FQP2N60C/FQPF2N60C 2.

0A, 600V N-Channel MOSFET

April 2006

QFET ®

FQP2N60C/FQPF2N60C
2.0A, 600V N-Channel MOSFET

General Description Features

These N-Channel enhancement mode power field effect • rDS(on) = 4.7Ω @ VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge (typical 8.5 nC)
planar stripe, DMOS technology. • Low Crss (typical 4.3 pF)
This advanced technology has been especially tailored to • Fast switching
minimize on-state resistance, provide superior switching • 100% avalanche tested
performance, and withstand high energy pulse in the • Improved dv/dt capability
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.

G
TO-220 GD S
TO-220F
G DS
FQP Series FQPF Series S

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol Parameter FQP2N60C FQPF2N60C Units

VDSS Drain-Source Voltage 600 V
ID Drain Current - Continuous (TC = 25°C) 2.0 2.0 * A
- Continuous (TC = 100°C) 1.35 1.35 * A
IDM Drain Current - Pulsed (Note 1) 8 8* A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 120 mJ
IAR Avalanche Current (Note 1) 2.0 A
EAR Repetitive Avalanche Energy (Note 1) 5.4 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C) 54 23 W
- Derate above 25°C 0.43 0.18 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL 300 °C
1/8∀ from case for 5 seconds
* Drain current limited by maximum junction temperature.

Thermal Characteristics
Symbol Parameter FQP2N60C FQPF2N60C Units
RθJC Thermal Resistance, Junction-to-Case 2.32 5.5 °C/W
RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

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FQP2N60C/FQPF2N60C, Rev. A1
 FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET
Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 600 -- -- V
ΔBVDSS Breakdown Voltage Temperature
ID = 250 μA, Referenced to 25°C -- 0.6 -- V/°C
/ ΔTJ Coefficient
IDSS VDS = 600 V, VGS = 0 V -- -- 1 μA
Zero Gate Voltage Drain Current
VDS = 480 V, TC = 125°C -- -- 10 μA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 2.0 -- 4.0 V
rDS(on) Static Drain-Source
VGS = 10 V, ID = 1 A -- 3.6 4.7 Ω
On-Resistance
gFS Forward Transconductance VDS = 40 V, ID = 1 A (Note 4) -- 5.0 -- S

Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 180 235 pF
Coss Output Capacitance f = 1.0 MHz -- 20 25 pF
Crss Reverse Transfer Capacitance -- 4.3 5.6 pF

Switching Characteristics
td(on) Turn-On Delay Time -- 9 28 ns
VDD = 300 V, ID = 2 A,
tr Turn-On Rise Time -- 25 60 ns
RG = 25 Ω
td(off) Turn-Off Delay Time -- 24 58 ns
(Note 4, 5)
tf Turn-Off Fall Time -- 28 66 ns
Qg Total Gate Charge VDS = 480 V, ID = 2 A, -- 8.5 12 nC
Qgs Gate-Source Charge VGS = 10 V -- 1.3 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 4.1 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 2 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 8 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 2 A, -- 230 -- ns
Qrr Reverse Recovery Charge dIF / dt = 100 A/μs (Note 4) -- 1.0 -- μC

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 56mH, IAS = 2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature

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FQP2N60C/FQPF2N60C, Rev. A1
 FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET
Typical Characteristics

1
10
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
0
10 6.0 V
ID, Drain Current [A]

ID, Drain Current [A]

5.5 V o
150 C
5.0 V
Bottom : 4.5 V o
0 -55 C
10
o
25 C
-1
10

Notes : Notes :
1. 250us Pulse Test 1. VDS = 40V
o
2. TC = 25 C 2. 250us Pulse Test
-2 -1
10 10
-1 0 1
10 10 10 2 4 6 8 10

VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

12

10
Drain-Source On-Resistance

IDR, Reverse Drain Current [A]

VGS = 10V
8
rDS(ON) [Ohm],

0
10
6

4
o
VGS = 20V 150 C
Notes :
2 o 1. VGS = 0V
o
25 C
Note : TJ = 25 C 2. 250us Pulse Test
-1
0 10
0 1 2 3 4 5 0.2 0.4 0.6 0.8 1.0 1.2 1.4

ID, Drain Current [A] VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation with Source Current
and Temperature

500 12
Ciss = Cgs + Cgd (Cds = shorted)
450 Coss = Cds + Cgd
Crss = Cgd 10 VDS = 120V
400
VGS, Gate-Source Voltage [V]

