10-F106NIA150SA-M136F

flowNPC 1 600V/150A

Features flow1 housing

● Neutral-point-Clamped inverter
● Compact flow1 housing
● Low Inductance Layout

Target Applications Schematic

● UPS
● Motor Drive
● Solar inverters

Types

● 10-F106NIA150SA-M136F

Maximum Ratings
Tj=25°C, unless otherwise specified

Parameter Symbol Condition Value Unit

Buck IGBT

Collector-emitter break down voltage VCE 600 V

Th=80°C 109
DC collector current IC Tj=Tjmax A
Tc=80°C 144

Pulsed collector current ICpulse tp limited by Tjmax 450 A

Th=80°C 166
Power dissipation per IGBT Ptot Tj=Tjmax W
Tc=80°C 251

Gate-emitter peak voltage VGE ±20 V

tSC Tj≤150°C 6 µs
Short circuit ratings
VCC VGE=15V 360 V

Maximum Junction Temperature Tjmax 175 °C

Tj≤150°C
Turn off safe operating area 300 A
VCE<=VCES

Buck Diode

Peak Repetitive Reverse Voltage VRRM Tj=25°C 600 V

Th=80°C 62
DC forward current IF Tj=Tjmax A
Tc=80°C 82

Repetitive peak forward current IFRM tp limited by Tjmax Tc=100°C 450 A

Th=80°C 74
Power dissipation per Diode Ptot Tj=Tjmax W
Tc=80°C 112

Maximum Junction Temperature Tjmax 175 °C

Copyright by Vincotech 1 Revision: 5

 10-F106NIA150SA-M136F

Maximum Ratings
Tj=25°C, unless otherwise specified

Parameter Symbol Condition Value Unit

Boost IGBT

Collector-emitter break down voltage VCE 600 V

Th=80°C 100
DC collector current IC Tj=Tjmax A
Tc=80°C 134

Pulsed collector current ICpuls tp limited by Tjmax 450 A

Th=80°C 151
Power dissipation per IGBT Ptot Tj=Tjmax W
Tc=80°C 228

Gate-emitter peak voltage VGE ±20 V

tSC Tj≤150°C 6 µs
Short circuit ratings
VCC VGE=15V 360 V

Maximum Junction Temperature Tjmax 175 °C

Tj≤150°C
Turn off safe operating area 300 A
VCE<=VCES

Boost Inverse Diode

Peak Repetitive Reverse Voltage VRRM Tc=25°C 600 V

Th=80°C 91
DC forward current IF Tj=Tjmax A
Tc=80°C 121

Repetitive peak forward current IFRM tp limited by Tjmax 300 A

Th=80°C 123
Power dissipation per Diode Ptot Tj=Tjmax W
Tc=80°C 187

Maximum Junction Temperature Tjmax 175 °C

Boost Diode
Tj=25°C
Peak Repetitive Reverse Voltage VRRM 600 V

Th=80°C 98
DC forward current IF Tj=Tjmax A
Tc=80°C 129

Repetitive peak forward current IFRM tp limited by Tjmax 300 A

Th=80°C 135
Power dissipation per Diode Ptot Tj=Tjmax W
Tc=80°C 205

Maximum Junction Temperature Tjmax 175 °C

Thermal Properties

Storage temperature Tstg -40…+125 °C

Operation temperature under switching condition Top -40…+(Tjmax - 25) °C

Insulation Properties

Insulation voltage Vis t=2s DC voltage 4000 V

Creepage distance min 12,7 mm

Clearance min 12,7 mm

Copyright by Vincotech 2 Revision: 5

 10-F106NIA150SA-M136F

Characteristic Values

Parameter Symbol Conditions Value Unit

Vr [V] or IC [A] or
VGE [V] or
VCE [V] or IF [A] or Tj Min Typ Max
VGS [V]
VDS [V] ID [A]

Buck IGBT

VGE(th) Tj=25°C 5 5,8 6,5

Gate emitter threshold voltage VCE=VGE 0,0024 V
Tj=150°C
VCE(sat) Tj=25°C 1,05 1,57 1,85
Collector-emitter saturation voltage 15 150 V
Tj=150°C 1,73
ICES Tj=25°C 60
Collector-emitter cut-off current incl. Diode 0 600 µA
Tj=150°C
IGES Tj=25°C 1,4
Gate-emitter leakage current 20 0 µA
Tj=150°C
Integrated Gate resistor Rgint none Ω

td(on) Tj=25°C 161

Turn-on delay time
Tj=150°C 162
tr Tj=25°C 24
Rise time
Tj=150°C 28
ns
td(off) Tj=25°C 221
Turn-off delay time
Rgon=4 Ω Tj=150°C 249
±15 350 150
tf Rgoff=4 Ω Tj=25°C 82
Fall time
Tj=150°C 114
Eon Tj=25°C 1,01
Turn-on energy loss per pulse
Tj=150°C 1,75
mWs
Eoff Tj=25°C 4,10
Turn-off energy loss per pulse
Tj=150°C 5,92
Input capacitance Cies 9240

