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EE 6203: Power Electronic System Design

End Semester Examination

Total Marks: 50
Time: 3 hrs

Instructions
1. Write your name and roll number at the top right of first page of your
answer sheet.
2. Answer all the questions.
3. If you have any doubts, make suitable assumptions, state them in the
answer paper and continue writing.

EE 6203: PESD End Semester: Jul-Nov 2021 EE, IITM

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Section A 14 Marks
1. How does a Power MOSFET achieve a higher switching frequency as (2)
compared to an IGBT?
2. What is the advantage of positive temperature coefficient of resistance (2)
in power devices? Given an example of a power device that has positive
temperature coefficient of resistance.
3. SiC has higher breakdown field strength and band gap than Si. What (2)
are the advantages that result from these two properties?
4. Explain the need for balancing resistors during series connection of elec- (2)
trolytic capacitors.
5. Name any four different types of magnetic cores used in power electronic (2)
applications.
6. Explain the need for soft turn-off of a device during short-circuit. (2)
7. What are the advantages and disadvantages of an electrolytic capacitor? (2)

Section B 36 Marks
8. Using a Power Diode as an example, explain with neat drawings how n− (6)
region helps in achieving a higher breakdown voltage in power devices.
9. Consider the electromagnetic circuit shown below. The duty ratio of (6)
currents in L1 and L2 each is 50%.
(A) Evaluate the number of turns (N2 ) of L2 .
(B) Sketch the core flux as a function of time.
(C) Assuming a peak saturation flux density of 1 T, evaluate Ac .
(D) Consider the safe rms current density for the conductor to be 3
A/mm2 . Evaluate the cross section of conductors to be used for
L1 and L2 .
(E) Assuming a window space utilisation factor of kw = 0.3, evaluate Aw .
(F) Evaluate the desired airgap to obtain the given inductances L1 and
L2 .

EE 6203: PESD End Semester: Jul-Nov 2021 EE, IITM

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An Electromagnetic Circuit

10. A power electronic capacitor is specified to have the following values. (6)
Capacitance = 10µF ;
ESR = 30mΩ;
ESL = 75nH;
Sketch the impedance of the capacitor as a function of frequency in the
dBΩ vs log ω. Determine the range of frequency for which the capacitor
may be idealized to be a pure capacitance of 10µF .
11. The below figure shows a single pole double throw power switching device (6)
and the current through the pole of the switch. The diode has an on state
drop of 1V . The MOSFET has an on state resistance of 0.3Ω.

A Compound Power Switching Device and the Pole Current

(A) Sketch I1 (t) and I2 (t).

(B) Evaluate the average and rms values of the currents I1 (t) and I2 (t).
(C) Evaluate the total conduction loss in the MOSFET and the diode.
12. A disc type Thyristor is shown below with its cooling arrangement. The (6)
device is operating with a steady power dissipation of 200W .

EE 6203: PESD End Semester: Jul-Nov 2021 EE, IITM

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Thermal Design

(A) Evaluate the steady state temperature rise of the junction.

(B) With the above steady power dissipation of 200W , find the excess
power dissipation allowable for 10ms, if the junction temperature
rise is not to exceed 90◦ C.
Rth,JC1 = 0.3◦ C/W ; Rth,JC2 = 0.3◦ C/W ; Rth,C1 H1 = 0.05◦ C/W ; Rth,C2 H2 =
0.05◦ C/W ; Rth,H1 A = 0.5◦ C/W ; Rth,H2 A = 0.4◦ C/W ; Zth (10ms) = 0.05◦ C/W .
13. Consider the single phase rectifier shown below. (6)

Single Phase Rectifier

(A) Sketch the input voltage vlg (ωt), output voltage vpn (ωt), positive ter-
minal voltage vpg (ωt) and negative terminal voltage vng (ωt).
(B) Express vpg (ωt) and vng (ωt) as a sum of differential mode and com-
mon mode components.
(C) Draw the common mode equivalent circuit of the rectifier. Assume
all devices to be mounted on to a grounded heatsink. Assume the
cathode of the diodes as the base plate (case).

EE 6203: PESD End Semester: Jul-Nov 2021 EE, IITM