VDS = 300V
350 Ciss 8
Capacitances [pF]

VDS = 480V
300
Coss
250 6

200
Note ;
4
150 1. VGS = 0 V
2. f = 1 MHz
100
Crss 2
50
Note : ID = 2A

0 0
-1 0 1
10 10 10 0 2 4 6 8 10

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

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FQP2N60C/FQPF2N60C, Rev. A1
 FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET
Typical Characteristics (Continued)

1.2 3.0
Drain-Source Breakdown Voltage

2.5

Drain-Source On-Resistance
1.1
BVDSS, (Normalized)

rDS(ON), (Normalized)
2.0

1.0 1.5

1.0
0.9 Notes :
1. VGS = 0 V
? Notes :
2. ID = 250 uA 0.5 1. VGS = 10 V
2. ID = 1 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs Temperature vs Temperature

Operation in This Area Operation in This Area

is Limited by R DS(on) is Limited by R DS(on)
1 1
10 10

100 μs 100 μs

1 ms
ID, Drain Current [A]

ID, Drain Current [A]

1 ms
0
10 ms 0
10 ms
10 100 ms 10
100 ms
DC
DC

-1 -1
10 10
Notes : Notes :
o o
1. TC = 25 C 1. TC = 25 C
o o
2. TJ = 150 C 2. TJ = 150 C
3. Single Pulse 3. Single Pulse
-2 -2
10 10
0 1 2 3 0 1 2 3
10 10 10 10 10 10 10 10

VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V]

Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area
for FQP2N60C for FQPF2N60C

2.4

2.0
ID, Drain Current [A]

1.6

1.2

0.8

0.4

0.0
25 50 75 100 125 150
o
TC, Case Temperature [ C]

Figure 10. Maximum Drain Current

vs Case Temperature

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FQP2N60C/FQPF2N60C, Rev. A1
 FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET
Typical Characteristics (Continued)

0 D = 0 .5
(t), Thermal Response 10
N o te s :
o
1 . Z θJC ( t) = 2 .3 2 C /W M a x .
0 .2 2 . D u ty F a c to r , D = t 1 / t 2
3 . T JM - T C = P D M * Z θJC ( t)
0 .1
PDM
0 .0 5
-1
10
0 .0 2
t1
t2
0 .0 1
θJC

s in g le p u ls e
Z

-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

Figure 11-1. Transient Thermal Response Curve for FQP2N60C

D = 0 .5
(t), Thermal Response

10
0 0 .2 N o te s :
o
1 . Z θJC ( t) = 5 .5 C /W M a x .
0 .1 2 . D u t y F a c t o r , D = t 1 /t 2
3 . T JM - T C = P D M * Z θJC ( t)
0 .0 5
PDM
0 .0 2
-1
10
0 .0 1 t1
t2
θJC
Z

s in g le p u ls e

-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

Figure 11-2. Transient Thermal Response Curve for FQPF2N60C

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FQP2N60C/FQPF2N60C, Rev. A1
 FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

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FQP2N60C/FQPF2N60C, Rev. A1
 FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms

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FQP2N60C/FQPF2N60C, Rev. A1
 FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET
Package Dimensions

TO-220
9.90 ±0.20 4.50 ±0.20

(8.70)
1.30 ±0.10

2.80 ±0.10
(1.70)

+0.10
ø3.60 ±0.10 1.30 –0.05

18.95MAX.
(3.70)

15.90 ±0.20
9.20 ±0.20

(1.46)

(3.00)
(45°
)
(1.00)
13.08 ±0.20

10.08 ±0.30

1.27 ±0.10 1.52 ±0.10

0.80 ±0.10 +0.10

0.50 –0.05 2.40 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]

10.00 ±0.20

Dimensions in Millimeters

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FQP2N60C/FQPF2N60C, Rev. A1
 FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET
Package Dimensions (Continued)

TO-220F
10.16 ±0.20 ø3.18 ±0.10 2.54 ±0.20
3.30 ±0.10

(7.00) (0.70)

6.68 ±0.20

15.87 ±0.20
15.80 ±0.20

(1.00x45°)

MAX1.47
9.75 ±0.30

0.80 ±0.10
(3
0°
)

#1
0.35 ±0.10 +0.10
0.50 –0.05 2.76 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]
4.70 ±0.20

9.40 ±0.20

Dimensions in Millimeters

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FQP2N60C/FQPF2N60C, Rev. A1
 FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET
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CORPORATION.
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result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I19

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FQP2N60C/FQPF2N60C, Rev. A1