Output capacitance Coss f=1MHz 0 25 Tj=25°C 576 pF

Reverse transfer capacitance Crss 274

Gate charge QGate 15 480 150 Tj=25°C 940 nC

Thermal grease
Thermal resistance chip to heatsink per chip RthJH thickness≤50um 0,574 K/W
λ = 0,81 W/mK

Buck Diode

VF Tj=25°C 1,2 1,69 1,9

Diode forward voltage 150 V
Tj=150°C 1,75
IRRM Tj=25°C 150
Peak reverse recovery current A
Tj=150°C 178
trr Tj=25°C 119
Reverse recovery time ns
Tj=150°C 148
Tj=25°C 8,6
Reverse recovered charge Qrr Rgoff=4 Ω ±15 350 150 µC
Tj=150°C 13,7
di(rec)max Tj=25°C 4704
Peak rate of fall of recovery current A/µs
/dt Tj=150°C 3013
Tj=25°C 2,30
Reverse recovered energy Erec mWs
Tj=150°C 3,63
Thermal grease
Thermal resistance chip to heatsink per chip RthJH thickness≤50um 1,288 K/W
λ = 0,81 W/mK

Note: All characteristic values are related to gates of paralell IGBTs connected together

Copyright by Vincotech 3 Revision: 5

 10-F106NIA150SA-M136F

Characteristic Values

Parameter Symbol Conditions Value Unit

Vr [V] or IC [A] or
VGE [V] or
VCE [V] or IF [A] or Tj Min Typ Max
VGS [V]
VDS [V] ID [A]

Boost IGBT

VGE(th) VCE=VGE Tj=25°C 5 5,8 6,5

Gate emitter threshold voltage 0,0024 V
Tj=150°C
VCE(sat) Tj=25°C 1,05 1,57 1,85
Collector-emitter saturation voltage 15 150 V
Tj=150°C 1,73
ICES Tj=25°C 60
Collector-emitter cut-off incl diode 0 600 µA
Tj=150°C
IGES Tj=25°C 1,4
Gate-emitter leakage current 20 0 µA
Tj=150°C
Integrated Gate resistor Rgint none Ω

td(on) Tj=25°C 160

Turn-on delay time
Tj=150°C 159
tr Tj=25°C 27
Rise time
Tj=150°C 30
ns
td(off) Tj=25°C 224
Turn-off delay time
Rgoff=4 Ω Tj=150°C 248
±15 350 150
tf Rgon=4 Ω Tj=25°C 75
Fall time
Tj=150°C 99
Eon Tj=25°C 1,08
Turn-on energy loss per pulse
Tj=150°C 1,68
mWs
Eoff Tj=25°C 4,35
Turn-off energy loss per pulse
Tj=150°C 5,94
Input capacitance Cies 9240

Output capacitance Coss f=1MHz 0 25 Tj=25°C 576 pF

Reverse transfer capacitance Crss 274

Gate charge QGate 15 480 150 Tj=25°C 940 nC

Thermal grease
Thermal resistance chip to heatsink per chip RthJH thickness≤50um 0,630 K/W
λ = 0,81 W/mK

Boost Inverse Diode

Tj=25°C 1,2 1,68 1,9
Diode forward voltage VF 150 V
Tj=125°C 1,68
Thermal grease
Thermal resistance chip to heatsink per chip RthJH thickness≤50um 0,771 K/W
λ = 0,81 W/mK

Boost Diode

VF Tj=25°C 1,2 1,68 1,9

Diode forward voltage 150 V
Tj=150°C 1,68
Tj=25°C 60
Reverse leakage current Ir 600 µA
Tj=150°C
Tj=25°C 131
Peak reverse recovery current IRRM A
Tj=150°C 166
trr Tj=25°C 121
Reverse recovery time ns
Tj=150°C 151
Tj=25°C 7,6
Reverse recovered charge Qrr Rgon=4 Ω ±15 350 150 µC
Tj=150°C 14,4
di(rec)max Tj=25°C 3810
Peak rate of fall of recovery current A/µs
/dt Tj=150°C 1668
Erec Tj=25°C 2,20
Reverse recovery energy mWs
Tj=150°C 4,14
Thermal grease
Thermal resistance chip to heatsink per chip RthJH thickness≤50um 0,701 K/W
λ = 0,81 W/mK

Thermistor

Rated resistance R T=25°C 22000 Ω

Deviation of R100 ∆R/R R100=1486 Ω T=100°C -5 5 %

Power dissipation P T=25°C 200 mW

Power dissipation constant T=25°C 2 mW/K

B-value B(25/50) Tol. ±3% T=25°C 3950 K

B-value B(25/100) Tol. ±3% T=25°C 3996 K

Vincotech NTC Reference B

Copyright by Vincotech 4 Revision: 5

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Buck

Figure 1 IGBT Figure 2 IGBT

Typical output characteristics Typical output characteristics
IC = f(VCE) IC = f(VCE)
400 10-F106NIA150SA-M136F 400

IC (A)
IC (A)

300 300

200 200

100 100

0 0
0 1 2 3 4 5 0 1 2 3 4 5
V CE (V) V CE (V)

