SMD Type MOSFET

N-Channel MOSFET
AO4406A (KO4406A)

SOP-8
■ Features
● VDS (V) = 30V
● ID = 13 A (VGS = 10V)
● RDS(ON) ＜ 11.5mΩ (VGS = 10V) 1.50 0.15
● RDS(ON) ＜ 15.5mΩ (VGS = 4.5V)

+0.04
0.21 -0.02
1 Source 5 Drain
2 Source 6 Drain
3 Source 7 Drain
D 4 Gate 8 Drain

■ Absolute Maximum Ratings Ta = 25℃

Parameter Symbol Rating Unit

Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS ±20
TA=25℃ 13
Continuous Drain Current ID
TA=70℃ 10.4
A
Pulsed Drain Current IDM 100
Avalanche Current IAS 22
Avalanche energy L=0.1mH EAS 24 mJ
TA=25℃ 3.1
Power Dissipation PD W
TA=70℃ 2
t ≤ 10s 40
Thermal Resistance.Junction- to-Ambient RthJA
Steady-State 75 ℃/W
Thermal Resistance.Junction- to-Lead RthJL 24
Junction Temperature TJ 150
℃
Storage Temperature Range Tstg -55 to 150

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 SMD Type MOSFET

N-Channel MOSFET
AO4406A (KO4406A)
■ Electrical Characteristics Ta = 25℃
Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage VDSS ID=250 uA, VGS=0V 30 V
VDS=30V, VGS=0V 1
Zero Gate Voltage Drain Current IDSS uA
VDS=30V, VGS=0V, TJ=55℃ 5
Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ±100 nA
Gate Threshold Voltage VGS(th) VDS=VGS , ID=250uA 1.5 2.5 V
VGS=10V, ID=12A 11.5
Static Drain-Source On-Resistance RDS(On) VGS=10V, ID=12A TJ=125℃ 17 mΩ
VGS=4.5V, ID=10A 15.5
On State Drain Current ID(ON) VGS=10V, VDS=5V 100 A
Forward Transconductance gFS VDS=5V, ID=12A 45 S
Input Capacitance Ciss 610 910
Output Capacitance Coss VGS=0V, VDS=15V, f=1MHz 88 160 pF
Reverse Transfer Capacitance Crss 40 100
Gate Resistance Rg VGS=0V, VDS=0V, f=1MHz 0.8 2.4 Ω
Total Gate Charge (10V) 11 17
Qg
Total Gate Charge (4.5V) 5 8
VGS=10V, VDS=15V, ID=12A nC
Gate Source Charge Qgs 1.9 2.9
Gate Drain Charge Qgd 1.8 4.2
Turn-On DelayTime td(on) 4.4
Turn-On Rise Time tr VGS=10V, VDS=15V, RL=1.25Ω, 9
Turn-Off DelayTime td(off) RGEN=3Ω 17 ns
Turn-Off Fall Time tf 6
Body Diode Reverse Recovery Time trr 5.6 8
IF= 12A, dI/dt= 500A/us
Body Diode Reverse Recovery Charge Qrr 6.4 9.6 nC
Maximum Body-Diode Continuous Current IS 4 A
Diode Forward Voltage VSD IS=1A,VGS=0V 1 V

Note : The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max.

■ Marking
4406A
Marking
KC****

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SMD Type MOSFET

N-Channel MOSFET
AO4406A (KO4406A)
■ Typical Characterisitics
100 30
10V 6V VDS=5V
5V
80 25
7V

4.5V 20
60
ID (A)

ID(A)
15
4V
40
10 125°C
3.5V
20 5 25°C

VGS=3V
0 0
0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

18 1.8
Normalized On-Resistance

16
1.6 VGS=10V
VGS=4.5V ID=12A
14
Ω)
RDS(ON) (mΩ

1.4
12
1.2
10
VGS=4.5V
10
VGS=10V ID=10A
1
8

6 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage (Note E) Figure 4: On-Resistance vs. Junction Temperature
(Note E)

30 1.0E+02
ID=12A
25 1.0E+01

1.0E+00
20
125°C
Ω)
RDS(ON) (mΩ

1.0E-01 125°C
IS (A)

15
1.0E-02
10
1.0E-03 25°C
25°C
5 1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 SMD Type MOSFET

N-Channel MOSFET
AO4406A (KO4406A)
■ Typical Characterisitics
10 1200
VDS=15V
ID=12A
1000
8
Ciss

Capacitance (pF)
800
6
VGS (Volts)

600
4
400
Coss
2
200

Crss
0 0
0 3 6 9 12 15 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100 1000.0
TA=25°C
IAR (A) Peak Avalanche Current

TA=100°C
100.0
10µs
TA=150°C RDS(ON)
10.0 limited 100µs
ID (Amps)

10
1.0 1ms
TA=125°C
10ms
100ms
TJ(Max)=150°C 10s
0.1
TA=25°C
DC
0.0
1
0.01 0.1 1 10 100
1 10 100 1000
Time in avalanche, tA (µ
µs).
VDS (Volts)
Figure 9: Single Pulse Avalanche capability (Note C) Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)

1000
TA=25°C

100
Power (W)

10

1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)

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SMD Type MOSFET

N-Channel MOSFET
AO4406A (KO4406A)
■ Typical Characterisitics

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient
Thermal Resistance

1 RθJA=75°C/W

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)

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