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TPS65135
SLVS704C – NOVEMBER 2011 – REVISED JANUARY 2017
TPS65135
15, 16 13, 14
L1 L2
8 9, 10 VO(POS)
EN OUTP
5 V, 80 mA
VI 1 R1
VIN C2
2.5 V to 5.5 V 365 k
7 4.7 µF
C1 FB
10 µF
C4 R2
100 nF 120 k
4 6
VAUX FBG
C3
5 R3 4.7 µF
GND
487 k
11, 12 2, 3 VO(NEG)
PGND OUTN
±5 V, 80 mA
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS65135
SLVS704C – NOVEMBER 2011 – REVISED JANUARY 2017 www.ti.com
Table of Contents
1 Features .................................................................. 1 7.4 Device Functional Modes........................................ 11
2 Applications ........................................................... 1 8 Application and Implementation ........................ 12
3 Description ............................................................. 1 8.1 Application Information............................................ 12
4 Revision History..................................................... 2 8.2 Typical Application ................................................. 12
5 Pin Configuration and Functions ......................... 3 9 Power Supply Recommendations...................... 19
6 Specifications......................................................... 4 10 Layout................................................................... 19
6.1 Absolute Maximum Ratings ...................................... 4 10.1 Layout Guidelines ................................................. 19
6.2 ESD Ratings.............................................................. 4 10.2 Layout Example .................................................... 20
6.3 Recommended Operating Conditions....................... 4 11 Device and Documentation Support ................. 21
6.4 Thermal Information .................................................. 4 11.1 Device Support...................................................... 21
6.5 Electrical Characteristics........................................... 5 11.2 Receiving Notification of Documentation Updates 21
6.6 Typical Characteristics .............................................. 6 11.3 Community Resources.......................................... 21
7 Detailed Description .............................................. 7 11.4 Trademarks ........................................................... 21
7.1 Overview ................................................................... 7 11.5 Electrostatic Discharge Caution ............................ 21
7.2 Functional Block Diagram ......................................... 8 11.6 Glossary ................................................................ 21
7.3 Feature Description................................................... 9 12 Mechanical, Packaging, and Orderable
Information ........................................................... 21
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
• Changed L2 pin numbers From: 1 and 14 To: 13 and 14 in the Pin Functions table ............................................................ 3
• Changed PGND pin numbers From: 11 and 11 To: 11 and 12 in the Pin Functions table.................................................... 3
• Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional
Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1
• Moved output current mismatch to Recommended Operating Conditions ............................................................................ 4
• Moved maximum output power to Recommended Operating Conditions ............................................................................. 4
• Changed the UVLO threshould max value for VIN falling From: 2 V To 2.1 V ....................................................................... 5
RTE Package
16-Pin WQFN
Top View
L1
L1
L2
L2
16
15
14
13
VIN 1 12 PGND
VAUX 4 9 OUTP
8
GND
FBG
FB
EN
Pin Functions
PIN
I/O DESCRIPTION
NAME NO.
Input pin to enable the device. Pulling this pin high enables the device. This pin has
EN 8 I
an internal 500-kΩ pull-down resistor.
FB 7 I Feedback regulation point for the positive output voltage rail
FBG 6 I Feedback regulation point for the negative output voltage rail
GND 5 – Analog ground
15
L1 I/O Inductor terminal
16
13
L2 I/O Inductor terminal
14
2
OUTN O Negative output
3
9
OUTP O Positive output
10
11
PGND – Power ground
12
VAUX 4 I/O Reference voltage output. This pin requires a 100-nF capacitor for stability.
VIN 1 I Input supply
Exposed thermal
— – Connect this pad to ground
pad
6 Specifications
6.1 Absolute Maximum Ratings (1) (2)
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VIN, EN, VAUX, FB, OUTP, L2 –0.3 7 V
Voltage L1, OUTN –8 7 V
FBG –0.3 0.3 V
Operating junction temperature, TJ –40 150 °C
Operating ambient temperature, TA –40 85 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to ground.
