Wolkite University

College of Engineering
Department of Electrical and Computer Engineering: Communication Eng.g Stream
Microelectronic Device and circuits, ECEG 4261
Assignment

ECEG-4261 Microelectronic Devices and Circuits (MDC)

Type: Group work

Output: Presentation (10%) and Report (15%)

Objective: The objective of this assignment is to demonstrate your understanding and

knowledge of the course and to help you further investigate the world of microelectronic devices
and its applications.

Task: Microelectronics Devices and Circuits have many applications in our daily lives, from our
cell phones, communication systems, laptops and tablets to power converters in large power
substations. Your team’s task in this project is to understand, write a report and present a well
organized work on microelectronic devices and their applications listed below.

Report format: The paper should at least include:

 Abstract
 Introduction
 Description and operation of the device or operational characteristics
 Application of the device in modern electronic systems
 Discussion
 Conclusion and Future work
 References
 Each member contribution

You have all the freedom on how to arrange and deliver your paper provided all the
information above is included. However, remember that the paper must be neatly and
systematically arranged. Limit your pages to a maximum of 6 pages.

Microelectronic Devices:

1. Thyristor: Silicon-controlled Rectifier (SCR), DIAC, TRIAC

2. Laser Diode
3. Optoisolator (Optocoupler)
4. Light Emitting Diode (LED)
5. Infrared Sensors
6. Photodiodes
7. Phototransistors
8. Tunnel Diode
9. IMPATT Diode
 Wolkite University
College of Engineering
Department of Electrical and Computer Engineering: Communication Eng.g Stream
Microelectronic Device and circuits, ECEG 4261

Wolkite University
College of Engineering
Department of Electrical and Computer Engineering: Communication Eng.g Stream
Test One (40min) – 20 points

Answer the following questions accordingly. Show your own effort! Copying from other
students is strictly forbidden!
1. The number of transistors per chip has been growing exponentially each year since the
invention of transistor. How this phenomenon was stated by Moore’s Law? (2 point)
2. Low cost of fabrication and possible to place both digital and analog circuits in the same chip
are some of the advantages of CMOS devices. TRUE/FALSE? (1 point)
3. Extrinsic semiconductor is a semiconductor material doped with donor or acceptor type
impurities. TRUE/FALSE? (1 point)
4. Mention at least two elemental and two compound type semiconductor materials. ( 2 points)
5. Explain the electron-hole pair generation and electron-hole recombination phenomena. (2
points)
6. What are the four excitation mechanisms to manipulate concentration of electrons and holes?
(2 points)
7. Compute the intrinsic concentration of electrons in silicon at T = 300 K and T = 400 K.
Use the constants: k = 1.38x10-23J/k, Eg = 1.12eV = 1.792x10-19J (4 points)
8. Consider a Si sample at T = 300 K, doped with Phosphorous at a concentration of 2 × 1016
cm-3. ( 6 points)
a. Is this material n-type or p-type?
b. What are the majority and minority carrier concentrations?
c. Suppose this sample is additionally doped with Boron at a concentration of 1016 cm-3.
Compute the new carrier concentrations and identify the material type.
 Wolkite University
College of Engineering
Department of Electrical and Computer Engineering: Communication Eng.g Stream
Microelectronic Device and circuits, ECEG 4261
Test Two (1hr) – 20 points

Answer the following questions accordingly. Show your own effort! Copying from other
students is strictly forbidden!
1. Explain the nature and concepts of reverse biased pn junction with its V-I characteristics. (2
points)
2. State and discuss the five modeling approaches for forward biased diode. (3 points)
3. Find the current through the 1KΩ resistor for the following two cases: (6 points)
a. When the diode voltage is VD = 0.8v.
b. When the current through 200Ω resistor is I = 20mA
+5V

I 200 

1 k
V

4. Consider the rectifier circuit shown below and the sinusoidal input voltage waveform.
Calculate the output voltage and sketch the waveform. (5points)

5. For the network shown in the figure below (4 points)

A. Calculate 5τ
B. Compare 5τ to half the period of the applied signal
C. Sketch Vo
 Wolkite University
College of Engineering and Technology
Department of Electrical and Computer Engineering

Microelectronic Devices and Circuits

Course Code: ECEG4261
FINAL EXAMINATION

Time Allotted: 2:00 Hrs

Date: Jan. 2018

General Instructions

i. Write your Name & ID. No. on the space provided below.
ii. Follow each specific instructions and show clear steps for all your
answers.
iii. Do your own work; Cheating cases are treated according to the WKU
Rules & Regulations.
iv. Make sure that the question paper has 3 parts.

Student Information:

Name: _______________________________________________

ID. No.: ______/______/______

For Office Use:

Part I. _____________ Part II.____________ Part III. _____________

Final Exam (40%):_________________

Remark: ___________________________________________________________________________________________

_____________________________________________________________________________________________________
 Part I. Give a brief discussion on the following problems (20 pts)

1. Compare and contrast the doping concentration of the Base, Emitter and Collector regions of a bipolar
junction transistor and explain why the width of base region is so important.
Answer:

2. Describe the modes of operation of an NPN and a PNP Bipolar Junction Transistor briefly and draw a
carefully dimensioned I-V characteristic diagram.
Answer:

3. Compare and contrast properties of a BJT with a MOSFET.

Answer:

4. Mention and provide a brief description of at least three optoelectronic devices.

Answer:
5. The two important phenomena in semiconductor based optoelectronics that can describe the energy
band concept are photon absorption and emission. Describe photon absorption and emission in
semiconductor and give application examples for both.
Answer:

6. State at least four of the recent trends in optoelectronic study and focus areas.
Answer:

Part II. Computational type problems. You may use the back of the question paper whenever
you want labeling the question number (15 pts)

1. Formulate the expression for the total voltage gain of a Common Source amplifier diode connected load
shown in the figure below (Fig.1). State any assumptions that you might take.

Figure 1.

Answer:
2. Consider the following MOSFET circuit (Fig.2) which is biased at a drain current of 1mA. If μnCox =
100μA/V2, aspect ratio (W/L) is 20 and channel-length modulation produces λ = 0.2V-1.
a) Calculate small-signal parameters gm and ro.
b) Compute the intrinsic gain if channel-length modulation λ = 0.1V-1
c) Compute the voltage gain if the load RD = 1kΩ and λ = 0.1V-1.

Figure 2.

Answer:

Part III. Problem from your assignment (5 pts)

1. Based on your group’s work/assignment on different topics under microelectronic devices and
circuits, respond to the following questions.
a. Title of your work
b. What were the main points you raised and elaborated in the report/presentation?
c. What was your conclusions and what you have learnt?