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Defects 6 A
Defects 6 A
Defects
An ideal crystal can be described in terms
a three-dimensionally periodic
arrangement of points called lattice and an
atom or group of atoms associated with
each lattice point called motif:
Free surface:
a 2D defect
Vacancy: A point defect
Defects Dimensionality Examples
Point 0 Vacancy
Line 1 Dislocation
Fact
Surprising Fact
∆ H = n ∆ Ηf
Vacancy increases S of the crystal due to
configurational entropy
Configurational entropy due to vacancy
Number of atoms: N
Number of vacacies: n
Total number of sites: N+n
The number of microstates:
N+ n ( N + n)!
W= Cn =
n! N !
Increase in entropy S due to vacancies:
( N + n)!
∆ S = k ln W = k ln
n! N !
= k[ln( N + n)!− ln n!− ln N !]
Stirlings Approximation
ln N !≈ N ln N − N
N ln N! N ln N− N
1 0 −1
10 15.10 13.03
ln N ! ≈ N ln N − N
∆ S = k[( N + n) ln( N + n) − n ln n − N ln N ]
∆ H = n∆ H f
Change in G of a crystal due to
vacancy
∆G ∆H
∆ H = n∆ H f
G of a
perfect
crystal ∆G = ∆H − T∆S
neq
n
−T∆S
∆ S = k[( N + n) ln( N + n) − n ln n − N ln N ]
Equilibrium concentration of vacancy
∆ S = k[( N + n) ln( N + n) − n ln n − N ln N ]
∆ H = n∆ H f
∆ G = n∆ H f − Tk [( N + n) ln( N + n) − n ln n − N ln N ]
∂∆G
= 0
∂n n = neq
neq ∆Hf
= exp −
N kT
With neq<<N
neq ∆Hf
= exp −
N kT
Al: ∆Ηf= 0.70 ev/vacancy
Ni: ∆Hf=1.74 ev/vacancy
n/N 0K 300 K 900 K
Al 0 1.45x10−12 1.12x10−4
Ni 0 5.59x10−30 1.78x10-10
Contribution of vacancy to thermal expansion
Increase in vacancy concentration increases the volume
of a crystal
A vacancy adds a
volume equal to the
volume associated with
an atom to the volume
of the crystal
Contribution of vacancy to thermal expansion
Thermal expansion =
lattice parameter expansion
+
Increase in volume due to vacancy
Contribution of vacancy to thermal expansion
V=volume of crystal
V = Nv v= volume associated with
one atom
N=no. of sites
∆ V = N ∆ v+ V ∆ N (atoms+vacancy)
∆V ∆v ∆N
= +
V v N
Total Lattice vacancy
expansion parameter
increase
Experimental determination of n/N
∆V ∆v ∆N
= +
V v N
3∆ L 3∆ a n
= +
L a N
n ∆L ∆a
= 3 +
N L a
Lattice
Linear parameter as a
thermal function of
expansion temperature
coefficient
XRD
Point Defects
vacancy Interstitial
impurity
Substitutional
impurity
Defects in ionic solids
Frenkel
defect
Cation vacancy
+
cation interstitial
Schottky
defect
Cation vacancy
+
anion vacancy
Line Defects
Dislocations
Missing half plane A Defect
An extra half plane…
A line defect?
Or a planar
defect?
Extra half plane No extra plane!
Missing plane No missing plane!!!
An extra half plane…
Edge
Dislocation
de ve a
l w in en
n d t
ha e
e ec
fe a
t a ly e
ys p t l a n l y f
.
t e
ct
up ad
r t
cr ru p
b
a no
ab If a
o f i s
ole ne
w h pl a
e p l a n e
Th of t h e
s a
e d g e e d a
t h e si d e r c t
y n f e
Onl n b e c o d e
c a
1 2 3 4 5 6 7 8 9
1 2 3 4 5 6 7 8 9
1 2 3 4 5 6 7 8 9
1 2 3 4 5 6 7 8 9
Burgers vector
b Slip plane
slip no slip
1 2 3 4 5 6 7 8 9
Slip plane
slip no slip
Dislocation: slip/no
slip boundary
dislocation
b: Burgers vector
magnitude and
t direction of the slip
t: unit vector
b tangent to the
dislocation line
Dislocation Line:
A dislocation line is the boundary between
slip and no slip regions of a crystal
Burgers vector:
The magnitude and the direction of the
slip is represented by a vector b called the
Burgers vector,
Line vector
A unit vector t tangent to the dislocation
line is called a tangent vector or the line
vector.
