IPB042N10N3 G IPI045N10N3 G

IPP045N10N3 G

™3
"%&$!"# Power-Transistor
Product Summary
Features
V 9H )(( J
Q ' 3 81>>5< >? B=1<<5F5<
R  , ? >=1H-(  ,&* Y"
Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & 
I9 )(( 6
Q. 5BI <? G ? > B5C9CD
1>3 5 R 9H"[Z#

Q   T ? @5B1D9>7 D5=@5B1D
EB5

Q ) 2 6B55 <514 @<1D9

>7 + ? " , 3 ? =@<9
1>D
)#
Q * E1<96954 13 3 ? B49>7 D? $     6? BD1B75D1@@<9
3 1D9? >

Q#451<6? B8978 6B5AE5>3 I CG9D389

>7 1>4 CI>3 8B? >? EC B53 D
96931D
9? >

Q" 1<? 75> 6B55 13 3 ? B49

>7 D? #       

Type #)     '  '  ! #) #   '  '  ! #) )    '  '  !

Package E=%ID*.+%+ E=%ID*.*%+ E=%ID**(%+

Marking (,*C)(C (,-C)(C (,-C)(C

Maximum ratings, 1DT V   T  E><5CC ? D85BG9C5 C@53 9

6954

Parameter Symbol Conditions Value Unit

*#
 ? >D
9>E? EC 4B
19> 3 EBB5>D I9 T 8   T )(( 6

T 8   T )((

) E<C54 4B19> 3 EBB5>D*# I 9$\aX_Q T 8   T ,((

 F1<1>3 85 5>5B7I C9
>7<5 @E<C5 E 6H I 9     R =H   " +,( Y@

!1D5 C? EB35 F? <D175 V =H q*( J

) ? G5B49CC9@1D9? > P `[` T 8   T *), K

( @5B1D9>7 1>4 CD? B

175 D5=@5B1DEB5 T V T _`S  

  T

#  3 <9=1D
93 3 1D57? BI  #' #          
)#
$ , -   1>4 $  ,   
*#
, 55 697EB
5

+ 5F

 @175     
 IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G

Parameter Symbol Conditions Values Unit

min. typ. max.

Thermal characteristics

-85B=1<B5C9
CD1>3 5 :E>3 D9
? > 3 1C5 R `T@8 % % (&/ A'K

-85B=1<B5C9
CD1>3 5 R `T@6 =9>9
=1<6? ? D@B9>D 

:E>3 D
9? > 1=2 9
5>D  3 = * 3 ? ? <9
>7 1B51+# % % -(

Electrical characteristics, 1DT V   T  E><5CC ? D85BG9C5 C@53 96954

Static characteristics

 B19> C? EB35 2 B51;4? G> F? <D175 V "7G#9HH V =H  .  I 9 = )(( % % J

!1D5 D8B5C8? <4 F? <D175 V =H"`T# V 9H4V =H I 9   V  * *&/ +&-

V 9H   .  V =H  . 
05B? 71D5 F? <D175 4B
19> 3 EBB5>D I 9HH % (&) ) r6
T V   T

V 9H   .  V =H  . 
% )( )((
T V   T

!1D5 C? EB35 <51;175 3 EBB5>D I =HH V =H   .  V 9H  . % ) )(( Z6

V =H  .  I 9    
 B19> C? EB35 ? > CD1D5 B5C9CD1>3 5 R 9H"[Z# % +&1 ,&- Y"
-(     -(   

V =H  .  I 9    
% +&. ,&*
ID*.+

V =H  .  I 9     -(
% ,&/ /&/
    -(   

V =H  .  I 9    
% ,&, /&,
ID*.+

!1D5 B5C9CD
1>3 5 R= % )&, % "

gV 9Hg5*gI 9gR 9H"[Z#YMd

I^MZ_O[ZPaO`MZOQ g R_ /+ ),- % H
I 9   

+#
 5F935 ? >   == H   == H
 == 5@? HI )   +  G9D8  3 =* ? >5 <1I5B
 V=D
893; 3 ? @@5B1B
51 6? B4B
19>
3 ? >>53 D
9? >
)   9C F5B
D931<9> CD
9<<19B

+ 5F

 @175      
 IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic characteristics