At At
tp = 250 µs tp = 250 µs
Tj = 25 °C Tj = 150 °C
VGE from 7 V to 17 V in steps of 1 V VGE from 7 V to 17 V in steps of 1 V

Figure 3 IGBT Figure 4 FRED

Typical transfer characteristics Typical diode forward current as
IC = f(VGE) a function of forward voltage
IF = f(VF)
125 400,00
IC (A)

IF (A)

100
300,00

75

200,00

50

100,00
25

Tj = 25°C
Tj = Tjmax-25°C Tj = Tjmax-25°C
Tj = 25°C
0 0,00
0,00 2,00 4,00 6,00 8,00 10,00 V GE (V)12,00 0,00 0,50 1,00 1,50 2,00 2,50 V F (V) 3,00

At At
tp = 250 µs tp = 250 µs
VCE = 10 V

Copyright by Vincotech 5 Revision: 5

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Buck

Figure 5 IGBT Figure 6 IGBT

Typical switching energy losses Typical switching energy losses
as a function of collector current as a function of gate resistor
E = f(IC) E = f(RG)
10 10
Eoff High T

E (mWs)
E (mWs)

Eon High T

8 8
Eoff Low T Eon Low T
Eoff High T

6 6
Eoff Low T

4 4

Eon High T

2 2

Eon Low T

0 0
0 50 100 150 200 250 I C (A) 300 0 4 8 12 16 R G ( Ω) 20

With an inductive load at With an inductive load at

Tj = 25/150 °C Tj = 25/150 °C
VCE = 175 V VCE = 175 V
VGE = ±15 V VGE = ±15 V
Rgon = 4 Ω IC = 150 A
Rgoff = 4 Ω

Figure 7 FRED Figure 8 FRED

Typical reverse recovery energy loss Typical reverse recovery energy loss
as a function of collector current as a function of gate resistor
Erec = f(Ic) Erec = f(RG)
5 5
Erec High T
E (mWs)
E (mWs)

4 4

Erec High T
3 3

Erec Low T
2 2

Erec Low T
1 1

0 0
0 50 100 150 200 250 I C (A) 300 0 4 8 12 16 R G ( Ω) 20

With an inductive load at With an inductive load at

Tj = 25/150 °C Tj = 25/150 °C
VCE = 175 V VCE = 175 V
VGE = ±15 V VGE = ±15 V
Rgon = 4 Ω IC = 150 A

Copyright by Vincotech 6 Revision: 5

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Buck

Figure 9 IGBT Figure 10 IGBT

Typical switching times as a Typical switching times as a
function of collector current function of gate resistor
t = f(IC) t = f(RG)
1,00 tf 1,00
tdon
tdoff
t (ms)

t (ms)
tdon
tdoff
tr
0,10 0,10 tf
tr

0,01 0,01

0,00 0,00
0 50 100 150 200 250 I C (A) 300 0 4 8 12 16 R G ( Ω) 20

With an inductive load at With an inductive load at

Tj = 150 °C Tj = 150 °C
VCE = 175 V VCE = 175 V
VGE = ±15 V VGE = ±15 V
Rgon = 4 Ω IC = 150 A
Rgoff = 4 Ω

Figure 11 FRED Figure 12 FRED

Typical reverse recovery time as a Typical reverse recovery time as a
function of collector current function of IGBT turn on gate resistor
trr = f(Ic) trr = f(Rgon)
0,20 0,4
t rr(ms)
t rr(ms)

trr High T trr High T

0,15 0,3

trr Low T

0,10 0,2

trr Low T

0,05 0,1

0,0
0,00
I C (A) 0 4 8 12 16 R gon ( Ω) 20
0 50 100 150 200 250 300

At At
Tj = 25/150 °C Tj = 25/150 °C
VCE = 175 V VR = 175 V
VGE = ±15 V IF = 150 A
Rgon = 4 Ω VGE = ±15 V

Copyright by Vincotech 7 Revision: 5

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Buck

Figure 13 FRED Figure 14 FRED

Typical reverse recovery charge as a Typical reverse recovery charge as a
function of collector current function of IGBT turn on gate resistor
Qrr = f(IC) Qrr = f(Rgon)

20 20
Qrr High T

Qrr (mC)
Qrr (mC)

Qrr High T
15 15

Qrr Low T

10 10

Qrr Low T

5 5

0 0
0 50 100 150 200 250 300
I C (A) 0 4 8 12 16 R gon ( Ω) 20
At
At At
Tj = 25/150 °C Tj = 25/150 °C
VCE = 175 V VR = 175 V
VGE = ±15 V IF = 150 A
Rgon = 4 Ω VGE = ±15 V

Figure 15 FRED Figure 16 FRED

Typical reverse recovery current as a Typical reverse recovery current as a
function of collector current function of IGBT turn on gate resistor
IRRM = f(IC) IRRM = f(Rgon)
250,00 200,00
IrrM (A)
IrrM (A)

