PDF - bt-151

BT151-800R
SCR
22 February 2018 Product data sheet
1. General description
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 plastic package intended for use
in applications requiring high bidirectional blocking voltage capability, high surge current capability
and high thermal cycling performance.
2. Features and benefits

• High bidirectional blocking voltage capability
• High surge current capability
• High thermal cycling performance
3. Applications
• Ignition circuits
• Motor control
• Protection circuits
• Voltage regulation
4. Quick reference data

Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDRM repetitive peak off- - - 800 V
state voltage
VRRM repetitive peak reverse - - 800 V
voltage
ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; - - 120 A
state current tp = 10 ms; Fig. 4; Fig. 5
half sine wave; Tj(init) = 25 °C; - - 132 A
tp = 8.3 ms
Tj junction temperature - - 125 °C
IT(AV) average on-state half sine wave; Tmb ≤ 109 °C; Fig. 1 - - 7.5 A
current
IT(RMS) RMS on-state current half sine wave; Tmb ≤ 109 °C; Fig. 2; - - 12 A
Fig. 3
Static characteristics
IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7 - 2 15 mA
Dynamic characteristics
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WeEn Semiconductors BT151-800R
SCR

dVD/dt rate of rise of off-state VDM = 536 V; Tj = 125 °C; RGK = 100 Ω; 200 1000 - V/µs
voltage (VDM = 67% of VDRM); exponential
waveform; Fig. 12
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 K cathode mb A K
2 A anode G
sym037
3 G gate
mb A mounting base; connected to
anode
1 2 3
TO-220AB (SOT78)
6. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BT151-800R TO-220AB plastic single-ended package; heatsink mounted; 1 mounting SOT78
hole; 3-lead TO-220AB
BT151-800R All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet 22 February 2018 2 / 12

SCR
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state - 800 V
voltage
VRRM repetitive peak reverse - 800 V
voltage
IT(AV) average on-state current half sine wave; Tmb ≤ 109 °C; Fig. 1 - 7.5 A
IT(RMS) RMS on-state current half sine wave; Tmb ≤ 109 °C; Fig. 2; - 12 A
Fig. 3
ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; tp = 10 ms; - 120 A
state current Fig. 4; Fig. 5
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms - 132 A
2 2
I t I t for fusing tp = 10 ms; SIN - 72 A²s
dIT/dt rate of rise of on-state IG = 30 mA - 50 A/µs
current
IGM peak gate current - 2 A
VRGM peak reverse gate - 5 V
voltage
PGM peak gate power - 5 W
PG(AV) average gate power over any 20 ms period - 0.5 W
Tstg storage temperature -40 150 °C
Tj junction temperature - 125 °C
003aab830 105.5
15
Tmb(max)
Ptot (°C)
a = 1.57 108.8
(W)
1.9
2.2
10 112.0
2.8
4
115.3
conduction form
angle factor
(degrees) a 118.5
5
30 4
60 2.8
αα 121.8
90 2.2
120 1.9
180 1.57
0 125
0 2 4 6 8
IT(AV) (A)
Fig. 1. Total power dissipation as a function of average on-state current; maximum values

SCR
001aaa999 001aaa954
16 25
IT(RMS)
IT(RMS)
(A)
(A)
20
12
15
10
4
5
0 0
- 50 0 50 100 150 10- 2 10- 1 1 10
Tmb (°C) surge duration (s)
Fig. 2. RMS on-state current as a function of mounting

base temperature; maximum values Fig. 3. RMS on-state current as a function of surge
duration; maximum values
001aaa956
103
ITSM dlT/dt limit

(A)
102
IT ITSM
tp t
Tj initial = 25 °C max
10
10- 5 10- 4 10- 3 10- 2
tp (s)
Fig. 4. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values

SCR
003aab829
160
ITSM
(A)
120
80
IT ITSM
40
tp t
Tj initial = 25 °C max
0
1 10 102 103
number of cycles
Fig. 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values

SCR
8. Thermal characteristics
Table 5. Thermal characteristics
Rth(j-mb) thermal resistance Fig. 6 - - 1.3 K/W
from junction to
mounting base
Rth(j-a) thermal resistance in free air - 60 - K/W
from junction to
ambient free air
001aaa962
10
Zth(j-mb)
(K/W)
10-1
10-2
10-3
10-5 10-4 10-3 10-2 10-1 1 10
tp (s)
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width