#>@ED3 1@13 9D1>3 5 C U__ % .+*( 0,)( \<

V =H  .  V 9H   . 
( ED@ED3 1@13 9
D1>3 5 C [__ % )*)( ).)(
f & " J
+ 5F5BC5 DB1>C65B3 1@13 9D1>3 5 C ^__ % ,) %

-EB> ? > 45<1I D9=5 t P"[Z# % */ % Z_

+ 9C5 D9
=5 t^ V 99   .  V =H  .  % -1 %

-EB> ? 6645<1I D9=5 t P"[RR# I 9     R =

 " % ,0 %

1<<D9
=5 tR % ), %

!1D5  81BS5  81B13 D5B9

CD93C,#

!1D5 D? C? EB35 3 81B75 Q S_ % +( +1 Z8

!1D5 D? 4B19> 3 81B75 Q SP % ). %

V 99   .  I 9    
, G9D389
>7 3 81B75 Q _c % */ %
V =H  D?  .
!1D5 3 81B75 D? D
1< QS % 00 ))/

!1D5 @<1D51E F? <D

175 V \XM`QMa % ,&/ % J

( ED@ED3 81B75 Q [__ V 99   .  V =H  . % )** ).* Z8

Reverse Diode

 9? 45 3 ? >D9>? EC 6? BG1B4 3 EBB

5>D IH % % )(( 6
T 8   T
 9? 45 @E<C5 3 EBB
5>D I H$\aX_Q % % ,((

V =H  .  I <    
 9? 45 6? BG1B4 F? <D175 V H9 % )&( )&* J
T V   T

+ 5F5BC5 B53 ? F5BI D9

=5 t ^^ V G   .  I <4I H % .0 % Z_

Q ^^ Pi <'Pt     V C
+ 5F5BC5 B53 ? F5BI 3 81B
75 % )+- % Z8

,#
, 55 697EB
5  6? B71D5 3 81B
75 @1B1=5D5B4569>9D
9? >

+ 5F

 @175      
 IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
1 Power dissipation 2 Drain current
P `[`4R"T 8# I 94R"T 8 V =H"  .

250 120

100
200

80

150
P tot [W]

I D [A]
60

100
40

50
20

0 0
0 50 100 150 200 0 50 100 150 200
T C [°C] T C [°C]

3 Safe operating area 4 Max. transient thermal impedance

I 94R"V 9H T 8   T  D 4( Z `T@84R"t \#
@1B1=5D5B t \ @1B1=5D5B
 D 4t \'T

103 100
<9=9D
54 2 I ? > CD
1D5
^Q_U_`MZOQ VC

 VC
(&-
2  VC
10

=C
(&*
Z thJC [K/W]
I D [A]

1 -1 (&)
10 10
 =C

(&(-
98
(&(*
0
10
(&()

C9>7<5 @E<C5

10-1 10-2
-1 0 1 2 3
10 10 10 10 10
V DS [V] t p [s]

+ 5F

 @175      
 IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
5 Typ. output characteristics 6 Typ. drain-source on resistance
I 94R"V 9H T V   T R 9H"[Z#4R"I 9 T V   T
@1B
1=5D5B V =H @1B1=5D5B
 V =H

400 9
 .


 .
 . 
 .
320

 .
6

R DS(on) [m ]
240

 .  .
I D [A]


 .

 .
160
 . 3

80

 .

0 0
0 1 2 3 4 5 0 50 100 150
V DS [V] I D [A]

7 Typ. transfer characteristics 8 Typ. forward transconductance

I 94R"V =H K
V 9Hg5*gI 9gR 9H"[Z#YMd g R_4R"I 9 T V   T
@1B
1=5D5B T V

200 200

160
150

120
g fs [S]
I D [A]

100

80

  T
50
40
  T

0 0
0 2 4 6 8 0 50 100 150
V GS [V] I D [A]

+ 5F

 @175      
 IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R 9H"[Z#4R"T V I 9     V =H  . V =H"`T#4R"T V V =H4V 9H
@1B1=5D5B
 I9

10 4

3.5

8
3
 V 

2.5
R DS(on) [m ]

6
 V 

V GS(th) [V]
 

2
`e\

4
1.5

1
2

0.5

0 0
-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180
T j [°C] T j [°C]

11 Typ. capacitances 12 Forward characteristics of reverse diode

C 4R"V 9H V =H  .  f  & " J I <4R"V H9#
@1B1=5D5B
 TV

104 103
8U__

8[__
  T   T    

3 2   T
10 10

  T    
C [pF]

I F [A]

102 101
8^__

101 100
0 20 40 60 80 0 0.5 1 1.5 2
V DS [V] V SD [V]

+ 5F

 @175      
 IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
13 Avalanche characteristics 14 Typ. gate charge

I 6H4R"t 6J R =H   " V =H4R"Q SM`Q I 9    @E<C54

@1B
1=5D5B T V"_`M^`# @1B1=5D5B
 V 99

1000 10

 .

100
  T  .
6
 .

V GS [V]
I AS [A]

  T

  T

4
10

1 0
1 10 100 1000 0 20 40 60 80 100
t AV [µs] Q gate [nC]

15 Drain-source breakdown voltage 16 Gate charge waveforms

V 7G"9HH#4R"T V I 9 =

110
V =H

Qg

105
V BR(DSS) [V]

100

V S _"`T#

95

Q S "`T# Q _c Q g ate

Q S_ Q SP
90
-60 -20 20 60 100 140 180
T j [°C]

+ 5F

 @175      
 IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G

PG-TO220-3: Outline

+ 5F

 @175      
 IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G

PG-TO262-3

+ 5F

 @175      
 IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G

PG-TO-263 (D²-Pak)

+ 5F

 @175      
 IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G

Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.

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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
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of any third party.

Information
For further information on technology, delivery terms and conditions and prices, please
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Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.

+ 5F

 @175