IRRM High T
200,00
150,00

IRRM High T
150,00
IRRM Low T
100,00
IRRM Low T
100,00

50,00
50,00

0,00
0,00
0 50 100 150 200 250 300
I C (A) 0 4 8 12 16 R gon ( Ω) 20

At At
Tj = 25/150 °C Tj = 25/150 °C
VCE = 175 V VR = 175 V
VGE = ±15 V IF = 150 A
Rgon = 4 Ω VGE = ±15 V

Copyright by Vincotech 8 Revision: 5

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Buck

Figure 17 FRED Figure 18 FRED

Typical rate of fall of forward Typical rate of fall of forward
and reverse recovery current as a and reverse recovery current as a
function of collector current function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Ic) dI0/dt,dIrec/dt = f(Rgon)
9000,00 12000,00
dIo/dt T dI0/dt T
direc / dt (A/ms)

direc / dt (A/ms)
dIrec/dt T dIrec/dt T

7500,00 10000,00

6000,00 8000,00

4500,00 6000,00

3000,00 4000,00

1500,00 2000,00

0,00 0,00
0 50 100 150 200 250 I C (A) 300 0 4 8 12 16 R gon ( Ω) 20

At At
Tj = 25/150 °C Tj = 25/150 °C
VCE = 175 V VR = 175 V
VGE = ±15 V IF = 150 A
Rgon = 4 Ω VGE = ±15 V

Figure 19 IGBT Figure 20 FRED

IGBT transient thermal impedance FRED transient thermal impedance
as a function of pulse width as a function of pulse width
ZthJH = f(tp) ZthJH = f(tp)
100
ZthJH (K/W)

ZthJH (K/W)

-1
10

D = 0,5 D = 0,5
0,2 0,2
0,1 0,1
0,05 0,05
0,02 0,02
0,01 0,01
0,005 0,005
0.000 0.000
-2
10
t p (s) t p (s)
10-5 10-4 10-3 10-2 10-1 100 1021
10-5
10 -4210
-3
-2
-1

At At
D= tp / T D= tp / T
RthJH = 0,574 K/W RthJH = 1,288 K/W

IGBT thermal model values FRED thermal model values

R (C/W) Tau (s) R (C/W) Tau (s)

0,05 4,5E+00 0,07 4,9E+00
0,10 1,0E+00 0,20 1,0E+00
0,26 2,0E-01 0,60 2,3E-01
0,10 6,1E-02 0,28 8,0E-02
0,05 1,3E-02 0,12 1,6E-02
0,01 1,8E-03 0,03 1,8E-03

Copyright by Vincotech 9 Revision: 5

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Figure 21 IGBT Figure 22 IGBT

Power dissipation as a Collector current as a
function of heatsink temperature function of heatsink temperature
Ptot = f(Th) IC = f(Th)
350 175

IC (A)
Ptot (W)

300 150

250 125

200 100

150 75

100 50

50 25

0 0
0,00 50,00 100,00 150,00 T h ( o C) 200,00 0,00 50,00 100,00 150,00 T h ( o C) 200,00

At At
Tj = 175 °C Tj = 175 °C
VGE = 15 V

Figure 23 FRED Figure 24 FRED

Power dissipation as a Forward current as a
function of heatsink temperature function of heatsink temperature
Ptot = f(Th) IF = f(Th)
160 100
IF (A)
Ptot (W)

80
120

60

80

40

40
20

0 0
0,00 50,00 100,00 150,00 T h ( o C) 200,00 0,00 50,00 100,00 150,00 T h ( o C) 200,00

At At
Tj = 175 °C Tj = 175 °C

Copyright by Vincotech 10 Revision: 5

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Figure 25 IGBT Figure 26 IGBT

Safe operating area as a function Gate voltage vs Gate charge
of collector-emitter voltage
IC = f(VCE) VGE = f(Qg)
103 16

VGE (V)
IC (A)

14
2
100uS
10

12

100mS 1mS 120V

10
1 10mS
10
480V
8

DC
0
10 6

-1
10
2

0
0 3
0 200 400 600 800 1000
10
101 10
2 V CE (V) 10 Q g (nC)

At At
D= single pulse IC = 150 A
Th = 80 ºC
VGE = ±15 V
Tj = Tjmax ºC

Copyright by Vincotech 11 Revision: 5

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Boost

Figure 1 IGBT Figure 2 IGBT

Typical output characteristics Typical output characteristics
IC = f(VCE) IC = f(VCE)
400 400
IC (A)

IC (A)
300 300

200 200

100 100

0 0
0 1 2 3 4 V CE (V) 5 0 1 2 3 4 V CE (V) 5

At At
tp = 250 µs tp = 250 µs
Tj = 25 °C Tj = 150 °C
VGE from 7 V to 17 V in steps of 1 V VGE from 7 V to 17 V in steps of 1 V

Figure 3 IGBT Figure 4 FRED

Typical transfer characteristics Typical diode forward current as
IC = f(VGE) a function of forward voltage
IF = f(VF)
125,00 400
IC (A)

IF (A)

