EE3329: Fundamentals of Semiconductor Devices, UT – El Paso (2021 fall)

Exercise 5.2: MOSFET I-V Characteristics

Team Name: Points Summary:
Roles
Solution Programming, Observations, Report Other
Member Name
Procedure Results Conclusions Writing Roles

Evaluation Rubric
0-1 Errors 2-3 Errors 4-5 Errors ≥6 Errors
Overall Format 3 pts 2 pts 1 pt 0 pts
Overall Grammar 3 pts 2 pts 1 pt 0 pts
Results: Part (a) 6 pts 4 pts 2 pts 0 pts
Results: Part (b) 6 pts 4 pts 2 pts 0 pts
Results: Part (c) 6 pts 4 pts 2 pts 0 pts
Results: Part (d) 6 pts 4 pts 2 pts 0 pts
Supported by Supported by
Observations and Not supported
results, results with
Conclusions by results
consistently inconsistencies
Part (a) 4 pts 2 pts 0 pts
Part (b) 4 pts 2 pts 0 pts
Part (c) 4 pts 2 pts 0 pts
Part (d) 4 pts 2 pts 0 pts

Feedback Comments
1) Problem Statements
A MOSFET has the following parameters:
 Semiconductor parameters:
o Material: Silicon
o Electron Affinity: χ Si =4.05( eV )
o Bandgap: E g=1.12(eV )
o Substrate Doping: N A =4 ×1016 (cm−3 )
o Channel Length: L=1 ×10−4 (cm)
o Channel Width: Z=5 ×10−4 (cm)
o Relative Permittivity: ε rsi=11.9
 Gate dielectric parameters:
o Material: SiO2
o Thickness: d=35× 10−7 (cm)
o Relative Permittivity: ε rox =3.9
o Charges:
 Qf =q ∙ 25 ×1010 (Coul /cm 2)
 Q m =Q ot=Q ¿ =0 (Coul/ cm 2 )
 Gate electrode parameters:
o Material: Aluminum
o Work function: ϕ Al =4.08(eV )
 T =300( K )

a) Use a computer to determine and plot the family of I D vs V D characteristic curves

similar to the graph below parameterized by the following gate voltages.
 V G =1 ,2 , 3(V )

Figure 1. MOSFET I-V Characteristics.

2) Solution Procedure, Results, Observations, and Conclusions

Exercise Part (a):