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PM50CL1B120
FLAT-BASE TYPE
INSULATED PACKAGE
PM50CL1B120
FEATURE
Inverter + Drive & Protection IC
APPLICATION
General purpose inverter, servo drives and other motor controls
L A B E L
120
7 106 ±0.25
19.75 66.5 17
3.25 16 16 16 15.25 16
3-2 3-2 3-2 6-2 1.5 3
1.5
1
4 4
25.75
2-φ2.5
N
55
35
2-φ5.5
1 5 9 13 19
P
25
MOUNTING HOLES
4 4
B U V W
1
4-
4 4 4 4 4 4 4 4 φ2 9.5
.5
2.5 19.5
22 23 23 23 Terminal code
7.75 98.25 1. VUPC 11. WP
19-■0.5 2. UFO 12. VWP1
3. UP 13. VNC
11.5
5. VVPC 15. NC
27.5
6. VFO 16. UN
7. VP 17. VN
8. VVP1 18. WN
9. VWPC 19. Fo
10. WFO
May 2009
1
MITSUBISHI <INTELLIGENT POWER MODULES>
PM50CL1B120
FLAT-BASE TYPE
INSULATED PACKAGE
Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc
Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT
NC N W V U P
CONTROL PART
Symbol Parameter Condition Ratings Unit
Applied between : VUP1-VUPC, VVP1-VVPC
VD Supply Voltage 20 V
VWP1-VWPC, VN1-VNC
Applied between : UP-VUPC, VP-VVPC, WP-VWPC
VCIN Input Voltage 20 V
UN • VN • WN-VNC
Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC
VFO Fault Output Supply Voltage 20 V
FO-VNC
IFO Fault Output Current Sink current at UFO, VFO, WFO, FO terminals 20 mA
May 2009
2
MITSUBISHI <INTELLIGENT POWER MODULES>
PM50CL1B120
FLAT-BASE TYPE
INSULATED PACKAGE
TOTAL SYSTEM
Symbol Parameter Condition Ratings Unit
Supply Voltage Protected by VD = 13.5 ~ 16.5V
VCC(PROT) Inverter Part, Tj = +125°C Start 800 V
SC
VCC(surge) Supply Voltage (Surge) Applied between : P-N, Surge value 1000 V
Tstg Storage Temperature –40 ~ +125 °C
Viso Isolation Voltage 60Hz, Sinusoidal, Charged part to Base, AC 1 min. 2500 Vrms
THERMAL RESISTANCES
Limits
Symbol Parameter Condition Unit
Min. Typ. Max.
Rth(j-c)Q Junction to case Thermal Inverter IGBT part (per 1 element) (Note-1) — — 0.27
Rth(j-c)F Resistances Inverter FWDi part (per 1 element) (Note-1) — — 0.47
°C/W
Case to fin, (per 1 module)
Rth(c-f) Contact Thermal Resistance — — 0.038
Thermal grease applied (Note-1)
* If you use this value, Rth(f-a) should be measured just under the chips.
Bottom view
May 2009
3
MITSUBISHI <INTELLIGENT POWER MODULES>
PM50CL1B120
FLAT-BASE TYPE
INSULATED PACKAGE
CONTROL PART
Limits
Symbol Parameter Condition Unit
Min. Typ. Max.
VN1-VNC — 6 12
ID Circuit Current VD = 15V, VCIN = 15V mA
V*P1-V*PC — 2 4
Vth(ON) Input ON Threshold Voltage Applied between : UP-VUPC, VP-VVPC, WP-VWPC 1.2 1.5 1.8
V
Vth(OFF) Input OFF Threshold Voltage UN • VN • WN-VNC 1.7 2.0 2.3
SC Short Circuit Trip Level –20 ≤ Tj ≤ 125°C, VD = 15V (Fig. 3,6) 100 — — A
Short Circuit Current Delay
toff(SC) VD = 15V (Fig. 3,6) — 0.2 — µs
Time
OT Trip level 135 — —
Over Temperature Protection Detect Temperature of IGBT chip °C
OT(hys) Hysteresis — 20 —
UV Supply Circuit Under-Voltage Trip level 11.5 12.0 12.5
–20 ≤ Tj ≤ 125°C V
UVr Protection Reset level — 12.5 —
IFO(H) — — 0.01
Fault Output Current VD = 15V, VCIN = 15V (Note-2) mA
IFO(L) — 10 15
Minimum Fault Output Pulse
tFO VD = 15V (Note-2) 1.0 1.8 — ms
Width
(Note-2) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to
protect it.