SCR
9. Characteristics
Table 6. Characteristics
Static characteristics
IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7 - 2 15 mA
IL latching current VD = 12 V; IG = 0.1 A; Tj = 25 °C; Fig. 8 - 10 40 mA
IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - 7 20 mA
VT on-state voltage IT = 23 A; Tj = 25 °C; Fig. 10 - 1.4 1.75 V
VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C; - 0.6 1.5 V
Fig. 11
VD = 800 V; IT = 0.1 A; Tj = 125 °C; 0.25 0.4 - V
Fig. 11
ID off-state current VD = 800 V; Tj = 125 °C - 0.1 0.5 mA
IR reverse current VR = 800 V; Tj = 125 °C - 0.1 0.5 mA
Dynamic characteristics
dVD/dt rate of rise of off-state VDM = 536 V; Tj = 125 °C; RGK = 100 Ω; 200 1000 - V/µs
voltage (VDM = 67% of VDRM); exponential
waveform; Fig. 12
VDM = 536 V; Tj = 125 °C; (VDM = 67% 50 130 - V/µs
of VDRM); exponential waveform; gate
open circuit; Fig. 12
tgt gate-controlled turn-on ITM = 40 A; VD = 800 V; IG = 0.1 A; dIG/ - 2 - µs
time dt = 5 A/µs; Tj = 25 °C
tq commutated turn-off VDM = 536 V; Tj = 125 °C; ITM = 20 A; - 70 - µs
time VR = 25 V; (dIT/dt)M = 30 A/µs; dVD/
dt = 50 V/µs; RGK(ext) = 100 Ω; (VDM =
67% of VDRM)
001aaa952 001aaa951
3 3
IGT IL
IGT(25°C) IL(25°C)
2 2
1 1
0 0
- 50 0 50 100 150 - 50 0 50 100 150
Tj (°C) Tj (°C)
Fig. 7. Normalized gate trigger current as a function of Fig. 8. Normalized latching current as a function of
junction temperature junction temperature

SCR
001aaa950 001aaa959
3 30
IH
IT
IH(25°C)
(A)
2 20
(1) (2) (3)
1 10
0 0
- 50 0 50 100 150 0 0.5 1 1.5 2
Tj (°C) VT (V)
Vo = 1.06 V; Rs = 0.0304 Ω
Fig. 9. Normalized holding current as a function of
(1) Tj = 125 °C; typical values
junction temperature
(2) Tj = 125 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 10. On-state current as a function of on-state
voltage
001aaa953 001aaa949
1.6 104
VGT dVD/dt
VGT(25°C) (V/µs)
(1)
1.2 103
(2)
0.8 102
0.4 10
- 50 0 50 100 150 0 50 100 150
Tj (°C) Tj (°C)
(1) RGK = 100 Ω;

Fig. 11. Normalized gate trigger voltage as a function of
(2) gate open circuit
junction temperature
Fig. 12. Critical rate of rise of off-state voltage as a
function of junction temperature; minimum values

SCR
10. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78
E A
p A1
q mounting
D1 base
L1(1) L2(1)
Q
b1(2)
L (3×)
b2(2)
(2×)
1 2 3
b(3×) c
e e
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
L2(1)
UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) p q Q
max.
4.7 1.40 0.9 1.6 1.3 0.7 16.0 6.6 10.3 15.0 3.30 3.8 3.0 2.6
mm 2.54 3.0
4.1 1.25 0.6 1.0 1.0 0.4 15.2 5.9 9.7 12.8 2.79 3.5 2.7 2.2
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC JEITA PROJECTION
08-04-23
SOT78 3-lead TO-220AB SC-46
08-06-13
Fig. 13. Package outline TO-220AB (SOT78)

