PART · TYPICAL) (TYPICAL)
COLLECTOR RECOVERY CURRENT –IC (A)

REVERSE RECOVERY CURRENT lrr (A)

102 100 102
VD = 15V

REVERSE RECOVERY TIME trr (µs)

7 7 7
5 5 5
4 4 4
3 3 Irr 3
2 2 2

101 10–1 trr 101

7 7 7
5 5 5
4 4 VCC = 300V 4
3 3 VD = 15V 3
Tj = 25°C
2 Tj = 25°C 2 2
Tj = 125°C
Tj = 125°C Inductive load
100 10–2 100
0 0.5 1 1.5 2 2.5 2 3 4 5 7 101 2 3 4 5 7 102 2 3

EMITTER-COLLECTOR VOLTAGE VEC (V) COLLECTOR RECOVERY CURRENT –IC (A)

COLLECTOR-EMITTER SATURATION
OUTPUT CHARACTERISTICS VOLTAGE (VS. Ic) CHARACTERISTICS
(BRAKE PART · TYPICAL) (BRAKE PART · TYPICAL)
60 2
SATURATION VOLTAGE VCE (sat) (V)

Tj = 25°C 15V 13V VD = 15V

COLLECTOR CURRENT IC (A)

50
VD = 17V
COLLECTOR-EMITTER

1.5
40

30 1

20
0.5
10
Tj = 25°C
Tj = 125°C
0 0
0 0.5 1 1.5 2 0 10 20 30 40 50 60

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. VD) CHARACTERISTICS DIODE FORWARD CHARACTERISTICS
(BRAKE PART · TYPICAL) (BRAKE PART · TYPICAL)
COLLECTOR RECOVERY CURRENT –IC (A)

2 102
SATURATION VOLTAGE VCE (sat) (V)

7 VD = 15V
5
4
3
COLLECTOR-EMITTER

1.5 2

101
7
5
4
1 3
2

100
7
0.5 5
IC = 50A 4
3
Tj = 25°C Tj = 25°C
2
Tj = 125°C Tj = 125°C
0 10–1
12 13 14 15 16 17 18 0 0.5 1 1.5 2 2.5

CONTROL SUPPLY VOLTAGE VD (V) EMITTER-COLLECTOR VOLTAGE VEC (V)

May 2005
 MITSUBISHI <INTELLIGENT POWER MODULES>

PM100RLA060
FLAT-BASE TYPE
INSULATED PACKAGE

TRANSIENT THERMAL
ID VS. fc CHARACTERISTICS IMPEDANCE CHARACTERISTICS
(TYPICAL) (INVERTER PART)
50 100
VD = 15V 7

THERMAL IMPEDANCE Zth (j – c)

5
Tj = 25°C

NORMALIZED TRANSIENT
40 3
N-side 2

10–1
30 7
ID (mA)

5
3
2
20
10–2 Single Pulse
7
P-side 5 IGBT Part;
10 Per unit base = Rth(j – c)Q = 0.27°C/W
3
2
FWDi Part;
Per unit base = Rth(j – c)F = 0.43°C/W
0 10–3 –5
0 5 10 15 20 25 10 2 3 5 710–4 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7100 2 3 5 7101

fc (kHz) TIME (s)

TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(BRAKE PART)
100
7
THERMAL IMPEDANCE Zth (j – c)

5
NORMALIZED TRANSIENT

3
2

10–1
7
5
3
2

10–2 Single Pulse

7
5 IGBT Part;
Per unit base = Rth(j – c)Q = 0.42°C/W
3
2
FWDi Part;
Per unit base = Rth(j – c)F = 0.71°C/W
10–3 –5
10 2 3 5 710–4 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7100 2 3 5 7101

TIME (s)

May 2005