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
1.6 1.6
ID(Q2)max ID(Q2)max
1.5 1.5
Switch Current Limit (A)
1.3 1.3
1.2 1.2
1.1 1.1
1 1
0.9 0.9
0.8 0.8
−50 −25 0 25 50 75 100 125 2.5 3 3.5 4 4.5 5 5.5
Junction Temperature (°C) G000
Input Voltage (V) G000
Figure 1. Switch Current Limit vs Temperature Figure 2. Switch Current Limit vs Input Supply Voltage
10m 10m
II(standby) II(standby)
8m 8m
Input Current (A)
4m 4m
2m 2m
0 0
−50 −25 0 25 50 75 100 125 2.5 3 3.5 4 4.5 5 5.5
Junction Temperature (°C) G000
Input Voltage (V) G000
Figure 3. Input Supply Current vs Temperature Figure 4. Input Supply Current vs Input Supply Voltage
1.250 10m
Vref1 Vref2
Reference Voltage (V)
1.245 5m
1.240 0
1.235 −5m
1.230 −10m
−50 −25 0 25 50 75 100 125 −50 −25 0 25 50 75 100 125
Junction Temperature (°C) G000
Junction Temperature (°C) G000
Figure 5. Reference Voltage Vref1 vs Temperature Figure 6. Reference Voltage Vref2 vs Temperature
7 Detailed Description
7.1 Overview
The TPS65135 device uses a four-switch buck-boost converter topology to generate one negative and one
positive output voltage with a single inductor. The device uses a SIMO topology to achieve excellent line
transient response, buck-boost mode for both outputs, and high efficiency over the entire output current range.
High efficiency over the entire load-current range is implemented by reducing the converter switching frequency
under low load conditions. Out-of-audio mode prevents the switching frequency going below 20 kHz.
The converter operates with two control loops. One error amplifier controls the positive output voltage VO(POS) so
that the FB pin is regulated to 1.24 V. A second error amplifier controls the negative output voltage VO(NEG) so
that the FBG pin is regulated to 0 V. An external feedback divider allows both output voltages to be set to the
desired value. In principle, the SIMO converter topology operates just like any other buck-boost converter
topology, with the difference that the output voltage across the inductor is the sum of the positive and negative
output voltages. With this consideration all calculations of the buck-boost converter apply for this topology as
well. During the first part of a switching cycle Q1 and Q2 are closed, connecting the inductor from VI to ground.
During the second part of a switching cycle, the inductor discharges to the positive and negative outputs by
closing switches Q4 and Q3. Because the inductor is discharged to both of the outputs simultaneously, the
output voltages can be higher or lower than the input voltage. The converter operates best when the positive
output current IO(POS) is equal to the negative output current IO(NEG), for example, as is the case when driving an
AMOLED display. However, asymmetries of up to 50% in load current can be canceled out by the used topology.
In such cases, a third part of the switching cycle is implemented, during which either Q3 is turned off and Q1 is
turned on (as is the case when IO(POS) > IO(NEG)) or Q4 is turned off and Q2 is turned on (as is the case when
IO(NEG) > IO(POS)) (see Table 1).
During light loads the converter operates in DCM, using peak-current control and a switching frequ3ency
determined by a voltage-controlled oscillator (VCO). At higher load currents the converter operates in CCM with
a switching frequency controlled by a fixed off-time. The SIMO regulator topology achieves its best line transient
response when operating in DCM.
L1 L2
I(SNS)
VIN Q1 Q4 OUTP
VI VO(POS)
Q2
FB
PGND
Gate
Driver
FBG
OUTN
VO(NEG)
Q3
I(SNS) V(FB)
±
+ Vref1
Current Limit
V(OUTP) & Soft-Start V(FBG)
Overvoltage & PWM / PFM +
Short-Circuit Control Vref2
V(OUTN) ±
Protection
Out-of-Audio
VCO
Control
TSD
UVLO Device
&
EN enable
EN Ideal diodes
V(VIN)
R(EN) Internal supply
V(OUTP) Linear
Regulator
t
VI
Slope =
L
Figure 7. Inherently Good Line-Transient Regulation
The following formulas describe the operation of the TPS65135 device when operating in CCM with equal
positive and negative output currents. The converter always sees the sum VO of the magnitude of the positive
and negative output voltages, as given by
SPACE
VO = VO(POS) + +VO(NEG) +
where
• VO(POS) is the positive output voltage
• and VO(NEG) is the negative output voltage. (1)
SPACE
The converter duty cycle is calculated using the efficiency estimation from datasheet curves or from real
application measurements. A value of 70% for the efficiency η is a good starting assumption for most
applications.