100,00
300

75,00

200

50,00

100
25,00

Tj = Tjmax-25°C
Tj = Tjmax-25°C Tj = 25°C
Tj = 25°C
0,00 0
0,00 2,00 4,00 6,00 8,00 10,00 0,0 0,5 1,0 1,5 2,0 2,5 3,0
V GE (V)12,00 V F (V)

At At
tp = 250 µs tp = 250 µs
VCE = 10 V

Copyright by Vincotech 12 Revision: 5

 10-F106NIA150SA-M136F

Boost

Figure 5 IGBT Figure 6 IGBT

Typical switching energy losses Typical switching energy losses
as a function of collector current as a function of gate resistor
E = f(IC) E = f(RG)
10,00 10,00
Eon High T

E (mWs)
Eoff High T
E (mWs)

Eon Low T
8,00 8,00
Eoff Low T
Eoff High T

6,00 6,00
Eoff Low T

4,00 4,00
Eon High T

Eon Low T
2,00 2,00

0,00 0,00
0 50 100 150 200 250 I C (A) 300 0 4 8 12 16 R G( Ω ) 20

With an inductive load at With an inductive load at

Tj = 25/150 °C Tj = 25/150 °C
VCE = 350 V VCE = 350 V
VGE = ±15 V VGE = ±15 V
Rgon = 4 Ω IC = 149 A
Rgoff = 4 Ω

Figure 7 IGBT Figure 8 IGBT

Typical reverse recovery energy loss Typical reverse recovery energy loss
as a function of collector current as a function of gate resistor
Erec = f(Ic) Erec = f(RG)
5,00 5,00
E (mWs)
E (mWs)

Erec High T

4,00 4,00

3,00 3,00
Erec Low T Erec High T

2,00 2,00

Erec Low T
1,00
1,00

0,00
0,00
0 50 100 150 200 250 I C (A) 300
0 4 8 12 16 RG (Ω ) 20

With an inductive load at With an inductive load at

Tj = 25/150 °C Tj = 25/150 °C
VCE = 350 V VCE = 350 V
VGE = ±15 V VGE = ±15 V
Rgon = 4 Ω IC = 149 A

Copyright by Vincotech 13 Revision: 5

 10-F106NIA150SA-M136F

Boost

Figure 9 IGBT Figure 10 IGBT

Typical switching times as a Typical switching times as a
function of collector current function of gate resistor
t = f(IC) t = f(RG)
1,00 1,00
t ( µs)

t ( µs)
tdoff
tdon
tdoff
tdon
0,10 tf 0,10 tr
tr tf

0,01 0,01

0,00 0,00
0 50 100 150 200 250 I C (A) 300 0 4 8 12 16 R G( Ω ) 20

With an inductive load at With an inductive load at

Tj = 150 °C Tj = 150 °C
VCE = 350 V VCE = 350 V
VGE = ±15 V VGE = ±15 V
Rgon = 4 Ω IC = 149 A
Rgoff = 4 Ω

Figure 11 FRED Figure 12 FRED

Typical reverse recovery time as a Typical reverse recovery time as a
function of collector current function of IGBT turn on gate resistor
trr = f(Ic) trr = f(Rgon)
0,20 0,4
t rr(ms)
t rr(ms)

trr High T
trr High T
0,15 0,3

trr Low T

0,10 0,2

trr Low T

0,05 0,1

0,0
0,00
I C (A) 0 4 8 12 16 R gon ( Ω) 20
0 50 100 150 200 250 300

At At
Tj = 25/150 °C Tj = 25/150 °C
VCE = 350 V VR = 350 V
VGE = ±15 V IF = 149 A
Rgon = 4 Ω VGE = ±15 V

Copyright by Vincotech 14 Revision: 5

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Figure 13 FRED Figure 14 FRED

Typical reverse recovery charge as a Typical reverse recovery charge as a
function of collector current function of IGBT turn on gate resistor
Qrr = f(IC) Qrr = f(Rgon)

20 20,00
Qrr High T
Qrr (mC)

Qrr (mC)
16 16,00

Qrr High T

12 12,00
Qrr Low T

8 8,00

Qrr Low T

4 4,00

0 0,00
0 50 100 150 200 250 I C (A) 300 0 4 8 12 16 R gon ( Ω) 20
At
At At
Tj = 25/150 °C Tj = 25/150 °C
VCE = 350 V VR = 350 V
VGE = ±15 V IF = 149 A
Rgon = 4 Ω VGE = ±15 V

Figure 15 FRED Figure 16 FRED

Typical reverse recovery current as a Typical reverse recovery current as a
function of collector current function of IGBT turn on gate resistor
IRRM = f(IC) IRRM = f(Rgon)
200,00 IRRM High T 200,00
IrrM (A)

IrrM (A)

150,00 150,00
IRRM Low T

IRRM High T
100,00 100,00

IRRM Low T

50,00 50,00

0,00 0,00
0 50 100 150 200 250 I C (A) 300 0 4 8 12 16 R gon ( Ω) 20

At At
Tj = 25/150 °C Tj = 25/150 °C
VCE = 350 V VR = 350 V
VGE = ±15 V IF = 149 A
Rgon = 4 Ω VGE = ±15 V

