SMD Type MOSFET

N-Channel MOSFET
AO4704 (KO4704)

SOP-8 Unit:mm
■ Features
● VDS (V) = 30V
● ID = 13 A (VGS = 10V)
● RDS(ON) ＜ 11.5mΩ (VGS = 10V)
1.50 0.15
● RDS(ON) ＜ 13mΩ (VGS = 4.5V)

+0.04
0.21 -0.02
● VDS (V) = 30V, IF = 3A, VF<0.5V@1A
1 S/A 8 D/K
2 S/A 7 D/K
3 S/A 6 D/K
4G 5 D/K

D K

G
S A

■ Absolute Maximum Ratings Ta = 25℃

Parameter Symbol MOSFET Schottky Unit
Drain-Source Voltage VDS 30
Gate-Source Voltage VGS ±12 V
Schottky Reverse Voltage VKA 30
TA=25℃ 13
Continuous Drain Current ID
TA=70℃ 10.4
Pulsed Drain Current IDM 40
A
TA=25℃ 4.4
Continuous Forward Current IF
TA=70℃ 3.2
Pulsed Diode Forward Current IFM 30
TA=25℃ 3.1
Power Dissipation PD W
TA=70℃ 2
t ≤ 10s 40
Thermal Resistance.Junction- to-Ambient RthJA
Steady-State 75 ℃/W
Thermal Resistance.Junction- to-Lead RthJL 30
Junction Temperature TJ 150
℃
Storage Temperature Range Tstg -55 to 150

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 SMD Type MOSFET

N-Channel MOSFET
AO4704 (KO4704)
■ Electrical Characteristics Ta = 25℃
Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 30 V
VDS=30V, VGS=0V 0.05
Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=0V, TJ=125℃ 10 mA
VDS=30V, VGS=0V, TJ=150℃ 20
Gate-Body Leakage Current IGSS VDS=0V, VGS=±12V ±100 nA
Gate Threshold Voltage VGS(th) VDS=VGS , ID=250μA 0.6 2 V
VGS=10V, ID=13A 11.5
Static Drain-Source On-Resistance RDS(On) VGS=10V, ID=13A TJ=125℃ 16.5 mΩ
VGS=4.5V, ID=12.2A 13
On State Drain Current ID(ON) VGS=4.5V, VDS=5V 40 A
Forward Transconductance gFS VDS=5V, ID=13A 30 37 S
Input Capacitance Ciss 3656 4050
Output Capacitance Coss VGS=0V, VDS=15V, f=1MHz 322 pF
Reverse Transfer Capacitance Crss 168
Gate Resistance Rg VGS=0V, VDS=0V, f=1MHz 0.86 1.1 Ω
Total Gate Charge (4.5V) Qg 30.5 36
Gate Source Charge Qgs VGS=10V, VDS=15V, ID=13A 4.6 nC
Gate Drain Charge Qgd 8.6
Turn-On DelayTime td(on) 6.2 9
Turn-On Rise Time tr VGS=10V, VDS=15V, RL=1.1Ω, 4.8 7
Turn-Off DelayTime td(off) RGEN=0Ω 55 75 ns
Turn-Off Fall Time tf 7.3 11
Body Diode+Schottky Reverse Recovery Time trr 20.3 25
IF= 13A, dI/dt= 100A/us
Body Diode+Schottky Reverse Recovery Charge Qrr 8.4 12.5 nC
Body-Diode + Schottky Continuous Current IS 5 A
Diode + Schottky Forward Voltage VSD IS=1A,VGS=0V 0.5 V

Note.The static characteristics in Figures 1 to 6 are obtained using 300 μs pulses, duty cycle 0.5% max.

■ Marking
4704
Marking
KC****

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SMD Type MOSFET

N-Channel MOSFET
AO4704 (KO4704)
■ Typical Characterisitics
60 30
VGS=5V
50 VGS =2.5V 25

40 20
ID(A)

125°C

ID(A)
30 15

20 10
VGS =2.0V 25°C
10 5

0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS(Volts) VGS(Volts)
Figure 1: On-Regions Characteristics Figure 2: Transfer Characteristics

13 1.8
ID=13A
12
Normalize ON-Resistance

1.6
VGS =4.5V
11 VGS=4.5V
RDS(ON)(mΩ)

1.4
10
VGS=10V
9 1.2
VGS =10V
8
1.0
7
0 5 10 15 20 25 30 0.8
ID(A) 0 25 50 75 100 125 150 175
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage Figure 4: On-Resistance vs. Junction Temperature

30 1E+01

ID=13A
25
1E+00
125°C
20
RDS(ON)(mΩ)

125°C
IS(A)

1E-01
15 25°C

10 1E-02
25°C
5 FET+SCHOTTKY
1E-03
0 0.0 0.2 0.4 0.6 0.8 1.0
0 2 4 6 8 10 VSD(Volts)
VGS(Volts) Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage (Note F)

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 SMD Type MOSFET

N-Channel MOSFET
AO4704 (KO4704)
■ Typical Characterisitics

5 10000
V DS =15V
C iss
4 ID =13A

Capacitance (pF)
VGS(Volts)

3
1000
2 C oss FET+SCHOTTKY

1
C rss
0 100
0 10 20 30 40 0 5 10 15 20 25 30
Qg (nC) VDS(Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100 50
10µs
R DS(ON)
limited 100 µs 40

10 10m s 1m s
Power (W)

30
ID(A)

0.1s
1s
20
1 10s

T J(Max) =150°C 10
DC
T A =25°C
0.1 0
0.1 1 10 100 0.01 0.1 1 10 100 1000
.
VDS(Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Operating Figure 10: Single Pulse Power Rating Junction-to-
Area (Note E) Ambient (Note E)

10
D=T on /T
T J,PK =T A +P DM .ZθJA .RθJA In descending order
Zθ JA Normalized Transient

R θJA =40°C/W D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Thermal Resistance

PD
0.1
T on
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (S)
Figure 11: Normalized Maximum Transient Thermal Impedence

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