Copyright © 2011–2017, Texas Instruments Incorporated Submit Documentation Feedback 9
Product Folder Links: TPS65135
TPS65135
SLVS704C – NOVEMBER 2011 – REVISED JANUARY 2017 www.ti.com
0.5 ” d d ”2
IO(POS)
IO(NEG) (6)
SPACE
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
TPS65135
15, 16 13, 14
L1 L2
8 9, 10 VO(POS)
EN OUTP
5 V, 80 mA
VI 1 R1
VIN C2
2.5 V to 5.5 V 365 k
7 4.7 µF
C1 FB
10 µF
C4 R2
100 nF 120 k
4 6
VAUX FBG
C3
5 R3 4.7 µF
GND
487 k
11, 12 2, 3 VO(NEG)
PGND OUTN
±5 V, 80 mA
The TPS65135 device typically requires a 10-µF ceramic input capacitor. Larger values can be used to lower the
input voltage ripple. Table 4 lists capacitors suitable for use on the TPS65135 input.
A 4.7-µF output capacitor is generally sufficient for most applications, but larger values can be used as well for
improved load- and line-transient response at higher load currents. The capacitors of Table 5 have been found to
work well with the TPS65135 device.
R1 = R2 F
VO(POS)
± 1G
Vref1 (10)
SPACE
Inserting R2 = 120 kΩ, Vref1 = 1.24 V and VO(POS) = 5 V into Equation 10, we get
SPACE
5V
R1 = 120 k l ± 1p = 363.9 k
1.24 V (11)
SPACE
The closest 1%-tolerance standard value is 365 kΩ, which will generate a nominal output voltage of 5.012 V.
The value of R3 can be calculated by rearranging Equation 9, so that
SPACE
+VO(NEG) +
R3 = R2 F G
Vref1 (12)
SPACE
Inserting R2 = 120 kΩ, Vref1 = 1.24 V and VO(NEG) = –5 V into Equation 12, we get
SPACE
5V
R3 = 120 k l p = 483.9 k
1.24 V (13)
SPACE
The closest 1%-tolerance standard value is 487 kΩ, which will generate a nominal output voltage of –5.032 V.
L1
TPS65135
15, 16 13, 14
L1 L2
8 9, 10
EN OUTP VO(POS)
1
VI VIN R1
C2
7
C1 FB
R2
C4
4 6
VAUX FBG
5 C3
GND R3
11, 12 2, 3
PGND OUTN VO(NEG)
100 100
90 90
80 80
70 70
Efficiency (%)
Efficiency (%)
60 60
50 50
40 40
30 30
20 VI = 2.5 V 20 VI = 2.5 V
VI = 3.7 V VI = 3.7 V
10 10
VI = 4.5 V VI = 4.5 V
0 0
1m 10m 100m 1m 10m 100m
Output Current (A) G000
Output Current (A) G000
L1 = 2.2 µH L1 = 4.7 µH
Figure 10. Efficiency vs Load Current Figure 11. Efficiency vs Load Current
V(L1) V(L1)
VO(POS) VO(POS)
VO(NEG) VO(NEG)
I(L1)
I(L1)
IO = 10 mA IO = 80 mA
Figure 12. Operation at Light Load Current (DCM) Figure 13. Operation at High Load Current (CCM)
VI VI
VO(POS) VO(POS)
VO(NEG) VO(NEG)
Figure 14. Line Transient Response Figure 15. Line Transient Response
VI V(EN)
VO(NEG) VO(NEG)
VO(POS) VO(POS)
I(IN)
I(IN)
IO = 0 mA IO = 0 mA
Figure 16. Start Up (VI Rising) Figure 17. Start Up (V(EN) Rising)
VI
V(EN)
VO(NEG)
VO(NEG)
VO(POS)
VO(POS)
I(IN) I(IN)
IO = 0 mA IO = 0 mA
Figure 18. Shut Down – (VI Falling) Figure 19. Shut Down (V(EN) Falling)
VO(NEG) VO(NEG)
VO(POS) VO(POS)
IO
IO
IO = 10 mA, 50 mA IO = 20 mA, 80 mA
Figure 20. Load Transient Response Figure 21. Load Transient Response
5.25 −4.75
5.20 −4.80
5.15 −4.85
Output Voltage (V)
Figure 22. Positive Output Load Regulation Figure 23. Negative Output Load Regulation
2M 30m
IO = 0 mA
IO = 1 mA
25m
1.6M IO = 2 mA
IO = 3 mA
20m
1.2M IO = 5 mA
15m
800k
10m
VI = 2.5 V
400k VI = 3.1 V
5m
VI = 3.7 V
VI = 4.6 V
0 0
