TRANSISTOR CHARACTERISTICS

Aim:-
1. TO STUDY COMMON BASE CHARACTERISTICS OF NPN TRANSISTOR
2. TO STUDY COMMON EMITTER CHARACTERISTICS OF A NPN TRANSISTOR
Common Base
INTRODUCTION:-
A transistor is a semiconductor device used to amplify or switch electronic signals and
electrical power. Transistors are one of the basic building blocks of modern electronics.
It is composed of semiconductor material usually with at least three terminals for
connection to an external circuit. A voltage or current applied to one pair of the
transistor's terminals controls the current through another pair of terminals. Because the
controlled (output) power can be higher than the controlling (input) power, a transistor
can amplify a signal. Today, some transistors are packaged individually, but many more
are found embedded in integrated circuits.

STRUCTURE OF TRANSISTOR:-
Transistor is a three layer semiconductor device consisting of either two n- and one p-
type layers of material or two p- and one n- type material. Former is called an NPN
transistor, while later is called a PNP transistor .Below Figure shows the symbol and
structure of NPN transistor.
 N-P-N Transistor
Generally the transistor has three terminals as shown in above figure. Emitter
(E), base (B), and collector(C), but we need four terminals for circuit connections,
two for input and another twofor output. So one terminal is used as a common
terminal for both input and output. Transistor configurations are of three types

Common Base configuration:-

In common base configuration, emitter is the input terminal, collector is the
output terminal and base terminal is connected as a common terminal for
both input and output. That means the emitter terminal and common base
terminal are known as input terminals whereas the collector terminal and
common base terminal are known as output terminals.
For normal operation, the emitter-base junction is forward biased and the
collector base junction is reverse biased. We apply input between base and
emitter terminal and measure the corresponding output signal between the
base and collector terminal when the base terminal is grounded.V EB and IE
are input parameters and VCB and IC are output parameters.
Input characteristics:-
The input characteristic is plotted between IE and VEB, keeping voltage VCB
constant. This characteristic is very similar to that of a forward- biased diode
as shown in the billow figure . First keep VCB constant and measure the
value of input current IE for different values of input voltage VEB. Repeat the
same process at different output voltages VCB.
Output characteristics:-
The output characteristics curves are plotted between IC and VCB, keeping IE
constant. These curves are almost horizontal. This shows that the output
dynamic resistance, defined below, is very high.

The collector current IC is less than, but almost equal to the emitter current.
The current IE divides into Ic and IB. That is,
Procedure:-
1. Make the circuit connection as shown in circuit diagram

2. For input characteristics, first fix the voltage VCB, say at 5V. Now vary the
voltage VEB slowly and note the current IE for each value of VEB. Note the
reading in the table as given below.

3. Repeat the above for another value of VCB, say 3V by varying the power
supply connected in the emitter circuit.

4. For output characteristics, first fix the collector voltage, say at 15V. Open
the input circuit. Note the collector current by using a micrometer. Vary the
collector voltage in steps and note collector current for each value of collector
voltage. This will give the curve for reverse saturation current. Now, close the
input circuit. Fix the input current constant IE say 4.62mA. Note current IC by
varying the collector voltage VCB. At each step note the reading in the table
whose format is given below.
Repeat this process for 2 to 3 different values of emitter current. Please make
sure that you do not exceed the maximum ratings of the transistor otherwise
the transistor can get damaged.
5. Plot the input and output characteristics by using the readings taken
above.
6. Select a suitable operating point within the active region. At this operating
point, draw a tangent to the curve of output characteristics. The slope of this
curve will give the output dynamic resistance. Similarly, drawing tangent to
the input characteristics curve gives the input dynamic resistance.

7. To determine αdc, simply divide dc collector current by dc emitter current.

8. To determine αac, draw a vertical line through the selected operating
point on the output characteristics. Take a small change in IE around the
operating point and read from the graph, the corresponding change in IC.
Divide the change in IC by the change in IE to get αac
INPUT CHARACTERISTICS

Readings of input Characteristics in NPN transistor(COMMON BASE )

Output Characteristics
Readings of Output Characteristics in NPN transistor(COMMON BASE )
X-Axis is represents VBE in Voltage
Y-Axis is represents IC in milliAmpere
Red Curve is for VCB = 10 V
Blue Curve is for VCB = 5 V
X-Axis represents VCB in Voltage
Y-Axis represents IC in milliAmpere
Red Curve is For IC at IE = 1.5 mA
Blue Curve is for IC at IE = 0.5 mA
PRECAUTIONS:-
1. Voltage applied between different leads should not exceed the
recommended value.
2. Overheating of transistors should be avoided.
3. Do not switch on the power supply unless you have checked the
circuit connections as per the circuit diagram.
COMMON EMITTER

Introduction:-
The common emitter (CE) configuration is the most widely used transistor
configuration. The common emitter (CE) amplifiers are used when large current gain is
needed. The input signal is applied between the base and emitter terminals while the
output signal is taken between the collector and emitter terminals.

THEORY:-

It is the most commonly used configuration among the three configurations. In this
configuration the output signal has a phase shift of 180°.
Input characteristics are in below figure
Output characteristics are in below figure:-

PROCEDURE:-
1. From the transistor module, identify the terminals of the transistor to make the circuit
on the circuit board.
2. Make the circuit connection as shown in the circuit diagram on the circuit board.
3. For input characteristics, first fix the voltage VCE, say at 5V. Now vary the voltage
VBE slowly and note the current IB for each step. Repeat the above procedure for other
values of VCE .
OBSERVATIONS:-
Input Characteristics
Output Characteristics
Now I am going to to plot graphs of above data

Y-Axis represents IB in MicroAmpere

X-Axis represents VBE in Voltage
Red Curve at VCE = 5 V
Blue Curve at VCE = 3 V
X-Axis Represents VCE in Volt
Y-Axis represents IC in MilliAmpere
Red Curve is at IB = 45.5 MicroAmpere
Red Curve is at IB = 21.3 MicroAmpere
Precautions:-

1. Voltage applied between different leads should not exceed the recommended value.
2. Overheating of transistors should be avoided.
3. Do not switch on the power supply unless you have checked the circuit connections
as per the circuit diagram.

Thank You