SCR
Right to make changes — WeEn Semiconductors reserves the right to

make changes to information published in this document, including without
11. Legal information limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Data sheet status Suitability for use — WeEn Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical
or safety-critical systems or equipment, nor in applications where failure
Document Product Definition or malfunction of an WeEn Semiconductors product can reasonably
status [1][2] status [3] be expected to result in personal injury, death or severe property or
environmental damage. WeEn Semiconductors and its suppliers accept no
Objective Development This document contains data from
liability for inclusion and/or use of WeEn Semiconductors products in such
[short] data the objective specification for product
equipment or applications and therefore such inclusion and/or use is at the
sheet development.
customer’s own risk.
Preliminary Qualification This document contains data from the Quick reference data — The Quick reference data is an extract of the
[short] data preliminary specification. product data given in the Limiting values and Characteristics sections of this
sheet document, and as such is not complete, exhaustive or legally binding.
Product Production This document contains the product Applications — Applications that are described herein for any of these
[short] data specification. products are for illustrative purposes only. WeEn Semiconductors makes
sheet no representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
[1] Please consult the most recently issued document before initiating or Customers are responsible for the design and operation of their applications
completing a design. and products using WeEn Semiconductors products, and WeEn
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[3] The product status of device(s) described in this document may have customer product design. It is customer’s sole responsibility to determine
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associated with their applications and products.
Definitions
WeEn Semiconductors does not accept any liability related to any default,
Draft — The document is a draft version only. The content is still under damage, costs or problem which is based on any weakness or default
internal review and subject to formal approval, which may result in in the customer’s applications or products, or the application or use by
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information included herein and shall have no liability for the consequences Semiconductors products in order to avoid a default of the applications
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Short data sheet — A short data sheet is an extract from a full data sheet customer(s). WeEn does not accept any liability in this respect.
with the same product type number(s) and title. A short data sheet is Limiting values — Stress above one or more limiting values (as defined in
intended for quick reference only and should not be relied upon to contain the Absolute Maximum Ratings System of IEC 60134) will cause permanent
detailed and full information. For detailed and full information see the damage to the device. Limiting values are stress ratings only and (proper)
relevant full data sheet, which is available on request via the local WeEn operation of the device at these or any other conditions above those
Semiconductors sales office. In case of any inconsistency or conflict with the given in the Recommended operating conditions section (if present) or the
short data sheet, the full data sheet shall prevail. Characteristics sections of this document is not warranted. Constant or
Product specification — The information and data provided in a Product repeated exposure to limiting values will permanently and irreversibly affect
data sheet shall define the specification of the product as agreed between the quality and reliability of the device.
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Product data sheet.
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may be subject to export control regulations. Export might require a prior
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no responsibility for the content in this document if provided by an information automotive qualified products in automotive equipment or applications.
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In no event shall WeEn Semiconductors be liable for any indirect, incidental, automotive applications to automotive specifications and standards,
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any liability, damages or failed product claims resulting from customer
Notwithstanding any damages that customer might incur for any reason design and use of the product for automotive applications beyond WeEn
whatsoever, WeEn Semiconductors’ aggregate and cumulative liability Semiconductors’ standard warranty and WeEn Semiconductors’ product
towards customer for the products described herein shall be limited in specifications.
accordance with the Terms and conditions of commercial sale of WeEn
Semiconductors.

SCR
Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.

SCR
12. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Limiting values............................................................. 3
8. Thermal characteristics............................................... 6
9. Characteristics..............................................................7
10. Package outline.......................................................... 9
11. Legal information..................................................... 10
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved

For more information, please visit: http://www.ween-semi.com
For sales office addresses, please send an email to: salesaddresses@ween-semi.com
Date of release: 22 February 2018

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BT151-800R

2. Features and benefits

4. Quick reference data

Downloaded from Arrow.com.

Symbol Parameter Conditions Min Typ Max Unit

Product data sheet 22 February 2018 2 / 12

Downloaded from Arrow.com.

Product data sheet 22 February 2018 3 / 12

Downloaded from Arrow.com.

Fig. 2. RMS on-state current as a function of mounting

ITSM dlT/dt limit

Product data sheet 22 February 2018 4 / 12

Downloaded from Arrow.com.

Product data sheet 22 February 2018 5 / 12

Downloaded from Arrow.com.

Product data sheet 22 February 2018 6 / 12

Downloaded from Arrow.com.

Product data sheet 22 February 2018 7 / 12

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(1) (2) (3)

(1) RGK = 100 Ω;

Product data sheet 22 February 2018 8 / 12

Downloaded from Arrow.com.

10. Package outline

OUTLINE REFERENCES EUROPEAN

Fig. 13. Package outline TO-220AB (SOT78)

Product data sheet 22 February 2018 9 / 12

Downloaded from Arrow.com.

Right to make changes — WeEn Semiconductors reserves the right to

Product data sheet 22 February 2018 10 / 12

Downloaded from Arrow.com.

Translations — A non-English (translated) version of a document is for

Product data sheet 22 February 2018 11 / 12

Downloaded from Arrow.com.

© WeEn Semiconductors Co., Ltd. 2018. All rights reserved

Product data sheet 22 February 2018 12 / 12

Downloaded from Arrow.com.

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