Copyright by Vincotech 15 Revision: 5

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Figure 17 FRED Figure 18 FRED

Typical rate of fall of forward Typical rate of fall of forward
and reverse recovery current as a and reverse recovery current as a
function of collector current function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Ic) dI0/dt,dIrec/dt = f(Rgon)
10000,00 10000,00
dI0/dt T dI0/dt T
direc / dt (A/ms)

direc / dt (A/ms)
dIrec/dt T dIrec/dt T

8000,00 8000,00

6000,00 6000,00

4000,00 4000,00

2000,00 2000,00

0,00 0,00
0 50 100 150 200 250 0 4 8 12 16 20
I C (A) 300 R gon ( Ω)

At At
Tj = 25/150 °C Tj = 25/150 °C
VCE = 350 V VR = 350 V
VGE = ±15 V IF = 149 A
Rgon = 4 Ω VGE = ±15 V

Figure 19 IGBT Figure 20 FRED

IGBT transient thermal impedance FRED transient thermal impedance
as a function of pulse width as a function of pulse width
ZthJH = f(tp) ZthJH = f(tp)
100
ZthJH (K/W)

ZthJH (K/W)

-1
10

D = 0,5 D = 0,5
0,2 0,2
0,1 0,1
0,05 0,05
0,02 0,02
0,01 10-2 0,01
0,005 10-5 10-4 10-3 10-2 10-1 100
0,005 1021
0.000 0.000

t p (s) t p (s)
100-2
-1
10-5 10-4 10-3 10-2 10-1 100 1021

At At
D= tp / T D= tp / T
RthJH = 0,630 K/W RthJH = 0,701 K/W

IGBT thermal model values FRED thermal model values

R (C/W) Tau (s) R (C/W) Tau (s)

0,06 4,3E+00 0,07 3,3E+00
0,10 1,1E+00 0,17 4,3E-01
0,31 2,2E-01 0,34 9,8E-02
0,10 6,2E-02 0,10 1,4E-02
0,05 1,2E-02 0,03 1,2E-03
0,02 1,3E-03

Copyright by Vincotech 16 Revision: 5

 10-F106NIA150SA-M136F

Boost

Figure 21 IGBT Figure 22 IGBT

Power dissipation as a Collector current as a
function of heatsink temperature function of heatsink temperature
Ptot = f(Th) IC = f(Th)
300 175
Ptot (W)

IC (A)
150
250

125
200

100

150

75

100
50

50
25

0 0
0,00 50,00 100,00 150,00 T h ( o C) 200,00 0,00 50,00 100,00 150,00 T h ( o C) 200,00

At At
Tj = 175 ºC Tj = 175 ºC
VGE = 15 V

Figure 23 FRED Figure 24 FRED

Power dissipation as a Forward current as a
function of heatsink temperature function of heatsink temperature
Ptot = f(Th) IF = f(Th)
280 150
IF (A)
Ptot (W)

240
125

200
100

160

75

120

50
80

25
40

0 0
0,00 50,00 100,00 150,00 Th ( o C) 200,00 0,00 50,00 100,00 150,00 Th ( o C) 200,00

At At
Tj = 175 ºC Tj = 175 ºC

Copyright by Vincotech 17 Revision: 5

 10-F106NIA150SA-M136F

Boost

Figure 25 Boost Inverse Diode Figure 26 Boost Inverse Diode

Typical diode forward current as Diode transient thermal impedance
a function of forward voltage as a function of pulse width
IF = f(VF) ZthJH = f(tp)
400,00 100
IF (A)

ZthJC (K/W)
300,00

200,00 -1
10

D = 0,5
0,2
0,1
100,00 0,05
0,02
0,01
Tj = Tjmax-25°C 0,005
Tj = 25°C 0.000
0,00
0,00 0,50 1,00 1,50 2,00 2,50 3,00 10-2
V F (V) -5 -4 -3 -2 -1 0 t p (s) 21
10 10 10 10 10 10 10

At At
tp = 250 µs D= tp / T
RthJH = 0,771 K/W

Figure 27 Boost Inverse Diode Figure 28 Boost Inverse Diode

Power dissipation as a Forward current as a
function of heatsink temperature function of heatsink temperature
Ptot = f(Th) IF = f(Th)
250 150
IF (A)
Ptot (W)

125
200

100

150

75

100

50

50
25

0 0
0,00 50,00 100,00 150,00 Th ( o C) 200,00 0,00 50,00 100,00 150,00 Th ( o C) 200,00

At At
Tj = 175 ºC Tj = 175 ºC

Copyright by Vincotech 18 Revision: 5

 10-F106NIA150SA-M136F

Thermistor

Figure 1 Thermistor Figure 2 Thermistor

Typical NTC characteristic Typical NTC resistance values
as a function of temperature
RT = f(T)   
 B25/100⋅ 1 − 1  
[Ω]
 T T25  
25000
NTC-typical temperature characteristic
R(T ) = R25 ⋅ e  
R/Ω

20000

15000

10000

5000

0
25 50 75 100 125
T (°C)

