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PM100RL1A120
FLAT-BASE TYPE
INSULATED PACKAGE
PM100RL1A120
FEATURE
Inverter + Brake + Drive & Protection IC
APPLICATION
General purpose inverter, servo drives and other motor controls
135
122.1 11.7
110±0.5 6.05 (Screwing Depth)
6-M5 Nuts 13
26 26 40.5
(13)
18.7
6.05
18
W V U
10.5
21.5
B
110
20
N
90.1
78±0.5
71.5
66.5
20
3.25
11
19 13 9 5 1
4-φ5.5
Mounting Holes 30.15 11
2-φ2.5 19- 0.5 4
Terminal code
34.7
33.6
November
May 2012
2009
1
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RL1A120
FLAT-BASE TYPE
INSULATED PACKAGE
1.5k
1.5k 1.5k 1.5k
Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc
Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT
B N W V U P
BRAKE PART
Symbol Parameter Condition Ratings Unit
VCES Collector-Emitter Voltage VD = 15V, VCIN = 15V 1200 V
IC Collector Current TC = 25°C (Note-1) 50 A
ICP Collector Current (Peak) TC = 25°C 100 A
PC Collector Dissipation TC = 25°C (Note-1) 462 W
IF FWDi Forward Current TC = 25°C 50 A
VR(DC) FWDi Rated DC Reverse Voltage TC = 25°C 1200 V
Tj Junction Temperature –20 ~ +150 °C
CONTROL PART
Symbol Parameter Condition Ratings Unit
Applied between : VUP1-VUPC, VVP1-VVPC
VD Supply Voltage 20 V
VWP1-VWPC, VN1-VNC
Applied between : UP-VUPC, VP-VVPC, WP-VWPC
VCIN Input Voltage 20 V
UN • VN • WN • Br-VNC
Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC
VFO Fault Output Supply Voltage 20 V
FO-VNC
IFO Fault Output Current Sink current at UFO, VFO, WFO, FO terminals 20 mA
November
May 2012
2009
2
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RL1A120
FLAT-BASE TYPE
INSULATED PACKAGE
TOTAL SYSTEM
Symbol Parameter Conditions Ratings Unit
Supply Voltage Protected by VD =13.5V ~ 16.5V
VCC(PROT) 800 V
SC Inverter Part, Tj =+125°C Start
VCC(surge) Supply Voltage (Surge) Applied between : P-N, Surge value 1000 V
Tstg Storage Temperature -40 ~ +125 °C
60Hz, Sinusoidal, Charged part to Base plate,
Viso Isolation Voltage 2500 V
AC 1min, RMS
*: TC measurement point is just under the chip.
THERMAL RESISTANCE
Limits
Symbol Parameter Conditions Unit
Min. Typ. Max.
Rth(j-c)Q Thermal Resistance Inverter, IGBT (per 1 element) (Note.1) - - 0.19
Rth(j-c)F Inverter, FWDi (per 1 element) (Note.1) - - 0.31
Rth(j-c)Q Brake, IGBT (Note.1) - - 0.27
°C/W
Rth(j-c)F Brake, FwDi upper part (Note.1) - - 0.47
Case to fin, (per 1 module)
Rth(c-f) Contact Thermal Resistance - - 0.023
Thermal grease applied (Note.1)
Note.1: If you use this value, Rth(f-a) should be measured just under the chips.
November 2012
November. 2012
3
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RL1A120
FLAT-BASE TYPE
INSULATED PACKAGE
BRAKE PART
Limits
Symbol Parameter Condition Unit
Min. Typ. Max.
Collector-Emitter Saturation VD = 15V, IC = 50A Tj = 25°C — 1.65 2.15
VCE(sat) V
Voltage VCIN = 0V, Pulsed (Fig. 1) Tj = 125°C — 1.85 2.35
VEC FWDi Forward Voltage –IC = 50A, VCIN = 15V, VD = 15V (Fig. 2) — 2.3 3.3 V
Collector-Emitter Cutoff Tj = 25°C — — 1
ICES VCE = VCES, VD = 15V (Fig. 5) mA
Current Tj = 125°C — — 10
CONTROL PART
Limits
Symbol Parameter Condition Unit
Min. Typ. Max.
VN1-VNC — 8 16
ID Circuit Current VD = 15V, VCIN = 15V mA
V*P1-V*PC — 2 4
Vth(ON) Input ON Threshold Voltage Applied between : UP-VUPC, VP-VVPC, WP-VWPC 1.2 1.5 1.8
V
Vth(OFF) Input OFF Threshold Voltage UN • VN • WN • Br-VNC 1.7 2.0 2.3
Inverter part 200 — —
SC Short Circuit Trip Level –20 ≤ Tj ≤ 125°C, VD = 15V (Fig. 3,6) A
Brake part 100 — —
Short Circuit Current Delay
toff(SC) VD = 15V (Fig. 3,6) — 0.2 — µs
Time
OT Trip level 135 — —
Over Temperature Protection Detect Temperature of IGBT chip °C
OT(hys) Hysteresis — 20 —
UV Supply Circuit Under-Voltage Trip level 11.5 12.0 12.5
–20 ≤ Tj ≤ 125°C V
UVr Protection Reset level — 12.5 —
IFO(H) — — 0.01
Fault Output Current VD = 15V, VCIN = 15V (Note-2) mA
IFO(L) — 10 15
Minimum Fault Output Pulse
tFO VD = 15V (Note-2) 1.0 1.8 — ms
Width
(Note-2) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to
protect it.