(Note-3) With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peak
≤ ± 5V/µs
≤ 2V
15V
GND
May 2009
4
MITSUBISHI <INTELLIGENT POWER MODULES>
PM50CL1B120
FLAT-BASE TYPE
INSULATED PACKAGE
IN IN
VCIN
Fo
V Ic VCIN
Fo
V –Ic
(0V) (15V)
VD (all) Ic
Fig. 3 Switching Time and SC Test Circuit Fig. 4 Switching Time Test Waveform
VCIN
Short Circuit Current
P, (U,V,W)
A Constant Current
IN SC Trip
Fo Pulse VCE
VCIN
(15V) Ic
U,V,W, (N) Fo
VD (all)
toff(SC)
Fig. 5 ICES Test
1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value
May 2009
5
MITSUBISHI <INTELLIGENT POWER MODULES>
PM50CL1B120
FLAT-BASE TYPE
INSULATED PACKAGE
P
20k ≥10µ VUP1
Vcc OT
→ UFo 1.5k OUT
Fo +
VD IF
UP Si
In
–
VUPC U
GND GND
≥0.1µ
VVP1 OT
Vcc
VFo 1.5k OUT
Fo
VD VP
Si
In
VVPC V
GND GND M
VWP1 OT
Vcc
WFo 1.5k OUT
Fo
VD WP Si
In
VWPC W
GND GND
20k
OT
→ Vcc
≥10µ OUT
IF Fo
UN Si
In
N
GND GND
≥0.1µ
20k OT
→ ≥10µ
Vcc
OUT
IF Fo Si
VN
In
GND GND
≥0.1µ
20k VN1 OT
→ Vcc
≥10µ
Fo OUT
VD IF
WN Si
In
GND GND NC
≥0.1µ VNC
NC
5V 1k
Fo 1.5k
May 2009
6
MITSUBISHI <INTELLIGENT POWER MODULES>
PM50CL1B120
FLAT-BASE TYPE
INSULATED PACKAGE
PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
OUTPUT CHARACTERISTICS VOLTAGE (VS. Ic) CHARACTERISTICS
(TYPICAL) (TYPICAL)
70 2.5
15V
60
2.0
COLLECTOR-EMITTER
50
13V
1.5
40
30
1.0
20
0.5
10 Tj = 25°C
Tj = 125°C
0 0
0 0.5 1.0 1.5 2.0 0 10 20 30 40 50 60 70
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. VD) CHARACTERISTICS DIODE FORWARD CHARACTERISTICS
(TYPICAL) (TYPICAL)
COLLECTOR RECOVERY CURRENT –IC (A)
102
SATURATION VOLTAGE VCE(sat) (V)
2.4 7
VD = 15V
5
2.2 4
COLLECTOR-EMITTER
3
2.0 2
1.8
101
1.6 7
5
4
1.4
3
IC = 50A
1.2 2
Tj = 25°C Tj = 25°C
Tj = 125°C Tj = 125°C
1.0 100
12 13 14 15 16 17 18 0 0.5 1.0 1.5 2.0 2.5 3.0
SWITCHING TIME (ton, toff) CHARACTERISTICS SWITCHING TIME (tc(on), tc(off)) CHARACTERISTICS
(TYPICAL) (TYPICAL)
101 101
VCC = 600V VCC = 600V
SWITCHING TIME tc(on), tc(off) (µs)
7 7
VD = 15V VD = 15V
SWITCHING TIME ton, toff (µs)
5 5
4 Tj = 25°C 4 Tj = 25°C
3 Tj = 125°C 3 Tj = 125°C
Inductive load Inductive load
2 toff 2
10–1 0 10–1 0
10 2 3 4 5 7 101 2 3 4 5 7 102 10 2 3 4 5 7 101 2 3 4 5 7 102
May 2009
7
MITSUBISHI <INTELLIGENT POWER MODULES>
PM50CL1B120
FLAT-BASE TYPE
INSULATED PACKAGE
2.0 25.0
1.5 20.0
15.0 P-side
1.0
10.0
0.5 5.0
0 0
0 10 20 30 40 50 60 70 0 5 10 15 20 25
SC
10 1.0
8 0.8
6 0.6
4 0.4
2 0.2
0 0
–50 0 50 100 150 –50 0 50 100 150
Tj (°C) Tj (°C)
May 2009
8
MITSUBISHI <INTELLIGENT POWER MODULES>
PM50CL1B120
FLAT-BASE TYPE
INSULATED PACKAGE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(TYPICAL)
100
7
5
THERMAL IMPEDANCE Zth(j-c)
NORMALIZED TRANSIENT
3
2
10–1
7
5
3
2
t(sec)
May 2009