Copyright by Vincotech 19 Revision: 5

 10-F106NIA150SA-M136F

Switching Definitions BUCK IGBT

General conditions
Tj = 150 °C
Rgon = 4Ω
Rgoff = 4Ω

Figure 1 10-F106NIA150SA-M136F Output inverter IGBT Figure 2 Output inverter IGBT

Turn-off Switching Waveforms & definition of tdoff, tEoff Turn-on Switching Waveforms & definition of tdon, tEon
(tEoff = integrating time for Eoff) (tEon = integrating time for Eon)
125 250
% tdoff %
VCE IC
100 200
VGE 90%
VCE 90%

75 150
IC
VCE
50 100
tEoff VGE
tdon
25 50

VGE VCE 3%
VGE 10% IC10%
0 0
IC 1% tEon

-25 -50
-0,2 0 0,2 0,4 0,6 2,8 3 3,2 3,4 3,6
time (us) time(us)

VGE (0%) = -15 V VGE (0%) = -15 V

VGE (100%) = 15 V VGE (100%) = 15 V
VC (100%) = 350 V VC (100%) = 350 V
IC (100%) = 150 A IC (100%) = 150 A
tdoff = 0,25 µs tdon = 0,16 µs
tEoff = 0,63 µs tEon = 0,36 µs

Figure 3 Output inverter IGBT Figure 4 Output inverter IGBT

Turn-off Switching Waveforms & definition of tf Turn-on Switching Waveforms & definition of tr
125 250
fitted
% %
VCE IC
IC
100 200
IC 90%

75 150

IC 60% VCE
50 100
IC 90%
IC 40%
tr
25 50

IC10%
IC10%
0 0
tf

-25 -50
0,1 0,15 0,2 0,25 0,3 0,35 0,4 3 3,1 3,2 3,3 3,4
time (us) time(us)

VC (100%) = 350 V VC (100%) = 350 V

IC (100%) = 150 A IC (100%) = 150 A
tf = 0,11 µs tr = 0,03 µs

Copyright by Vincotech 20 Revision: 5

 10-F106NIA150SA-M136F

Switching Definitions BUCK IGBT

Figure 5 Output inverter IGBT Figure 6 Output inverter IGBT

Turn-off Switching Waveforms & definition of tEoff Turn-on Switching Waveforms & definition of tEon
125 125
% IC 1% %

Eoff
100 100

Poff Eon

75 75

50 50
Pon

25 25

VGE 90% VGE 10% VCE 3%

0 0
tEoff tEon

-25 -25
-0,2 0 0,2 0,4 0,6 2,9 3 3,1 3,2 3,3 3,4
time (us) time(us)

Poff (100%) = 52,44 kW Pon (100%) = 52,44 kW

Eoff (100%) = 5,92 mJ Eon (100%) = 1,75 mJ
tEoff = 0,63 µs tEon = 0,36 µs

Figure 7 Output inverter FRED Figure 8 Output inverter IGBT

Gate voltage vs Gate charge (measured) Turn-off Switching Waveforms & definition of trr
20 150
VGE (V)

%
15 Id
100

10
trr
50
5

Vd fitted
0 0
IRRM 10%

-5
-50

-10

-100 IRRM 90%

-15
IRRM 100%

-20 -150
-200 0 200 400 600 800 1000 1200 1400 1600 1800 3,1 3,2 3,3 3,4 3,5
Qg (nC) time(us)

VGEoff = -15 V Vd (100%) = 350 V

VGEon = 15 V Id (100%) = 150 A
VC (100%) = 350 V IRRM (100%) = -178 A
IC (100%) = 150 A trr = 0,15 µs
Qg = 1585,43 nC

Copyright by Vincotech 21 Revision: 5

 10-F106NIA150SA-M136F

Switching Definitions BUCK IGBT

Figure 9 Output inverter FRED Figure 10 Output inverter FRED

Turn-on Switching Waveforms & definition of tQrr Turn-on Switching Waveforms & definition of tErec
(tQrr = integrating time for Qrr) (tErec= integrating time for Erec)
150 125

% %
Id Qrr Erec
100 100

Prec
tQrr
50 75 tErec

0 50

-50 25

-100 0

-150 -25
3,1 3,2 3,3 3,4 3,5 3,6 3 3,1 3,2 3,3 3,4 3,5 3,6
time(us) time(us)

Id (100%) = 150 A Prec (100%) = 52,44 kW

Qrr (100%) = 13,73 µC Erec (100%) = 3,63 mJ
tQrr = 0,30 µs tErec = 0,30 µs

150
300
402 80
40
100
30
12
50
3000
60
25
40
150
1,4
1,25 1

Measurement circuit

Figure 11
BUCK stage switching measurement circuit

Copyright by Vincotech 22 Revision: 5

 10-F106NIA150SA-M136F

Switching Definitions BOOST IGBT

General conditions
Tj = 150 °C
Rgon = 4Ω
Rgoff = 4Ω

Figure 1 10-F106NIA150SA-M136F Output inverter IGBT Figure 2 Output inverter IGBT

