THE UNI-JUNCTION TRANSISTORS (UJT)

I.OBJECTIVE

1. To demonstrate a practical go/no method of testing a UJT with an

ohmmeter
2. To show a practical method for finding Vp and VV and for determining
the intrinsic standoff ratio (ŋ) of UJT.

INTRODUCTION

The PN junction of the UJT can be tested with ohmmeter similar to

testing diodes and bipolar transistors. With the negative lead placed on the
emitter and emitter and the positive lead placed at either, the junction is
reversed biased and the resistance should high or infinite. When the positive
lead is placed at either placed at either base, the junction is forward biased
and the resistance should be low. There should be a resistance reading of
several thousand ohms when the meter placed across the base leads.

The VP or the firing point of UJT can be found by connecting a

voltmeter to the emitter as shown 7.1a. The voltage in the emitter is slowly
increased by adjusting Re. When the UJT fires, the voltmeter reading will
decrease rapidly to the minimum value of Vv. This procedure may be required
several times to obtain as accurate a reading as possible. Before firing, IE
should be zero, but after firing, Ic should increase significantly. Resistor R S is
used to limit the current through the emitter, in case Re is adjusted too
closed + VBB resistor R2 and the UJT form a resistive voltage divider, with V B2
being slightly less than Vbb before firing. After firing the resistance of the
UJT decreases and the voltage drop across it, VB2 alos decreases.

Since the voltage is proportional to resistance, the intrinsic standoff

ratio can be found by the formula

V p −V D
ŋ= where V D= 0.7 V
VB
II. MATERIALS NEEDED

1 Fixed + 12 V power supply

1 Standard or digital voltmeter

1 Standard or digital ammeter

1 2N2646 UJT or equivalent

1 220 Ω resistor at 0.5 W (R2)

1 1-k Ω resistor at 0.5 W (RS)

1 10-k Ω resistor at 0.5 W (RS)

Connecting Wires

Industrial Electronics Trainer

III. PROCEDURE

I.TESTING UJT

PART 1

1. Set the ohmmeter to the midrange scale. (Based on module)

2. Refer to the figure 6.1a to connect the ohmmeter to the UJT properly
for each lead and record the readings in the indicated ohmmeter
circles.
3. Refer to figure 6.1b to connect the ohmmeter circles
FILL- IN QUESTIONS:

1. A forward-biased PN junction should have _________________ resistance

2. A reversed-biased PN junction should have _________________ resistance
3. A forward biased PN junction with a high ohmmeter reading indicates
that UJT is _________________.
4. A reversed biased PN junction with a low ohmmeter reading indicates
that UJT is _________________.
5. The resistance of a UJT from a base to base reads the same regardless
of the _________________ of the ohmmeter leads.

2. FINDING THE VP’s, VV’s AND ŋ OF A UJT

 Condition IE VE VB2 VP
Before firing
After firing

V p −V D V p −0.7
ŋ= = ŋ= = __________
VB 12

(b) data table and formula

PART 2:

1. Construct the circuit shown in figure 6.2a

2. Adjust RE until VE reads 0 V
 3. Measure VB2 and record in the place in the date table figure 6.2b
labeled “Before firing”.
4. Measure IE and record next to VB2 in the same row.
5. Slowly adjust RE (with VE increasing) until the meter reading drops
suddenly. Record the reading as close as possible to the VP
before the UJT fires. Repeat this step a few times to obtain
accuracy
6. With the UJT fired, measure Vv and record in its proper place in
the data table(second row).
7. Measure VB2 and record next to Vv.
8. Measure IE and record next to VB2 in the row “After Firing”.
9. Using the value of VP from the table, calculate and record the
intrinsic stand-off ratio (ŋ) in figure 6.2b.

FILL-IN QUESTIONS:

1. The voltage on the emitter just before the UJT fires is called __________.
2. The voltage on the emitter just before the UJT fired is called __________.
3. Before the UJT fires IE is equal to __________.
4. After the UJT fire, IE __________.
5. When the UJT fires, VB2 __________.

V. OBSERVATION:

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VI. CONCLUSION:

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