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Nano-Sized Polycrystalline Bismuth Silicon Oxide Powder by Sol-Gel Technique
Nano-Sized Polycrystalline Bismuth Silicon Oxide Powder by Sol-Gel Technique
DOI 10.1007/s10971-010-2311-9
ORIGINAL PAPER
Received: 19 February 2010 / Accepted: 16 August 2010 / Published online: 31 August 2010
Ó Springer Science+Business Media, LLC 2010
Abstract Bismuth silicon oxide (Bi12SiO20, BSO) nano with the increase in sintering temperature. Self-trapped
crystalline powder was prepared by sol–gel technique using excitons could be responsible for this emission.
bismuth nitrate and tetraethyl orthosilicate as starting
materials. The prepared samples were sintered at various Keywords Bismuth silicon oxide BSO
temperatures (750 °C maximum) and characteristic sillenite Nano-crystallites Nano-powder Sol–gel
single cubic phase with crystallite size *38 nm (calculated
from room temperature powder XRD measurements) was
realized at 750 °C sintering temperature. SEM analysis 1 Introduction
showed that the powder contains the nano-sized particles
with almost spherical morphology. The observed frequen- Bismuth silicon oxide (Bi12SiO20, BSO) with the sillenite
cies in room temperature FTIR spectrum could be assigned structure Bi12MO20 (M = Si, Ge, Ti), has unique combi-
to Bi–O, Si–O and Bi–O–Si bonds. The FWHM (full width nation of electric and optical properties [1] making it quite
at half maximum) of the diffraction peaks decreased while useful in a number of technologically important applica-
the intensity of FTIR absorption lines increased with the tions such as spatial light modulators [2], optical image
increase in the sintering temperature indicating better bond converter [3] optical data processing [4], holographic
formation and crystallization. The thermograph of the recording medium [5] and so on. Most of these applications
samples recorded in the temperature range 50–1,000 °C are based on the single crystals of BSO which can be
showed almost no weight loss after *575 °C further con- grown by well-known techniques [6–12]. Alternately, thin
firmed the conclusion arrived at from XRD and FTIR films or polycrystalline powders of adequate density and
analysis. The samples sintered at 750 °C showed about 50% transparency could be used in some of these applications
absorbance in 400–600 nm region which was consistent and many reports on this aspect have been published
with the pale yellow color of the sample. Broad blue recently. Thin films prepared by sputtering [13], epitaxial
emission centered *478 nm was observed when excited by growth [14], pulsed laser deposition [15] and sol–gel
350 nm radiation from a Xe-lamp. The intensity of this technique [16, 17] have been investigated. Parallely, sev-
broad emission band increased while its FWHM decreased eral studies on the preparation and characterization of
powder BSO have been reported in the literature. Sule-
imenova et al. [18] used thermal technique DSC to inves-
tigate the process of Bi12MO20 formation from oxides
while Chehab et al. [19] investigated the pathways of
B. Lal S. K. Patro S. Singh
Centre for Laser Technology, Indian Institute of Technology sillenite-phase formation by high temperature X-ray dif-
Kanpur, Kanpur 208016, India fractometery. Vasconcelos et al. [20] prepared BSO pow-
der by mechanical alloying while Carrasco et al. [21]
B. Lal (&)
investigated the intermediate phase formation in ball
Department of Physics, Lovely Professional University,
Phagwara 144402, India milling synthesis. The dielectric properties of BSO powder
e-mail: bansi@iitk.ac.in prepared by solid state reaction was investigated by Valant
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J Sol-Gel Sci Technol (2010) 56:340–344 341
2 Experimental
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342 J Sol-Gel Sci Technol (2010) 56:340–344
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J Sol-Gel Sci Technol (2010) 56:340–344 343
Fig. 4 Room temperature FTIR spectra of the BSO samples sintered Fig. 5 Typical thermo-gram of the BSO powder
at 300 °C (dashed lines) and 750 °C (solid lines)
3,465 OH stretch
2,952 C–H stretch
2,878 C–H stretch
1,046 Si–O–Si stretching
960 (SiO4)-4 stretching vibration modes
825 Si–O bending
600 Bi–O vibration
548 Bi–O–Si stretching
454 Si–O out of plane bending
The TG measurements carried out in the temperature range 3.4 Optical absorption and emission
50–1,000 °C (Fig. 5) showed slow weight loss (*3%) in
the temperature range 100–200 °C, *20% weight loss Optical absorbance (200–600 nm region) measured at
from 200 to 300 °C, very little loss (*1%) from 300 to room temperature of the BSO powder sample sintered at
*550 °C while there is almost no weight loss in 750 °C is shown in Fig. 6. As seen in this figure maximum
550–1,000 °C temperature range. The initial slow weight absorbance (1.4/cm, *5% transmission)) was observed
loss could be due to evaporation of water and other organic around 276 nm which started decreasing rapidly from
material while the relatively rapid weight loss in the tem- 300 nm, reached a value of *0.4 (*40% transmission) at
perature range 200–300 °C could be due to decomposition 400 nm and *0.3 (*30% transmission) at 500 nm; this
of the hydroxides of bismuth and silicon. On the other absorption in 400–600 nm was consistent with the pale
hand, the slow weight loss observed from *300 to yellow color of the powder sintered at 750 °C.
*550 °C could be due to decomposition of the residual Room temperature photoluminescence spectra (400–
nitrate of bismuth as well as sublimation of the bismuth 650 nm region) excited with 350 nm radiation from a Xe
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344 J Sol-Gel Sci Technol (2010) 56:340–344
References
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