Turn-off Switching Waveforms & definition of tdoff, tEoff Turn-on Switching Waveforms & definition of tdon, tEon
(tEoff = integrating time for Eoff) (tEon = integrating time for Eon)
140 250
IC
120 tdoff
200
VCE
100
VGE 90% VCE 90%
150
80

% % VCE
60 IC 100

tEoff tdon VGE

40
50
IC 1%
20 VGE10% VCE3%
IC10%
0
0 VGE

tEon
-20 -50
-0,2 -0,1 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 2,8 2,9 3 3,1 3,2 3,3 3,4 3,5 3,6
time (us) time(us)

VGE (0%) = -15 V VGE (0%) = -15 V

VGE (100%) = 15 V VGE (100%) = 15 V
VC (100%) = 350 V VC (100%) = 350 V
IC (100%) = 150 A IC (100%) = 150 A
tdoff = 0,25 µs tdon = 0,16 µs
tEoff = 0,49 µs tEon = 0,34 µs

Figure 3 Output inverter IGBT Figure 4 Output inverter IGBT

Turn-off Switching Waveforms & definition of tf Turn-on Switching Waveforms & definition of tr
125
250
IC
Ic
100
VCE 200
IC 90%

75
150
IC 60%
%
50 %
100
IC 40% IC90%

tr
25
50

IC10%
IC10% VCE
0 0

fitted
tf
-25 -50
0,1 0,15 0,2 0,25 0,3 0,35 0,4 3,05 3,1 3,15 3,2 3,25 3,3 3,35 3,4
time (us) time(us)

VC (100%) = 350 V VC (100%) = 350 V

IC (100%) = 150 A IC (100%) = 150 A
tf = 0,10 µs tr = 0,03 µs

Copyright by Vincotech 23 Revision: 5

 10-F106NIA150SA-M136F

Switching Definitions BOOST IGBT

Figure 5 Output inverter IGBT Figure 6 Output inverter IGBT

Turn-off Switching Waveforms & definition of tEoff Turn-on Switching Waveforms & definition of tEon
120 120
% Eoff % Eon
Poff
100 100

80 80

60 60

Pon
40 40

20 20
VGE10% VCE3%

0 0
VGE90% tEoff
IC 1% tEon
-20 -20
-0,2 -0,1 0 0,1 0,2(us) 0,3 0,4 0,5 0,6 2,9 3 3,1 3,2 3,3 3,4 3,5
time time(us)

Poff (100%) = 52,38 kW Pon (100%) = 52,38 kW

Eoff (100%) = 5,94 mJ Eon (100%) = 1,68 mJ
tEoff = 0,49 µs tEon = 0,34 µs

Figure 7 Output inverter FRED Figure 8 Output inverter IGBT

Gate voltage vs Gate charge (measured) Turn-off Switching Waveforms & definition of trr
20 150

Id
15
100

10
trr
fitted
50
5

Vd
VGE (V)

0 % 0
IRRM10%
-5
-50

-10
IRRM90%
-100
-15 IRRM100%

-20 -150
-200 0 200 400 600 800 1000 1200 1400 1600 1800 3,1 3,15 3,2 3,25 3,3 3,35 3,4 3,45
Qg (nC) time(us)
VGEoff = -15 V Vd (100%) = 350 V
VGEon = 15 V Id (100%) = 150 A
VC (100%) = 350 V IRRM (100%) = -166 A
IC (100%) = 150 A trr = 0,15 µs
Qg = 1583,47 nC

Copyright by Vincotech 24 Revision: 5

 10-F106NIA150SA-M136F

Switching Definitions BOOST IGBT

Figure 9 Output inverter FRED Figure 10 Output inverter FRED

Turn-on Switching Waveforms & definition of tQrr Turn-on Switching Waveforms & definition of tErec
(tQrr = integrating time for Qrr) (tErec= integrating time for Erec)
150 120

Erec
Id Qrr 100
100

tQrr 80
50

60 tEre
%0 %
40

-50
20
Prec
-100
0

-150 -20
3 3,1 3,2 3,3 3,4 3,5 3,6 3,7 3,05 3,15 3,25 3,35 3,45 3,55 3,65
time(us) time(us)
Id (100%) = 150 A Prec (100%) = 52,38 kW
Qrr (100%) = 14,35 µC Erec (100%) = 4,14 mJ
tQrr = 0,31 µs tErec = 0,31 µs

150
75
300
100
402 1 80
40
100
30
12
50
3000
60
25
40
150
1,4
1,25 1

Measurement circuit

Figure 11
BOOST stage switching measurement circuit

Copyright by Vincotech 25 Revision: 5

 10-F106NIA150SA-M136F

Ordering Code and Marking - Outline - Pinout

Ordering Code & Marking

Version Ordering Code in DataMatrix as in packaging barcode as
without thermal paste 12mm housing 10-F106NIA150SA-M136F M136F M136F

Outline

Pinout

Copyright by Vincotech 26 Revision: 5

 10-F106NIA150SA-M136F

DISCLAIMER

The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.

LIFE SUPPORT POLICY

Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.

As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.

Copyright by Vincotech 27 Revision: 5