(Note-3) With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peak
≤ ± 5V/µs
≤ 2V
15V
GND
November
May 2012
2009
4
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RL1A120
FLAT-BASE TYPE
INSULATED PACKAGE
IN IN
VCIN
Fo
V Ic VCIN
Fo
V –Ic
(0V) (15V)
VD (all) Ic
Fig. 3 Switching Time and SC Test Circuit Fig. 4 Switching Time Test Waveform
VCIN
Short Circuit Current
P, (U,V,W,B)
A Constant Current
IN SC Trip
Fo Pulse VCE
VCIN
(15V) Ic
U,V,W,B, (N) Fo
VD (all)
toff(SC)
Fig. 5 ICES Test
1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value
November
May 2012
2009
5
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RL1A120
FLAT-BASE TYPE
INSULATED PACKAGE
P
20k ≥10µ VUP1
Vcc OT
→ UFo 1.5k OUT
Fo +
VD IF
UP Si
In
–
VUPC U
GND GND
≥0.1µ
VVP1 OT
Vcc
VFo 1.5k OUT
Fo
VD VP
Si
In
VVPC V
GND GND M
VWP1 OT
Vcc
WFo 1.5k OUT
Fo
VD WP Si
In
VWPC W
GND GND
20k
OT
→ Vcc
≥10µ OUT
IF Fo
UN Si
In
N
GND GND
≥0.1µ
20k OT
→ ≥10µ
Vcc
OUT
IF Fo Si
VN
In
GND GND
≥0.1µ
20k VN1 OT
→ Vcc
≥10µ
Fo OUT
VD IF
WN Si
In
GND GND
≥0.1µ VNC B
4.7k OT
→ Vcc
OUT
IF Fo
Br Si
In
5V 1k GND GND
Fo 1.5k
November
May 2012
2009
6
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RL1A120
FLAT-BASE TYPE
INSULATED PACKAGE
PERFORMANCE CURVES
(Inverter Part) COLLECTOR-EMITTER SATURATION
OUTPUT CHARACTERISTICS VOLTAGE (VS. Ic) CHARACTERISTICS
(TYPICAL) (TYPICAL)
140 2.5
120
2.0
COLLECTOR-EMITTER
100
13V 1.5
80
60
1.0
40
0.5
20 Tj = 25°C
Tj = 125°C
0 0
0 0.5 1.0 1.5 2.0 0 20 40 60 80 100 120 140
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. VD) CHARACTERISTICS DIODE FORWARD CHARACTERISTICS
(TYPICAL) (TYPICAL)
COLLECTOR RECOVERY CURRENT –IC (A)
103
SATURATION VOLTAGE VCE(sat) (V)
2.4 7 VD = 15V
5
3
2.2
COLLECTOR-EMITTER
2.0 102
7
5
1.8
3
2
1.6
101
1.4 7
5
IC = 100A 3
1.2 Tj = 25°C Tj = 25°C
2
Tj = 125°C Tj = 125°C
1.0 100
12 13 14 15 16 17 18 0 0.5 1.0 1.5 2.0 2.5
SWITCHING TIME (ton, toff) CHARACTERISTICS SWITCHING TIME (tc(on), tc(off)) CHARACTERISTICS
(TYPICAL) (TYPICAL)
101 101
VCC = 600V VCC = 600V
SWITCHING TIME tc(on), tc(off) (µs)
7 7
VD = 15V VD = 15V
SWITCHING TIME ton, toff (µs)
5 5
4 Tj = 25°C 4 Tj = 25°C
3 Tj = 125°C 3 Tj = 125°C
Inductive load Inductive load
2 2
toff
10–1 0 10–1 0
10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
November
May 2012
2009
7
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RL1A120
FLAT-BASE TYPE
INSULATED PACKAGE
60.0
3.0
40.0
2.0
P-side
1.0 20.0
0 0
0 20 40 60 80 100 120 0 5 10 15 20 25
SC
10 1.0
8 0.8
6 0.6
4 0.4
2 0.2
0 0
–50 0 50 100 150 –50 0 50 100 150
Tj (°C) Tj (°C)
November
May 2012
2009
8
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RL1A120
FLAT-BASE TYPE
INSULATED PACKAGE
(Brake Part)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS OUTPUT CHARACTERISTICS
(TYPICAL) (TYPICAL)
100 60
7 Tj = 25°C 15V
5
THERMAL IMPEDANCE Zth(j-c)
3 50
2
13V
10–1 40
7
5
3 30
2
VD = 15V 2.4
2.0 2.2
COLLECTOR-EMITTER
COLLECTOR-EMITTER
2.0
1.5
1.8
1.0 1.6
1.4
0.5 IC = 50A
Tj = 25°C 1.2 Tj = 25°C
Tj = 125°C Tj = 125°C
0 1.0
0 10 20 30 40 50 60 70 12 13 14 15 16 17 18
TRANSIENT THERMAL
DIODE FORWARD CHARACTERISTICS IMPEDANCE CHARACTERISTICS
(TYPICAL) (TYPICAL)
COLLECTOR RECOVERY CURRENT –IC (A)
102 100
7
VD = 15V 7
5
THERMAL IMPEDANCE Zth(j-c)
NORMALIZED TRANSIENT
5 3
4
2
3
2 10–1
7
5
101 3
7 2
5 10–2 Single Pulse
4 7
3 5 IGBT part;
3
Per unit base = Rth(j-c)Q = 0.28°C/ W
2
Tj = 25°C 2 FWDi part;
Tj = 125°C Per unit base = Rth(j-c)F = 0.48°C/ W
100 10–3 –5
0 0.5 1.0 1.5 2.0 2.5 10 2 3 5 710–4 2 3 5 710–32 3 5 710–2 2 3 5 710–12 3 5 7100 2 3 5 7101
November
May 2012
2009