0 10m 20m 30m 40m 50m 60m 70m 80m 90m 100m 2.5 3 3.5 4 4.5 5 5.5
Output Current (A) G000
Input Voltage (V) G000
Figure 24. Switching Frequency vs Load Current Figure 25. Input Current vs Input Voltage
Not allowed
90 Area
80
70
IO(NEG) (mA)
60
50
40
30
20
Not allowed
10
Area
0
0 10 20 30 40 50 60 70 80 90 100
IO(POS) (mA)
10 Layout
L1
C1
E
VI
L1
L1
L2
L2
D F
C3
16
15
14
13
F
VIN 1 12 PGND
OUTN 2 11 PGND
VO(NEG) C2
OUTN 3 10 OUTP
A D VO(POS)
C VAUX 4 9 OUTP
5
8
GND
FBG
FB
EN
C4
B B
R2 R1
R3
A Multiple vias used to connect thermal pad to copper pour on bottom or inner layer to conduct heat away and minimize loop area.
B Output voltages sensed directly at output capacitors. Sensing traces kept separate from high-current-carrying traces.
C C4 placed close to VAUX and GND pins. Traces connecting to C4 do not need to be especially wide, because they do not conduct high current.
D C2 and C3 placed close to OUTP and OUTN pins and connected with wide traces to minimize parasitic inductance.
E C1 placed close to VIN pin and connected with very wide traces to minimize parasitic inductance.
F PGND connected to copper pour ground plane on bottom or inner layer to minimize loop area.
11.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
www.ti.com 3-Jun-2022
B0 W
Reel
Diameter
Cavity A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
W Overall width of the carrier tape
P1 Pitch between successive cavity centers
Sprocket Holes
Q1 Q2 Q1 Q2
Pocket Quadrants
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 3-Jun-2022
Width (mm)
H
W
Pack Materials-Page 2
GENERIC PACKAGE VIEW
RTE 16 WQFN - 0.8 mm max height
3 x 3, 0.5 mm pitch PLASTIC QUAD FLATPACK - NO LEAD
This image is a representation of the package family, actual package may vary.
Refer to the product data sheet for package details.
4225944/A
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PACKAGE OUTLINE
RTE0016C SCALE 3.600
WQFN - 0.8 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
3.1 B
A
2.9
SIDE WALL
METAL THICKNESS
DIM A
OPTION 1 OPTION 2
0.1 0.2
C
0.8 MAX
SEATING PLANE
0.05
0.00 0.08
4X 17 SYMM
1.5
1
12
0.30
16X
0.18
PIN 1 ID 16 13 0.1 C A B
(OPTIONAL) SYMM
0.05
0.5
16X
0.3
4219117/B 04/2022
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
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EXAMPLE BOARD LAYOUT
RTE0016C WQFN - 0.8 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
( 1.68)
SYMM
16 13
16X (0.6)
1
12
16X (0.24)
17 SYMM
(2.8)
(0.58)
TYP
12X (0.5)
9
4
( 0.2) TYP
VIA
5 8
(R0.05) (0.58) TYP
ALL PAD CORNERS
(2.8)
SOLDER MASK
METAL OPENING
EXPOSED EXPOSED
SOLDER MASK METAL METAL UNDER
METAL
OPENING SOLDER MASK
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
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EXAMPLE STENCIL DESIGN
RTE0016C WQFN - 0.8 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
( 1.55)
16 13
16X (0.6)
1
12
16X (0.24)
17 SYMM
(2.8)
12X (0.5)
9
4
METAL
ALL AROUND
5 8
SYMM
(R0.05) TYP
(2.8)
4219117/B 04/2022
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
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