Department- Research & Development

Document No. -0001

ELECTROPLATING OF COPPER ON MILD STEAL

 Composition
 Steps
 Mechanism

Date :- 21/2/2022

Prepared By :- NIDHI SHARMA

Checked By :-
Authorized By :-

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 Department- Research & Development
Document No. -0001

Mechanism of Copper Electroplating

Composition : - CuSO4.5H2O, H2SO4, Thiourea, SPS, MPS, PEG.

(1) Cu0 Cu2+ + 2e-

(2) Cu Cu+ + 2e-
(3) Cu+ Cu2+ + e-
(4) 2Cu2+ + 2TU NH2 NH 2
C-S-S-C + 2Cu + + 2H+
NH 2 NH 2

Cu+ + 2TU +SO42- S S

C Cu C

Cu (I) thiolate

Cu (I) thiolate + H+ + e- Cu + MPS

O O O
II II II
S S—S S + H + + e- SH S O -Na+
- -
II O Na+ II O Na+ II
O O O
SPS MPS

2MPS + Cu2+ [Cu (I) thiolate] -

[Cu (I) thiolate]- + H+ + e- Cu0 + MPS

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 Department- Research & Development
Document No. -0001

STEPS OF COPPER ELECTROPLATING PROCESS

The composition and condition of each step during electrolytic plating process .

Steps Composition Condition

Degreasing KOH (30 – 60 g/)l 80-900C, 6V, 3 – 15 min

Etching HNO3 10-15 % 80-900C, 30 min

Neutralization H2C2O4, 0.5 M 400C, 10 min

Sensitization SnCl2.2H2O, 0.1 %( 20g/l) 250C, 5 -10 min

HCl, 1ml of 1Vol %( 10g/l)

Activation PdCl2.2HCl, 0.1%, HCl 1ml) 250C. 5 – 10 min

Electrolytic Copper Plating CuSO4.5H2O (239.64g/l) 25 – 40 0C, 20 -30 min

(Metallization) H2SO4 (59.91 g/l) p H – 3.8 – 4.2

Thiourea (0.014g/l) Current Density – 30 – 100A/sq

PEG (0.1g/l)

SPS/MPS (0.01g/l)

Degreasing:- Alkaline cleaning Water rinse Acid picking Water Rinse

15—50 %HCl, RT

Sensitization:- SnCl2.2H2O Water Rinse

PdCl2.2H2O Water Rinse

Activation:-

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 Department- Research & Development
Document No. -0001