FMMT415 SOT23 NPN SILICON PLANAR FMMT415

FMMT417 AVALANCHE TRANSISTOR FMMT417

ISSUE 4 - OCTOBER 1995 ✪
TYPICAL CHARACTERISTICS FEATURES
* Specifically designed for Avalanche mode operation
* 60A Peak Avalanche Current (Pulse width=20ns) E
C
180 40 APPLICATIONS
1. >4x1011Operations Without Failure
160 2. 107 Operations To Failure * Laser LED drivers
3. 103 Operations To Failure
140 30 VC = 250V * Fast edge generation B
120
- (A)

- (A)
* High speed pulse generators
100 PARTMARKING DETAIL – FMMT415 – 415
3. 20
80
2. VC = 200V FMMT417 – 417
I

I
60 SOT23
40 10 ABSOLUTE MAXIMUM RATINGS.
1.
20 PARAMETER SYMBOL FMMT415 FMMT417 UNIT
0
0 20 40 60 80 100 120 140 160 180
0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180 Collector-Base Voltage VCBO 260 320 V
Pulse Width (ns) Temperature (°C) Collector-Emitter Voltage VCEO 100 100 V
Maximum Avalanche Current IUSB v Temperature Emitter-Base Voltage VEBO 6 V
v Pulse Width for the specified conditions
Continuous Collector Current IC 500 mA

100
Peak Collector Current (Pulse Width=20ns) ICM 60 A
220
Power Dissipation Ptot 330 mW
80 200
VCE =10V Risetime of Base Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
Drive Current = 5mA/ns
175°C 180
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
- (V)

60
160
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
h

40 25°C
V

140
IB =50mA
Collector-Base FMMT415 V(BR)CES 260 V IC=1mA
20
Breakdown Tamb= -55 to +150°C
-55°C 120 IB =100mA Voltage FMMT417 320 V IC=1mA
IB =200mA
0 100 Collector-Emitter Breakdown VCEO(sus) 100 V IC=100µA
100µA 1mA 10mA 100mA 1A 100p 1n 10n 100n
Voltage
Collector Current Collector-Emitter Capacitance (F) Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE=10µA
Minimum starting voltage
hFE v IC as a function of capacitance Collector Cut-Off Current ICBO 0.1 µA VCB=180V
10 µA VCB=180V,
Tamb=100°C
180 160 Emitter Cut-Off Current IEBO 0.1 µA VEB=4V
175 Collector-Emitter Saturation VCE(sat) 0.5 V IC=10mA, IB=1mA*
IB =60mA
150
Voltage
170
IB =100mA
Base-Emitter VBE(sat) 0.9 V IC=10mA, IB=1mA*
- (V)

165 Saturation Voltage

- (V)

IB =200mA 140
160 Current in Second Breakdown ISB 15 A VC=200V, CCE=620pF
C = 620pF (Pulsed) 25 A VC=250V, CCE=620pF
V

155
V

120
C=620pF Static Forward Current Transfer hFE 25 IC=10mA, VCE=10V*
150
Ratio
145 100 Transition Frequency fT 40 MHz IC=10mA, VCE=20V
1 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
f=20MHz
Risetime of Base Drive (mA/ns) Temperature (°C)
Collector-Base Capacitance Ccb 8 pF VCB=20V, IE=0
Minimum starting voltage Minimum starting voltage f=100MHz
as a function of drive current as a function of temperature
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3 - 105 3 - 104
This datasheet has been downloaded from http://www.digchip.com at this page
 FMMT415 SOT23 NPN SILICON PLANAR FMMT415
FMMT417 AVALANCHE TRANSISTOR FMMT417
ISSUE 4 - OCTOBER 1995 ✪
TYPICAL CHARACTERISTICS FEATURES
* Specifically designed for Avalanche mode operation
* 60A Peak Avalanche Current (Pulse width=20ns) E
C
180 40 APPLICATIONS
1. >4x1011Operations Without Failure
160 2. 107 Operations To Failure * Laser LED drivers
3. 103 Operations To Failure
140 30 VC = 250V * Fast edge generation B
120
- (A)

- (A)
* High speed pulse generators
100 PARTMARKING DETAIL – FMMT415 – 415
3. 20
80
2. VC = 200V FMMT417 – 417
I

I
60 SOT23
40 10 ABSOLUTE MAXIMUM RATINGS.
1.
20 PARAMETER SYMBOL FMMT415 FMMT417 UNIT
0
0 20 40 60 80 100 120 140 160 180
0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180 Collector-Base Voltage VCBO 260 320 V
Pulse Width (ns) Temperature (°C) Collector-Emitter Voltage VCEO 100 100 V
Maximum Avalanche Current IUSB v Temperature Emitter-Base Voltage VEBO 6 V
v Pulse Width for the specified conditions
Continuous Collector Current IC 500 mA

100
Peak Collector Current (Pulse Width=20ns) ICM 60 A
220
Power Dissipation Ptot 330 mW
80 200
VCE =10V Risetime of Base Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
Drive Current = 5mA/ns
175°C 180
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
- (V)

60
160
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
h

40 25°C
V

140
IB =50mA
Collector-Base FMMT415 V(BR)CES 260 V IC=1mA
20
Breakdown Tamb= -55 to +150°C
-55°C 120 IB =100mA Voltage FMMT417 320 V IC=1mA
IB =200mA
0 100 Collector-Emitter Breakdown VCEO(sus) 100 V IC=100µA
100µA 1mA 10mA 100mA 1A 100p 1n 10n 100n
Voltage
Collector Current Collector-Emitter Capacitance (F) Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE=10µA
Minimum starting voltage
hFE v IC as a function of capacitance Collector Cut-Off Current ICBO 0.1 µA VCB=180V
10 µA VCB=180V,
Tamb=100°C
180 160 Emitter Cut-Off Current IEBO 0.1 µA VEB=4V
175 Collector-Emitter Saturation VCE(sat) 0.5 V IC=10mA, IB=1mA*
IB =60mA
150
Voltage
170
IB =100mA
Base-Emitter VBE(sat) 0.9 V IC=10mA, IB=1mA*
- (V)

165 Saturation Voltage

- (V)

IB =200mA 140
160 Current in Second Breakdown ISB 15 A VC=200V, CCE=620pF
C = 620pF (Pulsed) 25 A VC=250V, CCE=620pF
V

155
V

120
C=620pF Static Forward Current Transfer hFE 25 IC=10mA, VCE=10V*
150
Ratio
145 100 Transition Frequency fT 40 MHz IC=10mA, VCE=20V
1 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
f=20MHz
Risetime of Base Drive (mA/ns) Temperature (°C)
Collector-Base Capacitance Ccb 8 pF VCB=20V, IE=0
Minimum starting voltage Minimum starting voltage f=100MHz
as a function of drive current as a function of temperature
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3 - 105 3 - 104