1 2 3 4 5 6 7 8 9
Burgers vector
b Slip plane
slip t no slip
1 2 3 4 5 6 7 8 9
In general, there can be any angle
between the Burgers vector b (magnitude
and the direction of slip) and the line
vector t (unit vector tangent to the
dislocation line)
b ⊥ t ⇒ Edge dislocation
b t ⇒ Screw dislocation
b ⊥ t , b t ⇒ Mixed dislocation
i ne
nL
a tio
l o c
D is
r ew t
Sc
b || t
3
2
1
If b || t
Left-handed Right-handed
spiral ramp spiral ramp
Screw
Dislocation b parallel to t b antiparallel to t
Burgers vector
Johannes Martinus
BURGERS
4 ideal crystal 6
7
3
8
2
1 9
16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1
F b
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
9 S 1
2
8
3
7
Map the⊥ same 4
6
5
Burgers circuit on a 5
4 real crystal 6
7
3
8
2
1 9
16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1
RHFS convention
b is a lattice translation
Surface defect
16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1
Elastic strain field associated with an
edge dislocation
N+1 planes
Compression
Above the slip plane
Tension
Below the slip plane
N planes
Line energy of a dislocation
Elastic energy per unit length of a
dislocation line
1
E= µ b 2
2
µ Shear modulus of the crystal
b Length of the Burgers vector
Unit: J m−1
Energy of a dislocation line
is proportional to b2.
SC 〈100〉
1
BCC 〈111〉
2
1
FCC 〈110〉
2
1
DC 〈110〉
2
NaCl 1
〈110〉
2
CsCl 〈100〉
A dislocation line cannot end
abruptly inside a crystal
Dislocation:
dislocation
slip/no slip
boundary
slip no slip
b
A dislocation line cannot end
abruptly inside a crystal
F
A dislocation line cannot end
abruptly inside a crystal
T
Grain
Boundary
Grain 1 Grain 2
A dislocation loop The line vector
t is always
tangent to the
b t dislocation line
⊥
slip t b
b t
⊥
t b The Burgers
No slip vector b is
constant along a
dislocation line
Can a loop be Prismatic dislocation loop
entirely edge? Example 6.2
b
b
b2
t
t
b3
Node t
b2
b1 b3
b1
b1 + b2 + b3 = 0
A dislocation line cannot end
abruptly inside a crystal
It can end on
Free surfaces
Grain boundaries
τ
Glide of τcrss
an Edge
Dislocation
τcrss is
critical
resolved
shear stress
on the slip
plane in the
τcrss
direction of
Glide of τcrss
an Edge
Dislocation
τcrss is
critical
resolved
shear stress
on the slip
plane in the
τcrss
direction of
Glide of τcrss
an Edge
Dislocation
τcrss is
critical
resolved
shear stress
on the slip
plane in the
τcrss
direction of
Glide of τcrss
an Edge
Dislocation
τcrss is
critical
resolved
shear stress
on the slip
plane in the
τcrss
direction of
Glide of τcrss
an Edge
Dislocation
A surface
step of b
is created
if a Surface
dislocation
step, not a
sweeps
over the dislocation
entire slip
plane
τcrss
slip τ Dislocation no slip
motion
1 2
3
Climb of an edge dislocation
⊥
⊥
Climb of an edge dislocation
Vacancy Vacancy
concentration concentration
goes down goes up
From Callister
http://www.tf.uni-kiel.de/matwis/amat/def_en/index.html
Surface
Defects
Surface Defects
External Internal
Twin boundary
Interphase Different
phases
boundary
External surface: Free surface
Area A
Broken Area A
bonds
Grain 2
Grain 1
A grain boundary is a boundary between two
regions of identical crystal structure but
different orientation
Optical Microscopy,
Experiment 4
A⊥ b
= tan θ
h
Eqn. 6.7
A
Stacking fault
C A
B C
A B
C Stacking A
HCP
B fault B
A A
C C
B B
A A
FCC FCC
Twin Plane
C C
B A
A B
C C
B A
A B
Twin
C C
plane
B B
A A
C C
B B
A A
Callister Fig. 4.9
Edge Dislocation
⊥
432 atoms
55 x 38 x 15 cm3
Screw Dislocation
525 atoms
45 x 20 x 15 cm3
Screw Dislocation (another view)
A dislocation cannot end
abruptly inside a crystal
Burgers vector of a
dislocation is constant
A B
L Q
P
D C
R S
H E
Screw
dislocation
A B
S R
N b M
b
L Q
P
H
E
Edge dislocation
D C
⊥
477 atoms
55 x 30 x 8 cm3
R. Prasad
Dislocation Models for Classroom
Demonstrations
Conference on Perspectives in
Physical Metallurgy and Materials
Science
Indian Institute of Science, Bangalore
2001
MODELS OF DISLOCATIONS FOR
CLASSROOM***
R. Prasad
⊥
A Prismatic Dislocation Loop
685 atoms
38 x 38 x 12 cm3
Slip plane
Prismatic
Dislocation
loop
d c
a b